This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3892 Silicon N-channel power MOSFET For contactless relay, diving circuit for a solenoid, driving circuit for a motor, control equipment and switching power supply Package Code TO-220D-A1 Pin Name 1: Gate 2: Drain 3: Source Features Absolute Maximum Ratings TC = 25°C Parameter Symbol Drain-source surrender voltage VDSS Gate-source surrender voltage VGSS Drain current ID Peak drain current IDP Avalanche energy capability * Drain power dissipation EAS PD Ta = 25°C Junction temperature Tj Storage temperature Tstg Note) *: L = 2.67 mH, IL = 22 A, VDD = 50 V, 1 pulse Rating Unit 200 V ±30 V 22 A 88 A 986 mJ 40 W 2.0 W 150 °C –55 to +150 °C Marking Symbol: K3892 Internal Connection D G S on tin ue Electrical Characteristics TC = 25°C±3°C di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. M Di ain sc te on na tin nc ue e/ d Gate-source surrender voltage VGSS : ± 30 guaranteed Avalanche energy capacity guaranteed: EAS > 986 mJ High-speed switching: tf = 39 ns Parameter Symbol ce /D Drain-source cutoff current en int Gate threshold voltage an Gate-source cutoff current Typ Max IDSS VDS = 160 V, VGS = 0 10 mA VGS = ±30 V, VDS = 0 ±1.0 mA 4.5 V 62 mW IGSS Vth VDS = 10 V, ID = 1.0 mA RDS(on) VGS = 10 V, ID = 11.0 A Forward transfer admittance Yfs VDS = 10 V, ID = 11.0 A 200 Unit ID = 1 mA, VGS = 0 Drain-source ON resistance Ma Min VDSS isc Drain-source surrender voltage Conditions 2.5 48 7 V 15 S 3 177 pF 456 pF Short-circuit input capacitance (Common source) Ciss Short-circuit output capacitance (Common source) Coss Reverse transfer capacitance (Common source) Crss 41 pF Turn-on delay time td(on) 54 ns 60 ns 194 ns 39 ns Rise time Turn-off delay time Fall time tr td(off) VDS = 25 V, VGS = 0, f = 1 MHz VDD = 100 V, ID = 11.0 A RL = 9.1 W, VGS = 10 V tf Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: January 2009 SJG00043BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SK3892 Electrical Characteristics (continued) TC = 25°C±3°C Parameter Symbol Diode forward voltage VDSF Reverse recovery time trr Reverse recovery charge Qrr Gate charge load Qg Gate-source charge Qgs Gate-drain charge Qgd Conditions Min Typ IDR = 22 A, VGS = 0 L = 230 mH, VDD = 100 V IDR = 11.0 A, di / dt = 100 A/ms VDD = 100 V, ID = 11.0 A, VGS = 10 V Max Unit -1.5 V 127 ns 756 nC 50 nC 12 nC 18 nC Rth(ch-c) 3.13 °C/W Thermal resistance (ch-a) Rth(ch-a) 62.5 °C/W M Di ain sc te on na tin nc ue e/ d Thermal resistance (ch-c) Ma int en an ce /D isc on tin ue di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2 SJG00043BED an en ue on tin isc ce /D 13.7 ±0.2 4.2 ±0.2 15.0 ±0.5 φ3.2 ±0.1 1.4 ±0.2 1.6 ±0.2 0.8 ±0.1 2.54 ±0.3 1 2 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. int Ma 3.0 ±0.5 M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). 2SK3892 TO-220D-A1 Unit: mm 4.6 ±0.2 9.9 ±0.3 SJG00043BED 2.9 ±0.2 2.6 ±0.1 0.40 ±0.05 5.08 ±0.5 3 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es ne ain ain foll htt visit d d te te ow p:/ fo d /w llo is isc nan nan ing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i / on . (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. Pl ea Ma int en an ce /D isc on tin ue 20080805