R3206 VCXO 5.0V 5 x 7 mm SMD, CMOS/TTL Features RoHS Status ±100 PPM APR Jitter <8 ps Excellent ∆F/∆V linearity TRISTATE Applications Wireless Data communications 3 MHz to 55MHz Electrical Specifications Parameter Frequency Range Symbol Frequency Stability ∆F/F Supply Current Min F Aging Operating Temperature Supply Voltage Condition MHz ppm First Year After First Year 3 1 ppm ppm 0 -40 4.75 Vcc 3MHz to 10MHz 10.1 to 20MHz 20.1 to 30MHz 30.1 and above Rise & Fall Times CMOS, 15pF, 20% to 80% Phase Noise Input Impedance Pad 1, Vc 5.0 2.0 3.0 5.0 7.0 1.0 100 2.0 V mA V ns ps -110 -132 -146 -158 -165 dBc/Hz 1000 KOhm 48/52 Note C <8 Ts CMOS @50% VDD +70 +85 5.25 3.5 4.0 6.0 8.0 0.4 VDD-0.4 1σ 100Hz 1KHz 10KHz 100KHz 1MHz Duty Cycle 55 30 “0” Level, sinking 16mA “1” Level CMOS, sourcing 8mA Start-up Time Unit Includes calibration at 25°C, operating temperature, change of input voltage, change of load, shock and vibration Output Levels Peak Jitter Max 3 T Icc Typ 5 ms 45/55 % @74.25MHz 75 South Street, Hopkinton, MA 01748 • 800-982-5737 • 508-497-6377 • FAX 508-435-5289 • www.valpeyfisher.com • Datasheet RevC1110 1 R3206 VCXO 5.0V 5 x 7 mm SMD, CMOS/TTL Electrical Specifications Parameter Symbol Condition Min Control Voltage Vc R3206 0.5 Control Voltage Bandwidth 15 APR ± 100 Tristate Input HIGH (>2.5V) or floating: Input LOW (<0.5V): Typ Max Unit 4.5 V 75 Note KHz ppm ACTIVE HIGH IMPEDANCE Environmental and Mechanical Conditions Parameter Mechanical Shock Thermal Shock Specification Per MIL-STD-202, Method 213, Cond. E Per MIL-STD-883, Method 1011, Cond. A Vibration Per MIL-STD-883, Method 2007, Cond. A Hermetic Seal Leak rate less than 5x10-8 atm.cc/s of helium How to Order: R3206 - - FREQUENCY Temperature Range Code B G Pin # 1 2 3 4 5 6 Model R3206-B R3206-G Specification 0C to +70C -40C to +85C Connections Vc Tristate Ground, Case Output N/C Vcc Marking Letter ID MR3206B MR3206G 75 South Street, Hopkinton, MA 01748 • 800-982-5737 • 508-497-6377 • FAX 508-435-5289 • www.valpeyfisher.com • Datasheet RevC1110 2