SPW11N60C3 Final data Cool MOS™ Power Transistor Feature VDS @ Tjmax 650 V RDS(on) 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance Type Package Ordering Code Marking SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 11 TC = 100 °C 7 Pulsed drain current, tp limited by Tjmax I D puls 33 Avalanche energy, single pulse EAS 340 Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.6 mJ I D = 5.5 A, VDD = 50 V I D = 11 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Reverse diode dv/dt dv/dt 11 A 6 V/ns IS=11A, VDS=480V, T j=125°C V Gate source voltage static VGS ±20 Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 125 W Operating and storage temperature T j , T stg -55... +150 °C Page 1 2003-09-17 SPW11N60C3 Final data Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 480 V, I D = 11 A, Tj = 125 °C Thermal Characteristics Parameter Symbol min. typ. max. Thermal resistance, junction - case RthJC - - 1 Thermal resistance, junction - ambient, leaded RthJA - - 62 Soldering temperature, Tsold - - 260 K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=11A Values Unit min. typ. max. 600 - - - 700 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=500µΑ, VGS=VDS Zero gate voltage drain current I DSS V DS=600V, VGS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance RG µA Tj=25°C, - - 25 Tj=150°C - - 250 V GS=30V, VDS=0V - - 100 Ω V GS=10V, ID=7A, Tj=25°C - 0.34 0.38 Tj=150°C - 0.92 - f=1MHz, open Drain - 0.86 - Page 2 nA 2003-09-17 SPW11N60C3 Final data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Symbol g fs Conditions V DS≥2*I D*RDS(on)max, Values Unit min. typ. max. - 8.3 - S pF ID=7A Input capacitance Ciss V GS=0V, V DS=25V, - 1200 - Output capacitance Coss f=1MHz - 390 - Reverse transfer capacitance Crss - 30 - - 45 - - 85 - Effective output capacitance, 2) Co(er) V GS=0V, energy related V DS=0V to 480V Effective output capacitance, 3) Co(tr) pF time related Turn-on delay time td(on) V DD=380V, V GS=0/10V, - 10 - Rise time tr ID=11A, RG =6.8Ω - 5 - Turn-off delay time td(off) - 44 70 Fall time tf - 5 9 - 5.5 - - 22 - - 45 60 - 5.5 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg V DD=480V, ID=11A V DD=480V, ID=11A, nC V GS=0 to 10V Gate plateau voltage V(plateau) V DD=480V, ID=11A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Page 3 2003-09-17 SPW11N60C3 Final data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Inverse diode continuous IS Conditions TC=25°C Values Unit min. typ. max. - - 11 - - 33 A forward current Inverse diode direct current, I SM pulsed Inverse diode forward voltage VSD VGS =0V, I F=IS - 1 1.2 V Reverse recovery time t rr VR =480V, IF=IS , - 400 600 ns Reverse recovery charge Q rr diF/dt=100A/µs - 6 - µC Peak reverse recovery current I rrm - 41 - A Peak rate of fall of reverse di rr/dt - 1200 - A/µs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance Rth1 0.015 Rth2 Cth1 0.0001878 0.03 Cth2 0.0007106 Rth3 0.056 Cth3 0.000988 Rth4 0.197 Cth4 0.002791 Rth5 0.216 Cth5 0.007285 Rth6 0.083 Cth6 0.063 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Page 4 2003-09-17 SPW11N60C3 Final data 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( V DS ) parameter : D = 0 , T C=25°C 140 10 2 SPW11N60C3 W A 120 110 10 1 90 ID Ptot 100 80 10 0 70 60 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 50 40 10 -1 30 20 10 0 0 20 40 60 80 100 120 °C 10 -2 0 10 160 10 1 10 2 10 V VDS TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) ID = f (VDS); Tj=25°C parameter: D = tp/T parameter: tp = 10 µs, VGS 10 1 40 K/W 10 0 7V 32 28 ID ZthJC 20V 10V 8V A 10 -1 6,5V 24 20 6V D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 10 -3 16 5,5V 12 8 5V 4,5V 4 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 Page 5 0 0 3 6 9 12 15 18 21 27 V VDS 2003-09-17 3 SPW11N60C3 Final data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=150°C RDS(on)=f(ID) parameter: tp = 10 µs, VGS parameter: Tj=150°C, V GS 2 22 20V 8V 7V 7.5V A 16 ID 4.5V 4V 6V RDS(on) 18 Ω 14 5V 6V 5.5V 1.6 1.4 5.5V 12 1.2 10 5V 8 6 1 4.5V 0.8 4V 0.6 4 2 0 0 5 10 V 15 0.4 0 25 6.5V 8V 20V 2 4 6 8 10 12 14 16 VDS A 20 ID 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter : ID = 7 A, VGS = 10 V parameter: tp = 10 µs 2.1 SPW11N60C3 40 Ω A 25°C 1.8 28 1.4 ID RDS(on) 32 1.6 1.2 24 150°C 20 1 16 0.8 12 0.6 98% 0.4 8 typ 4 0.2 0 -60 -20 20 60 100 °C 180 Tj Page 6 0 0 2 4 6 8 10 12 V 15 VGS 2003-09-17 SPW11N60C3 Final data 9 Typ. gate charge 10 Forward characteristics of body diode VGS = f (QGate ) IF = f (VSD) parameter: ID = 11 A pulsed parameter: Tj , tp = 10 µs 16 10 2 SPW11N60C3 V SPW11N60C3 A 10 1 0.2 VDS max 10 IF VGS 12 0.8 VDS max 8 6 10 0 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 0 0 Tj = 150 °C (98%) 10 20 30 40 50 nC 10 -1 0 70 0.4 0.8 1.2 1.6 2.4 V 2 QGate 3 VSD 11 Typ. drain current slope 12 Typ. switching time di/dt = f(R G), inductive load, Tj = 125°C t = f (RG ), inductive load, T j=125°C par.: VDS =380V, VGS=0/+13V, ID=11A par.: V DS=380V, VGS=0/+13V, ID=11 A 350 3000 ns A/µs t di/dt 250 2000 200 td(off) td(on) tr tf 1500 150 1000 100 di/dt(off) 500 0 0 di/dt(on) 20 40 60 50 80 Ω 120 RG 0 0 10 20 30 40 50 Ω 70 RG Page 7 2003-09-17 SPW11N60C3 Final data 13 Typ. switching time 14 Typ. drain source voltage slope t = f (ID), inductive load, T j=125°C dv/dt = f(RG), inductive load, Tj = 125°C par.: VDS =380V, VGS=0/+13V, RG =6.8Ω par.: V DS=380V, VGS=0/+13V, ID=11A 70 130000 60 110000 V/ns ns td(off) 55 100000 dv/dt 50 t 45 40 90000 80000 70000 35 60000 30 50000 25 20 40000 tf 15 dv/dt(off) 30000 td(on) 20000 10 5 tr 0 0 2 dv/dt(on) 10000 4 6 8 A 0 0 12 10 20 30 40 50 ID Ω 70 RG 15 Typ. switching losses 16 Typ. switching losses E = f (ID), inductive load, Tj=125°C E = f(RG), inductive load, Tj=125°C par.: VDS =380V, VGS=0/+13V, RG =6.8Ω par.: V DS=380V, VGS=0/+13V, ID=11A 0.04 mWs 0.24 *) Eon includes SPD06S60 diode commutation losses *) Eon includes SPD06S60 diode commutation losses mWs 0.03 Eoff E E 0.16 0.025 0.02 0.12 0.015 0.08 Eon* 0.01 Eon* 0.04 0.005 Eoff 0 0 2 4 6 8 A 12 ID 0 0 10 20 30 40 50 Ω 70 RG Page 8 2003-09-17 SPW11N60C3 Final data 17 Avalanche SOA 18 Avalanche energy IAR = f (tAR) EAS = f (Tj) par.: Tj ≤ 150 °C par.: ID = 5.5 A, V DD = 50 V 350 11 A mJ 9 250 EAS IAR 8 7 200 6 5 Tj (START) =25°C 150 4 3 100 Tj (START) =125°C 2 50 1 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 0 20 4 µs 10 tAR 40 60 80 100 120 °C 160 Tj 19 Drain-source breakdown voltage 20 Avalanche power losses V(BR)DSS = f (Tj) PAR = f (f ) parameter: E AR=0.6mJ 720 SPW11N60C3 300 V 680 PAR V(BR)DSS W 660 200 640 150 620 100 600 580 50 560 540 -60 -20 20 60 100 °C 180 Tj 0 4 10 10 5 Hz 10 f Page 9 2003-09-17 6 SPW11N60C3 Final data 21 Typ. capacitances 22 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS) parameter: V GS=0V, f=1 MHz 10 4 7.5 µJ pF Ciss 6 10 3 C Eoss 5.5 5 4.5 4 10 2 Coss 3.5 3 2.5 10 1 2 Crss 1.5 1 0.5 10 0 0 100 200 300 400 V 600 VDS 0 0 100 200 300 400 V 600 VDS Definition of diodes switching characteristics Page 10 2003-09-17 SPW11N60C3 Final data P-TO-247-3-1 15.9 5.03 20˚ 5˚ D 5.94 4.37 2.03 6.17 20.9 9.91 6.35 ø3.61 7 1.75 41.22 2.97 x 0.127 16 D 1.14 0.243 1.2 0.762 MAX. 2 2.4 +0.05 2.92 5.46 General tolerance unless otherwise specified: Leadframe parts: ±0.05 Package parts: ±0.12 Page 11 2003-09-17 Final data SPW11N60C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. 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