技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF200R12KE4P 62mmC-Series模块采用第四代沟槽栅/场终止IGBT4和HE型发射极控制二极管 62mmC-SeriesmodulewithTrench/FieldstopIGBT4andEmitterControlledHEdiode 初步数据/PreliminaryData VCES = 1200V IC nom = 200A / ICRM = 400A 典型应用 • 大功率变流器 • 电机传动 • UPS系统 • 风力发电机 TypicalApplications • Highpowerconverters • Motordrives • UPSsystems • Windturbines 电气特性 • 低开关损耗 • 无与伦比的坚固性 • VCEsat带正温度系数 ElectricalFeatures • Lowswitchinglosses • Unbeatablerobustness • VCEsatwithpositivetemperaturecoefficient 机械特性 • 封装的CTI>400 • 高爬电距离和电气间隙 • 高功率密度 • 绝缘的基板 • 标准封装 • 预涂导热介质 MechanicalFeatures • PackagewithCTI>400 • Highcreepageandclearancedistances • Highpowerdensity • Isolatedbaseplate • Standardhousing • Pre-appliedThermalInterfaceMaterial ModuleLabelCode BarcodeCode128 DMX-Code preparedby:AKB dateofpublication:2016-04-04 approvedby:MK revision:V2.0 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF200R12KE4P 初步数据 PreliminaryData IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 1200 V 连续集电极直流电流 ContinuousDCcollectorcurrent TH = 85°C, Tvj max = 175°C IC nom 200 A 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 400 A VGES +/-20 V 栅极－发射极峰值电压 Gate-emitterpeakvoltage 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 200 A, VGE = 15 V IC = 200 A, VGE = 15 V IC = 200 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat typ. max. 1,75 2,00 2,05 2,15 V V V 5,80 6,40 V 栅极阈值电压 Gatethresholdvoltage IC = 7,60 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VGE = -15 V ... +15 V QG 1,80 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 3,8 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 14,0 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,50 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA VGEth 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 200 A, VCE = 600 V VGE = ±15 V RGon = 2,7 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 200 A, VCE = 600 V VGE = ±15 V RGon = 2,7 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 200 A, VCE = 600 V VGE = ±15 V RGoff = 2,7 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 200 A, VCE = 600 V VGE = ±15 V RGoff = 2,7 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 200 A, VCE = 600 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, di/dt = 4000 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 2,7 Ω Tvj = 150°C 关断损耗能量(每脉冲） Turn-offenergylossperpulse 5,20 0,20 0,25 0,27 µs µs µs 0,045 0,05 0,055 µs µs µs 0,50 0,60 0,62 µs µs µs 0,10 0,16 0,18 µs µs µs Eon 10,0 15,0 17,0 mJ mJ mJ IC = 200 A, VCE = 600 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, du/dt = 4000 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 2,7 Ω Tvj = 150°C Eoff 17,0 26,0 29,0 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt ISC 800 A ??? Thermalresistance,junctiontoheatsink 每个IGBT/perIGBT validwithIFXpre-appliedthermalinterfacematerial 在开关状态下温度 Temperatureunderswitchingconditions tP ≤ 10 µs, Tvj = 150°C td on tr td off tf RthJH Tvj op preparedby:AKB dateofpublication:2016-04-04 approvedby:MK revision:V2.0 2 0,162 K/W -40 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF200R12KE4P 初步数据 PreliminaryData 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C VRRM 1200 V IF 200 A IFRM 400 A I²t 7800 7400 特征值/CharacteristicValues min. A²s A²s typ. max. 2,15 VF 1,65 1,65 1,65 IF = 200 A, - diF/dt = 4000 A/µs (Tvj=150°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V Tvj = 150°C IRM 230 250 260 A A A 恢复电荷 Recoveredcharge IF = 200 A, - diF/dt = 4000 A/µs (Tvj=150°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V Tvj = 150°C Qr 20,0 32,0 45,0 µC µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 200 A, - diF/dt = 4000 A/µs (Tvj=150°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V Tvj = 150°C Erec 9,00 16,0 17,5 mJ mJ mJ ??? Thermalresistance,junctiontoheatsink 每个二极管/perdiode validwithIFXpre-appliedthermalinterfacematerial RthJH 正向电压 Forwardvoltage IF = 200 A, VGE = 0 V IF = 200 A, VGE = 0 V IF = 200 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 反向恢复峰值电流 Peakreverserecoverycurrent 在开关状态下温度 Temperatureunderswitchingconditions Tvj op preparedby:AKB dateofpublication:2016-04-04 approvedby:MK revision:V2.0 3 V V V 0,203 K/W -40 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF200R12KE4P 初步数据 PreliminaryData 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 4,0 kV Cu 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) Al2O3 爬电距离 Creepagedistance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 29,0 23,0 mm 电气间隙 Clearance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 23,0 11,0 mm > 400 相对电痕指数 Comperativetrackingindex CTI min. 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个模块/permodule λPaste=1W/(m·K)/λgrease=1W/(m·K) 杂散电感,模块 Strayinductancemodule 模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip TH=25°C,每个开关/perswitch 储存温度 Storagetemperature 0,01 K/W LsCE 20 nH RCC'+EE' 0,70 mΩ -40 TBPmax 模块安装的安装扭距 Mountingtorqueformodulmounting 螺丝M6根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote M 3,00 端子联接扭距 Terminalconnectiontorque 螺丝M6根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote M 2,5 重量 Weight G Lagerung und Transport von Modulen mit TIM => AN2012-07 Storage and shipment of modules with TIM => AN2012-07 preparedby:AKB dateofpublication:2016-04-04 approvedby:MK revision:V2.0 4 max. RthCH Tstg 最高基板工作温度 Maximumbaseplateoperationtemperature typ. 340 125 °C 125 °C 6,00 Nm 5,0 Nm g 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF200R12KE4P 初步数据 PreliminaryData 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150°C 400 400 Tvj = 25°C Tvj = 125°C Tvj = 150°C 320 320 280 280 240 240 200 200 160 160 120 120 80 80 40 40 0 0,0 0,5 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 360 IC [A] IC [A] 360 1,0 1,5 2,0 VCE [V] 2,5 3,0 0 3,5 传输特性IGBT,逆变器(典型) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=2.7Ω,RGoff=2.7Ω,VCE=600V 400 60 Tvj = 25°C Tvj = 125°C Tvj = 150°C 360 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 55 50 320 45 280 40 35 E [mJ] IC [A] 240 200 30 25 160 20 120 15 80 10 40 0 5 5 6 7 8 9 VGE [V] 10 11 12 0 13 preparedby:AKB dateofpublication:2016-04-04 approvedby:MK revision:V2.0 5 0 40 80 120 160 200 240 280 320 360 400 IC [A] 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF200R12KE4P 初步数据 PreliminaryData 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=200A,VCE=600V 瞬态热阻抗IGBT,逆变器 transientthermalimpedanceIGBT,Inverter ZthJH=f(t) 110 1 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 100 90 ZthJH : IGBT 80 0,1 ZthJH [K/W] E [mJ] 70 60 50 40 0,01 30 20 i: 1 2 3 4 ri[K/W]: 0,0098 0,0318 0,096 0,0244 τi[s]: 0,000335 0,0157 0,0746 0,632 10 0 0 3 6 9 12 15 RG [Ω] 18 21 24 0,001 0,001 27 反偏安全工作区IGBT,逆变器（RBSOA） reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=±15V,RGoff=2.7Ω,Tvj=150°C 0,01 0,1 t [s] 1 10 正向偏压特性二极管,逆变器（典型) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 450 400 IC, Modul IC, Chip 400 360 Tvj = 25°C Tvj = 125°C Tvj = 150°C 320 350 280 300 IF [A] IC [A] 240 250 200 200 160 150 120 100 80 50 0 40 0 200 400 600 800 VCE [V] 1000 1200 0 1400 preparedby:AKB dateofpublication:2016-04-04 approvedby:MK revision:V2.0 6 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 VF [V] 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF200R12KE4P 初步数据 PreliminaryData 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=2.7Ω,VCE=600V 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=200A,VCE=600V 25 25 Erec, Tvj = 125°C Erec, Tvj = 150°C Erec, Tvj = 125°C Erec, Tvj = 150°C 15 15 E [mJ] 20 E [mJ] 20 10 10 5 5 0 0 50 100 150 200 IF [A] 250 300 350 0 400 瞬态热阻抗二极管,逆变器 transientthermalimpedanceDiode,Inverter ZthJH=f(t) 1 ZthJH : Diode ZthJH [K/W] 0,1 0,01 i: 1 2 3 4 ri[K/W]: 0,017 0,0478 0,1056 0,0326 τi[s]: 0,000288 0,0127 0,065 0,79 0,001 0,001 0,01 0,1 t [s] 1 10 preparedby:AKB dateofpublication:2016-04-04 approvedby:MK revision:V2.0 7 0 3 6 9 12 15 RG [Ω] 18 21 24 27 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF200R12KE4P 初步数据 PreliminaryData 接线图/Circuitdiagram 封装尺寸/Packageoutlines In fin e o n preparedby:AKB dateofpublication:2016-04-04 approvedby:MK revision:V2.0 8 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF200R12KE4P 初步数据 PreliminaryData Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2015. 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