NSS40401LT1G 40 V, 8.0 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 40 VOLTS, 8.0 AMPS NPN LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 44 mW COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage VEBO 7.0 Vdc IC 4.0 A Collector Current − Peak ICM 8.0 A Electrostatic Discharge ESD HBM Class 3B MM Class C Rating Collector Current − Continuous 3 1 2 SOT−23 (TO−236) CASE 318 STYLE 6 THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 460 mW 3.7 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 270 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 540 mW 4.3 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 230 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 100 mm2, 1 oz. copper traces. 2. FR−4 @ 500 mm2, 1 oz. copper traces. AC M G G 1 AC = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NSS40401LT1G SOT−23 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 December, 2011 − Rev. 0 1 Publication Order Number: NSS40401L/D NSS40401LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 40 − − 40 − − 6.0 − − − − 0.1 − − 0.1 200 200 180 180 − 370 − − − − − − − − − − 0.006 0.044 0.085 0.082 0.011 0.060 0.115 0.115 − 0.760 0.900 − 0.760 0.900 150 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 40 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 6.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = 10 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) Collector −Emitter Saturation Voltage (Note 3) (IC = 0.1 A, IB = 0.010 A) (IC = 1.0 A, IB = 0.100 A) (IC = 1.0 A, IB = 0.010 A) (IC = 2.0 A, IB = 0.200 A) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 10 mA) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = 1.0 A, VCE = 2.0 V) VBE(on) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) fT V V V MHz Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo − − 450 pF Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo − − 45 pF Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) td − − 100 ns Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) tr − − 100 ns Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) ts − − 750 ns Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) tf − − 110 ns SWITCHING CHARACTERISTICS 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. http://onsemi.com 2 NSS40401LT1G TYPICAL CHARACTERISTICS 800 600 500 25°C 400 300 −55°C 200 100 0 0.001 0.01 0.1 1 500 25°C 400 300 −55°C 200 0 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain vs. Collector Current Figure 2. DC Current Gain vs. Collector Current 0.5 IC/IB = 10 150°C 0.4 0.3 0.2 25°C 0.1 −55°C 0 0.001 0.01 0.1 1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 600 100 0.5 10 IC/IB = 50 0.4 0.3 150°C 0.2 0.1 25°C 0 0.001 IC, COLLECTOR CURRENT (mA) VBE(on), BASE−EMITTER TURN−ON VOLTAGE (V) −55°C 0.6 0.4 0.1 1 10 1.2 IC/IB = 10 1.0 0.8 0.01 Figure 4. Collector−Emitter Saturation Voltage vs. Collector Current 1.4 1.2 −55°C IC, COLLECTOR CURRENT (mA) Figure 3. Collector−Emitter Saturation Voltage vs. Collector Current VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE = 5.0 V 150°C 700 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 700 800 VCE = 2.0 V 150°C 25°C 0.2 150°C 0 0.001 0.01 0.1 1 10 VCE = 2.0 V 1.0 −55°C 0.8 0.6 25°C 0.4 0.2 0 150°C 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA) Figure 5. Base−Emitter Saturation Voltage vs. Collector Current Figure 6. Base−Emitter Turn−On Voltage vs. Collector Current http://onsemi.com 3 10 NSS40401LT1G 2.0 80 TA = 25 °C Cobo, OUTPUT CAPACITANCE (pF) VCE, COLLECTOR−EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS 1.6 1.2 0.8 2A 0.4 10 mA 0 0.01 100 mA 0.1 IC = 4 mA 500 mA 1 100 10 70 60 50 40 30 20 10 1000 0 IB, BASE CURRENT (mA) 15 20 25 30 35 Figure 8. Output Capacitance 400 10 375 IC, COLLECTOR CURRENT (A) Cibo, INPUT CAPACITANCE (pF) 10 VCB, COLLECTOR BASE VOLTAGE (V) Figure 7. Collector Saturation Region 350 325 300 275 250 225 200 175 5 0 1 2 3 4 5 100 ms 1s 0.1 0.01 6 1 ms 10 ms 1 0.01 0.1 1 10 VEB, EMITTER BASE VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 9. Input Capacitance Figure 10. Safe Operating Area http://onsemi.com 4 100 NSS40401LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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