Ordering number : ENA2208A ECH8693R N-Channel Power MOSFET http://onsemi.com 24V, 14A, 7mΩ, Dual ECH8 Common Drain Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in Built-in gate protection resistor Best suited for LiB charging and discharging switch Halogen free compliance • • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol Conditions Ratings VDSS VGSS ID IDP Unit 24 V ±12.5 V 14 A PW≤10μs, duty cycle≤1% 60 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.4 W Total Dissipation PD PT 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On-State Resistance Symbol Conditions Ratings min typ V(BR)DSS IDSS IGSS ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V 24 VGS(off) | yfs | VDS=10V, ID=1mA VDS=10V, ID=5A 0.5 RDS(on)1 RDS(on)2 ID=5A, VGS=4.5V ID=5A, VGS=4.0V ID=5A, VGS=3.1V RDS(on)3 RDS(on)4 Unit max V 1 μA ±1 μA 1.3 8 ID=2.5A, VGS=2.5V V S 4.4 5.6 7 mΩ 4.6 5.8 7.5 mΩ 5.2 6.5 9.1 mΩ 6 7.5 10.5 mΩ Turn-ON Delay Time td(on) 545 ns Rise Time 525 ns Turn-OFF Delay Time tr td(off) Fall Time tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=10V, VGS=4.5V, ID=14A 18650 ns 22200 ns 13 nC 3 nC 2.4 IS=14A, VGS=0V 0.78 nC 1.2 V ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2013 October, 2013 O1613 TKIM TC-00003055/90413 TKIM TC-00003016 No. A2208-1/5 ECH8693R .5V 9.0 6.0 4.0 7.0 6.0 5.0 4.0 --25°C 8.0 8.0 3.0 2.0 25°C Drain Current, ID -- A 4.0V 3 .1V Drain Current, ID -- A 10.0 VDS=10V 10.0 =1 V GS 12.0 ID -- VGS 11.0 Ta=75 °C 1.8V 4.5V 2.5V ID -- VDS 14.0 2.0 1.0 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain to Source Voltage, VDS -- V 0 14 12 5A ID=2.5A 8 6 4 2 0 2 0 4 6 8 3 2 6 A I =5 4.5V, D V GS= 4 2 --40 --20 0 20 40 60 80 100 120 140 160 IT17196 S/W Time -- ID VDD=10V VGS=4.5V td (off) 3 2 tf 10K 7 5 3 2 1K 7 5 td(on) tr 3 2 0.01 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Forward Source to Drain Voltage, VSD -- V 100 0.1 0.9 100 7 5 3 2 Drain Current, ID -- A 3.0 2.5 2.0 1.5 1.0 0.5 0 2 4 6 8 5 10 Total Gate Charge, Qg -- nC 12 14 IT17202 7 2 1.0 3 5 10 7 5 3 2 1.0 7 5 3 2 7 10 IT17166 SOA 2 3.5 0 3 Source Current, IS -- A VDS=10V ID=14A 4.0 2 IT17165 Qg -- VGS 4.5 Gate to Source Voltage, VGS -- V =5A V, I D 0 . 4 = VGS =2.5 VGS 100K 7 5 Switching Time, S/W Time -- ns C 0.1 7 5 --25 °C 3 2 25° Ta= 75° C Forward Source Current, IS -- A 3 2 1.0 7 5 A =2.5 V, I D 8 Ambient Temperature, Ta -- °C VGS=0V 10 7 5 2.5 IT17162 =5A V, I D 1 . =3 V GS 10 IT17195 IS -- VSD 3 2 2.0 12 0 --60 10 Gate to Source Voltage, VGS -- V 1.5 RDS(on) -- Ta 14 Static Drain to Source On-State Resistance, RDS(on) -- mΩ 16 1.0 Gate to Source Voltage, VGS -- V Ta=25°C 18 10 0.5 IT17194 RDS(on) -- VGS 20 Static Drain to Source On-State Resistance, RDS(on) -- mΩ 1.0 IDP=60A(PW≤10μs) 100 μs 1m s ID=14A DC Operation in this area is limited by RDS(on). 0.1 7 Ta=25°C 5 Single pulse 3 2 When mounted on ceramic substrate 2 0.01 (900mm ×0.8mm) 1unit 2 3 5 7 0.1 2 3 5 7 1.0 0.01 op 10 ms 10 0m s era tio n 2 3 5 7 10 2 3 Drain to Source Voltage, VDS -- V 5 7100 IT17197 No. A2208-2/5 ECH8693R PD -- Ta Allowable Power Dissipation, PD -- W 1.6 When mounted on ceramic substrate (900mm2×0.8mm) 1.5 1.4 1.2 To tal Di ss ip ati 1u on ni t 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 150 IT17169 No. A2208-3/5 ECH8693R Package Dimensions ECH8693R-TL-W SOT-28FL/ECH8 CASE 318BF ISSUE O Unit : mm 1: Source1 2: Gate1 3: Source2 4: Gate2 5: Drain 6: Drain 7: Drain 8: Drain Land Pattern Example 2.8 0.6 0.4 0.65 PackingType: TL Ordering & Package Information Device Package ECH8693R-TL-W ECH8 Electrical Connection 8 7 6 Shipping memo 3,000 pcs./reel Pb-Free and Halogen Free Marking UQ TL LOT No. Switching Time Test Circuit 5 VDD=10V VIN 4.5V 0V ID=7A RL=1.4Ω VOUT VIN D PW=10μs D.C.≤1% Rg G 1 2 3 4 P.G ECH8693R 50Ω S Rg=1kΩ No. A2208-4/5 ECH8693R Note on usage : Since the ECH8693R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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