NSS12201LT1G 12 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 12 VOLTS, 4.0 AMPS NPN LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 35 mW COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage Rating VCEO 12 Vdc Collector-Base Voltage VCBO 12 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 2.0 A 2 A SOT−23 (TO−236) CASE 318 STYLE 6 Collector Current − Continuous Collector Current − Peak ICM 4.0 Electrostatic Discharge ESD HBM Class 3B MM Class C 3 1 MAXIMUM RATINGS (TA = 25°C) MARKING DIAGRAM Rating Symbol Max Unit Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 460 mW 3.7 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 270 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 540 mW 4.3 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 230 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 100 mm2, 1 oz. copper traces. 2. FR−4 @ 500 mm2, 1 oz. copper traces. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 5 1 VF M G G 1 VF = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NSS12201LT1G SOT−23 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSS12201L/D NSS12201LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max 12 − − 12 − − 6.0 − − − − 0.1 − − 0.1 200 200 200 200 − 330 − − − − − − − − − − 0.003 0.035 0.053 0.068 0.008 0.050 0.080 0.090 − 0.760 0.900 − 0.750 0.900 150 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO Emitter−Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 12 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 6.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 10 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) hFE Collector −Emitter Saturation Voltage (Note 3) (IC = 0.1 A, IB = 0.01 A) (IC = 1.0 A, IB = 0.100 A) (IC = 1.0 A, IB = 0.010 A) (IC = 2.0 A, IB = 0.2 A) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 10 mA) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = 1.0 A, VCE = 2.0 V) VBE(on) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) fT V V V MHz Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo − − 450 pF Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo − − 75 pF Delay (VCC = 10 V, IC = 750 mA, IB1 = 15 mA) td − − 100 ns Rise (VCC = 10 V, IC = 750 mA, IB1 = 15 mA) tr − − 100 ns Storage (VCC = 10 V, IC = 750 mA, IB1 = 15 mA) ts − − 350 ns Fall (VCC = 10 V, IC = 750 mA, IB1 = 15 mA) tf − − 110 ns SWITCHING CHARACTERISTICS 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. http://onsemi.com 2 NSS12201LT1G TYPICAL CHARACTERISTICS 0.25 IC/IB = 10 150°C 0.15 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.2 25°C IC/IB = 100 0.15 0.1 −55°C 0.05 0 25°C 0.1 −55°C 0.05 0.001 0.01 0.1 1 0 10 0.001 0.01 IC, COLLECTOR CURRENT (A) 1.1 150°C (5.0 V) VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 425 375 25°C (5.0 V) 325 25°C (2.0 V) 275 225 −55°C (5.0 V) 175 −55°C (2.0 V) 125 0.001 0.01 0.1 1 −55°C 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current VCE = 2.0 V −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 0.1 0.9 IC, COLLECTOR CURRENT (A) 1.0 0.9 10 IC/IB = 10 1.0 0.3 10 0.001 0.01 0.1 1 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN 150°C (2.0 V) 475 1 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 575 525 0.1 IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE EMITTER TURN−ON VOLTAGE (V) 150°C 0.2 1.0 IC = 500 mA 10 mA 0.8 100 mA 0.6 300 mA 0.4 0.2 0 0.01 IC, COLLECTOR CURRENT (A) 0.1 1 10 IB, BASE CURRENT (mA) Figure 5. Base Emitter Turn−On Voltage vs. Collector Current Figure 6. Saturation Region http://onsemi.com 3 100 NSS12201LT1G TYPICAL CHARACTERISTICS Cobo, OUTPUT CAPACITANCE (pF) 90 Cibo(pF) 375 350 325 300 275 250 225 200 175 0 1 2 3 4 5 6 Cobo(pF) 80 70 60 50 40 0 1 2 3 4 5 6 7 8 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 7. Input Capacitance Figure 8. Output Capacitance 10 IC, COLLECTOR CURRENT (A) Cibo, INPUT CAPACITANCE (pF) 425 400 100 ms 10 ms 1s 1 ms 1 Thermal Limit 0.1 0.01 Single Pulse Test at Tamb = 25°C 0.01 0.1 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 9. Safe Operating Area http://onsemi.com 4 100 9 10 NSS12201LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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