Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MMRF5015N
Rev. 0, 9/2015
RF Power GaN on SiC Transistor
MMRF5015N
Depletion Mode HEMT
This 125 W CW RF power GaN transistor is optimized for wideband operation
up to 2700 MHz and inc ludes input matc hing for ex tended bandwidth
performance. With its high gain and high ruggedness, this device is ideally
suited for CW, pulse and wideband RF applications.
This part is characterized and performance is guaranteed for applications
operating in the 1–2700 MHz band. There is no guarantee of performance when
this part is used in applications designed outside of these frequencies.
1–2700 MHz, 125 W CW, 50 V
WIDEBAND
RF POWER GaN ON SiC
TRANSISTOR
Typical Narrowband Performance: VDD = 50 Vdc, IDQ = 350 mA, TA = 25°C
Frequency
(MHz)
Signal Type
Pout
(W)
Gps
(dB)
ηD
(%)
2500 (1)
CW
125 CW
16.0
64.2
Pulse
(100 μsec,
20% Duty Cycle)
125 Peak
16.6
68.0
2500
(1)
OM--270--2
PLASTIC
Typical Wideband Performance: VDD = 50 Vdc, IDQ = 300 mA, TA = 25°C
Frequency
(MHz)
200–2500 (2)
Pout
(W)
Gps
(dB)
ηD
(%)
100 Peak
12.0
40.0
Signal Type
Pulse
(100 μsec,
50% Duty Cycle)
Load Mismatch/Ruggedness
Frequency
(MHz)
2500 (1)
Signal Type
VSWR
Pin
(W)
Test
Voltage
Pulse
(100 μsec,
20% Duty Cycle)
> 20:1 at
All Phase
Angles
8.0 Peak
(3 dB
Overdrive)
50
1. Measured in 2500 MHz narrowband test circuit.
2. Measured in 200–2500 MHz broadband reference circuit.
Result
No Device
Degradation
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Features
•
•
•
•
•
1 Drain
Gate 2
Decade bandwidth performance
Plastic package enables improved thermal resistance
Advanced GaN on SiC, offering high power density
Input matched for extended wideband performance
High ruggedness: > 20:1 VSWR
Applications
• Ideal for military end--use applications,
including the following:
– Narrowband and multi--octave
wideband amplifiers
– Radar
– Jammers
– EMC testing
© Freescale Semiconductor, Inc., 2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
• Also suitable for commercial applications,
including the following:
– Public mobile radios, including
emergency service radios
– Industrial, scientific and medical
– Wideband laboratory amplifiers
– Wireless cellular infrastructure
MMRF5015N
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
125
Vdc
Gate--Source Voltage
VGS
–8, 0
Vdc
Operating Voltage
VDD
0 to +50
Vdc
Storage Temperature Range
Tstg
– 65 to +150
°C
TC
–55 to +150
°C
Case Operating Temperature Range
Operating Junction Temperature Range
(1)
TJ
–55 to +225
°C
PD
303
1.52
W
W/°C
Symbol
Value (2)
Unit
Thermal Resistance, Junction to Case
CW: Case Temperature 80°C, 125 W CW, 50 Vdc, IDQ = 350 mA, 2500 MHz
RθJC
0.66
°C/W
Thermal Impedance, Junction to Case
Pulse: Case Temperature 56°C, 125 W Peak, 100 μsec Pulse Width,
20% Duty Cycle, 50 Vdc, IDQ = 350 mA, 2500 MHz
ZθJC
0.16
°C/W
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Table 2. Thermal Characteristics
Characteristic
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B, passes 500 V
Machine Model (per EIA/JESD22--A115)
A, passes 100 V
Charge Device Model (per JESD22--C101)
IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
IDSS
—
—
5
mAdc
V(BR)DSS
150
—
—
Vdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 25 mAdc)
VGS(th)
–3.8
–2.9
–2.3
Vdc
Gate Quiescent Voltage
(VDS = 50 Vdc, ID = 350 mAdc, Measured in Functional Test)
VGS(Q)
–3.3
–2.7
–2.3
Vdc
Reverse Transfer Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = –4 Vdc)
Crss
—
1.0
—
pF
Output Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = –4 Vdc)
Coss
—
8.7
—
pF
Input Capacitance (3)
(VDS = 50 Vdc, VGS = –4 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
52.0
—
pF
Off Characteristics
Drain Leakage Current
(VGS = –8 Vdc, VDS = 10 Vdc)
Drain--Source Breakdown Voltage
(VGS = –8 Vdc, ID = 25 mAdc)
On Characteristics
Dynamic Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
3. Part internally input matched.
(continued)
MMRF5015N
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 350 mA, Pout = 125 W Peak (25 W Avg.), f = 2500 MHz,
100 μsec Pulse Width, 20% Duty Cycle. [See note on correct biasing sequence.]
Power Gain
Gps
—
16.6
—
dB
Drain Efficiency
ηD
—
68.0
—
%
Input Return Loss
IRL
—
–12
–9
dB
Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 350 mA
Frequency
(MHz)
Signal
Type
2500
Pulse
(100 μsec,
20% Duty Cycle)
VSWR
> 20:1 at All Phase Angles
Pin
(W)
Test Voltage, VDD
Result
50
No Device Degradation
8.0 Peak
(3 dB Overdrive)
Table 6. Ordering Information
Device
MMRF5015NR5
Tape and Reel Information
R5 Suffix = 50 Units, 24 mm Tape Width, 7--inch Reel
Package
OM--270--2
NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors
Turning the device ON
1. Set VGS to the pinch--off (VP) voltage, typically –5 V
2. Turn on VDS to nominal supply voltage (50 V)
3. Increase VGS until IDS current is attained
4. Apply RF input power to desired level
Turning the device OFF
1. Turn RF power off
2. Reduce VGS down to VP, typically –5 V
3. Reduce VDS down to 0 V (Adequate time must be allowed
for VDS to reduce to 0 V to prevent severe damage to device.)
4. Turn off VGS
MMRF5015N
RF Device Data
Freescale Semiconductor, Inc.
3
200–2500 MHz WIDEBAND REFERENCE CIRCUIT
Section AA
VDD
VGG
D74979
C4
C7
C6*
L1
R1
C1*
C12
C13*
R3 R4
C3*
C2*
C16
C8 C10 C11
C9
Q1
C15*
C14*
C5*
T2
T2
L2
R2
B1
C19*
C18*
C17*
T1
T1
See
Detail BB
MMRF5015N
Rev. 0
Section AA
*C1, C2, C3, C5, C6, C13, C14, C15, C17, C18 and C19 are mounted vertically.
T2
C19*
B1
B2
C18*
C17*
T1
Detail BB 2X
Figure 2. MMRF5015N Wideband Reference Circuit Component Layout — 200–2500 MHz
MMRF5015N
4
RF Device Data
Freescale Semiconductor, Inc.
Table 7. MMRF5015N Wideband Reference Circuit Component Designations and Values — 200–2500 MHz
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Beads
T22-6
Micro Metals
C1
0.3 pF Chip Capacitor
ATC800B0R3BT500XT
ATC
C2
75 pF Chip Capacitor
ATC800B750JT500XT
ATC
C3
24 pF Chip Capacitor
ATC800B240JT500XT
ATC
C4
6.8 μF Chip Capacitor
C4532X7R1H685K250KB
TDK
C5
0.5 pF Chip Capacitor
ATC800B0R5BT500XT
ATC
C6, C13
5.6 pF Chip Capacitors
ATC800B5R6BT500XT
ATC
C7, C8, C10, C12
0.015 μF Chip Capacitors
GRM319R72A153KA01D
Murata
C9, C11
1 μF Chip Capacitors
GRM31CR72A105KAO1L
Murata
C14, C15
1.0 pF Chip Capacitors
ATC800B1R0BT500XT
ATC
C16
220 μF, 100 V Electrolytic Capacitor
EEV-FK2A221M
Panasonic-ECG
C17
0.8 pF Chip Capacitor
ATC800B0R8BT500XT
ATC
C18
56 pF Chip Capacitor
ATC800B560JT500XT
ATC
C19
1.2 pF Chip Capacitor
ATC800B1R2BT500XT
ATC
L1
12.5 nH Inductor
A04TJLC
Coilcraft
L2
22 nH Inductor
1812SMS-22NJLC
Coilcraft
Q1
RF Power GaN Transistor
MMRF5015NR5
Freescale
R1, R2
100 Ω, 1/2 W Chip Resistors
CRCW2010100RFKEF
Vishay
R3, R4
39 Ω, 1/4 W Chip Resistors
CRCW120639R0FKEA
Vishay
T1
25 Ω Semi Rigid Coax, 0.770″ Shield Length
UT-070-25
Micro--Coax
T2
25 Ω Semi Rigid Coax, 0.850″ Shield Length
UT-070-25
Micro--Coax
PCB
Rogers RO4350B, 0.030″, εr = 3.66
D74979
MTL
MMRF5015N
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — 200–2500 MHz
WIDEBAND REFERENCE CIRCUIT
VDD = 50 Vdc, IDQ = 300 mA
Pulse Width = 100 μsec, Duty Cycle = 50%
20
Gps, POWER GAIN (dB)
19
100 W
18
ηD
70
63
56
49
42
17
16
35
15
28
10 W
14
13
Gps
21
14
100 W
12
ηD, DRAIN EFFICIENCY (%)
21
7
11
0
100 300 500 700 900 1100 1300 1500 1700 1900 2100 2300 2500 2700
f, FREQUENCY (MHz)
Note: Pulse performance achieved with device clamped into the
reference circuit; similar CW performance can be achieved by
soldering the device to the heatsink.
17
148
VDD = 50 Vdc, IDQ = 300 mA, Pin = 5.8 W
Pulse Width = 100 μsec, Duty Cycle = 50%
136
Gps, POWER GAIN (dB)
16
15
124
Pout
112
14
100
Gps
13
88
76
12
64
11
ηD
10
9
52
40
ηD, DRAIN
EFFICIENCY (%)
18
Pout, OUTPUT
POWER (WATTS)
Figure 3. 200–2500 MHz Wideband Circuit Performance
8
28
100 300 500 700 900 1100 1300 1500 1700 1900 2100 2300 2500 2700
f, FREQUENCY (MHz)
Figure 4. Power Gain, Output Power and Drain Efficiency
versus Frequency at a Constant Input Power
MMRF5015N
6
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — OPTIMIZED NARROWBAND PERFORMANCE
Narrowband Performance and Impedance Information (TC = 25°C)
The measured input and output impedances are presented to the input of the device at the package reference plane.
Measurements are performed in Freescale narrowband fixture tuned at 500, 1000, 1500, 2000 and 2500 MHz.
VDD = 50 Vdc, IDQ = 300 mA, CW
30
1500 MHz
Gps, POWER GAIN (dB)
28
1000 MHz
500 MHz
26
Gps
22
72
64
56
ηD
24
80
500 MHz
48
2000 MHz
2500 MHz
1000 MHz
20
1500 MHz
18
16
40
32
24
2000 MHz 16
14
8
2500 MHz
12
0
20
40
60
80
100
120
140
ηD, DRAIN EFFICIENCY (%)
32
160
180
0
200
Pout, OUTPUT POWER (WATTS)
Figure 5. Power Gain and Drain Efficiency
versus Output Power
f
MHz
Zsource
Ω
Zload
Ω
500
0.7 + j2.9
6.0 + j3.3
1000
1.1 – j0.03
5.6 + j2.3
1500
0.9 – j1.2
3.3 + j3.0
2000
1.3 – j1.8
3.8 + j0.9
2500
3.5 – j4.0
3.1 + j0.3
Zsource = Test circuit impedance as measured
from gate to ground.
Zload
50 Ω
= Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Output
Matching
Network
Device
Under
Test
Zsource
50 Ω
Zload
Figure 6. Narrowband Fixtures: Series Equivalent Source and Load Impedances
MMRF5015N
RF Device Data
Freescale Semiconductor, Inc.
7
2500 MHz NARROWBAND PRODUCTION TEST FIXTURE
VGG
VDD
C8 C7
D68403
C10 C9
C13
C13
C4 C5
C2 C3
C12
C11
R1
C6
CUT OUT AREA
C1
MMRF5015N
Rev. 1
Figure 7. MMRF5015N Narrowband Test Circuit Component Layout — 2500 MHz
Table 8. MMRF5015N Narrowband Test Circuit Component Designations and Values — 2500 MHz
Part
Description
Part Number
Manufacturer
C1
3.0 pF Chip Capacitor
ATC600F3R0BT250XT
ATC
C2, C3, C4, C5, C6
12 pF Chip Capacitors
ATC600F120JT250XT
ATC
C7, C11
1000 pF Chip Capacitors
ATC800B102JT50XT
ATC
C8
0.1 μF Chip Capacitor
GRM319R72A104KA01D
Murata
C9, C10
4.7 μF Chip Capacitors
GRM32ER71H475KA88B
Murata
C12
1.0 μF Chip Capacitor
GRM32CR72A105KA35L
Murata
C13
220 μF, 100 V Electrolytic Capacitor
EEV-FK2A221M
Panasonic-ECG
R1
51 Ω, 1/8 W Chip Resistor
SG732ATTD51R0F
KOA Speer
—
18 AWG Teflon Wire, Total Wire Length = 4.0″/101.6 mm
—
—
PCB
Rogers RO4350B, 0.030″, εr = 3.66
D68403
MTL
MMRF5015N
8
RF Device Data
Freescale Semiconductor, Inc.
2X Solder Pads
0.470
(11.94)
0.237(1)
(6.02)
0.257(1)
(6.53)
0.220
(5.59)
0.427(1)
(10.85)
Inches
(mm)
1. Slot dimensions are minimum dimensions and exclude milling tolerances.
Figure 8. PCB Pad Layout for OM--270--2
MRF5015
ATYYWWB
Figure 9. Product Marking
MMRF5015N
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
MMRF5015N
10
RF Device Data
Freescale Semiconductor, Inc.
MMRF5015N
RF Device Data
Freescale Semiconductor, Inc.
11
MMRF5015N
12
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Development Tools
• Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1.
2.
3.
4.
Go to http://www.freescale.com/rf
Search by part number
Click part number link
Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Sept. 2015
Description
• Initial Release of Data Sheet
MMRF5015N
RF Device Data
Freescale Semiconductor, Inc.
13
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E 2015 Freescale Semiconductor, Inc.
MMRF5015N
Document Number: MMRF5015N
Rev. 0, 9/2015
14
RF Device Data
Freescale Semiconductor, Inc.