SC2602/SC2602A Synchronous Voltage Mode Controller for Distributed Power Supply Applications POWER MANAGEMENT Description Features The SC2602 and SC2602A are low-cost, full featured, synchronous voltage-mode controllers designed for use in single ended power supply applications where efficiency is of primary concern. Synchronous operation allows for the elimination of heat sinks in many applications. The SC2602s are ideal for implementing DC/DC converters needed to power advanced microprocessors in low cost systems, or in distributed power applications where efficiency is important. Internal level-shift, high-side drive circuitry, and preset shoot-thru control, allows the use of inexpensive N-channel power switches. Synchronous operation for high efficiency (95%) RDS(ON) current sensing On-chip power good and OVP functions Small size with minimum external components Soft Start Enable function Applications Microprocessor core supply Low cost synchronous applications Voltage Regulator Modules (VRM) DDR termination supplies Networking power supplies Sequenced power supplies SC2602s features include temperature compensated voltage reference, triangle wave oscillator and current sense comparator circuitry. Power good signaling, shutdown, and over voltage protection are also provided. The SC2602 operates at a fixed 200kHz and the SC2602A at 500kHz, providing a choice for optimum compromise between efficiency, external component size, and cost. Two SC2602s can be used together to sequence power up of telecom systems. The power good of the first SC2602 connected to the enable of the second SC2602 makes this possible. Typical Application Circuit Typical Distributed Power Supply +5V + R1 1k R2 R4 10 C1 0.1 C2 0.1 1 VCC GND 0.1 R3 1k PWRGD SS/SHDN 13 C3 0.1 4.99K 3 OVP 4 OVP COMP OCSET SENSE PHASE BSTH DRVH BSTL C7 680/6.3V C8 680/6.3V 14 PWRGD 2 C6 680/6.3V C5 10.0 U1 SC2602 Vin _ 5V SHDN 820pF 12 R8 124* 11 R7 127 5 D1 MBR0520 10 +12V C4 1.0 6 7 PGND DRVL Q1 STP40NE 9 8 R5 3.9 L1 2uH + Q2 STP40NE C9 180/4V R6 2.2 Figure 1. Revision: November 18, 2004 C10 180/4V C11 180/4V C12 180/4V C13 180/4V Vout=2.5V * _ NOTE: *) Vout = 1.265 x (1+R8/R7) 1 www.semtech.com SC2602/SC2602A POWER MANAGEMENT Absolute Maximum Ratings Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified in the Electrical Characteristics section is not implied. Exposure to Absolute Maximum rated conditions for extended periods of time may affect device reliability. Parameter Symbol Maximum Units VIN -1.0 to 16 (20V Surge) V ± 0.5 V PHASE to GND(1) -0.5 to 18 (20V Surge) V BSTH to PHASE 16 (20V Surge) V VCC, BSTL to GND PGND to GND Thermal Resistance Junction to Case θJC 45 °C/W Thermal Resistance Junction to Ambient θJ A 115 °C/W Operating Temperature Range TA -40 to +85 °C Maximum Junction Temperature TJ 125 °C Storage Temperature Range TSTG -65 to +150 °C Lead Temperature (Soldering) 10 Sec. TLEAD 300 °C ESD Rating (Human Body Model) ESD 2 kV Note: (1) -1.5V to 20V for 25ns repetitive every cycle. Electrical Characteristics Unless specified: VCC = 4.75V to 12.6V; GND = PGND = 0V; FB = VO; VBSTL = 12V; VBSTH-PHASE = 12V; TJ = 25oC Parameter C onditions Min Typ Max U nits Supply Voltage VC C 4.2 12.6 V Supply C urrent EN = VC C 6 10 mA Li ne Regulati on VO = 2.5V 0.5 % Gm 1.8 mS 50 dB Pow er Supply Error Amplifier Transconductance Gai n (AOL) Input Bi as 5 8 µA kHz Oscillator Osci llator Frequency S C 2602 180 200 220 S C 2602A 450 500 550 90 95 % 1 V Osci llator Max D uty C ycle Internal Ramp Peak to Peak MOSFET D rivers D H Source/Si nk BSTH - D H = 4.5V, D H- PHASE = 2V 1 A D L Source/Si nk BSTL - D L = 4.5V. D L - PGND . = 2V 1 A 2004 Semtech Corp. 2 www.semtech.com SC2602/SC2602A POWER MANAGEMENT Electrical Characteristics (Cont.) Unless specified: VCC = 4.75V to 12.6V; GND = PGND = 0V; FB = VO; VBSTL = 12V; VBSTH-PHASE = 12V; TJ = 25oC Parameter Conditions Min Typ Max Units PROTECTION OVP Threshold Voltage OVP Source Current 20 VOVP = 3V % 10 mA Power Good Threshold 88 112 % Dead Time 45 100 ns Over current Set Isink 2.0V ≤ VOCSET ≤ 12V 180 200 220 µA 0°C to 70°C 1.252 1.265 1.278 V +1 % 12 µA Reference Reference Voltage Accuracy -1 Soft Start Charge Current VSS = 1.5V Discharge Current VSS = 1.5V 8.0 10 1.5 µA Note: (1) Specification refers to application circuit (Figure 1). 2004 Semtech Corp. 3 www.semtech.com SC2602/SC2602A POWER MANAGEMENT Pin Configuration Ordering Information Device(2) Frequency Package(1) SC2602STRT 200kHz SO-14 SC2602ASTRT 500kHz Top View VCC GND SS / SHDN COMP PWRGD OVP OCSET PHASE S C 2602E V B SENSE BSTH DH Notes: (1) Only available in tape and reel packaging. A reel contains 2500 devices. (2) Lead free product. This product is fully WEEE and RoHS compliant. BSTL PGND Evaluation Board DL (14-Pin SOIC) Pin Descriptions Pin # Pin Name Pin Function 1 VC C 2 PWRGD 3 OVP 4 OCSET Sets the converter overcurrent trip point. 5 PHASE Input from the phase node between the MOSFETs. 6 DH 7 PGND 8 DL 9 BSTL Bootstrap, low side driver. 10 BSTH Bootstrap, high side driver. 11 SENSE Voltage sense input. 12 COMP Compensation pin. 13 SS/SHDN 14 GND Chip supply voltage. Logic high indicates correct output voltage. Over voltage protection. High side driver output. Power ground. Low side driver output. Soft start. A capacitor to ground sets the slow start time. Signal ground. Note: (1) All logic level inputs and outputs are open collector TTL compatible. 2004 Semtech Corp. 4 www.semtech.com SC2602/SC2602A POWER MANAGEMENT Block Diagram Theory of Operation Synchronous Buck Converter Primary VCORE power is provided by a synchronous, voltage-mode pulse width modulated (PWM) controller. This section has all the features required to build a high efficiency synchronous buck converter, including “Power Good” flag, shut-down, and cycle-by-cycle current limit. As SENSE increases, the output voltage of the error amplifier decreases. This causes a reduction in the ontime of the high-side MOSFET connected to DH, hence lowering the output voltage. Under Voltage Lockout The under voltage lockout circuit of the SC2602 assures that the high-side MOSFET driver outputs remain in the off state whenever the supply voltage drops below set parameters. Lockout occurs if VCC falls below 4.1V. Normal operation resumes once VCC rises above 4.2V. The output voltage of the synchronous converter is set and controlled by the output of the error amplifier. The external resistive divider reference voltage is derived from an internal trimmed-bandgap voltage reference (See Fig. 1). The inverting input of the error amplifier receives its voltage from the SENSE pin. Over-Voltage Protection The over-voltage protection pin (OVP) is high only when the voltage at SENSE is 20% higher than the target value programmed by the external resistor divider. The OVP pin is internally connected to a PNP’s collector. The internal oscillator uses an on-chip capacitor and trimmed precision current sources to set the oscillation frequency to 200kHz/500kHz. The triangular output of the oscillator sets the reference voltage at the inverting input of the comparator. The non-inverting input of the comparator receives it’s input voltage from the error amplifier. When the oscillator output voltage drops below the error amplifier output voltage, the comparator output goes high. This pulls DL low, turning off the low-side FET, and DH is pulled high, turning on the high-side FET (once the cross-current control allows it). When the oscillator voltage rises back above the error amplifier output voltage, the comparator output goes low. This pulls DH low, turning off the high-side FET, and DL is pulled high, turning on the low-side FET (once the cross-current control allows it). 2004 Semtech Corp. Power Good The power good function is to confirm that the regulator outputs are within +/-10% of the programmed level. PWRGD remains high as long as this condition is met. PWRGD is connected to an internal open collector NPN transistor. 5 www.semtech.com SC2602/SC2602A POWER MANAGEMENT Applications Information (Cont.) Soft Start Initially, SS/SHDN sources 10µA of current to charge an external capacitor. The outputs of the error amplifiers are clamped to a voltage proportional to the voltage on SS/SHDN. This limits the on-time of the high-side MOSFETs, thus leading to a controlled ramp-up of the output voltages. An over-current condition occurs when the high-side drive is turned on, but the PHASE node does not reach the voltage level set at the OCSET pin. The PHASE node is sampled only once per cycle during the valley of the triangular oscillator. Once an over-current occurs, the highside drive is turned off and the low-side drive turns on and the SS/SHDN pin begins to sink 2µA. The soft-start voltage will begin to decrease as the 2µA of current discharges the external capacitor. When the soft-start voltage reaches 0.8V, the SS/SHDN pin will begin to source 10µA and begin to charge the external capacitor causing the soft-start voltage to rise again. Again, when the softstart voltage reaches the level of the internal oscillator, switching will occur. RDS(ON) Current Limiting The current limit threshold is set by connecting an external resistor from the VCC supply to OCSET. The voltage drop across this resistor is due to the 200µA internal sink sets the voltage at the pin. This voltage is compared to the voltage at the PHASE node. This comparison is made only when the high-side drive is high to avoid false current limit triggering due to uncontributing measurements from the MOSFETs off-voltage. When the voltage at PHASE is less than the voltage at OCSET, an overcurrent condition occurs and the soft start cycle is initiated. The synchronous switch turns off and SS/SHDN starts to sink 2µA. When SS/SHDN reaches 0.8V, it then starts to source 10µA and a new cycle begins. If the over-current condition is no longer present, normal operation will continue. If the over-current condition is still present, the SS/SHDN pin will again begin to sink 2µA. This cycle will continue indefinitely until the overcurrent condition is removed. In conclusion, below is shown a typical “12V Application Circuit” which has a BSTH voltage derived by bootstrapping input voltage to the PHASE node through diode D1. This circuit is very useful in cases where only input power of 12V is available. Hiccup Mode During power up, the SS/SHDN pin is internally pulled low until VCC reaches the undervoltage lockout level of 4.2V. Once VCC has reached 4.2V, the SS/SHDN pin is released and begins to source 10µA of current to the external soft-start capacitor. As the soft-start voltage rises, the output of the internal error amplifier is clamped to this voltage. When the error signal reaches the level of the internal triangular oscillator, which swings from 1V to 2V at a fixed frequency of 200kHz/500kHz, switching occurs. As the error signal crosses over the oscillator signal, the duty cycle of the PWM signal continues to increase until the output comes into regulation. If an overcurrent condition has not occurred the soft-start voltage will continue to rise and level off at about 2.2V. 2004 Semtech Corp. In order to prevent substrate glitching, a small-signal diode should be placed in close proximity to the chip with cathode connected to PHASE and anode connected to PGND. 6 www.semtech.com SC2602/SC2602A POWER MANAGEMENT Application Circuit Typical 12V Application Circuit with Bootstrapped BSTH +5V + R1 1k R2 1.74k C1 0.1 R4 10 C2 0.1 C5 10.0 U1 SC2602 1 VCC GND 2 OVP R3 1k PWRGD 3 OVP 4 OCSET SS/SHDN 13 COMP 12 SENSE 11 C7 270/16V C8 270/16V D2 MBRA130 14 PWRGD C6 270/16V C3 0.1 4.99K _ Vin 12V SHDN 820pF R9 205* R8 127 5 D1 MBR0520 6 PHASE BSTH DRVH BSTL 10 9 1.0 7 PGND DRVL 8 Q1 STP40NE C4 R5 3.9 Q2 STP40NE R6 2.2 C9 1.0 L1 4uH + D3 MBRD1035 Optional C10 180/4V C11 180/4V C12 180/4V C13 180/4V C14 180/4V Vout=3.3 _ V* NOTE: *) Vout = 1.265 x (1+R9/R8) 2004 Semtech Corp. 7 www.semtech.com SC2602/SC2602A POWER MANAGEMENT Typical Characteristics Wave forms are shown for SC2602 and are similiar for SC2602A but at higher frequency. Output Ripple Voltage Ch1: Vo_rpl Gate Drive Waveforms Ch1: Top FET Ch2: Bottom FET 1. VIN = 5V; VO = 3.3V; IOUT = 12A PIN Descriptions Ch1: Vo_rpl 2. VIN = 5V; VOUT = 1.3V; IOUT = 12A 2004 Semtech Corp. Ch1: Top FET Ch2: Bottom FET 8 www.semtech.com SC2602/SC2602A POWER MANAGEMENT Typical Characteristics (Cont.) Ch1: Vo_rpl 2. VIN = 5V; VOUT = 1.3V; IOUT = 12A 2004 Semtech Corp. Ch1: Top FET Ch2: Bottom FET 9 www.semtech.com SC2602/SC2602A POWER MANAGEMENT Typical Characteristics (Cont.) Hiccup Mode Ch1: Ch2: Ch3: Ch4: Vin Vss Top Gate Vout Vin = 5V Vout = 3.3V Vbst = 12V Iout = S.C. Start Up Mode Ch1: Vin Ch2: Vss Ch3: Top Gate Ch4: Vout Vin = 5V Vout = 3.3V Iout = 2A Vbst = 12V 2004 Semtech Corp. 10 www.semtech.com SC2602/SC2602A POWER MANAGEMENT Typical Characteristics (Cont.) Math Cad Close Loop Stability Analysis Output Filter Schematic: 2004 Semtech Corp. 11 www.semtech.com SC2602/SC2602A POWER MANAGEMENT Typical Characteristics (Cont.) Error Amplifier Schematic 2004 Semtech Corp. 12 www.semtech.com SC2602/SC2602A POWER MANAGEMENT Typical Characteristics (Cont.) 2004 Semtech Corp. 13 www.semtech.com SC2602/SC2602A POWER MANAGEMENT Typical Characteristics (Cont.) 2004 Semtech Corp. 14 www.semtech.com 2004 Semtech Corp. OVP PWRGD R1 C1 +5V R2 C2 Vbias R3 C3 15 D3 7 6 5 4 3 2 1 R4 PGND DRVH PHASE OCSET OVP PWRGD VCC U1 DRVL BSTL BSTH SENSE COMP SS/SHDN GND 8 9 10 11 12 13 14 C16 R6 C4 C17 C12 C11 SHDN D5 D2 R18 R15 R17 R16 R5 C27 Q2 Q3 Q1 R7 C28 C13 C19 R19 C18 R11 R8 D4 L2 R12 C14 C26 R9 C5 Q4 C20 R10 R13 C6 D1 C21 R14 C15 C7 L1 C22 C23 C8 C9 C24 C10 C25 _ Vin + _ Vout + SC2602/SC2602A POWER MANAGEMENT Evaluation Board Schematic www.semtech.com SC2602/SC2602A POWER MANAGEMENT Outline Drawing - S0-14 A D e N DIM A A1 A2 b c D E1 E e h L L1 N 01 aaa bbb ccc E/2 2X E1 E ccc C 1 2X N/2 TIPS 2 3 B D DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX 1.35 1.75 0.25 0.10 1.65 1.25 0.31 0.51 0.25 0.17 8.55 8.65 8.75 3.80 3.90 4.00 6.00 BSC 1.27 BSC 0.25 0.50 0.40 0.72 1.04 (1.04) 14 0° 8° 0.10 0.25 0.20 .053 .069 .010 .004 .065 .049 .012 .020 .007 .010 .337 .341 .344 .150 .154 .157 .236 BSC .050 BSC .010 .020 .016 .028 .041 (.041) 14 0° 8° .004 .010 .008 aaa C h A2 A SEATING PLANE C bxN bbb A1 h H C A-B D c GAGE PLANE 0.25 SIDE VIEW SEE DETAIL L (L1) A DETAIL 01 A NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 4. REFERENCE JEDEC STD MS-012, VARIATION AB. Land Pattern - S0-14 X DIM (C) G C G P X Y Z Z Y DIMENSIONS INCHES MILLIMETERS (.205) .118 .050 .024 .087 .291 (5.20) 3.00 1.27 0.60 2.20 7.40 P NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. 2. REFERENCE IPC-SM-782A, RLP NO. 302A. Contact Information Semtech Corporation Power Management Products Division 200 Flynn Road, Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 2004 Semtech Corp. 16 www.semtech.com