IPL60R125C7 MOSFET 600VCoolMOSªC7PowerTransistor ThinPAK8x8 CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. 600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation. The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm². Features •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •IncreasedMOSFETdv/dtruggednessto120V/ns •IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package •SMDpackagewithverylowparasiticinductanceforeasydevicecontrol •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) •4pinkelvinsourceconcept Drain Pin 5 Gate Pin 1 Driver Source Pin 2 Power Source Pin 3,4 Benefits •IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe application •Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency •Enablinghighersystemefficiencybylowerswitchinglosses •Increasedpowerdensitysolutionsduetosmallerpackages •OptimizedPCBassemblyandlayoutsolutions •Suitableforapplicationssuchasserver,telecomandsolar •Upto0.5%betterfullloadefficiency@100kHzcomparedtoconventional 3pinpackage Applications PFCstagesandPWMstages(TTF,LLC)forhighpower/performance SMPSe.g.Computing,Server,Telecom,UPSandSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 125 mΩ Qg.typ 34 nC ID,pulse 66 A ID,continuous @ Tj<150°C 30 A Eoss@400V 4 µJ Body diode di/dt 380 A/µs Type/OrderingCode Package Marking IPL60R125C7 PG-VSON-4 60C7125 Final Data Sheet 1 RelatedLinks see Appendix A Rev.2.0,2015-12-11 600VCoolMOSªC7PowerTransistor IPL60R125C7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.0,2015-12-11 600VCoolMOSªC7PowerTransistor IPL60R125C7 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 17 12 A TC=25°C TC=100°C - 66 A TC=25°C - - 78 mJ ID=4.4A; VDD=50V; see table 10 EAR - - 0.39 mJ ID=4.4A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 4.4 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 103 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Mounting torque - - - n.a. Ncm - IS - - 17 A TC=25°C Diode pulse current IS,pulse - - 66 A TC=25°C Reverse diode dv/dt3) dv/dt - - 20 V/ns VDS=0...400V,ISD<=6.7A,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 380 A/µs VDS=0...400V,ISD<=6.7A,Tj=25°C see table 8 Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive Continuous diode forward current 2) 1) Limited by Tj max. Pulse width tp limited by Tj,max 3) Identical low side and high side switch 2) Final Data Sheet 3 Rev.2.0,2015-12-11 600VCoolMOSªC7PowerTransistor IPL60R125C7 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 1.216 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint Thermal resistance, junction - ambient RthJA for SMD version - 35 45 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area °C/W for drain connection and cooling. PCB is vertical without air stream cooling. Tsold - - 260 °C Reflow soldering temperature Final Data Sheet 4 reflow MSL3 Rev.2.0,2015-12-11 600VCoolMOSªC7PowerTransistor IPL60R125C7 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.5 4 V VDS=VGS,ID=0.39mA - 10 1 - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.108 0.240 0.125 - Ω VGS=10V,ID=7.8A,Tj=25°C VGS=10V,ID=7.8A,Tj=150°C Gate resistance RG - 0.83 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 3 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 1500 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 27 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 50 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 515 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 9.6 - ns VDD=400V,VGS=13V,ID=7.8A, RG=5.3Ω;seetable9 Rise time tr - 4 - ns VDD=400V,VGS=13V,ID=7.8A, RG=5.3Ω;seetable9 Turn-off delay time td(off) - 45 - ns VDD=400V,VGS=13V,ID=7.8A, RG=5.3Ω;seetable9 Fall time tf - 4 - ns VDD=400V,VGS=13V,ID=7.8A, RG=5.3Ω;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 8 - nC VDD=400V,ID=7.8A,VGS=0to10V Gate to drain charge Qgd - 11 - nC VDD=400V,ID=7.8A,VGS=0to10V Gate charge total Qg - 34 - nC VDD=400V,ID=7.8A,VGS=0to10V Gate plateau voltage Vplateau - 5.0 - V VDD=400V,ID=7.8A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 5 Rev.2.0,2015-12-11 600VCoolMOSªC7PowerTransistor IPL60R125C7 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=7.8A,Tj=25°C 310 - ns VR=400V,IF=7.8A,diF/dt=100A/µs; see table 8 - 3.5 - µC VR=400V,IF=7.8A,diF/dt=100A/µs; see table 8 - 24 - A VR=400V,IF=7.8A,diF/dt=100A/µs; see table 8 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 6 Rev.2.0,2015-12-11 600VCoolMOSªC7PowerTransistor IPL60R125C7 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 120 100 µs 1 µs 1 ms 10 ms 100 10 µs 101 DC 80 ID[A] Ptot[W] 100 60 10-1 40 10-2 20 0 0 25 50 75 100 125 10-3 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 10 100 µs 10 µs 101 1 µs 1 ms 10 ms 101 DC 100 0.5 ID[A] ZthJC[K/W] 100 10-1 0.2 0.1 10-1 0.05 0.02 0.01 10-2 10-3 single pulse 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 7 Rev.2.0,2015-12-11 600VCoolMOSªC7PowerTransistor IPL60R125C7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 100 60 20 V 20 V 10 V 8V 90 10 V 8V 50 80 7V 7V 70 6V 40 ID[A] ID[A] 60 50 30 5.5 V 40 6V 20 30 5V 20 5.5 V 10 5V 10 4.5 V 4.5 V 0 0 5 10 15 0 20 0 5 10 VDS[V] 15 ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 0.50 5.5 V 6V 6.5 V 20 VDS[V] 0.30 7V 10 V 20 V 0.45 0.25 0.40 RDS(on)[Ω] RDS(on)[Ω] 0.20 0.35 98% typ 0.15 0.30 0.10 0.25 0.20 0 20 40 60 80 0.05 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=7.8A;VGS=10V 8 Rev.2.0,2015-12-11 600VCoolMOSªC7PowerTransistor IPL60R125C7 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 100 12 120 V 25 °C 90 10 80 70 400 V 8 VGS[V] ID[A] 60 50 150 °C 6 40 4 30 20 2 10 0 0 2 4 6 8 10 0 12 0 10 VGS[V] 20 30 40 50 125 150 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=7.8Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 80 70 60 101 125 °C 50 IF[A] EAS[mJ] 25 °C 40 30 100 20 10 10-1 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 0 25 50 VSD[V] 100 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=4.4A;VDD=50V 9 Rev.2.0,2015-12-11 600VCoolMOSªC7PowerTransistor IPL60R125C7 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 105 700 680 104 660 Ciss 10 620 C[pF] VBR(DSS)[V] 640 600 3 102 Coss 101 580 560 100 Crss 540 520 -60 -30 0 30 60 90 120 150 10-1 0 100 Tj[°C] 200 300 400 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy 4.0 3.5 3.0 Eoss[µJ] 2.5 2.0 1.5 1.0 0.5 0.0 0 100 200 300 400 VDS[V] Eoss=f(VDS) Final Data Sheet 10 Rev.2.0,2015-12-11 600VCoolMOSªC7PowerTransistor IPL60R125C7 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt IF QF IF dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 t 10 %Irrm QS Table9switchingtimes(ss) Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload(ss) Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 11 ID VDS Rev.2.0,2015-12-11 600VCoolMOSªC7PowerTransistor IPL60R125C7 6PackageOutlines Figure1OutlinePG-VSON-4,dimensionsinmm/inches Final Data Sheet 12 Rev.2.0,2015-12-11 600VCoolMOSªC7PowerTransistor IPL60R125C7 7AppendixA Table11RelatedLinks • IFXCoolMOSTMC7Webpage:www.infineon.com • IFXCoolMOSTMC7applicationnote:www.infineon.com • IFXCoolMOSTMC7simulationmodel:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 13 Rev.2.0,2015-12-11 600VCoolMOSªC7PowerTransistor IPL60R125C7 RevisionHistory IPL60R125C7 Revision:2015-12-11,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2015-12-11 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 14 Rev.2.0,2015-12-11