SPB11N60S5 Data Sheet (686 KB, EN)

SPB11N60S5
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
VDS
600
V
RDS(on)
0.38
Ω
ID
11
A
PG-TO263
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type
Package
Ordering Code
SPB11N60S5
PG-TO263
Q67040-S4199
Marking
11N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
Value
Unit
A
TC = 25 °C
11
TC = 100 °C
7
Pulsed drain current, tp limited by Tjmax
I D puls
22
Avalanche energy, single pulse
EAS
340
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
0.6
mJ
I D = 5.5 A, VDD = 50 V
I D = 11 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR
Gate source voltage
VGS
11
A
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation, T C = 25°C
Ptot
125
W
Operating and storage temperature
T j , T stg
-55... +150
°C
Rev. 2.3
Page 1
2005-07-22
SPB11N60S5
Maximum Ratings
Parameter
Symbol
Drain Source voltage slope
dv/dt
Value
Unit
20
V/ns
Values
Unit
V DS = 480 V, ID = 11 A, Tj = 125 °C
Thermal Characteristics
Symbol
Parameter
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
1
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
SMD version, device on PCB:
RthJA
@ min. footprint
-
-
62
@ 6 cm2 cooling area 2)
-
35
-
-
-
260
Soldering temperature, reflow soldering, MSL1
Tsold
K/W
°C
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA
Drain-Source avalanche
V(BR)DS V GS=0V, ID=11A
Values
Unit
min.
typ.
max.
600
-
-
-
700
-
3.5
4.5
5.5
V
breakdown voltage
Gate threshold voltage
VGS(th)
ID=500µΑ, VGS=V DS
Zero gate voltage drain current
I DSS
V DS=600V, VGS=0V,
Gate-source leakage current
I GSS
Drain-source on-state resistance RDS(on)
Gate input resistance
Rev. 2.3
RG
µA
Tj=25°C,
-
-
25
Tj=150°C
-
-
250
V GS=20V, VDS=0V
-
-
100
Ω
V GS=10V, ID=7A,
Tj=25°C
-
0.34
0.38
Tj=150°C
-
0.92
-
f=1MHz, open Drain
-
29
-
Page 2
nA
2005-07-22
SPB11N60S5
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
-
6
-
S
pF
Characteristics
Transconductance
g fs
V DS≥2*I D*RDS(on)max,
ID=7A
Input capacitance
Ciss
V GS=0V, V DS=25V,
-
1460
-
Output capacitance
Coss
f=1MHz
-
610
-
Reverse transfer capacitance
Crss
-
21
-
-
45
-
-
85
-
Effective output capacitance,3) Co(er)
energy related
V GS=0V,
V DS=0V to 480V
Effective output capacitance,4) Co(tr)
time related
Turn-on delay time
t d(on)
V DD=350V, V GS=0/10V,
-
130
-
Rise time
tr
ID=11A, R G=6.8Ω
-
35
-
Turn-off delay time
t d(off)
-
150
225
Fall time
tf
-
20
30
-
10.5
-
-
24
-
-
41.5
54
-
8
-
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
pF
VDD=350V, ID=11A
VDD=350V, ID=11A,
ns
nC
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=350V, ID=11A
V
1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f.
AV
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3C
is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V
o(er)
DSS.
4C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Rev. 2.3
Page 3
2005-07-22
SPB11N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Parameter
Inverse diode continuous
IS
Conditions
TC=25°C
Values
Unit
min.
typ.
max.
-
-
11
-
-
22
A
forward current
Inverse diode direct current,
ISM
pulsed
Inverse diode forward voltage
VSD
VGS=0V, IF=IS
-
1
1.2
V
Reverse recovery time
trr
VR=350V, IF =IS ,
-
650
1105
ns
Reverse recovery charge
Qrr
diF/dt=100A/µs
-
7.9
-
µC
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
typ.
Unit
typ.
Thermal resistance
Thermal capacitance
R th1
0.015
R th2
Cth1
0.0001878
0.03
Cth2
0.0007106
R th3
0.056
Cth3
0.000988
R th4
0.197
Cth4
0.002791
R th5
0.216
Cth5
0.007285
R th6
0.083
Cth6
0.063
Tj
K/W
R th1
R th,n
T case
Ws/K
E xternal H eatsink
P tot (t)
C th1
C th2
C th,n
T am b
Rev. 2.3
Page 4
2005-07-22
SPB11N60S5
1 Power dissipation
2 Safe operating area
Ptot = f (TC)
ID = f ( V DS )
parameter : D = 0 , T C=25°C
140
10 2
SPP11N60S5
W
A
120
110
10 1
90
ID
Ptot
100
80
10 0
70
60
50
40
10 -1
30
20
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10
0
0
20
40
60
80
100
120
°C
10 -2 0
10
160
10
1
10
2
10
V
VDS
TC
3 Transient thermal impedance
4 Typ. output characteristic
ZthJC = f (t p)
ID = f (VDS); Tj=25°C
parameter: D = tp/T
parameter: tp = 10 µs, VGS
10
1
35
20V
12V
10V
K/W
A
25
ID
ZthJC
10 0
10 -1
9V
20
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -2
10 -3
15
8V
10
7V
5
6V
10 -4 -7
10
Rev. 2.3
10
-6
10
-5
10
-4
10
-3
s
tp
10
-1
Page 5
0
0
5
10
15
VDS
25
V
2005-07-22
3
SPB11N60S5
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS); Tj=150°C
RDS(on)=f(ID)
parameter: tp = 10 µs, VGS
parameter: Tj=150°C, V GS
2
18
20V
12V
10V
A
9V
mΩ
RDS(on)
14
ID
8V
12
10
20V
12V
10V
9V
8V
7V
6V
1
8
7V
6
0.5
4
6V
2
0
0
5
10
V
15
0
0
25
2
4
6
8
10
12
14
VDS
A
ID
7 Drain-source on-state resistance
8 Typ. transfer characteristics
RDS(on) = f (Tj)
ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max
parameter : ID = 7 A, VGS = 10 V
parameter: tp = 10 µs
2.1
SPP11N60S5
18
32
Ω
A
1.6
24
1.4
ID
RDS(on)
1.8
20
1.2
16
1
0.8
12
0.6
8
98%
0.4
typ
4
0.2
0
-60
-20
20
60
100
°C
180
0
0
4
8
12
V
20
VGS
Tj
Rev. 2.3
25 °C
150 °C
Page 6
2005-07-22
SPB11N60S5
9 Typ. gate charge
10 Forward characteristics of body diode
VGS = f (QGate)
IF = f (VSD)
parameter: ID = 11 A pulsed
parameter: Tj , tp = 10 µs
16
10 2
SPP11N60S5
V
SPP11N60S5
A
0.2 VDS max
10 1
10
IF
VGS
12 0.8 VDS max
8
6
10 0
Tj = 25 °C typ
4
Tj = 150 °C typ
Tj = 25 °C (98%)
2
0
0
Tj = 150 °C (98%)
10
20
30
40
50
nC
10 -1
0
65
0.4
0.8
1.2
1.6
2.4 V
2
QGate
3
VSD
11 Avalanche SOA
12 Avalanche energy
IAR = f (tAR)
EAS = f (Tj)
par.: Tj ≤ 150 °C
par.: ID = 5.5 A, V DD = 50 V
350
11
A
mJ
9
250
EAS
IAR
8
7
200
6
5
Tj (START) =25°C
150
4
3
100
Tj (START) =125°C
2
50
1
0 -3
10
Rev. 2.3
10
-2
10
-1
10
0
10
1
10
2
4
µs 10
tAR
Page 7
0
20
40
60
80
100
120
°C
160
Tj
2005-07-22
SPB11N60S5
13 Drain-source breakdown voltage
14 Avalanche power losses
V(BR)DSS = f (Tj)
PAR = f (f )
parameter: E AR=0.6mJ
720
SPP11N60S5
300
V
680
PAR
V(BR)DSS
W
660
200
640
150
620
100
600
580
50
560
540
-60
-20
20
60
100
°C
0 4
10
180
10
5
Hz
Tj
10
f
15 Typ. capacitances
16 Typ. Coss stored energy
C = f (VDS)
Eoss=f(VDS)
parameter: V GS=0V, f=1 MHz
10 4
7.5
µJ
pF
Ciss
6
10 3
C
Eoss
5.5
5
4.5
4
10 2
Coss
3.5
3
2.5
10
1
2
Crss
1.5
1
0.5
10 0
0
100
200
300
400
V
600
VDS
Rev. 2.3
0
0
100
200
300
400
V
600
VDS
Page 8
2005-07-22
6
SPB11N60S5
Definition of diodes switching characteristics
Rev. 2.3
Page 9
2005-07-22
SPB11N60S5
PG-TO263-3-2, PG-TO263-3-5, PG-TO263-3-22
Rev. 2.3
Page 10
2005-07-22
SPB11N60S5
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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characteristics.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Rev. 2.3
Page 11
2005-07-22