VSK.F200..P Series Vishay High Power Products Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 200 A FEATURES • Fast turn-off thyristor • Fast recovery diode RoHS • High surge capability COMPLIANT • Electrically isolated baseplate • 3500 VRMS isolating voltage • Industrial standard package • Lead (Pb)-free • Designed and qualified for industrial level MAGN-A-PAKTM DESCRIPTION This series of MAGN-A-PAKTM modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required. PRODUCT SUMMARY IT(AV) 200 A MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IT(AV) TC IT(RMS) VALUES UNITS 200 A 85 °C 444 ITSM I2 t 50 Hz 7600 60 Hz 8000 50 Hz 290 60 Hz 265 I2√t 2900 tq 20/25 trr 2 VDRM/VRRM TJ Range A kA2s kA2√s µs up to 1200 V - 40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE AND OFF-STATE BLOCKING VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 08 800 800 12 1200 1200 VSK.F200- Document Number: 94422 Revision: 03-Jun-08 For technical questions, contact: [email protected] IRRM/IDRM AT TJ = 125 °C mA 50 www.vishay.com 1 VSK.F200..P Series Vishay High Power Products Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 200 A CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM 180° el ITM 100 µs 180° el 50 Hz 380 560 630 850 2460 3180 400 Hz 460 690 710 1060 1570 2080 2500 Hz 310 450 530 760 630 860 5000 Hz 250 360 410 560 410 560 10 000 Hz 180 280 300 410 - - Recovery voltage Vr 50 50 50 50 50 50 Voltage before turn-on Vd 80 % VDRM Rise of on-state current dI/dt 50 Case temperature 85 Equivalent values for RC circuit 80 % VDRM 50 - 60 85 10/0.47 UNITS 80 % VDRM - - 60 85 10/0.47 60 A V A/µs °C Ω/µF 10/0.47 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at case temperature IT(AV) Maximum RMS on-state current IT(RMS) TEST CONDITIONS 180° conduction, half sine wave As AC switch t = 10 ms Maximum peak, one-cycle non-repetitive on-state, surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I2√t VALUES UNITS 200 A 85 °C 444 7600 No voltage reapplied 100 % VRRM reapplied No voltage reapplied 8000 Sinusoidal half wave, initial TJ = 125 °C 100 % VRRM reapplied 6700 290 265 205 2900 VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.18 High level value of threshold voltage VT(TO)2 (I > π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.25 Low level value on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.74 High level value on-state slope resistance rt2 (I > π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.70 VTM Ipk = 600 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.73 Maximum holding current IH TJ = 25 °C, IT > 30 A 6000 Maximum latching current IL TJ = 25 °C, VA = 12 V, Ra = 6 Ω, Ig = 1A 1000 www.vishay.com 2 For technical questions, contact: [email protected] kA2s 187 t = 0.1 to 10 ms, no voltage reapplied Low level value or threshold voltage Maximum on-state voltage drop A 6400 kA2√s V mΩ V mA Document Number: 94422 Revision: 03-Jun-08 VSK.F200..P Series Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 200 A Vishay High Power Products SWITCHING PARAMETER Maximum non-repetitive rate of rise SYMBOL TEST CONDITIONS dI/dt Gate drive 20 V, 20 Ω, tr ≤ 1 ms, VD = 80 % VDRM, TJ = 25 °C Maximum recovery time trr ITM = 350 A, dI/dt = - 25 A/µs, VR = 50 V, TJ = 25 °C Maximum turn-off time tq ITM = 750 A; TJ = TJ maximum; dI/dt = - 25 A/µs; VR = 50 V; dV/dt = 400 V/µs linear to 80 % VDRM VALUES K J 800 UNITS A/µs 2 20 25 µs BLOCKING PARAMETER SYMBOL Maximum critical rate of rise of off-state voltage TEST CONDITIONS VALUES UNITS dV/dt TJ = 125 °C, exponential to 67 % VDRM 1000 V/µs RMS insulation voltage VINS 50 Hz, circuit to base, TJ = 25 °C, t = 1 s 3000 V Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = 125 °C, rated VDRM/VRRM applied 50 mA VALUES UNITS TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum peak average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak negative gate voltage -VGT Maximum DC gate current required to trigger IGT DC gate voltage required to trigger VGT DC gate current not to trigger IGD DC gate voltage not to trigger VGD TEST CONDITIONS f = 50 Hz, d% = 50 60 TJ = 125 °C, f = 50 Hz, d% = 50 10 TJ = 125 °C, tp ≤ 5 ms TJ = 25 °C, Vak 12 V, Ra = 6 TJ = 125 °C, rated VDRM applied W 10 A 5 V 200 mA 3 V 20 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction operating temperature range TJ - 40 to 125 Storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case per junction RthJC Maximum thermal resistance, case to heatsink per module RthC-hs MAP to heatsink busbar to MAP Document Number: 94422 Revision: 03-Jun-08 0.125 Mounting surface flat, smooth and greased 0.025 K/W Mounting torque ± 10 % Approximate weight DC operation °C A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Use of cable lugs is not recommended, busbar should be used and restrained during tightening. Threads must be lubricated with a compound. For technical questions, contact: [email protected] 4 to 6 (35 to 53) N·m (lbf · in) 500 g 17.8 oz. www.vishay.com 3 VSK.F200..P Series Vishay High Power Products Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 200 A ΔRthJC CONDUCTION CONDUCTIONS ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.009 0.006 120° 0.10 0.011 90° 0.014 0.015 60° 0.020 0.020 30° 0.32 0.033 UNITS K/W VSK.F200.. Series R thJC (DC) = 0.125 K/ W 120 110 Conduc tion Angle 100 90 30° 60° 80 90° 70 120° 180° 60 0 40 80 120 160 200 240 350 180° 120° 90° 60° 30° 300 250 200 RMS Limit 150 Conduc tion Angle 100 VSK.F200.. Series Per Junction TJ= 125°C 50 0 0 40 80 120 160 200 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 3 - On-State Power Loss Characteristics 130 VSK.F200.. Series R thJC (DC) = 0.125 K/ W 120 110 Conduction Period 100 90 30° 80 60° 90° 120° 70 180° DC 60 www.vishay.com 4 Maximum Average On-state Power Loss (W) 130 0 50 100 150 200 250 300 350 Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 500 DC 180° 120° 90° 60° 30° 450 400 350 300 250 200 RMS Limit Conduction Period 150 VSK.F200.. Series Per Junction TJ = 125°C 100 50 0 0 50 100 150 200 250 300 350 Average On-state Current (A) Average On-state Current (A) Fig. 2 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics For technical questions, contact: [email protected] Document Number: 94422 Revision: 03-Jun-08 VSK.F200..P Series 6000 5000 4000 VSK.F200.. Series Per Junction 3000 1 10 1 (K/ W) At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ= 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Vishay High Power Products Steady State Value: R thJC = 0.125 K/ W thJC 7000 (DC Operation) Transient Thermal Impedance Z Peak Half Sine Wave On-state Current (A) Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 200 A 0.1 0.01 VSK.F200.. Series Per Junc tion 0.001 0.001 100 Numb er Of Equa l Amplitude Half Cyc le Current Pulses (N) Ma ximum Non Rep etitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reap plied Rated VRRMReapplied 7000 6000 5000 4000 VSK.F200.. Series Per Junction 3000 0.01 0.1 1 10 100 320 ITM = 1000 A 500 A 300 A 200 A 100 A 300 280 260 240 220 200 180 160 140 120 VSK.F200.. Series TJ = 125°C 100 80 10 20 30 40 50 60 70 80 90 100 Pulse Train Duration (s) Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 9 - Reverse Recovery Charge Characteristics 10000 Instantaneous On-state Current (A) 1 Square Wave Pulse Duration (s) Maximum Reverse Recovery Charge - Qrr (µC) 8000 0.1 Fig. 8 - Thermal Impedance ZthJC Characteristics 1000 TJ= 25°C TJ= 125°C VSK.F200.. Series Per Junc tion 100 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Document Number: 94422 Revision: 03-Jun-08 Maximum Reverse Rec overy Current - Irr (A) Peak Half Sine Wave On-state Current (A) Fig. 5 - Maximum Non-Repetitive Surge Current 0.01 180 I TM = 1000A 500A 300A 200A 100A 150 120 90 60 30 10 VSK.F200.. Series TJ = 125°C 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 10 - Reverse Recovery Current Characteristics For technical questions, contact: [email protected] www.vishay.com 5 VSK.F200..P Series Vishay High Power Products Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 200 A Peak On-stata Current (A) 1E4 50 Hz 50 Hz 150 150 400 1000 1E3 400 2500 1000 2500 5000 5000 1E2 tp Snub ber c irc uit R s= 10 ohms C s = 0.47 µF V D = 80% V DRM VSK.F200.. Series Sinusoidal pulse TC = 85°C 1E1 1E1 1E2 1E1E 44 1E3 tp Snubber circuit R s= 10 ohms C s = 0.47 µF V D = 80% V DRM VSK.F200.. Series Sinusoidal pulse T C = 60°C 1E1 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics Peak On-state Current (A) 1E4 tp VSK.F200.. Series Trapezoid a l pulse TC= 85°C d i/d t 50A/ µs tp VSK.F200.. Series Trapezoidal pulse TC = 85°C di/ dt 100A/ µs 50 Hz 50 Hz 150 150 400 1E3 400 1000 1000 2500 2500 5000 5000 Snubber circ uit R s= 10 ohms C s = 0.47 µF V D = 80% V DRM 1E2 1E1 1E2 1E3 1E1E4 4 1E1 E1 Snubber circ uit R s= 10 ohms C s = 0.47 µF V D = 80% V DRM 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics Peak On-state Current (A) 1E4 50 Hz 50 Hz 150 150 400 400 1E3 1000 1000 2500 2500 5000 tp 1E2 1E1 5000 VSK.F200.. Series Trapezoidal pulse TC= 60°C di/ dt 50A/ µs 1E2 Snubber circ uit R s= 10 ohms C s = 0.47 µF V D = 80% V DRM 1E3 1E4 1E4 tp 1E1 E1 Snubber circ uit R s= 10 ohms C s = 0.47 µF V D = 80% V DRM VSK.F200.. Series Trapezoidal pulse TC= 60°C di/ dt 100A/ µs 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 94422 Revision: 03-Jun-08 VSK.F200..P Series Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 200 A Vishay High Power Products 1E4 Peak On-state Current (A) 10 joules per pulse 10 joules per pulse 5 2.5 5 2.5 1 1 0.5 1E3 0.5 0.25 0.25 0.1 0.1 0.05 0.05 1E2 tp 1E1 1E1 VSK.F200.. Series Sinusoidal pulse VSK.F200.. Series Trapezoidal pulse d i/ dt 50A/ µs tp 1E2 E1 1E1 1E4 1E4 1E3 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 14 - Maximum On-State Energy Power Loss Characteristics 10 Rectangular gate pulse a) Recommended load line for rated di/ dt : 10V, 10ohms b) Recommended load line for <=30% rated di/ dt : 10V, 20ohms (1) PGM = 8W, tp = 25ms (2) PGM = 20W, tp = 1ms (3) PGM = 40W, tp = 5ms (4) PGM = 80W, tp = 2.5ms (a) Tj=125 °C 1 Tj=-40 °C (b) Tj=25 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD VSK.F200.. Series 0.1 0.01 0.1 Frequenc y Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 15 - Gate Characteristics ORDERING INFORMATION TABLE Device code VSK T F 200 1 2 3 4 - 12 H K P 5 6 7 8 1 - Module type 2 - Circuit configuration 3 - Fast SCR 4 - Current rating: IT(AV) x 10 rounded 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - dV/dt code: H ≤ 400 V/µs 7 - tq code: K ≤ 20 µs J ≤ 25 µs 8 - Lead (Pb)-free Note • To order the optional hardware go to www.vishay.com/doc?95172 Document Number: 94422 Revision: 03-Jun-08 For technical questions, contact: [email protected] www.vishay.com 7 VSK.F200..P Series Vishay High Power Products Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 200 A CIRCUIT CONFIGURATION VSKHF... VSKTF... ~ ~ + + - K1G1 G2 K2 VSKLF... ~ ~ + + - K1G1 ~ + - VSKUF... ~ + - + - - VSKVF... + - - + + - VSKKF... - + + K1G1 G2 K2 K1G1 G2 K2 + - - VSKNF... + - - - + + + G2 K2 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 8 http://www.vishay.com/doc?95086 For technical questions, contact: [email protected] Document Number: 94422 Revision: 03-Jun-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1