Freescale Semiconductor Technical Data Document Number: MMRF5015N Rev. 0, 9/2015 RF Power GaN on SiC Transistor MMRF5015N Depletion Mode HEMT This 125 W CW RF power GaN transistor is optimized for wideband operation up to 2700 MHz and inc ludes input matc hing for ex tended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and wideband RF applications. This part is characterized and performance is guaranteed for applications operating in the 1–2700 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies. 1–2700 MHz, 125 W CW, 50 V WIDEBAND RF POWER GaN ON SiC TRANSISTOR Typical Narrowband Performance: VDD = 50 Vdc, IDQ = 350 mA, TA = 25°C Frequency (MHz) Signal Type Pout (W) Gps (dB) ηD (%) 2500 (1) CW 125 CW 16.0 64.2 Pulse (100 μsec, 20% Duty Cycle) 125 Peak 16.6 68.0 2500 (1) OM--270--2 PLASTIC Typical Wideband Performance: VDD = 50 Vdc, IDQ = 300 mA, TA = 25°C Frequency (MHz) 200–2500 (2) Pout (W) Gps (dB) ηD (%) 100 Peak 12.0 40.0 Signal Type Pulse (100 μsec, 50% Duty Cycle) Load Mismatch/Ruggedness Frequency (MHz) 2500 (1) Signal Type VSWR Pin (W) Test Voltage Pulse (100 μsec, 20% Duty Cycle) > 20:1 at All Phase Angles 8.0 Peak (3 dB Overdrive) 50 1. Measured in 2500 MHz narrowband test circuit. 2. Measured in 200–2500 MHz broadband reference circuit. Result No Device Degradation (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Features • • • • • 1 Drain Gate 2 Decade bandwidth performance Plastic package enables improved thermal resistance Advanced GaN on SiC, offering high power density Input matched for extended wideband performance High ruggedness: > 20:1 VSWR Applications • Ideal for military end--use applications, including the following: – Narrowband and multi--octave wideband amplifiers – Radar – Jammers – EMC testing © Freescale Semiconductor, Inc., 2015. All rights reserved. RF Device Data Freescale Semiconductor, Inc. • Also suitable for commercial applications, including the following: – Public mobile radios, including emergency service radios – Industrial, scientific and medical – Wideband laboratory amplifiers – Wireless cellular infrastructure MMRF5015N 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS 125 Vdc Gate--Source Voltage VGS –8, 0 Vdc Operating Voltage VDD 0 to +50 Vdc Storage Temperature Range Tstg – 65 to +150 °C TC –55 to +150 °C Case Operating Temperature Range Operating Junction Temperature Range (1) TJ –55 to +225 °C PD 303 1.52 W W/°C Symbol Value (2) Unit Thermal Resistance, Junction to Case CW: Case Temperature 80°C, 125 W CW, 50 Vdc, IDQ = 350 mA, 2500 MHz RθJC 0.66 °C/W Thermal Impedance, Junction to Case Pulse: Case Temperature 56°C, 125 W Peak, 100 μsec Pulse Width, 20% Duty Cycle, 50 Vdc, IDQ = 350 mA, 2500 MHz ZθJC 0.16 °C/W Total Device Dissipation @ TC = 25°C Derate above 25°C Table 2. Thermal Characteristics Characteristic Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1B, passes 500 V Machine Model (per EIA/JESD22--A115) A, passes 100 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IDSS — — 5 mAdc V(BR)DSS 150 — — Vdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 25 mAdc) VGS(th) –3.8 –2.9 –2.3 Vdc Gate Quiescent Voltage (VDS = 50 Vdc, ID = 350 mAdc, Measured in Functional Test) VGS(Q) –3.3 –2.7 –2.3 Vdc Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = –4 Vdc) Crss — 1.0 — pF Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = –4 Vdc) Coss — 8.7 — pF Input Capacitance (3) (VDS = 50 Vdc, VGS = –4 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 52.0 — pF Off Characteristics Drain Leakage Current (VGS = –8 Vdc, VDS = 10 Vdc) Drain--Source Breakdown Voltage (VGS = –8 Vdc, ID = 25 mAdc) On Characteristics Dynamic Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955. 3. Part internally input matched. (continued) MMRF5015N 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 350 mA, Pout = 125 W Peak (25 W Avg.), f = 2500 MHz, 100 μsec Pulse Width, 20% Duty Cycle. [See note on correct biasing sequence.] Power Gain Gps — 16.6 — dB Drain Efficiency ηD — 68.0 — % Input Return Loss IRL — –12 –9 dB Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 350 mA Frequency (MHz) Signal Type 2500 Pulse (100 μsec, 20% Duty Cycle) VSWR > 20:1 at All Phase Angles Pin (W) Test Voltage, VDD Result 50 No Device Degradation 8.0 Peak (3 dB Overdrive) Table 6. Ordering Information Device MMRF5015NR5 Tape and Reel Information R5 Suffix = 50 Units, 24 mm Tape Width, 7--inch Reel Package OM--270--2 NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors Turning the device ON 1. Set VGS to the pinch--off (VP) voltage, typically –5 V 2. Turn on VDS to nominal supply voltage (50 V) 3. Increase VGS until IDS current is attained 4. Apply RF input power to desired level Turning the device OFF 1. Turn RF power off 2. Reduce VGS down to VP, typically –5 V 3. Reduce VDS down to 0 V (Adequate time must be allowed for VDS to reduce to 0 V to prevent severe damage to device.) 4. Turn off VGS MMRF5015N RF Device Data Freescale Semiconductor, Inc. 3 200–2500 MHz WIDEBAND REFERENCE CIRCUIT Section AA VDD VGG D74979 C4 C7 C6* L1 R1 C1* C12 C13* R3 R4 C3* C2* C16 C8 C10 C11 C9 Q1 C15* C14* C5* T2 T2 L2 R2 B1 C19* C18* C17* T1 T1 See Detail BB MMRF5015N Rev. 0 Section AA *C1, C2, C3, C5, C6, C13, C14, C15, C17, C18 and C19 are mounted vertically. T2 C19* B1 B2 C18* C17* T1 Detail BB 2X Figure 2. MMRF5015N Wideband Reference Circuit Component Layout — 200–2500 MHz MMRF5015N 4 RF Device Data Freescale Semiconductor, Inc. Table 7. MMRF5015N Wideband Reference Circuit Component Designations and Values — 200–2500 MHz Part Description Part Number Manufacturer B1, B2 Ferrite Beads T22-6 Micro Metals C1 0.3 pF Chip Capacitor ATC800B0R3BT500XT ATC C2 75 pF Chip Capacitor ATC800B750JT500XT ATC C3 24 pF Chip Capacitor ATC800B240JT500XT ATC C4 6.8 μF Chip Capacitor C4532X7R1H685K250KB TDK C5 0.5 pF Chip Capacitor ATC800B0R5BT500XT ATC C6, C13 5.6 pF Chip Capacitors ATC800B5R6BT500XT ATC C7, C8, C10, C12 0.015 μF Chip Capacitors GRM319R72A153KA01D Murata C9, C11 1 μF Chip Capacitors GRM31CR72A105KAO1L Murata C14, C15 1.0 pF Chip Capacitors ATC800B1R0BT500XT ATC C16 220 μF, 100 V Electrolytic Capacitor EEV-FK2A221M Panasonic-ECG C17 0.8 pF Chip Capacitor ATC800B0R8BT500XT ATC C18 56 pF Chip Capacitor ATC800B560JT500XT ATC C19 1.2 pF Chip Capacitor ATC800B1R2BT500XT ATC L1 12.5 nH Inductor A04TJLC Coilcraft L2 22 nH Inductor 1812SMS-22NJLC Coilcraft Q1 RF Power GaN Transistor MMRF5015NR5 Freescale R1, R2 100 Ω, 1/2 W Chip Resistors CRCW2010100RFKEF Vishay R3, R4 39 Ω, 1/4 W Chip Resistors CRCW120639R0FKEA Vishay T1 25 Ω Semi Rigid Coax, 0.770″ Shield Length UT-070-25 Micro--Coax T2 25 Ω Semi Rigid Coax, 0.850″ Shield Length UT-070-25 Micro--Coax PCB Rogers RO4350B, 0.030″, εr = 3.66 D74979 MTL MMRF5015N RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS — 200–2500 MHz WIDEBAND REFERENCE CIRCUIT VDD = 50 Vdc, IDQ = 300 mA Pulse Width = 100 μsec, Duty Cycle = 50% 20 Gps, POWER GAIN (dB) 19 100 W 18 ηD 70 63 56 49 42 17 16 35 15 28 10 W 14 13 Gps 21 14 100 W 12 ηD, DRAIN EFFICIENCY (%) 21 7 11 0 100 300 500 700 900 1100 1300 1500 1700 1900 2100 2300 2500 2700 f, FREQUENCY (MHz) Note: Pulse performance achieved with device clamped into the reference circuit; similar CW performance can be achieved by soldering the device to the heatsink. 17 148 VDD = 50 Vdc, IDQ = 300 mA, Pin = 5.8 W Pulse Width = 100 μsec, Duty Cycle = 50% 136 Gps, POWER GAIN (dB) 16 15 124 Pout 112 14 100 Gps 13 88 76 12 64 11 ηD 10 9 52 40 ηD, DRAIN EFFICIENCY (%) 18 Pout, OUTPUT POWER (WATTS) Figure 3. 200–2500 MHz Wideband Circuit Performance 8 28 100 300 500 700 900 1100 1300 1500 1700 1900 2100 2300 2500 2700 f, FREQUENCY (MHz) Figure 4. Power Gain, Output Power and Drain Efficiency versus Frequency at a Constant Input Power MMRF5015N 6 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — OPTIMIZED NARROWBAND PERFORMANCE Narrowband Performance and Impedance Information (TC = 25°C) The measured input and output impedances are presented to the input of the device at the package reference plane. Measurements are performed in Freescale narrowband fixture tuned at 500, 1000, 1500, 2000 and 2500 MHz. VDD = 50 Vdc, IDQ = 300 mA, CW 30 1500 MHz Gps, POWER GAIN (dB) 28 1000 MHz 500 MHz 26 Gps 22 72 64 56 ηD 24 80 500 MHz 48 2000 MHz 2500 MHz 1000 MHz 20 1500 MHz 18 16 40 32 24 2000 MHz 16 14 8 2500 MHz 12 0 20 40 60 80 100 120 140 ηD, DRAIN EFFICIENCY (%) 32 160 180 0 200 Pout, OUTPUT POWER (WATTS) Figure 5. Power Gain and Drain Efficiency versus Output Power f MHz Zsource Ω Zload Ω 500 0.7 + j2.9 6.0 + j3.3 1000 1.1 – j0.03 5.6 + j2.3 1500 0.9 – j1.2 3.3 + j3.0 2000 1.3 – j1.8 3.8 + j0.9 2500 3.5 – j4.0 3.1 + j0.3 Zsource = Test circuit impedance as measured from gate to ground. Zload 50 Ω = Test circuit impedance as measured from drain to ground. Input Matching Network Output Matching Network Device Under Test Zsource 50 Ω Zload Figure 6. Narrowband Fixtures: Series Equivalent Source and Load Impedances MMRF5015N RF Device Data Freescale Semiconductor, Inc. 7 2500 MHz NARROWBAND PRODUCTION TEST FIXTURE VGG VDD C8 C7 D68403 C10 C9 C13 C13 C4 C5 C2 C3 C12 C11 R1 C6 CUT OUT AREA C1 MMRF5015N Rev. 1 Figure 7. MMRF5015N Narrowband Test Circuit Component Layout — 2500 MHz Table 8. MMRF5015N Narrowband Test Circuit Component Designations and Values — 2500 MHz Part Description Part Number Manufacturer C1 3.0 pF Chip Capacitor ATC600F3R0BT250XT ATC C2, C3, C4, C5, C6 12 pF Chip Capacitors ATC600F120JT250XT ATC C7, C11 1000 pF Chip Capacitors ATC800B102JT50XT ATC C8 0.1 μF Chip Capacitor GRM319R72A104KA01D Murata C9, C10 4.7 μF Chip Capacitors GRM32ER71H475KA88B Murata C12 1.0 μF Chip Capacitor GRM32CR72A105KA35L Murata C13 220 μF, 100 V Electrolytic Capacitor EEV-FK2A221M Panasonic-ECG R1 51 Ω, 1/8 W Chip Resistor SG732ATTD51R0F KOA Speer — 18 AWG Teflon Wire, Total Wire Length = 4.0″/101.6 mm — — PCB Rogers RO4350B, 0.030″, εr = 3.66 D68403 MTL MMRF5015N 8 RF Device Data Freescale Semiconductor, Inc. 2X Solder Pads 0.470 (11.94) 0.237(1) (6.02) 0.257(1) (6.53) 0.220 (5.59) 0.427(1) (10.85) Inches (mm) 1. Slot dimensions are minimum dimensions and exclude milling tolerances. Figure 8. PCB Pad Layout for OM--270--2 MRF5015 ATYYWWB Figure 9. Product Marking MMRF5015N RF Device Data Freescale Semiconductor, Inc. 9 PACKAGE DIMENSIONS MMRF5015N 10 RF Device Data Freescale Semiconductor, Inc. MMRF5015N RF Device Data Freescale Semiconductor, Inc. 11 MMRF5015N 12 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION AND TOOLS Refer to the following resources to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Development Tools • Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. 2. 3. 4. Go to http://www.freescale.com/rf Search by part number Click part number link Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Sept. 2015 Description • Initial Release of Data Sheet MMRF5015N RF Device Data Freescale Semiconductor, Inc. 13 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2015 Freescale Semiconductor, Inc. MMRF5015N Document Number: MMRF5015N Rev. 0, 9/2015 14 RF Device Data Freescale Semiconductor, Inc.