SPI11N60S5

SPP11N60S5
SPI11N60S5
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
VDS
600
V
RDS(on)
0.38
Ω
ID
11
A
PG-TO262
• Periodic avalanche rated
PG-TO220
• Extreme dv/dt rated
2
• Ultra low effective capacitances
1
• Improved transconductance
23
P-TO220-3-1
Type
Package
Ordering Code
SPP11N60S5
PG-TO220
Q67040-S4198
Marking
11N60S5
SPI11N60S5
PG-TO262
Q67040-S4338
11N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
Value
Unit
A
TC = 25 °C
11
TC = 100 °C
7
Pulsed drain current, tp limited by Tjmax
I D puls
22
Avalanche energy, single pulse
EAS
340
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
0.6
mJ
I D = 5.5 A, VDD = 50 V
I D = 11 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR
Gate source voltage
VGS
11
A
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation, T C = 25°C
Ptot
125
W
Operating and storage temperature
T j , T stg
-55... +150
°C
Rev. 2.6
Page 1
2007-08-30
SPP11N60S5
SPI11N60S5
Maximum Ratings
Parameter
Symbol
Drain Source voltage slope
dv/dt
Value
Unit
20
V/ns
Values
Unit
V DS = 480 V, ID = 11 A, Tj = 125 °C
Thermal Characteristics
Symbol
Parameter
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
1
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
SMD version, device on PCB:
RthJA
@ min. footprint
-
-
62
@ 6 cm2 cooling area 2)
-
35
-
-
-
260
Soldering temperature, wavesoldering
Tsold
K/W
°C
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA
Drain-Source avalanche
V(BR)DS V GS=0V, ID=11A
Values
Unit
min.
typ.
max.
600
-
-
-
700
-
3.5
4.5
5.5
V
breakdown voltage
Gate threshold voltage
VGS(th)
ID=500µΑ, VGS=V DS
Zero gate voltage drain current
I DSS
V DS=600V, VGS=0V,
Gate-source leakage current
I GSS
Drain-source on-state resistance RDS(on)
Gate input resistance
Rev. 2.6
RG
µA
Tj=25°C,
-
-
25
Tj=150°C
-
-
250
V GS=20V, VDS=0V
-
-
100
Ω
V GS=10V, ID=7A,
Tj=25°C
-
0.34
0.38
Tj=150°C
-
0.92
-
f=1MHz, open Drain
-
29
-
Page 2
nA
2007-08-30
SPP11N60S5
SPI11N60S5
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
-
6
-
S
pF
Characteristics
Transconductance
g fs
V DS≥2*I D*RDS(on)max,
ID=7A
Input capacitance
Ciss
V GS=0V, V DS=25V,
-
1460
-
Output capacitance
Coss
f=1MHz
-
610
-
Reverse transfer capacitance
Crss
-
21
-
-
45
-
-
85
-
Effective output capacitance,3) Co(er)
energy related
V GS=0V,
V DS=0V to 480V
Effective output capacitance,4) Co(tr)
time related
Turn-on delay time
t d(on)
V DD=350V, V GS=0/10V,
-
130
-
Rise time
tr
ID=11A, R G=6.8Ω
-
35
-
Turn-off delay time
t d(off)
-
150
225
Fall time
tf
-
20
30
-
10.5
-
-
24
-
-
41.5
54
-
8
-
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
pF
VDD=350V, ID=11A
VDD=350V, ID=11A,
ns
nC
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=350V, ID=11A
V
1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f.
AV
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3C
is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V
o(er)
DSS.
4C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Rev. 2.6
Page 3
2007-08-30
SPP11N60S5
SPI11N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Parameter
Inverse diode continuous
IS
Conditions
TC=25°C
Values
Unit
min.
typ.
max.
-
-
11
-
-
22
A
forward current
Inverse diode direct current,
ISM
pulsed
Inverse diode forward voltage
VSD
VGS=0V, IF=IS
-
1
1.2
V
Reverse recovery time
trr
VR=350V, IF =IS ,
-
650
1105
ns
Reverse recovery charge
Qrr
diF/dt=100A/µs
-
7.9
-
µC
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
typ.
Unit
typ.
Thermal resistance
Thermal capacitance
R th1
0.015
R th2
Cth1
0.0001878
0.03
Cth2
0.0007106
R th3
0.056
Cth3
0.000988
R th4
0.197
Cth4
0.002791
R th5
0.216
Cth5
0.007285
R th6
0.083
Cth6
0.063
Tj
K/W
R th1
R th,n
T case
Ws/K
E xternal H eatsink
P tot (t)
C th1
C th2
C th,n
T am b
Rev. 2.6
Page 4
2007-08-30
SPP11N60S5
SPI11N60S5
1 Power dissipation
2 Safe operating area
Ptot = f (TC)
ID = f ( V DS )
parameter : D = 0 , T C=25°C
140
10 2
SPP11N60S5
W
A
120
110
10 1
90
ID
Ptot
100
80
10 0
70
60
50
40
10 -1
30
20
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10
0
0
20
40
60
80
100
120
°C
10 -2 0
10
160
10
1
10
2
10
V
VDS
TC
3 Transient thermal impedance
4 Typ. output characteristic
ZthJC = f (t p)
ID = f (VDS); Tj=25°C
parameter: D = tp/T
parameter: tp = 10 µs, VGS
10
1
35
20V
12V
10V
K/W
A
25
ID
ZthJC
10 0
10 -1
9V
20
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -2
10 -3
15
8V
10
7V
5
6V
10 -4 -7
10
Rev. 2.6
10
-6
10
-5
10
-4
10
-3
s
tp
10
-1
Page 5
0
0
5
10
15
VDS
25
V
2007-08-30
3
SPP11N60S5
SPI11N60S5
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS); Tj=150°C
RDS(on)=f(ID)
parameter: tp = 10 µs, VGS
parameter: Tj=150°C, V GS
2
18
20V
12V
10V
A
9V
mΩ
RDS(on)
14
ID
8V
12
10
20V
12V
10V
9V
8V
7V
6V
1
8
7V
6
0.5
4
6V
2
0
0
5
10
V
15
0
0
25
2
4
6
8
10
12
14
VDS
A
ID
7 Drain-source on-state resistance
8 Typ. transfer characteristics
RDS(on) = f (Tj)
ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max
parameter : ID = 7 A, VGS = 10 V
parameter: tp = 10 µs
2.1
SPP11N60S5
18
32
Ω
A
1.6
24
1.4
ID
RDS(on)
1.8
20
1.2
16
1
0.8
12
0.6
8
98%
0.4
typ
4
0.2
0
-60
-20
20
60
100
°C
180
0
0
4
8
12
V
20
VGS
Tj
Rev. 2.6
25 °C
150 °C
Page 6
2007-08-30
SPP11N60S5
SPI11N60S5
9 Typ. gate charge
10 Forward characteristics of body diode
VGS = f (QGate)
IF = f (VSD)
parameter: ID = 11 A pulsed
parameter: Tj , tp = 10 µs
16
10 2
SPP11N60S5
V
SPP11N60S5
A
0.2 VDS max
10 1
10
IF
VGS
12 0.8 VDS max
8
6
10 0
Tj = 25 °C typ
4
Tj = 150 °C typ
Tj = 25 °C (98%)
2
0
0
Tj = 150 °C (98%)
10
20
30
40
50
nC
10 -1
0
65
0.4
0.8
1.2
1.6
2.4 V
2
QGate
3
VSD
11 Avalanche SOA
12 Avalanche energy
IAR = f (tAR)
EAS = f (Tj)
par.: Tj ≤ 150 °C
par.: ID = 5.5 A, V DD = 50 V
350
11
A
mJ
9
250
EAS
IAR
8
7
200
6
5
Tj (START) =25°C
150
4
3
100
Tj (START) =125°C
2
50
1
0 -3
10
Rev. 2.6
10
-2
10
-1
10
0
10
1
10
2
4
µs 10
tAR
Page 7
0
20
40
60
80
100
120
°C
160
Tj
2007-08-30
SPP11N60S5
SPI11N60S5
13 Drain-source breakdown voltage
14 Avalanche power losses
V(BR)DSS = f (Tj)
PAR = f (f )
parameter: E AR=0.6mJ
720
SPP11N60S5
300
V
680
PAR
V(BR)DSS
W
660
200
640
150
620
100
600
580
50
560
540
-60
-20
20
60
100
°C
0 4
10
180
10
5
Hz
Tj
10
f
15 Typ. capacitances
16 Typ. Coss stored energy
C = f (VDS)
Eoss=f(VDS)
parameter: V GS=0V, f=1 MHz
10 4
7.5
µJ
pF
Ciss
6
10 3
C
Eoss
5.5
5
4.5
4
10 2
Coss
3.5
3
2.5
10
1
2
Crss
1.5
1
0.5
10 0
0
100
200
300
400
V
600
VDS
Rev. 2.6
0
0
100
200
300
400
V
600
VDS
Page 8
2007-08-30
6
SPP11N60S5
SPI11N60S5
Definition of diodes switching characteristics
Rev. 2.6
Page 9
2007-08-30
SPP11N60S5
SPI11N60S5
PG-TO220-3-1, PG-TO220-3-21
Rev. 2.6
Page 10
2007-08-30
SPP11N60S5
SPI11N60S5
PG-TO262-3-1, PG-TO262-3-21 (I²-PAK)
Rev. 2.6
Page 11
2007-08-30
SPP11N60S5
SPI11N60S5
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev. 2.6
Page 12
2007-08-30