技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF900R12IE4P PrimePACK™2模块采用第四代沟槽栅/场终止IGBT4和发射极控制二极管 PrimePACK™2modulewithTrench/FieldstopIGBT4andEmitterControlleddiode 初步数据/PreliminaryData VCES = 1200V IC nom = 900A / ICRM = 1800A 典型应用 • 大功率变流器 • 电机传动 • 风力发电机 TypicalApplications • Highpowerconverters • Motordrives • Windturbines 电气特性 • 高短路能力 • 高冲击电流能力 • 高电流密度 • 低开关损耗 • Tvjop=150°C • VCEsat带正温度系数 ElectricalFeatures • Highshort-circuitcapability • Highsurgecurrentcapability • Highcurrentdensity • Lowswitchinglosses • Tvjop=150°C • VCEsatwithpositivetemperaturecoefficient 机械特性 • 4kV交流1分钟绝缘 • 封装的CTI>400 • 高爬电距离和电气间隙 • 集成NTC温度传感器 • 符合RoHS • 预涂导热介质 MechanicalFeatures • 4kVAC1mininsulation • PackagewithCTI>400 • Highcreepageandclearancedistances • IntegratedNTCtemperaturesensor • RoHScompliant • Pre-appliedThermalInterfaceMaterial ModuleLabelCode BarcodeCode128 DMX-Code preparedby:SM dateofpublication:2016-03-31 approvedby:RN revision:V2.0 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF900R12IE4P 初步数据 PreliminaryData IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 1200 V 连续集电极直流电流 ContinuousDCcollectorcurrent TH = 60°C, Tvj max = 175°C IC nom 900 A 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 1800 A VGES +/-20 V 栅极－发射极峰值电压 Gate-emitterpeakvoltage 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 900 A, VGE = 15 V IC = 900 A, VGE = 15 V IC = 900 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat typ. max. 1,75 2,05 2,10 2,10 2,45 2,50 V V V 5,80 6,40 V 栅极阈值电压 Gatethresholdvoltage IC = 33,0 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VGE = -15 V ... +15 V QG 6,40 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 1,2 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 54,0 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 3,00 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA VGEth 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 900 A, VCE = 600 V VGE = ±15 V RGon = 1,5 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 900 A, VCE = 600 V VGE = ±15 V RGon = 1,5 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 900 A, VCE = 600 V VGE = ±15 V RGoff = 1,5 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 900 A, VCE = 600 V VGE = ±15 V RGoff = 1,5 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 900 A, VCE = 600 V, LS = 45 nH Tvj = 25°C VGE = ±15 V, di/dt = 5700 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 1,3 Ω Tvj = 150°C 关断损耗能量(每脉冲） Turn-offenergylossperpulse 5,20 0,20 0,22 0,22 µs µs µs 0,11 0,12 0,13 µs µs µs 0,66 0,75 0,79 µs µs µs 0,09 0,14 0,15 µs µs µs Eon 55,0 70,0 80,0 mJ mJ mJ IC = 900 A, VCE = 600 V, LS = 45 nH Tvj = 25°C VGE = ±15 V, du/dt = 3200 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 1,5 Ω Tvj = 150°C Eoff 85,0 120 130 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 900 V VCEmax = VCES -LsCE ·di/dt ISC 3600 A ??? Thermalresistance,junctiontoheatsink 每个IGBT/perIGBT validwithIFXpre-appliedthermalinterfacematerial 在开关状态下温度 Temperatureunderswitchingconditions tP ≤ 10 µs, Tvj = 150°C td on tr td off tf RthJH Tvj op preparedby:SM dateofpublication:2016-03-31 approvedby:RN revision:V2.0 2 48,1 K/kW -40 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF900R12IE4P 初步数据 PreliminaryData 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C VRRM 1200 V IF 900 A IFRM 1800 A I²t 91,0 88,0 特征值/CharacteristicValues min. kA²s kA²s typ. max. VF 1,90 1,85 1,80 2,40 2,35 2,30 IF = 900 A, - diF/dt = 5700 A/µs (Tvj=150°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V Tvj = 150°C IRM 500 660 710 A A A 恢复电荷 Recoveredcharge IF = 900 A, - diF/dt = 5700 A/µs (Tvj=150°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V Tvj = 150°C Qr 90,0 150 195 µC µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 900 A, - diF/dt = 5700 A/µs (Tvj=150°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V Tvj = 150°C Erec 40,0 80,0 90,0 mJ mJ mJ ??? Thermalresistance,junctiontoheatsink 每个二极管/perdiode validwithIFXpre-appliedthermalinterfacematerial RthJH 正向电压 Forwardvoltage IF = 900 A, VGE = 0 V IF = 900 A, VGE = 0 V IF = 900 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 反向恢复峰值电流 Peakreverserecoverycurrent 在开关状态下温度 Temperatureunderswitchingconditions Tvj op V V V 87,2 K/kW -40 150 °C 负温度系数热敏电阻/NTC-Thermistor 特征值/CharacteristicValues min. typ. max. 额定电阻值 Ratedresistance TNTC = 25°C R100偏差 DeviationofR100 TNTC = 100°C, R100 = 493 Ω 耗散功率 Powerdissipation TNTC = 25°C B-值 B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-值 B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-值 B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K R25 ∆R/R 5,00 -5 P25 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. preparedby:SM dateofpublication:2016-03-31 approvedby:RN revision:V2.0 3 kΩ 5 % 20,0 mW 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF900R12IE4P 初步数据 PreliminaryData 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 4,0 kV Cu 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) Al2O3 爬电距离 Creepagedistance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 33,0 33,0 mm 电气间隙 Clearance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 19,0 19,0 mm > 400 相对电痕指数 Comperativetrackingindex CTI min. 杂散电感,模块 Strayinductancemodule 模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip TH=25°C,每个开关/perswitch 储存温度 Storagetemperature 18 nH RCC'+EE' 0,30 mΩ -40 TBPmax 模块安装的安装扭距 Mountingtorqueformodulmounting 螺丝M5根据相应的应用手册进行安装 ScrewM5-Mountingaccordingtovalidapplicationnote M 端子联接扭距 Terminalconnectiontorque 螺丝M4根据相应的应用手册进行安装 ScrewM4-Mountingaccordingtovalidapplicationnote 螺丝M8根据相应的应用手册进行安装 ScrewM8-Mountingaccordingtovalidapplicationnote M 重量 Weight G Lagerung und Transport von Modulen mit TIM: siehe AN2012-07 Storage and shipment of modules with TIM: see AN2012-07 preparedby:SM dateofpublication:2016-03-31 approvedby:RN revision:V2.0 4 max. LsCE Tstg 最高基板工作温度 Maximumbaseplateoperationtemperature typ. 3,00 125 °C 125 °C 6,00 Nm 1,8 - 2,1 Nm 8,0 - 10 Nm 825 g 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF900R12IE4P 初步数据 PreliminaryData 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150°C 1800 1800 Tvj = 25°C Tvj = 125°C Tvj = 150°C 1600 1200 1200 1000 1000 IC [A] 1400 IC [A] 1400 800 800 600 600 400 400 200 200 0 0,0 0,5 1,0 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 1600 1,5 2,0 VCE [V] 2,5 3,0 0 3,5 传输特性IGBT,逆变器(典型) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=1.3Ω,RGoff=1.5Ω,VCE=600V 1800 Tvj = 25°C Tvj = 125°C Tvj = 150°C 1600 Eon, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 125°C Eoff, Tvj = 150°C 250 1400 200 1200 E [mJ] IC [A] 1000 800 150 100 600 400 50 200 0 5 6 7 8 9 VGE [V] 10 11 0 12 preparedby:SM dateofpublication:2016-03-31 approvedby:RN revision:V2.0 5 0 200 400 600 800 1000 1200 1400 1600 1800 IC [A] 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF900R12IE4P 初步数据 PreliminaryData 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=900A,VCE=600V 瞬态热阻抗IGBT,逆变器 transientthermalimpedanceIGBT,Inverter ZthJH=f(t) 450 100 Eon, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 125°C Eoff, Tvj = 150°C 400 ZthJH : IGBT 350 10 ZthJH [K/kW] E [mJ] 300 250 200 150 1 100 i: 1 2 3 4 ri[K/kW]: 3,56 14,3 20,8 9,45 τi[s]: 0,000916 0,0315 0,124 0,877 50 0 0,0 1,0 2,0 3,0 4,0 RG [Ω] 5,0 6,0 7,0 0,1 0,001 8,0 反偏安全工作区IGBT,逆变器（RBSOA） reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=±15V,RGoff=1.5Ω,Tvj=150°C 0,01 0,1 t [s] 1 10 正向偏压特性二极管,逆变器（典型) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 2000 1800 IC, Modul IC, Chip 1800 Tvj = 25°C Tvj = 125°C Tvj = 150°C 1600 1600 1400 1400 1200 1200 IF [A] IC [A] 1000 1000 800 800 600 600 400 400 200 200 0 0 200 400 600 800 VCE [V] 1000 1200 0 1400 preparedby:SM dateofpublication:2016-03-31 approvedby:RN revision:V2.0 6 0,0 0,5 1,0 1,5 VF [V] 2,0 2,5 3,0 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF900R12IE4P 初步数据 PreliminaryData 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=1.3Ω,VCE=600V 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=900A,VCE=600V 120 120 Erec, Tvj = 125°C Erec, Tvj = 150°C 110 100 100 90 90 80 70 70 E [mJ] E [mJ] 80 60 60 50 50 40 40 30 30 20 20 10 10 0 Erec, Tvj = 125°C Erec, Tvj = 150°C 110 0 200 400 600 0 800 1000 1200 1400 1600 IF [A] 瞬态热阻抗二极管,逆变器 transientthermalimpedanceDiode,Inverter ZthJH=f(t) 0,0 1,0 2,0 3,0 4,0 RG [Ω] 5,0 6,0 7,0 8,0 安全工作区二极管,逆变器(SOA) safeoperationareaDiode,Inverter(SOA) IR=f(VR) Tvj=150°C 100 2000 ZthJH : Diode IR, Modul 1800 1600 1400 10 IR [A] ZthJH [K/kW] 1200 1000 800 1 600 400 i: 1 2 3 4 ri[K/kW]: 9,03 24,7 39 14,5 τi[s]: 0,000749 0,0231 0,103 0,879 0,1 0,001 0,01 0,1 t [s] 1 200 0 10 preparedby:SM dateofpublication:2016-03-31 approvedby:RN revision:V2.0 7 0 200 400 600 800 VR [V] 1000 1200 1400 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF900R12IE4P 初步数据 PreliminaryData 负温度系数热敏电阻温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 100000 Rtyp R[Ω] 10000 1000 100 0 20 40 60 80 100 TNTC [°C] 120 140 160 preparedby:SM dateofpublication:2016-03-31 approvedby:RN revision:V2.0 8 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF900R12IE4P 初步数据 PreliminaryData 接线图/Circuitdiagram 封装尺寸/Packageoutlines 154 restricted area for Thermal Interface Material 60 6,5 1 36 0,2 screwing depth max. 16 (4x) 18 0,2 (2x) 22 +- 0,6 0 3 0,1 36,5 0,3 screwing depth max. 8 (7x) A 172 0,5 150 113 103 recommeded design height lower side PCB to baseplate 92 76 58 8 0,1 (7x) 25,9 0,25 + 5,5 - 00,1 0,25 A B C (10x) 10 20 0,1 37,7 0,25 B recommeded design height lower side bus bar to baseplate 28 0,1 5,5 17 0,1 0,6 A B C (4x) C 39 64 78 117 156 preparedby:SM dateofpublication:2016-03-31 approvedby:RN revision:V2.0 9 M8 5,5 4,3 24,5 0,5 14 39 25 21,5 0,3 10 45,5 0,5 21 0,3 M4 0,6 A B C (7X) 12,3 0,3 89 0,5 73 0,4 A (7x) 1 MAX 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF900R12IE4P 初步数据 PreliminaryData Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2015. 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