ECH8659 Power MOSFET 30V, 24mΩ, 7A, Dual N-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • 4V drive • Composite type, Facilitating high-density mounting • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance www.onsemi.com VDSS RDS(on) Max 24mΩ@ 10V ID Max 30V 41mΩ@ 4.5V 7A 55mΩ@ 4V Typical Applications • LiB Protection Switch • Motor Drive ELECTRICAL CONNECTION N-Channel 8 7 6 5 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS 30 Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID 7 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP 40 A PD 1.3 W PT 1.5 W Tj 150 °C Power Dissipation When mounted on ceramic substrate 2 (900mm × 0.8mm) 1unit Total Dissipation When mounted on ceramic substrate 2 (900mm × 0.8mm) Junction Temperature V 2 3 PACKING TYPE : TL 4 MARKING TE TL ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. THERMAL RESISTANCE RATINGS Parameter Symbol Value RθJA © Semiconductor Components Industries, LLC, 2015 May 2015 - Rev. 2 1 Lot No. Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Junction to Ambient When mounted on ceramic substrate 2 (900mm × 0.8mm) 1unit 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 96.1 1 Unit °C/W Publication Order Number : ECH8659/D ECH8659 ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Conditions Value min ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V 30 VDS=10V, ID=1mA 1.2 VDS=10V, ID=3.5A 2.2 typ max Unit V 1 μA ±10 μA 2.6 V 3.7 S RDS(on)1 RDS(on)2 ID=3.5A, VGS=10V 18 24 mΩ ID=2A, VGS=4.5V 29 41 mΩ RDS(on)3 Ciss ID=2A, VGS=4V 39 55 mΩ Output Capacitance Coss VDS=10V, f=1MHz Reverse Transfer Capacitance Crss Turn-ON Delay Time Static Drain to Source On-State Resistance Input Capacitance 710 pF 120 pF 72 pF td(on) 10 ns Rise Time tr 25 ns Turn-OFF Delay Time td(off) 43 ns Fall Time tf 25 ns Total Gate Charge Qg 11.8 nC Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd See specified Test Circuit VDS=15V, VGS=10V, ID=3.5A 2.4 nC 2.0 nC VSD Forward Diode Voltage IS=7A, VGS=0V 0.79 1.2 V Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 10V 0V VDD=15V VIN ID=3.5A RL=4.3Ω VIN D PW=10μs D.C.≤1% VOUT G P.G ECH8659 50Ω S www.onsemi.com 2 ECH8659 www.onsemi.com 3 ECH8659 www.onsemi.com 4 ECH8659 PACKAGE DIMENSIONS unit : mm SOT-28FL / ECH8 CASE 318BF ISSUE O to 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 Recommended Soldering Footprint 7 : Drain1 8 : Drain1 2.8 0.6 0.4 0.65 ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) TE SOT-28FL / ECH8 (Pb-Free / Halogen Free) 3,000 / Tape & Reel ECH8659-TL-H ECH8659-TL-W † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the ECH8659 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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