RF Military High Power Avionics Devices

RF MILITARY
MMRF2010N | MMRF1312H
MMRF1314H | MMRF1317H
HIGH POWER LDMOS AVIONICS DEVICES
APRIL 2016
EXTERNAL USE
NXP RF Military Overview
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NXP RF (formerly Freescale) is #1 in RF power for cellular infrastructure*
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Strong presence in ISM, mobile radio, broadcast and avionics
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June 2013: Freescale RF announced new focus supporting U.S. defense
industry
NXP RF Military Value Proposition
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•
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Products and Technology
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Leveraging 20 years of innovation in RF power
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Highest performing RF portfolio
Support
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U.S. LDMOS fabrication and dedicated internal manufacturing
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NXP product longevity program (10 or 15 years)
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Dedicated U.S.-based applications & systems engineering support
Compliance
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ITAR compliant, secure technical data handling
*Source: ABI 2013 Report
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EXTERNAL USE
MMRF2010N: 250 W Peak – L-Band Transistor
1030–1090 MHz
• 1030 to 1090 MHz
• 250 W Peak, 50 V
• Gain: 32.1 dB @ 1090 MHz, Drain Efficiency: 61.4%
• Housed in TO-270WB plastic package
• Ruggedness: > 10:1 VSWR
50 V
250 W Peak
• Product Longevity Program: warranted availability until 2029
• Typical Applications
• IFF and secondary radar
Available Reference Circuits:
1. 1090 MHz
2. 1030-1090 MHz
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EXTERNAL USE
MMRF2010N: Featured Device
Features
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Characterized over 1030–1090 MHz
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On-chip input (50 ohm) and interstage matching
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Single ended
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Integrated ESD protection
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Low thermal resistance
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Integrated quiescent current temperature compensation with enable/disable function
Competitive Advantages
3
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Suitable for use in pulse applications with large duty cycles and long pulses
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Device in NXP 15 year Product Longevity Program
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Able to replace multiple RF amplifiers with one wideband PA
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Application circuit support
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Dedicated RF Military team
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Availability: Device is in production as earless and gull winged. Orderable part number is
MMRF2010NR1.
EXTERNAL USE
MMRF2010N Applications Circuit: 1030 to 1090 MHz
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EXTERNAL USE
MMRF1312H: 1200 W Peak – L-Band Transistor
• High power 1200 W Peak @ P3dB across 900 to 1215 MHz in one circuit
900–1215 MHz
• Gain: 17.3 dB @ 960–1215 MHz, Drain Efficiency: 54%
• Housed in NI-1230 air-cavity ceramic package
• High Ruggedness: > 20:1 VSWR
• Product Longevity Program: warranted availability until 2030
•Typical Applications
52 V
1200 W Peak
• High power L-Band radar applications
• Avionics navigation applications
• Commercial aviation secondary surveillance radar
Available Reference Circuits:
1. 1030 MHz
2. 900-1215 MHz
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EXTERNAL USE
MMRF1312H: Featured Device
Features
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Internally input and output matched for broadband operation and ease of use
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Device can be used in a single-ended, push-pull or quadrature configuration
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High ruggedness, handles > 20:1 VSWR
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Integrated ESD protection with greater negative voltage range for improved
Class C operation and gate voltage pulsing
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Characterized with series equivalent large-signal impedance parameters
Competitive Advantages
6
•
Suitable for use in pulse applications with large duty cycles and long pulses
•
Device in NXP 15 year Product Longevity Program
•
Able to replace multiple RF amplifiers with one wideband PA
•
Application circuit support
•
Dedicated RF Military team
•
Availability: Device is in production as eared, earless and gull winged. Orderable part number is
MMRF1312HR5.
EXTERNAL USE
MMRF1312H Applications Circuit: 900 to 1215 MHz
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EXTERNAL USE
MMRF1312H: Gain, Efficiency and IRL versus Frequency
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EXTERNAL USE
MMRF1312H: Gain and Efficiency versus Power
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EXTERNAL USE
MMRF1312H: Power and Efficiency versus Frequency
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EXTERNAL USE
MMRF1314H: 1000 W Peak – L-Band Transistor
• High power 1000 W Peak across 1200 to 1400 MHz in one circuit
1200 –1400 MHz
• Gain: 15.5 dB @ 1200–1400 MHz, Drain Efficiency: 46.5%
• Housed in NI-1230 air-cavity ceramic package
• High Ruggedness: > 20:1 VSWR
• Product Longevity Program: warranted availability until 2030
•Typical Applications
52 V
• High power L-Band radar applications
1000 W Peak
Available Reference Circuits:
1. 1400 MHz
2. 1200-1400 MHz
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EXTERNAL USE
MMRF1314H: Featured Device
Features
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Internally input and output matched for broadband operation and ease of use
•
Device can be used in a single-ended, push-pull or quadrature configuration
•
High ruggedness, handles > 20:1 VSWR
•
Integrated ESD protection with greater negative voltage range for improved Class C operation and
gate voltage pulsing
•
Characterized with series equivalent large-signal impedance parameters
Competitive Advantages
12
•
Device in NXP 15 year Product Longevity Program
•
Able to replace multiple RF amplifiers with one wideband PA
•
Application circuit support
•
Dedicated RF Military team
•
Availability: Device is in production as eared, earless and gull winged. Orderable part number is
MMRF1314HR5.
EXTERNAL USE
MMRF1314H Applications Circuit: 1200 to 1400 MHz
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EXTERNAL USE
MMRF1314H: Gain, Efficiency and IRL versus Frequency
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EXTERNAL USE
MMRF1314H: Power and Efficiency versus Frequency
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EXTERNAL USE
MMRF1314H: Gain and Efficiency versus Power
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EXTERNAL USE
MMRF1317H: 1500 W Peak – IFF Transistor
• High power 1500 W Peak @ P3dB
1030–1090 MHz
• Gain: 18.9 dB @ 1030 MHz, Drain Efficiency: 56%
• Housed in NI-1230 air-cavity ceramic package
• High Ruggedness: > 10:1 VSWR
• Product Longevity Program: warranted availability until 2030
•Typical Applications
50 V
• Defense and commercial pulse applications, such as IFF and
secondary surveillance radars
1500 W Peak
Available Reference Circuit:
1. 1030 to 1090 MHz
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EXTERNAL USE
MMRF1317H: Featured Device
Features
•
Internally input and output matched for broadband operation and ease of use
•
Device can be used in a single-ended, push-pull or quadrature configuration
•
High ruggedness, handles > 10:1 VSWR
•
Integrated ESD protection with greater negative voltage range for improved Class C operation and
gate voltage pulsing
•
Characterized with series equivalent large-signal impedance parameters
Competitive Advantages
18
•
Device in NXP 15 year Product Longevity Program
•
Able to replace multiple RF amplifiers with one wideband PA
•
Application circuit support
•
Dedicated RF Military team
•
Availability: Device is in production as eared, earless and gull winged. Orderable part number is
MMRF1317HR5.
EXTERNAL USE
MMRF1317H Applications Circuit: 1030 to 1090 MHz
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EXTERNAL USE
MMRF1317H: Gain and Efficiency versus Power
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EXTERNAL USE