SPB11N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS(on) 0.38 Ω ID 11 A PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type Package Ordering Code SPB11N60S5 PG-TO263 Q67040-S4199 Marking 11N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 11 TC = 100 °C 7 Pulsed drain current, tp limited by Tjmax I D puls 22 Avalanche energy, single pulse EAS 340 Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.6 mJ I D = 5.5 A, VDD = 50 V I D = 11 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS 11 A ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, T C = 25°C Ptot 125 W Operating and storage temperature T j , T stg -55... +150 °C Rev. 2.3 Page 1 2005-07-22 SPB11N60S5 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 20 V/ns Values Unit V DS = 480 V, ID = 11 A, Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 1 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm2 cooling area 2) - 35 - - - 260 Soldering temperature, reflow soldering, MSL1 Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=11A Values Unit min. typ. max. 600 - - - 700 - 3.5 4.5 5.5 V breakdown voltage Gate threshold voltage VGS(th) ID=500µΑ, VGS=V DS Zero gate voltage drain current I DSS V DS=600V, VGS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 2.3 RG µA Tj=25°C, - - 25 Tj=150°C - - 250 V GS=20V, VDS=0V - - 100 Ω V GS=10V, ID=7A, Tj=25°C - 0.34 0.38 Tj=150°C - 0.92 - f=1MHz, open Drain - 29 - Page 2 nA 2005-07-22 SPB11N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 6 - S pF Characteristics Transconductance g fs V DS≥2*I D*RDS(on)max, ID=7A Input capacitance Ciss V GS=0V, V DS=25V, - 1460 - Output capacitance Coss f=1MHz - 610 - Reverse transfer capacitance Crss - 21 - - 45 - - 85 - Effective output capacitance,3) Co(er) energy related V GS=0V, V DS=0V to 480V Effective output capacitance,4) Co(tr) time related Turn-on delay time t d(on) V DD=350V, V GS=0/10V, - 130 - Rise time tr ID=11A, R G=6.8Ω - 35 - Turn-off delay time t d(off) - 150 225 Fall time tf - 20 30 - 10.5 - - 24 - - 41.5 54 - 8 - Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg pF VDD=350V, ID=11A VDD=350V, ID=11A, ns nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=350V, ID=11A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3C is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V o(er) DSS. 4C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Rev. 2.3 Page 3 2005-07-22 SPB11N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Inverse diode continuous IS Conditions TC=25°C Values Unit min. typ. max. - - 11 - - 22 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=350V, IF =IS , - 650 1105 ns Reverse recovery charge Qrr diF/dt=100A/µs - 7.9 - µC Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance R th1 0.015 R th2 Cth1 0.0001878 0.03 Cth2 0.0007106 R th3 0.056 Cth3 0.000988 R th4 0.197 Cth4 0.002791 R th5 0.216 Cth5 0.007285 R th6 0.083 Cth6 0.063 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.3 Page 4 2005-07-22 SPB11N60S5 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( V DS ) parameter : D = 0 , T C=25°C 140 10 2 SPP11N60S5 W A 120 110 10 1 90 ID Ptot 100 80 10 0 70 60 50 40 10 -1 30 20 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 0 0 20 40 60 80 100 120 °C 10 -2 0 10 160 10 1 10 2 10 V VDS TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) ID = f (VDS); Tj=25°C parameter: D = tp/T parameter: tp = 10 µs, VGS 10 1 35 20V 12V 10V K/W A 25 ID ZthJC 10 0 10 -1 9V 20 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 10 -3 15 8V 10 7V 5 6V 10 -4 -7 10 Rev. 2.3 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 Page 5 0 0 5 10 15 VDS 25 V 2005-07-22 3 SPB11N60S5 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=150°C RDS(on)=f(ID) parameter: tp = 10 µs, VGS parameter: Tj=150°C, V GS 2 18 20V 12V 10V A 9V mΩ RDS(on) 14 ID 8V 12 10 20V 12V 10V 9V 8V 7V 6V 1 8 7V 6 0.5 4 6V 2 0 0 5 10 V 15 0 0 25 2 4 6 8 10 12 14 VDS A ID 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter : ID = 7 A, VGS = 10 V parameter: tp = 10 µs 2.1 SPP11N60S5 18 32 Ω A 1.6 24 1.4 ID RDS(on) 1.8 20 1.2 16 1 0.8 12 0.6 8 98% 0.4 typ 4 0.2 0 -60 -20 20 60 100 °C 180 0 0 4 8 12 V 20 VGS Tj Rev. 2.3 25 °C 150 °C Page 6 2005-07-22 SPB11N60S5 9 Typ. gate charge 10 Forward characteristics of body diode VGS = f (QGate) IF = f (VSD) parameter: ID = 11 A pulsed parameter: Tj , tp = 10 µs 16 10 2 SPP11N60S5 V SPP11N60S5 A 0.2 VDS max 10 1 10 IF VGS 12 0.8 VDS max 8 6 10 0 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 0 0 Tj = 150 °C (98%) 10 20 30 40 50 nC 10 -1 0 65 0.4 0.8 1.2 1.6 2.4 V 2 QGate 3 VSD 11 Avalanche SOA 12 Avalanche energy IAR = f (tAR) EAS = f (Tj) par.: Tj ≤ 150 °C par.: ID = 5.5 A, V DD = 50 V 350 11 A mJ 9 250 EAS IAR 8 7 200 6 5 Tj (START) =25°C 150 4 3 100 Tj (START) =125°C 2 50 1 0 -3 10 Rev. 2.3 10 -2 10 -1 10 0 10 1 10 2 4 µs 10 tAR Page 7 0 20 40 60 80 100 120 °C 160 Tj 2005-07-22 SPB11N60S5 13 Drain-source breakdown voltage 14 Avalanche power losses V(BR)DSS = f (Tj) PAR = f (f ) parameter: E AR=0.6mJ 720 SPP11N60S5 300 V 680 PAR V(BR)DSS W 660 200 640 150 620 100 600 580 50 560 540 -60 -20 20 60 100 °C 0 4 10 180 10 5 Hz Tj 10 f 15 Typ. capacitances 16 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS) parameter: V GS=0V, f=1 MHz 10 4 7.5 µJ pF Ciss 6 10 3 C Eoss 5.5 5 4.5 4 10 2 Coss 3.5 3 2.5 10 1 2 Crss 1.5 1 0.5 10 0 0 100 200 300 400 V 600 VDS Rev. 2.3 0 0 100 200 300 400 V 600 VDS Page 8 2005-07-22 6 SPB11N60S5 Definition of diodes switching characteristics Rev. 2.3 Page 9 2005-07-22 SPB11N60S5 PG-TO263-3-2, PG-TO263-3-5, PG-TO263-3-22 Rev. 2.3 Page 10 2005-07-22 SPB11N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 Page 11 2005-07-22