IPA60R650CE,IPD60R650CE
MOSFET
600VCoolMOS™CEPowerTransistor
TO-220FP
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
DPAK
tab
1
2
3
Drain
Pin 2, Tab
Gate
Pin 1
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Source
Pin 3
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
650
mΩ
Id.
9.9
A
Qg.typ
20.5
nC
ID,pulse
19
A
Eoss@400V
1.9
µJ
Type/OrderingCode
Package
IPA60R650CE
PG-TO 220 FullPAK
IPD60R650CE
PG-TO 252
Final Data Sheet
Marking
60S650CE
1
RelatedLinks
see Appendix A
2016-03-31
600VCoolMOS™CEPowerTransistor
IPA60R650CE,IPD60R650CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Final Data Sheet
2
2016-03-31
600VCoolMOS™CEPowerTransistor
IPA60R650CE,IPD60R650CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
9.9
6.2
A
TC=25°C
TC=100°C
-
19
A
TC=25°C
-
-
133
mJ
ID=1.3A; VDD=50V; see table 11
EAR
-
-
0.20
mJ
ID=1.3A; VDD=50V; see table 11
Avalanche current, repetitive
IAR
-
-
1.3
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...480V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation (Non FullPAK)
TO-251
Ptot
-
-
82
W
TC=25°C
Storage temperature
Tstg
-40
-
150
°C
-
Operating junction temperature
Tj
-40
-
150
°C
-
Continuous diode forward current
IS
-
-
7
A
TC=25°C
Diode pulse current
IS,pulse
-
-
19
A
TC=25°C
Reverse diode dv/dt3)
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 9
Maximum diode commutation speed
dif/dt
-
-
500
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C
see table 9
Power dissipation (FullPAK)
TO-220FP
Ptot
-
-
28
W
TC=25°C
Mounting torque (FullPAK)
TO-220FP
-
-
-
50
Ncm M2.5 screws
Insulation withstand voltage for
TO-220FP
VISO
-
-
2500
V
Vrms,TC=25°C,t=1min
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse
EAS
Avalanche energy, repetitive
2)
2Thermalcharacteristics
Table3Thermalcharacteristics(FullPAK)TO-220FP
Parameter
Symbol
Thermal resistance, junction - case
Values
Min.
Typ.
Max.
RthJC
-
-
4.5
°C/W -
Thermal resistance, junction - ambient RthJA
-
-
80
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
-
-
260
°C
Tsold
1.6mm (0.063 in.) from case for 10s
1)
Limited by Tj max. TO252 equivalent, Maximum duty cycle D=0.50
Pulse width tp limited by Tj,max
3)
IdenticallowsideandhighsideswitchwithidenticalRG
2)
Final Data Sheet
3
2016-03-31
600VCoolMOS™CEPowerTransistor
IPA60R650CE,IPD60R650CE
Table4ThermalcharacteristicsTO-252
Parameter
Symbol
Thermal resistance, junction - case
Values
Unit
Note/TestCondition
Min.
Typ.
Max.
RthJC
-
-
1.52
°C/W -
Thermal resistance, junction - ambient RthJA
-
-
62
°C/W device on PCB, minimal footprint
Thermal resistance, junction - ambient
RthJA
for SMD version
-
35
45
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
layer, 70µm thickness) copper area
°C/W
for drain connection and cooling.
PCB is vertical without air stream
cooling.
Soldering temperature, wave & reflow
soldering allowed
-
-
260
°C
Final Data Sheet
Tsold
4
reflow MSL1
2016-03-31
600VCoolMOS™CEPowerTransistor
IPA60R650CE,IPD60R650CE
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table5Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=0.25mA
3.0
3.5
V
VDS=VGS,ID=0.2mA
-
10
1
-
µA
VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.54
1.40
0.65
-
Ω
VGS=10V,ID=2.4A,Tj=25°C
VGS=10V,ID=2.4A,Tj=150°C
Gate resistance
RG
-
10
-
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
600
-
Gate threshold voltage
V(GS)th
2.5
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table6Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
440
-
pF
VGS=0V,VDS=100V,f=1MHz
Output capacitance
Coss
-
30
-
pF
VGS=0V,VDS=100V,f=1MHz
Effective output capacitance,
energy related1)
Co(er)
-
21
-
pF
VGS=0V,VDS=0...480V
Effective output capacitance,
time related2)
Co(tr)
-
88
-
pF
ID=constant,VGS=0V,VDS=0...480V
Turn-on delay time
td(on)
-
10
-
ns
VDD=400V,VGS=13V,ID=3A,
RG=6.8Ω;seetable10
Rise time
tr
-
8
-
ns
VDD=400V,VGS=13V,ID=3A,
RG=6.8Ω;seetable10
Turn-off delay time
td(off)
-
58
-
ns
VDD=400V,VGS=13V,ID=3A,
RG=6.8Ω;seetable10
Fall time
tf
-
11
-
ns
VDD=400V,VGS=13V,ID=3A,
RG=6.8Ω;seetable10
Unit
Note/TestCondition
Table7Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
2.5
-
nC
VDD=480V,ID=3A,VGS=0to10V
Gate to drain charge
Qgd
-
10.5
-
nC
VDD=480V,ID=3A,VGS=0to10V
Gate charge total
Qg
-
20.5
-
nC
VDD=480V,ID=3A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.4
-
V
VDD=480V,ID=3A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
Co(tr)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
2)
Final Data Sheet
5
2016-03-31
600VCoolMOS™CEPowerTransistor
IPA60R650CE,IPD60R650CE
Table8Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,IF=3A,Tj=25°C
250
-
ns
VR=400V,IF=3A,diF/dt=100A/µs;
see table 9
-
2.1
-
µC
VR=400V,IF=3A,diF/dt=100A/µs;
see table 9
-
16
-
A
VR=400V,IF=3A,diF/dt=100A/µs;
see table 9
Min.
Typ.
Max.
VSD
-
0.9
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
6
2016-03-31
600VCoolMOS™CEPowerTransistor
IPA60R650CE,IPD60R650CE
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation(NonFullPAK)
Diagram2:Powerdissipation(FullPAK)
90
30
80
25
70
20
50
Ptot[W]
Ptot[W]
60
40
30
15
10
20
5
10
0
0
25
50
75
100
125
0
150
0
25
50
TC[°C]
75
100
125
150
TC[°C]
Ptot=f(TC)
Ptot=f(TC)
Diagram3:Max.transientthermalimpedance(NonFullPAK)
Diagram4:Max.transientthermalimpedance(FullPAK)
1
101
10
0.5
100
100
0.5
0.2
ZthJC[K/W]
ZthJC[K/W]
0.1
0.2
0.1
0.05
0.02
10-1
0.05
0.02
10-1
single pulse
0.01
single pulse
10-2
10-5
0.01
10-4
10-3
10-2
10-1
10-2
10-5
10-4
10-3
tp[s]
10-1
100
101
tp[s]
ZthJC=f(tP);parameter:D=tp/T
Final Data Sheet
10-2
ZthJC=f(tP);parameter:D=tp/T
7
2016-03-31
600VCoolMOS™CEPowerTransistor
IPA60R650CE,IPD60R650CE
Diagram5:Safeoperatingarea(NonFullPAK)
Diagram6:Safeoperatingarea(FullPAK)
2
102
10
1 µs
1 µs
101
101
10 µs
10 µs
100 µs
100 µs
1 ms
100
1 ms
10 ms
100
DC
ID[A]
ID[A]
DC
10
-1
10-1
10-2
10-2
10-3
10-3
100
101
102
10-4
103
100
101
102
VDS[V]
VDS[V]
ID=f(VDS);TC=25°C;D=0;parameter:tp
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram7:Safeoperatingarea(NonFullPAK)
Diagram8:Safeoperatingarea(FullPAK)
2
103
102
10
1 µs
101
1 µs
101
10 µs
10 µs
100 µs
100 µs
1 ms
100
1 ms
10 ms
100
ID[A]
ID[A]
DC
DC
10-1
10-1
10-2
10-2
10-3
10-3
100
101
102
103
10-4
100
101
102
VDS[V]
VDS[V]
ID=f(VDS);TC=80°C;D=0;parameter:tp
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
8
103
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600VCoolMOS™CEPowerTransistor
IPA60R650CE,IPD60R650CE
Diagram9:Typ.outputcharacteristics
Diagram10:Typ.outputcharacteristics
20
12
20 V
20 V
10 V
10 V
8V
16
9
8V
7V
ID[A]
ID[A]
12
7V
6V
6
8
5.5 V
6V
3
5.5 V
4
5V
4.5 V
5V
4.5 V
0
0
5
10
15
0
20
0
5
10
VDS[V]
15
20
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram11:Typ.drain-sourceon-stateresistance
Diagram12:Drain-sourceon-stateresistance
2.0
1.60
1.50
1.9
1.40
1.8
1.30
1.7
1.20
5V
5.5 V
6.5 V
6V
RDS(on)[Ω]
RDS(on)[Ω]
1.10
7V
1.6
10 V
1.5
1.4
1.00
0.90
98%
typ
0.80
0.70
1.3
0.60
1.2
0.50
0.40
1.1
1.0
0.30
0
2
4
6
8
10
12
0.20
-50
-25
0
25
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
50
75
100
125
150
Tj[°C]
RDS(on)=f(Tj);ID=2.4A;VGS=10V
9
2016-03-31
600VCoolMOS™CEPowerTransistor
IPA60R650CE,IPD60R650CE
Diagram13:Typ.transfercharacteristics
Diagram14:Typ.gatecharge
20
10
25 °C
9
16
8
14
7
12
6
10
VGS[V]
ID[A]
18
150 °C
4
6
3
4
2
2
1
0
2
4
6
8
10
0
12
480 V
5
8
0
120 V
0
5
VGS[V]
10
15
20
25
125
150
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=3.0Apulsed;parameter:VDD
Diagram15:Forwardcharacteristicsofreversediode
Diagram16:Avalancheenergy
2
10
150
25 °C
125 °C
125
101
IF[A]
EAS[mJ]
100
100
75
50
25
10-1
0.0
0.5
1.0
1.5
2.0
0
25
50
VSD[V]
100
Tj[°C]
IF=f(VSD);parameter:Tj
Final Data Sheet
75
EAS=f(Tj);ID=1.3A;VDD=50V
10
2016-03-31
600VCoolMOS™CEPowerTransistor
IPA60R650CE,IPD60R650CE
Diagram17:Drain-sourcebreakdownvoltage
Diagram18:Typ.capacitances
104
700
680
660
103
Ciss
620
C[pF]
VBR(DSS)[V]
640
600
102
Coss
580
101
560
Crss
540
520
-75
-50
-25
0
25
50
75
100
125
150
175
100
0
100
Tj[°C]
200
300
400
500
VDS[V]
VBR(DSS)=f(Tj);ID=0.25mA
C=f(VDS);VGS=0V;f=1MHz
Diagram19:Typ.Cossstoredenergy
2.5
2.0
Eoss[µJ]
1.5
1.0
0.5
0.0
0
100
200
300
400
500
VDS[V]
Eoss=f(VDS)
Final Data Sheet
11
2016-03-31
600VCoolMOS™CEPowerTransistor
IPA60R650CE,IPD60R650CE
5TestCircuits
Table9Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
IF
QF
IF
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
t
10 %Irrm
QS
Table10Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
ton
tr
td(off)
tf
toff
Table11Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
Final Data Sheet
12
ID
VDS
2016-03-31
600VCoolMOS™CEPowerTransistor
IPA60R650CE,IPD60R650CE
6PackageOutlines
),/
'
'#
'$
9
9#
9$
9%
9&
;
)
)#
*
=
=#
0
+
.
.#
@3
3
/,..,/*6*45
MIN
MAX
4.50
4.90
2.34
2.85
2.86
2.42
0.65
0.90
0.95
1.38
0.95
1.51
0.65
1.38
0.65
1.51
0.40
0.63
15.67
16.15
8.97
9.83
10.00
10.65
2.54 (BSC)
,0(+*5
MIN
0.177
0.092
0.095
0.026
0.037
0.037
0.026
0.026
0.016
0.617
0.353
0.394
)1(7/*06 01"
Z8B00003319
5('.*
0
2.5
0
2.5
5mm
*7412*'0 241-*(6,10
0.100 (BSC)
5.08
3
28.70
12.78
2.83
2.95
3.15
MAX
0.193
0.112
0.113
0.035
0.054
0.059
0.054
0.059
0.025
0.636
0.387
0.419
0.200
3
29.75
13.75
3.45
3.38
3.50
1.130
0.503
0.111
0.116
0.124
1.171
0.541
0.136
0.133
0.138
,557* )'6*
05-05-2014
4*8,5,10
04
Dimensions do not include mold flash, protrusions or gate burrs
Figure 1
Final Data Sheet
Outline PG-TO 220 FullPAK, dimensions in mm/inches
13
2016-03-31
600V CoolMOS™ CE Power Transistor
IPA60R650CE, IPD60R650CE
*) mold flash not included
DIM
A
A1
b
b2
b3
c
c2
D
D1
E
E1
e
e1
N
H
L
L3
L4
F1
F2
F3
F4
F5
F6
Figure 2
Final Data Sheet
MILLIMETERS
MIN
MAX
2.16
2.41
0.00
0.15
0.64
0.89
0.65
1.15
5.00
5.50
0.46
0.60
0.46
0.98
5.97
6.22
5.02
5.84
6.40
6.73
4.70
5.60
2.29 (BSC)
4.57 (BSC)
3
9.40
10.48
1.18
1.70
0.90
1.25
0.51
1.00
10.60
6.40
2.20
5.80
5.76
1.20
INCHES
MIN
0.085
0.000
0.025
0.026
0.197
0.018
0.018
0.235
0.198
0.252
0.185
0.370
0.046
0.035
0.020
MAX
0.095
0.006
0.035
0.045
0.217
0.024
0.039
0.245
0.230
0.265
0.220
0.090 (BSC)
0.180 (BSC)
3
0.413
0.067
0.049
0.039
0.417
0.252
0.087
0.228
0.227
0.047
DOCUMENT NO.
Z8B00003328
SCALE
0
2.0
0
2.0
4mm
EUROPEAN PROJECTION
ISSUE DATE
01-09-2015
REVISION
05
Outline PG-TO 252, dimensions in mm/inches
14
2016-03-31
600V CoolMOS™ CE Power Transistor
IPA60R650CE, IPD60R650CE
7
Appendix A
Table 12
Related Links
• IFX CoolMOS TM CE Webpage: www.infineon.com
• IFX CoolMOS TM CE application note: www.infineon.com
• IFX CoolMOS TM CE simulation model:
www.infineon.com
• IFX Design tools: www.infineon.com
Final Data Sheet
15
2016-03-31
600V CoolMOS™ CE Power Transistor
IPA60R650CE, IPD60R650CE
Revision History
IPA60R650CE, IPD60R650CE
Revision: 2016-03-31
Previous Revision
Date
Subjects (major changes since last revision)
2014-09-25
Release of final version
2016-03-31
Modified Id, Rthjc. Modified SOA and Zthjc curves
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CoolGaN™, CoolMOS™, CoolSET™, CoolSiC™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, DrBlade™,
EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, Infineon™,
ISOFACE™, IsoPACK™, i-Wafer™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OPTIGA™, OptiMOS™, ORIGA™, POWERCODE™,
PRIMARION™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, ReverSave™, SatRIC™, SIEGET™, SIPMOS™, SmartLEWIS™,
SOLID FLASH™, SPOC™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Trademarks updated August 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
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© 2016 Infineon Technologies AG
All Rights Reserved.
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Final Data Sheet
16
2016-03-31