Ordering number : ENA2314A ECH8695R N-Channel Power MOSFET 24V, 11A, 9.1mΩ, Dual ECH8 Common Drain http://onsemi.com Features Low On-resistance 2.5V drive Common-drain type Protection diode in Built-in gate protection resistor Best suited for LiB charging and discharging switch Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Value Unit Drain to Source Voltage VDSS 24 V Gate to Source Voltage VGSS 12.5 V Drain Current (DC) ID 11 A Drain Current (Pulse) IDP PW10s, duty cycle1% 60 A Power Dissipation PD When mounted on ceramic substrate(900mm20.8mm) 1unit 1.4 W Total Dissipation PT When mounted on ceramic substrate(900mm20.8mm) Junction Temperature Tj Storage Temperature Tstg 1.5 W 150 C - 55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Resistance Ratings Parameter Symbol Junction to Ambient When mounted on ceramic substrate (900mm20.8mm) 1unit Value RJA 89.3 Unit C /W Electrical Characteristics at Ta 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 24 1 A V Gate to Source Leakage Current IGSS VGS=±8V, VDS=0V 1 A 1.3 V 9.1 m Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA Forward Transconductance gFS VDS=10V, ID=5A RDS(on)1 ID=5A, VGS=4.5V RDS(on)2 ID=5A, VGS=4.0V 5.8 7.3 9.5 m RDS(on)3 ID=5A, VGS=3.1V 6.5 8.2 11.5 m RDS(on)4 ID=2.5A, VGS=2.5V 7.6 9.5 13.3 m Static Drain to Source On-State Resistance 0.5 6.5 5.6 7.0 S Continued on next page. ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 April, 2014 42814HK TC-00003113/31714TKIM No.A2314-1/5 ECH8695R Continued from preceding page. Value Parameter Symbol Conditions Unit min typ max Turn-ON Delay Time td(on) 300 ns Rise Time tr 320 ns Turn-OFF Delay Time td(off) 19700 ns Fall Time tf 22300 ns Total Gate Charge Qg 10 nC Gate to Source Charge Qgs 1.6 nC Gate to Drain “Miller” Charge Qgd 1.5 nC Forward Diode Voltage VSD See specified Test Circuit. VDS=10V, VGS=4.5V, ID=11A IS=11A, VGS=0V 0.77 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Ordering & Package Information Device Package ECH8695R-TL-W ECH8 Packing Type:TL Shipping note 3,000 pcs. / reel Pb-Free and Halogen Free Marking US TL Electrical Connection 8 7 6 5 1 2 3 4 LOTNo. Switching Time Test Circuit No.A2314-2/5 ECH8695R No.A2314-3/5 ECH8695R No.A2314-4/5 ECH8695R Package Dimensions ECH8695R-TL-W SOT-28FL/ECH8 CASE 318BF ISSUE O unit : mm 1: Source1 2: Gate1 3: Source2 4: Gate2 5: Drain 6: Drain 7: Drain 8: Drain Recommended Soldering Footprint 2.8 0.6 0.4 0.65 Note on usage : Since the ECH8695R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.A2314-5/5