Si4710CY Datasheet

Si4710CY
New Product
Vishay Siliconix
Battery Disconnect Switch
Level-Shifted Gate Drive with Internal MOSFET
Ultra Low Power Consumption in Off State
(Leakage Current Only)
Logic Supply Voltage is Not Required
Solution for Bi-Directional Blocking
Bi-Directional Conduction Switch
6- to 30-V Operation
Ground Referenced Logic Level Inputs
Integrated Low rDS(on) MOSFET
The Si4710CY is a level-shifted p-channel MOSFET. Operating
two in a series, these MOSFETs can be used as a reverse
blocking switch for battery disconnect applications. It is a solution
for multiple battery technology designs or designs that require
isolation from the power bus during charging.
The Si4710CY is available in a 8-pin SOIC package and is rated
for the commercial temperature range of –25 to 85C.
2
IN
1
5, 6, 7
ESD
GND
Logic
and
Gate
Drive
G
D
Level
Shift
8
VGS
Limiter
3, 4
S
Half a circuit shown here.
Document Number: 71106
S-99585—Rev. A, 20-Dec-98
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Si4710CY
New Product
Vishay Siliconix
Voltage Referenced to GND
VS, VDa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 30 V
VSD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 30 V
VIN1, VIN2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 15 V
VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 V
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150C
Power Dissipationb
(t = 10 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.3 W
(t = steady state) . . . . . . . . . . . . . . . . . . . . . . . 1.4 W
Thermal Resistance
Max Junction-Ambientb (t = 10 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . 55 C/W
(t = steady state) . . . . . . . . . . . . . . . . . . . . . 90 C/W
Max Junction-Foot
(t = steady state) . . . . . . . . . . . . . . . . . . . . . 27 C/W
Notes
a. VSD ≤ 30 VDC
b. Device mounted with all leads soldered to 1” x 1” FR4 with laminated
copper PC board.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V to 30 V
VIN1, VIN2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to 13.2 V
IDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 A to 6 A
Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 to 85C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 to 150C
Limits
P
Parameter
On-Resistance
Leakage Current
0.018
Room
VDS = 10 V
Room
1
Room
1
VINL
VINH
IN
t D or S
to
0.014
VS = 10 V, ID = 1 A, VIN = H
Input Voltage High
Turn-Off Delay
Unit
rDS
Input Voltage Low
Turn-On Delay
Maxb
IDS(off)
IS
GND(on)
Input Leakage Current
Typc
S
Specific
ifi T
Test Conditions
C di i
IS
GND(off)
Power Consumption
Minb
S b l
Symbol
Tempa
IINH
VS = 17 V
Room
VS = 10 V
VIN = 5.0 V
tON(IN)
tOFF(IN)
Full
Full
6
0.8
2.5
Full
Room
VS = 10 V,
V RL = 5 ,
Test
T Circuit
Ci i 1
1.1
5
3.0
6
Room
1.5
3
Room
1.25
3
Room
50
150
10.2
Rise Time
tRISE
Fall Time
tFALL
Voltage Across Pin 6 and 7
VGS
VS = 30 V
Room
Forward Diode
VSD
ID = –1 A
Room
A
A
18
V
A
s
ns
V
1.1
Notes
a. Room = 25C, Full = as determined by the operating temperature suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
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Document Number: 71106
S-99585—Rev. A, 20-Dec-98
Si4710CY
New Product
Vishay Siliconix
10 V
SOURCE
50%
50%
VIN
0V
90%
DRAIN
VD
10%
5
tON(IN)
90%
10%
tOFF(IN)
tr
tf
TEST CIRCUIT 1
SO-8
IN
1
8
GND
G
2
7
D
S
3
6
D
4
5
D
S
Order Number: Si4710CY
VIN
Switch
0
Off
0
Off
1
On
1
On
Pin Number
Document Number: 71106
S-99585—Rev. A, 20-Dec-98
Symbol
Description
5, 6
D
8
GND
Drain connection for MOSFET.
1
IN
Logic input, IN. High level turns on the switch.
2
G
Gate output to MOSFET.
3, 4
S
Source connection for MOSFET.
Ground
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Si4710CY
New Product
Vishay Siliconix
On-Resistance vs. Drain Current
On-Resistance vs. Source Voltage
0.10
r DS(on) – Drain-Source On-Resistance ( )
r DS(on) – Drain-Source On-Resistance ( )
0.030
0.025
0.020
VS = 10 V
0.015
0.010
0.005
0.08
0.06
0.04
IS = 1 A
0.02
0
0.000
0
1
2
3
4
5
0
6
4
8
Normalized On-Resistance vs.
Junction Temperature
20
2500
VS = 10 V
IS = 1 A
2000
1.4
1.2
C OSS (pF)
r DS(on) – On-Resistance ( )
(Normalized)
16
Output Capacitance vs. Source Voltage
1.8
1.6
12
VS (V)
IS (A)
1.0
1500
1000
VIN = 0 V
0.8
500
0.6
0.4
–50
0
–25
0
25
50
75
100
125
150
0
5
10
15
20
25
TJ – Junction Temperature (C)
VS (V)
Off-Supply Current vs. Source Voltage
On-Supply Current vs. Source Voltage
30
10.000
10.000
TJ = 150C
TJ = 150C
TJ = 25C
1.000
I S ( A)
I S ( A)
1.000
0.100
TJ = 25C
0.010
0.001
0
5
10
15
VS (V)
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2-4
0.100
0.010
20
25
30
0.001
0
5
10
15
20
25
30
VS (V)
Document Number: 71106
S-99585—Rev. A, 20-Dec-98
Si4710CY
New Product
Vishay Siliconix
Input Voltage Trip Point vs. Temperature
Drain-Source Diode Forward Voltage
10
1.8
1.6
V IN Trip Point
I S – Source Current (A)
TJ = 150C
TJ = 25C
VS = 21 V
1.4
VS = 10 V
1.2
1.0
0.8
1
0
0.2
0.4
0.6
0.8
1.0
1.2
–50
1.4
–25
VSD – Source-to-Drain Voltage (V)
Turn-On Delay vs. Temperature
100
125
150
125
150
125
150
VS = 10 V
Rl = 5 3.6
1.8
3.2
1.6
t d(on) ( s)
t d(on) ( s)
75
Turn-off Delay vs. Temperature
2.8
2.4
1.4
1.2
2.0
1
–25
0
25
50
75
100
125
150
–50
–25
0
Temperature (C)
25
50
75
100
Temperature (C)
Rise Time vs. Temperature
Fall Time vs. Temperature
80
1.8
VS = 10 V
Rl = 5 70
VS = 10 V
Rl = 5 60
( ns)
1.4
1.2
50
t fall
t rise ( s)
50
2.0
VS = 10 V
Rl = 5 1.6
25
TA = Ambient Temperature (C)
4.0
–50
0
1.0
40
0.8
30
0.6
–50
20
–25
0
25
50
75
Temperature (C)
Document Number: 71106
S-99585—Rev. A, 20-Dec-98
100
125
150
–50
–25
0
25
50
75
100
Temperature (C)
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Si4710CY
New Product
Vishay Siliconix
Single Pulse Power, Junction-to-Foot
100
80
80
60
60
Power (W)
Power (W)
Single Pulse Power, Junction-to-Ambient
100
40
20
40
20
0
0
0.01
0.001
0.1
1
10
0.001
0.01
Time (sec)
0.1
1
10
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 63C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
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2-6
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71106
S-99585—Rev. A, 20-Dec-98
Si4710CY
New Product
Vishay Siliconix
Si4710CY
AC/DC
5, 6, 7
Si4710CY
3, 4
3, 4
2
Charger
Logic In
1
5, 6, 7
Display
Power
2
Drive
1
Drive
Logic In
Si4710CY
Si4710CY
Si6415
3, 4
5, 6, 7
5, 6, 7
2
3, 4
2
Battery-A
Drive
1
Logic In
Logic In
1
Drive
Si4710CY
Si4710CY
Si6415
3, 4
5, 6, 7
5, 6, 7
2
3, 4
2
Battery-B
Drive
1
Logic In
Logic In
1
Drive
Figure 1: High-Performance Laptop PC
Document Number: 71106
S-99585—Rev. A, 20-Dec-98
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2-7
Si4710CY
New Product
Vishay Siliconix
Si4710CY
Si4435DY
5, 6, 7
3, 4
2
Battery-A
1
Logic In
Drive
Si4710CY
Si4435DY
5, 6, 7
3, 4
2
Battery-B
1
Logic In
5V
Drive
3.3 V
DC-DC
Converter
Figure 2:
AC/DC
Charger
Si4710CY
Si4710CY
Display
Power
5, 6, 7
3, 4
5, 6, 7
3, 4
2
Logic In
1
2
1
Logic In
Drive
5V
DC-DC
Converter
Battery
Drive
3.3 V
Figure 3: Low-Cost Laptop PC
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Document Number: 71106
S-99585—Rev. A, 20-Dec-98
Si4710CY
New Product
Vishay Siliconix
Si4710CY
5-V Output
5, 6, 7
3, 4
3.3 V
2
Logic In
1
Drive
DC-DC
Converter
Si4710CY
3.3-V Output
5, 6, 7
3, 4
5V
2
Logic In
1
Drive
Figure 4: ACPI Power Saving Switcher
Document Number: 71106
S-99585—Rev. A, 20-Dec-98
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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