FG6943010R FG6943010R Silicon N-channel MOSFET(FET1) Unit: mm Silicon P-channel MOSFET(FET2) For switching Features y Low drive voltage: 2.5 V drive y Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) Marking Symbol: V7 Basic Part Number 1. Source(FET1) 2. Gate(FET1) 3. Drain(FET2) FJ330301 + FK330301 (Individual) 4. Source(FET2) 5. Gate(FET2) 6. Drain(FET1) Packaging FG6943010R Embossed type (Thermo-compression sealing): 8 000 pcs / reel (standard) SSMin6-F3-B SC-107C SOT-666 Panasonic JEITA Code Absolute Maximum Ratings Ta = 25 °C Internal Connection Parameter Drain-Source Voltage FET1 Gate-source Voltage (N-ch.) Drain Current Drain Current (Pulsed) Drain-source Voltage FET2 Gate-source Voltage (P-ch.) Drain Current Drain Current (Pulsed) Total Power Dissipation Overall Channel Temperature Storage Temperature Symbol Rating Unit VDS VGS ID IDp VDS VGS ID IDp PD Tch Tstg 30 ±12 100 200 -30 ±12 -100 -200 125 150 -55 to +150 V V mA mA V V mA mA mW °C °C 6 5 FET 1 FET 2 1 2 Ver. BED 3 Pin Name 1. Source(FET1) 2. Gate(FET1) 3. Drain(FET2) Publication date: September 2012 4 4. Source(FET2) 5. Gate(FET2) 6. Drain(FET1) 1 FG6943010R Electrical Characteristics Ta = 25 °C ± 3 °C FET1(N-ch.) Parameter Symbol Drain-source Breakdown Voltage Zero Gate Voltage Drain Current Gate-source Leakage Current Gate-source Threshold Voltage Drain-source On-state Resistance Forward transfer admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDSS IDSS IGSS Vth RDS(on)1 RDS(on)2 |Yfs| Ciss Coss Crss Turn-on Time *1 ton Turn-off Tme *1 toff Conditions ID = 1.0 mA, VGS = 0 V VDS = 30 V, VGS = 0 V VGS = ±10 V, VDS = 0 V ID = 1.0 μA, VDS = 3.0 V ID = 10 mA, VGS = 2.5 V ID = 10 mA, VGS = 4.0 V ID = 10 mA, VDS = 3.0 V Min Typ Max 30 0.5 20 VDS = 3 V, VGS = 0 V, f = 1 MHz VDD = 3 V, VGS = 0 to 3 V, ID = 10 mA VDD = 3 V, VGS = 3 to 0 V, ID = 10 mA 1.0 3 2 55 12 7 3 1.0 ±10 1.5 6 3 Unit V μA μA V Ω Ω mS pF pF pF 100 ns 100 ns Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 FET1 ton,toff measurement circuit Electrical Characteristics Ta = 25 °C ± 3 °C FET2(P-ch.) Parameter Symbol Drain-source Breakdown Voltage Zero Gate Voltage Drain Current Gate-source Leakage Current Gate-source Threshold Voltage Drain-source On-state Resistance Forward transfer admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDSS IDSS IGSS Vth RDS(on)1 RDS(on)2 |Yfs| Ciss Coss Crss Turn-on Time *2 ton Turn-off Tme *2 toff Conditions ID = -1.0 mA, VGS = 0 V VDS = -30 V, VGS = 0 V VGS = ±10 V, VDS = 0 V ID = -1.0 μA, VDS = -3.0 V ID = -10 mA, VGS = -2.5 V ID = -10 mA, VGS = -4.0 V ID = -10 mA, VDS = -3.0 V VDS = -3 V, VGS = 0 V, f = 1 MHz VDD = -3 V, VGS = 0 to -3 V, ID = -10 mA VDD = -3 V, VGS = -3 to 0 V, ID = -10 mA Min Typ Max -30 -0.5 20 -1.0 7 4 40 12 7 3 -1.0 ±10 -1.5 17 7 Unit V μA μA V Ω Ω mS pF pF pF 100 ns 100 ns Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *2 FET2 ton,toff measurement circuit Ver. BED 2 FG6943010R *1 FET1 ton,toff measurement circuit VDD = 3 V ID = 10 mA RL = 300 Ω Vout D Vin VGS=0～3 V G 50 Ω S 90 % Vin 10 % 90 % Vout 10 % ton toff Ver. BED 3 FG6943010R VDD = -3 V *2 FET2 ton,toff measurement circuit ID = -10 mA RL = 300 Ω Vout D Vin VGS=0～-3 V G 50 Ω S 10 % Vin 90 % 10 % Vout 90 % ton toff Ver. BED 4 FG6943010R FET1(N-ch.) 1.E+00 Drain Current ID (A) Drain Current ID (A) 0.1 VGS = 4.0 V 0.05 2.5 V 2.0 V 1.5 V Ta = 85 °C 1.E-02 25 °C 1.E-03 -30 °C 1.E-04 1.E-05 1.E-06 0 0 1.E-01 0.5 0 1 Drain-source Voltage VDS (V) ID - VDS 2 3 ID - VGS 0.3 10000 Drain-source On-State Resistance RDS(on) (Ω) Drain-source Voltage VDS (V) 1 Gate-source Voltage VGS (V) 10 mA 0.2 ID= 20 mA 0.1 5 mA 0 10 2.5 V 1 VGS = 4.0 V 1000 0.1 100 0 1 2 3 4 5 Gate to Source Voltage VGS(V) 0.001 0.01 0.1 Drain Current ID (A) VDS - VGS RDS(on) - ID Capacitance C (pF) 100 Ciss 10 Coss Crss 1 0.1 1 10 100 Drain-source Voltage VDS (V) Capacitance - VDS Ver. BED 5 FG6943010R FET1(N-ch.) Drain-source On-state Resistance RDS(on) (Ω) Gate-source Threshold Voltage Vth (V) 2 1.5 1 -50 0 50 100 150 3 2.5 V 2 VGS = 4.0 V 1 0 -50 0 Temperature Ta (°C) 50 100 150 Temperature Ta (°C) Vth - Ta RDS(on) - Ta Total Power Dissipation PD (W) 0.2 0.1 0 0 50 100 150 Temperature Ta (°C) PD - Ta 10 1 Drain current ID(A) Thermal Resistance Rth (°C/W) 1000 100 10 IDp = 0.2 A 10 ms 100 ms 0.01 Operation in this area is limited by RDS(on) 1s DC 0.001 1 0.001 1 ms 0.1 Ta = 25 °C, Glass epoxy board (25.4 × 25.4 × t0.8mm)coated with copper foil, which has more than 300 mm2. 0.01 0.1 1 10 100 0.0001 0.01 1000 Pulse Width tsw (s) 0.1 1 10 100 Drain-source Voltage VDS(V) Rth -tsw Safe Operating Area Ver. BED 6 FG6943010R FET2(P-ch.) -0.05 -0.1 Drain Current ID (A) Drain Current ID (A) VGS = -4.0 V -2.5 V -0.05 -1.5 V Ta = 85 °C -0.04 -0.03 25 °C -0.02 -0.01 -30 °C -2.0 V 0 0 -1 0 -0.2 -0.4 -0.6 -0.8 -3 Gate-source Voltage VGS (V) Drain-source Voltage VDS (V) ID - VDS ID - VGS 1000000 Drain-source On-state Resistance RDS(on) (Ω) -0.5 Drain-source Voltage VDS (V) -2 -1 -0.4 -0.3 ID= -20 mA -0.2 -5 mA -0.1 -10 mA 0 1000 100000 100 -2.5 V 10000 10 VGS = -4.0 V 1 1000 0.1 100 0 -1 -2 -3 -4 -5 -6 -0.001 -0.01 -0.1 Drain Current ID (A) Gate-source Voltage VGS (V) VDS - VGS RDS(on) - ID Capacitance C (pF) 100 Ciss 10 Coss Crss 1 -0.1 -1 -10 -100 Drain-source Voltage VDS (V) Capacitance - VDS Ver. BED 7 FG6943010R 2 Drain-source On-state Resistance RDS(on) (Ω) Gate-source Threshold Voltage Vth (V) FET2(P-ch.) 1.5 1 -50 0 50 100 150 12 10 -2.5 V 8 6 VGS = -4.0 V 4 2 0 -50 0 50 Temperature Ta (°C) 100 150 200 Temperature Ta (°C) Vth - Ta RDS(on) - Ta Total Power Dissipation PD (W) 0.2 0.1 0 0 50 100 150 Temperature Ta (°C) PD - Ta -10 Drain Current ID (A) Thermal Resistance Rth (°C/W) 1000 100 10 1 0.1 0.001 -1 IDp = -0.2 A 1 ms -0.1 10 ms 100 ms -0.01 Operation in this area is limited by RDS(on) -0.001 1s DC Ta = 25 °C, Glass epoxy board (25.4 × 25.4 × t0.8 mm)coated with copper foil, which has more than 300 mm2. 0.01 0.1 1 10 100 -0.0001 -0.01 1000 Pulse Width tsw (s) -0.1 -1 -10 -100 Drain-source Voltage VDS (V) Rth -tsw Safe Operating Area Ver. BED 8 FG6943010R SSMin6-F3-B Unit: mm Land Pattern (Reference) (Unit: mm) Ver. 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