IPB60R600CP Data Sheet (273 KB, EN)

IPB60R600CP
CoolMOSTM Power Transistor
Product Summary
Features
• Lowest figure-of-merit R ON x Qg
• Ultra low gate charge
V DS @ Tj,max
650
V
R DS(on),max @ Tj =25°C
0.6
Ω
Q g,typ
21
nC
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
PG-TO263
• Pb-free lead plating; RoHS compliant
CoolMOS CP is designed for:
• Hard switching SMPS topologies
Type
Package
Marking
IPB60R600CP
PG-TO263
6R600P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
6.1
T C=100 °C
3.8
Pulsed drain current2)
I D,pulse
T C=25 °C
15
Avalanche energy, single pulse
E AS
I D=2.2 A, V DD=50 V
144
Avalanche energy, repetitive t AR2),3)
E AR
I D=2.2 A, V DD=50 V
0.2
Avalanche current, repetitive t AR2),3)
I AR
MOSFET dv /dt ruggedness
dv /dt
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Rev.2.0
Unit
A
mJ
2.2
A
V DS=0...480 V
50
V/ns
static
±20
V
AC (f >1 Hz)
±30
T C=25 °C
60
W
-55 ... 150
°C
page 1
2008-02-15
IPB60R600CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous diode forward current
IS
Diode pulse current 2)
I S,pulse
Reverse diode dv /dt 4)
dv /dt
Parameter
Symbol Conditions
Value
Unit
3.3
T C=25 °C
A
15
15
V/ns
Values
Unit
min.
typ.
max.
-
-
2.1
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ambient
R thJC
R thJA
leaded
-
-
62
R thJA
SMD version, device
on PCB, minimal
footprint
-
-
62
SMD version, device
on PCB, 6 cm2 cooling
area3)
-
35
-
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=220µA
2.5
3
3.5
Zero gate voltage drain current
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
-
-
1
V DS=600 V, V GS=0 V,
T j=150 °C
-
10
-
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=3.3 A,
T j=25 °C
-
0.54
0.6
Ω
V GS=10 V, I D=3.3 A,
T j=150 °C
-
1.5
-
f =1 MHz, open drain
-
1.5
-
Gate resistance
Rev.2.0
RG
page 2
Ω
2008-02-15
IPB60R600CP
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
550
-
-
28
-
-
26
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
related5)
C o(er)
Effective output capacitance, time
related6)
C o(tr)
-
67
-
Turn-on delay time
t d(on)
-
17
-
Rise time
tr
-
12
-
Turn-off delay time
t d(off)
-
75
-
Fall time
tf
-
17
-
Gate to source charge
Q gs
-
2
-
Gate to drain charge
Q gd
-
10
-
Gate charge total
Qg
-
21
27
Gate plateau voltage
V plateau
-
4.7
-
V
-
0.8
1.2
V
-
220
-
ns
-
2.3
-
µC
-
18
-
A
V GS=0 V, V DS=100 V,
f =1 MHz
pF
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=3.3 A,
R G=23.1 Ω
ns
Gate Charge Characteristics
V DD=480 V, I D=3.3 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
V GS=0 V, I F=3.3 A,
T j=25 °C
V R=400 V, I F=I S,
di F/dt =100 A/µs
1)
J-STD20 and JESD22
2)
Pulse width t p limited by T j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
ISD=ID, di/dt≤400A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
5)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev.2.0
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IPB60R600CP
1 Power dissipation
2 Safe operating area
P tot=f(T C)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
60
limited by on-state
resistance
50
1 µs
101
40
I D [A]
P tot [W]
10 µs
30
100 µs
1 ms
DC
100
20
10 ms
10
10-1
0
0
40
80
120
100
160
101
T C [°C]
102
103
V DS [V]
3 Max. transient thermal impedance
4 Typ. output characteristics
Z thJC=f(t P)
I D=f(V DS); T j=25 °C
parameter: D=t p/T
parameter: V GS
101
20
20 V
8V
10 V
7V
16
0.5
6V
100
12
I D [A]
Z thJC [K/W]
0.2
0.1
0.05
8
0.02
10
-1
5.5 V
0.01
5V
single pulse
4
4.5 V
10-2
10-5
0
10-4
10-3
10-2
10-1
Rev.2.0
0
5
10
15
20
V DS [V]
t p [s]
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IPB60R600CP
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C
R DS(on)=f(I D); T j=150 °C
parameter: V GS
parameter: V GS
12
2.8
8V
7V
10 V
10
7V
6V
6.5 V
5.5 V
20 V
2.4
6V
R DS(on) [Ω]
I D [A]
8
5V
6
4
5.5 V
2
20 V
5V
4.5 V
1.6
2
0
1.2
0
5
10
15
20
25
0
3
6
9
12
15
I D [A]
V DS [V]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T j); I D=3.3 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
1.8
24
1.6
20
C °25
1.4
16
I D [A]
R DS(on) [Ω]
1.2
1
12
C °150
0.8
98 %
8
typ
0.6
4
0.4
0.2
0
-60
-20
20
60
100
140
180
T j [°C]
Rev.2.0
0
2
4
6
8
10
V GS [V]
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IPB60R600CP
9 Typ. gate charge
10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=3.3 A pulsed
I F=f(V SD)
parameter: V DD
parameter: T j
102
10
8
120 V
150 °C, 98%
25 °C
150 °C
101
I F [A]
V GS [V]
6
480 V
4
100
25 °C, 98%
2
10-1
0
0
5
10
15
0
20
0.5
1
Q gate [nC]
1.5
2
V SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E AS=f(T j); I D=2.2 A; V DD=50 V
V BR(DSS)=f(T j); I D=0.25 mA
700
150
125
660
V BR(DSS) [V]
E AS [mJ]
100
75
620
50
580
25
540
0
20
60
100
140
180
T j [°C]
Rev.2.0
-60
-20
20
60
100
140
180
T j [°C]
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IPB60R600CP
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
5
104
4
10
3
Ciss
E oss [µJ]
C [pF]
3
102
2
Coss
101
1
Crss
100
0
0
100
200
300
400
500
V DS [V]
Rev.2.0
0
100
200
300
400
500
600
V DS [V]
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IPB60R600CP
Definition of diode switching characteristics
Rev.2.0
page 8
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IPB60R600CP
PG-TO263: Outlines
Dimensions in mm/inches
Rev.2.0
page 9
2008-02-15
IPB60R600CP
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
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on the types in question, please contact the nearest Infineon Technologies Office.
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the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
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intended to be implanted in the human body or to support and/or maintain and sustain
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or other persons may be endangered.
Rev.2.0
page 10
2008-02-15