技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF400R12KT3P_E 62mmC-Series模块采用第三代沟槽栅/场终止IGBT和HE型发射机控制二极管 62mmC-SeriesmodulewithTrench/FieldstopIGBT3andEmitterControlledHEdiode 初步数据/PreliminaryData VCES = 1200V IC nom = 400A / ICRM = 800A 典型应用 • 大功率变流器 • 电机传动 • UPS系统 • 风力发电机 TypicalApplications • Highpowerconverters • Motordrives • UPSsystems • Windturbines 电气特性 • 低开关损耗 • 无与伦比的坚固性 • VCEsat带正温度系数 ElectricalFeatures • Lowswitchinglosses • Unbeatablerobustness • VCEsatwithpositivetemperaturecoefficient 机械特性 • 封装的CTI>400 • 高爬电距离和电气间隙 • 高功率密度 • 绝缘的基板 • 标准封装 • 预涂导热介质 MechanicalFeatures • PackagewithCTI>400 • Highcreepageandclearancedistances • Highpowerdensity • Isolatedbaseplate • Standardhousing • Pre-appliedThermalInterfaceMaterial ModuleLabelCode BarcodeCode128 DMX-Code preparedby:AKB dateofpublication:2016-04-25 approvedby:MK revision:V2.0 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF400R12KT3P_E 初步数据 PreliminaryData IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 1200 V 连续集电极直流电流 ContinuousDCcollectorcurrent TH = 65°C, Tvj max = 150°C IC nom 400 A 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 800 A VGES +/-20 V 栅极－发射极峰值电压 Gate-emitterpeakvoltage 特征值/CharacteristicValues min. typ. max. 1,70 1,90 2,15 V V 5,80 6,50 V 集电极－发射极饱和电压 Collector-emittersaturationvoltage IC = 400 A, VGE = 15 V IC = 400 A, VGE = 15 V 栅极阈值电压 Gatethresholdvoltage IC = 16,0 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VGE = -15 V ... +15 V QG 3,70 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 1,9 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 28,0 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 1,10 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA Tvj = 25°C Tvj = 125°C VCE sat VGEth 5,00 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 400 A, VCE = 600 V VGE = ±15 V RGon = 1,8 Ω Tvj = 25°C Tvj = 125°C td on 0,16 0,17 µs µs 上升时间(电感负载) Risetime,inductiveload IC = 400 A, VCE = 600 V VGE = ±15 V RGon = 1,8 Ω Tvj = 25°C Tvj = 125°C tr 0,04 0,045 µs µs 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 400 A, VCE = 600 V VGE = ±15 V RGoff = 1,8 Ω Tvj = 25°C Tvj = 125°C td off 0,45 0,52 µs µs 下降时间(电感负载) Falltime,inductiveload IC = 400 A, VCE = 600 V VGE = ±15 V RGoff = 1,8 Ω Tvj = 25°C Tvj = 125°C tf 0,10 0,16 µs µs 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 400 A, VCE = 600 V, LS = 30 nH VGE = ±15 V, di/dt = 8000 A/µs RGon = 1,8 Ω Tvj = 25°C Tvj = 125°C Eon 18,0 28,0 mJ mJ 关断损耗能量(每脉冲） Turn-offenergylossperpulse IC = 400 A, VCE = 600 V, LS = 30 nH VGE = ±15 V, du/dt = 4500 V/µs RGoff = 1,8 Ω Tvj = 25°C Tvj = 125°C Eoff 30,0 45,0 mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 900 V VCEmax = VCES -LsCE ·di/dt 1600 A ??? Thermalresistance,junctiontoheatsink 每个IGBT/perIGBT validwithIFXpre-appliedthermalinterfacematerial 在开关状态下温度 Temperatureunderswitchingconditions tP ≤ 10 µs, Tvj = 125°C ISC RthJH Tvj op preparedby:AKB dateofpublication:2016-04-25 approvedby:MK revision:V2.0 2 0,0847 K/W -40 125 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF400R12KT3P_E 初步数据 PreliminaryData 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VRRM 1200 V IF 400 A IFRM 800 A I²t 34000 A²s 特征值/CharacteristicValues min. typ. max. 1,65 1,65 2,15 正向电压 Forwardvoltage IF = 400 A, VGE = 0 V IF = 400 A, VGE = 0 V Tvj = 25°C Tvj = 125°C VF 反向恢复峰值电流 Peakreverserecoverycurrent IF = 400 A, - diF/dt = 8000 A/µs (Tvj=125°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V IRM 400 480 A A 恢复电荷 Recoveredcharge IF = 400 A, - diF/dt = 8000 A/µs (Tvj=125°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V Qr 44,0 80,0 µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 400 A, - diF/dt = 8000 A/µs (Tvj=125°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V Erec 20,0 37,0 mJ mJ ??? Thermalresistance,junctiontoheatsink 每个二极管/perdiode validwithIFXpre-appliedthermalinterfacematerial RthJH 在开关状态下温度 Temperatureunderswitchingconditions Tvj op preparedby:AKB dateofpublication:2016-04-25 approvedby:MK revision:V2.0 3 V V 0,151 K/W -40 125 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF400R12KT3P_E 初步数据 PreliminaryData 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV Cu 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) Al2O3 爬电距离 Creepagedistance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 29,0 23,0 mm 电气间隙 Clearance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 23,0 11,0 mm > 400 相对电痕指数 Comperativetrackingindex CTI min. 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个模块/permodule λPaste=1W/(m·K)/λgrease=1W/(m·K) 杂散电感,模块 Strayinductancemodule 模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip TH=25°C,每个开关/perswitch 储存温度 Storagetemperature 0,01 K/W LsCE 20 nH RCC'+EE' 0,70 mΩ -40 TBPmax 模块安装的安装扭距 Mountingtorqueformodulmounting 螺丝M6根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote M 3,00 端子联接扭距 Terminalconnectiontorque 螺丝M6根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote M 2,5 重量 Weight G Lagerung und Transport von Modulen mit TIM => siehe AN2012-07 Storage and shipment of modules with TIM => see AN2012-07 preparedby:AKB dateofpublication:2016-04-25 approvedby:MK revision:V2.0 4 max. RthCH Tstg 最高基板工作温度 Maximumbaseplateoperationtemperature typ. 340 125 °C 125 °C 6,00 Nm 5,0 Nm g 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF400R12KT3P_E 初步数据 PreliminaryData 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=125°C 800 800 Tvj = 25°C Tvj = 125°C 640 640 560 560 480 480 400 400 320 320 240 240 160 160 80 80 0 0,0 0,5 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 720 IC [A] IC [A] 720 1,0 1,5 VCE [V] 2,0 2,5 0 3,0 传输特性IGBT,逆变器(典型) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=1.8Ω,RGoff=1.8Ω,VCE=600V 800 120 Tvj = 25°C Tvj = 125°C 720 Eon, Tvj = 125°C Eoff, Tvj = 125°C 100 640 560 80 E [mJ] IC [A] 480 400 60 320 40 240 160 20 80 0 5 6 7 8 9 VGE [V] 10 11 0 12 preparedby:AKB dateofpublication:2016-04-25 approvedby:MK revision:V2.0 5 0 100 200 300 400 IC [A] 500 600 700 800 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF400R12KT3P_E 初步数据 PreliminaryData 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=400A,VCE=600V 瞬态热阻抗IGBT,逆变器 transientthermalimpedanceIGBT,Inverter ZthJH=f(t) 200 0,1 Eon, Tvj = 125°C Eoff, Tvj = 125°C 180 ZthJH : IGBT 160 140 ZthJH [K/W] E [mJ] 120 100 80 0,01 60 40 i: 1 2 3 4 ri[K/W]: 0,0062 0,0081 0,0525 0,0179 τi[s]: 0,000222 0,00798 0,0684 0,597 20 0 0 2 4 6 8 10 RG [Ω] 12 14 16 0,001 0,001 18 反偏安全工作区IGBT,逆变器（RBSOA） reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=±15V,RGoff=1.8Ω,Tvj=125°C 0,01 0,1 t [s] 1 10 正向偏压特性二极管,逆变器（典型) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 900 800 IC, Modul IC, Chip 800 720 Tvj = 25°C Tvj = 125°C 640 700 560 600 IF [A] IC [A] 480 500 400 400 320 300 240 200 160 100 0 80 0 200 400 600 800 VCE [V] 1000 1200 0 1400 preparedby:AKB dateofpublication:2016-04-25 approvedby:MK revision:V2.0 6 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 VF [V] 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF400R12KT3P_E 初步数据 PreliminaryData 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=1.8Ω,VCE=600V 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=400A,VCE=600V 50 50 Erec, Tvj = 125°C 45 45 40 40 35 35 30 30 E [mJ] E [mJ] Erec, Tvj = 125°C 25 25 20 20 15 15 10 10 5 5 0 0 100 200 300 400 IF [A] 500 600 700 0 800 瞬态热阻抗二极管,逆变器 transientthermalimpedanceDiode,Inverter ZthJH=f(t) 1 ZthJH : Diode ZthJH [K/W] 0,1 0,01 i: 1 2 3 4 ri[K/W]: 0,01 0,0444 0,0671 0,0295 τi[s]: 0,000415 0,0193 0,0934 0,973 0,001 0,001 0,01 0,1 t [s] 1 10 preparedby:AKB dateofpublication:2016-04-25 approvedby:MK revision:V2.0 7 0 2 4 6 8 10 RG [Ω] 12 14 16 18 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF400R12KT3P_E 初步数据 PreliminaryData 接线图/Circuitdiagram 封装尺寸/Packageoutlines In fin e o n preparedby:AKB dateofpublication:2016-04-25 approvedby:MK revision:V2.0 8 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF400R12KT3P_E 初步数据 PreliminaryData Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2015. 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