RF MILITARY MMRF2010N | MMRF1312H MMRF1314H | MMRF1317H HIGH POWER LDMOS AVIONICS DEVICES APRIL 2016 EXTERNAL USE NXP RF Military Overview • NXP RF (formerly Freescale) is #1 in RF power for cellular infrastructure* • Strong presence in ISM, mobile radio, broadcast and avionics • June 2013: Freescale RF announced new focus supporting U.S. defense industry NXP RF Military Value Proposition • • • Products and Technology − Leveraging 20 years of innovation in RF power − Highest performing RF portfolio Support − U.S. LDMOS fabrication and dedicated internal manufacturing − NXP product longevity program (10 or 15 years) − Dedicated U.S.-based applications & systems engineering support Compliance − ITAR compliant, secure technical data handling *Source: ABI 2013 Report 1 EXTERNAL USE MMRF2010N: 250 W Peak – L-Band Transistor 1030–1090 MHz • 1030 to 1090 MHz • 250 W Peak, 50 V • Gain: 32.1 dB @ 1090 MHz, Drain Efficiency: 61.4% • Housed in TO-270WB plastic package • Ruggedness: > 10:1 VSWR 50 V 250 W Peak • Product Longevity Program: warranted availability until 2029 • Typical Applications • IFF and secondary radar Available Reference Circuits: 1. 1090 MHz 2. 1030-1090 MHz 2 EXTERNAL USE MMRF2010N: Featured Device Features • Characterized over 1030–1090 MHz • On-chip input (50 ohm) and interstage matching • Single ended • Integrated ESD protection • Low thermal resistance • Integrated quiescent current temperature compensation with enable/disable function Competitive Advantages 3 • Suitable for use in pulse applications with large duty cycles and long pulses • Device in NXP 15 year Product Longevity Program • Able to replace multiple RF amplifiers with one wideband PA • Application circuit support • Dedicated RF Military team • Availability: Device is in production as earless and gull winged. Orderable part number is MMRF2010NR1. EXTERNAL USE MMRF2010N Applications Circuit: 1030 to 1090 MHz 4 EXTERNAL USE MMRF1312H: 1200 W Peak – L-Band Transistor • High power 1200 W Peak @ P3dB across 900 to 1215 MHz in one circuit 900–1215 MHz • Gain: 17.3 dB @ 960–1215 MHz, Drain Efficiency: 54% • Housed in NI-1230 air-cavity ceramic package • High Ruggedness: > 20:1 VSWR • Product Longevity Program: warranted availability until 2030 •Typical Applications 52 V 1200 W Peak • High power L-Band radar applications • Avionics navigation applications • Commercial aviation secondary surveillance radar Available Reference Circuits: 1. 1030 MHz 2. 900-1215 MHz 5 EXTERNAL USE MMRF1312H: Featured Device Features • Internally input and output matched for broadband operation and ease of use • Device can be used in a single-ended, push-pull or quadrature configuration • High ruggedness, handles > 20:1 VSWR • Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing • Characterized with series equivalent large-signal impedance parameters Competitive Advantages 6 • Suitable for use in pulse applications with large duty cycles and long pulses • Device in NXP 15 year Product Longevity Program • Able to replace multiple RF amplifiers with one wideband PA • Application circuit support • Dedicated RF Military team • Availability: Device is in production as eared, earless and gull winged. Orderable part number is MMRF1312HR5. EXTERNAL USE MMRF1312H Applications Circuit: 900 to 1215 MHz 7 EXTERNAL USE MMRF1312H: Gain, Efficiency and IRL versus Frequency 8 EXTERNAL USE MMRF1312H: Gain and Efficiency versus Power 9 EXTERNAL USE MMRF1312H: Power and Efficiency versus Frequency 10 EXTERNAL USE MMRF1314H: 1000 W Peak – L-Band Transistor • High power 1000 W Peak across 1200 to 1400 MHz in one circuit 1200 –1400 MHz • Gain: 15.5 dB @ 1200–1400 MHz, Drain Efficiency: 46.5% • Housed in NI-1230 air-cavity ceramic package • High Ruggedness: > 20:1 VSWR • Product Longevity Program: warranted availability until 2030 •Typical Applications 52 V • High power L-Band radar applications 1000 W Peak Available Reference Circuits: 1. 1400 MHz 2. 1200-1400 MHz 11 EXTERNAL USE MMRF1314H: Featured Device Features • Internally input and output matched for broadband operation and ease of use • Device can be used in a single-ended, push-pull or quadrature configuration • High ruggedness, handles > 20:1 VSWR • Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing • Characterized with series equivalent large-signal impedance parameters Competitive Advantages 12 • Device in NXP 15 year Product Longevity Program • Able to replace multiple RF amplifiers with one wideband PA • Application circuit support • Dedicated RF Military team • Availability: Device is in production as eared, earless and gull winged. Orderable part number is MMRF1314HR5. EXTERNAL USE MMRF1314H Applications Circuit: 1200 to 1400 MHz 13 EXTERNAL USE MMRF1314H: Gain, Efficiency and IRL versus Frequency 14 EXTERNAL USE MMRF1314H: Power and Efficiency versus Frequency 15 EXTERNAL USE MMRF1314H: Gain and Efficiency versus Power 16 EXTERNAL USE MMRF1317H: 1500 W Peak – IFF Transistor • High power 1500 W Peak @ P3dB 1030–1090 MHz • Gain: 18.9 dB @ 1030 MHz, Drain Efficiency: 56% • Housed in NI-1230 air-cavity ceramic package • High Ruggedness: > 10:1 VSWR • Product Longevity Program: warranted availability until 2030 •Typical Applications 50 V • Defense and commercial pulse applications, such as IFF and secondary surveillance radars 1500 W Peak Available Reference Circuit: 1. 1030 to 1090 MHz 17 EXTERNAL USE MMRF1317H: Featured Device Features • Internally input and output matched for broadband operation and ease of use • Device can be used in a single-ended, push-pull or quadrature configuration • High ruggedness, handles > 10:1 VSWR • Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing • Characterized with series equivalent large-signal impedance parameters Competitive Advantages 18 • Device in NXP 15 year Product Longevity Program • Able to replace multiple RF amplifiers with one wideband PA • Application circuit support • Dedicated RF Military team • Availability: Device is in production as eared, earless and gull winged. Orderable part number is MMRF1317HR5. EXTERNAL USE MMRF1317H Applications Circuit: 1030 to 1090 MHz 19 EXTERNAL USE MMRF1317H: Gain and Efficiency versus Power 20 EXTERNAL USE