Si4788CY Vishay Siliconix 5-A Controlled Slew Rate Load Switch with Level Shift FEATURES D D D D D D 5-A Maximum Load Switches Voltages 1.8- to 5.5-V Ground Referenced Logic Inputs 1.8- to 5-V Logic Voltage Compatible 25-mW Maximum On-Resistance Level-Shifted Gate Drive Means The Control (Logic) Voltage Is Independent Of Power Voltage D Slow Turn-On (Controlled Slew Rate) Eliminates High Inrush Currents D Low Power Consumption In Off State D Active Pull-Down On Output When In Off State D RoHS Compliant Pb-free Available DESCRIPTION The Si4788CY is a p-channel MOSFET with a logic interface. The control input is compatible with all types of logic down to 1.8 V. The switch can be used to control voltages from 1.8 V to 5.5 V, and the logic input can be a lower voltage than the power. The switch also incorporates reduced switching speed to reduce inrush when switching loads with a high value of capacitance. The Si4788CY is packaged in an 8-pin SOIC package and rated for the commercial temperature range of 0 to 85_C. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION S IN Document Number: 71100 S-50246—Rev. D, 21-Feb-05 D Logic and Gate Drive www.vishay.com 1 Si4788CY Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Voltage Referenced to GND VS, VDa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 7.0 V VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 7.0 V Power Dissipation (Continuous)a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 W Pulsed Drain Current (IDM)b . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 A Continuous P-Switch Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 A Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C Notes a. Device mounted with all leads soldered to 1” x 1” FR4 with laminated copper PC board. b. Pulse width p300 ms, dc p2%. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8 V to 5.5 V Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . −25 to 85_C VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to 5.5 V Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25 to 150_C This device has a maximum recommended operating junction temperature of 85_C. This temperature limit is used for electrical specifications such as logic transition voltages only and is not a reliability limit. The device can be used with junction temperatures up to 150_C if relaxed specifications can be tolerated, although limits for these specifications may not be given. Performance curves can be used to give an indication of specifications at higher temperatures, but are not guaranteed. THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-AmbientNO TAG Maximum Junction-to-Foot (Drain)NO TAG Symbol Typical Maximum Steady State RthJA 80 95 Steady State RthJF 15 20 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Junction-to-foot thermal impedance represents the effective thermal impedance of all heat carrying leads in parallel and is intended for use in conjunction with the thermal impedance of the PC board pads to ambient (RthJA = RthJF + RthPCB-A). It can also be used to estimate chip temperature if power dissipation and the lead temperature of a heat carrying (drain) lead is known. SPECIFICATIONS Limits Parameter On-Resistance Pull-Down Resistance Symbol rDS(on) Typc Maxb Room 23 29 VS = 3.3 V, ID = 1 A, VIN = H Room 20 25 VS = 4.5 V, ID = 1 A, VIN = H Room 16 20 Specific Test Conditions Tempa VS = 2.5 V, ID = 1 A, VIN = H Minb rPULL-DOWN VS = 3.3 V to 5 V, VIN = L Room 20 W IS(off) VS = 1.8 V to 5 V, VIN = L Room 1.2 mA Logic Input Voltage Low VINL 0.6 VINH Turn-On Delay td(on) Turn-Off Delay td(off) Rise Time tRISE Fall Time tFALL Maximum Turn-On Slew Rate dv/dt VS = 3.3 V to 5 V Full VS = 1.8 V to 3.3 V Full VS = 3.3 V to 5 V Full 2.2 Full 1.5 VS = 1.8 V to 3.3 V Room VIN = 5 V V, ILOAD = 1 A, A CLOAD = 100 mF F Test Circuit 1 12 mW Leakage Current Input Voltage High 8 Unit 0.3 16 V 35 Room 20 40 Room 280 550 Room 920 1800 Room 20 ms V/ms Notes a. Room = 25_C, Full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. www.vishay.com 2 Document Number: 71100 S-50246—Rev. D, 21-Feb-05 Si4788CY Vishay Siliconix TIMING DIAGRAMS VS 50% 50% VIN 0V VIN 90% VD VD 10% td(on) 90% 10% td(off) tr tf TEST CIRCUIT 1 PIN CONFIGURATION SO-8 VIN 1 8 TRUTH TABLE GND SOURCE 2 7 DRAIN SOURCE 3 6 DRAIN SOURCE 4 5 DRAIN VIN Switch 0 Off 1 On Top View Ordering Information: Si4788CY Si4788CY-T1 (with Tape and Reel) Si4788CY—E3 (Lead (Pb)-Free) Si4788CY-T1—E3 (Lead (Pb)-Free with Tape and Reel) PIN DESCRIPTION Document Number: 71100 S-50246—Rev. D, 21-Feb-05 Pin Number Symbol 1 VIN 2, 3, 4 SOURCE 5, 6, 7 DRAIN 8 GND Description Input pin Ground www.vishay.com 3 Si4788CY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Input Voltage Trip Point vs. Temperature Total Off-State Leakage Current 10.000 1.30 TJ = 25_C 1.25 I TOTAL ( mA) VIN − Trip Point 1.000 VS = 5 V 1.20 1.15 0.100 TJ = 150_C 1.10 0.010 1.05 1.00 −50 −25 0 25 50 75 100 125 0.001 0 150 2 4 Temperature (_C) On-Resistance vs. VIN Voltage 0.032 0.024 0.016 0.008 0.000 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1.2 1.0 0.8 0.6 −50 5.5 −25 trise tdon 100 125 150 400 600 Load Capacitance (mF) 800 3000 125 150 VS = 3.3 V 2000 VS = 5 V VIN = 5 V ID = 1 A RLOAD = 5 W 200 ( mS) 100 4000 t RISE Time ( mS) 75 5000 10 4 50 VS = VIN CLOAD = 100 mF ID = 1 A 6000 tdoff www.vishay.com 25 Rise Time vs. Temperature 7000 tfall 1 0 0 TJ − Junction Temperature (_C) Switching Time vs. Load Capacitance 1000 10 VS = 4.5 V VIN = 4.5 V ID = 1 A VS(V) 10000 8 Normalized On-Resistance vs. Junction Temperature 1.4 VS = VIN ID = 1 A r DS(on) − On-Resistance ( W ) Normalized r DS(on) − On-Resistance ( W ) 0.040 6 VS (V) 1000 1000 0 −50 VS = 5.0 V −25 0 25 50 75 100 Temperature (_C) Document Number: 71100 S-50246—Rev. D, 21-Feb-05 Si4788CY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Turn-On Delay vs. Temperature Fall Time vs. Temperature 100 1100 VS = 3.3 V 1000 VS = VIN CLOAD = 100 mF ID = 1 A 60 t fall ( m s) t d(on) ( m s) 80 40 VS = 5.0 V 20 VS = VIN CLOAD = 100 mF ID = 1 A 900 800 700 0 VS = 5.0 V VS = 3.3 V 600 −50 −25 0 25 50 75 100 125 150 −50 −25 0 25 Temperature (_C) Turn-Off Delay vs. Temperature VS = VIN CLOAD = 100 mF ID = 1 A 24 Power (W) t d(off) ( m s) 125 150 80 VS = 3.3 V VS = 5.0 V 60 40 20 8 0 0 −50 −25 0 25 50 75 100 125 150 0.001 Temperature (_C) 1 0.1 1 10 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.01 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 100 Single Pulse Power 100 16 75 Temperature (_C) 40 32 50 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80_C/W 0.02 3. TJM − TA = PDMZthJA(t) Single Pulse 0.01 10−4 10−3 4. Surface Mounted 10−2 10−1 1 10 100 600 Square Wave Pulse Duration (sec) Document Number: 71100 S-50246—Rev. D, 21-Feb-05 www.vishay.com 5 Si4788CY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 TYPICAL APPLICATIONS The Si4788CY can be used to control a load up to 5-Amp where the control logic voltage is different from the voltage of the load being controlled, and/or the load has a large capacitive component and inrush currents must be minimized during switching. The low RDS(on) of 20-mW typical makes the switch ideal for applications such as power bus switching in notebook computers and central office telecom equipment. For a load of 5 A, the voltage drop is only approximately 100 mV. The control input is a CMOS compatible input with a minimum high input voltage of 2.2 V with a power rail voltage of 5 V. It is www.vishay.com 6 therefore compatible with any CMOS logic voltage between 2.2 V and 5 V under these conditions with no extra configuration required. With a 3.3-V power rail voltage the minimum high input voltage is 1.5 V, making it compatible with 1.8-V logic. The Si4788CY is designed to give a steady dv/dt on the output during turn-on even with capacitive loads. The output rise time is 280-ms typical with a 100-mF load, which corresponds to a dv/dt of about 20 V/ms, or a capacitive inrush current of around 2-A max with a 100-mF load. Higher values of capacitance result in a slower switching speed, therefore even with very high values of capacitance, inrush should not be a problem. Document Number: 71100 S-50246—Rev. D, 21-Feb-05 Si4788CY Vishay Siliconix Si4788CY Device Bay Si4788CY Main Bus Si4788CY HDD 5V 3.3 V DC/DC Converter Power Management FIGURE 1. Si4788CY Used To Control 5-V Bus With 3.3-V Logic Control 3.3 V 2.5 V Si4788CY DC/DC Converter Power Management Load FIGURE 2. Si4788CY Used To Control 3.3-V Bus With 2.5-V or 3.3-V Logic Power Si4788CY 56 kW “Live Plugged” Load Circuit provides delayed turn-on of the Si4788CY in the Absence of a Power_On signal. 56 kW 0.1 mF FIGURE 3. Si4788CY Used As Inrush Limiter On Removable Card Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71100. Document Number: 71100 S-50246—Rev. D, 21-Feb-05 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1