JFET Chopper Transistors

2N5638, 2N5639
2N5638 is a Preferred Device
JFET Chopper Transistors
N−Channel − Depletion
N−Channel Junction Field Effect Transistors, depletion mode
(Type A) designed for chopper and high−speed switching applications.
Features
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• Low Drain−Source “ON” Resistance: RDS(on) = 30W for 2N5638
RDS(on) = 60W for 2N5639
1 DRAIN
• Low Reverse Transfer Capacitance −
Crss = 4.0 pF (Max) @ f = 1.0 MHz
• Fast Switching Characteristics − tr = 5.0 ns (Max) (2N5638)
• Pb−Free Packages are Available*
3
GATE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain −Source Voltage
VDS
30
Vdc
Drain −Gate Voltage
VDG
30
Vdc
Reverse Gate −Source Voltage
VGSR
30
Vdc
Forward Gate Current
IGF
10
mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
310
2.82
mW
mW/°C
Storage Temperature Range
Tstg
−65 to +150
°C
Operating Junction Temp Range
TJ
−65 to +135
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
VDD = 10 Vdc
V
RL + DD * (RDS(on) ) 50)
ID
50
PULSE
GENERATOR
INPUT
(SCOPE A)
TO
50 W
0.001 mF SCOPE B
+
RL
tf
90%
12
50 W
VGS(off)
1.0 k
50
x = 8 or 9
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
2N5639
TO
50 W
SCOPE A
tr
2N5639G
2N5369RLRA
2N5369RLRAG
SCOPE
TEKTRONIX 567A
OR EQUIVALENT
Figure 1. Switching Times Test Circuit
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
2N
563x
AYWW G
G
3
2N5638RLRAG
50
March, 2006 − Rev. 4
TO−92
CASE 29
STYLE 5
2N5638RLRA
10%
OUTPUT
(SCOPE B)
MARKING
DIAGRAM
−
VGS(on)
10%
90%
td(on)
td(off)
0.1 mF
2 SOURCE
Package
Shipping†
TO−92
2000/Tape & Reel
TO−92
(Pb−Free)
2000/Tape & Reel
TO−92
1000 Units/Box
TO−92
(Pb−Free)
1000 Units/Box
TO−92
2000/Tape & Reel
TO−92
(Pb−Free)
2000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N5638/D
2N5638, 2N5639
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
35
−
Vdc
IGSS
−
1.0
1.0
nAdc
mAdc
ID(off)
−
OFF CHARACTERISTICS
Gate −Source Breakdown Voltage
(IG = −1.0 mAdc, VDS = 0)
Gate Reverse Current
(VGS = −15 Vdc, VDS = 0)
(VGS = −15 Vdc, VDS = 0, TA = 100°C)
Drain−Cutoff Current
(VDS = 15 Vdc, VGS = −12 Vdc)
(VDS = 15 Vdc, VGS = −12 Vdc, TA = 100°C)
(VDS = 15 Vdc, VGS = −8.0 Vdc)
(VDS = 15 Vdc, VGS = −8.0 Vdc, TA = 100°C)
2N5638
2N5638
2N5639
2N5639
mAdc
1.0
1.0
1.0
1.0
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (Note 1)
(VDS = 20 Vdc, VGS = 0)
2N5638
2N5639
Drain−Source “ON” Voltage
(ID = 12 mAdc, VGS = 0)
(ID = 6.0 mAdc, VGS = 0)
2N5638
2N5639
IDSS
50
25
−
−
−
−
0.5
0.5
−
−
30
60
−
−
30
60
VDS(on)
Static Drain−Source “ON” Resistance
(ID = 1.0 mAdc, VGS = 0)
Vdc
W
RDS(on)
2N5638
2N5639
mAdc
SMALL−SIGNAL CHARACTERISTICS
W
RDS(on)
Static Drain−Source “ON” Resistance
(VGS = 0, ID = 0, f = 1.0 kHz)
2N5638
2N5639
Input Capacitance
(VDS = 0, VGS = −12 Vdc, f = 1.0 MHz)
Ciss
−
10
pF
Reverse Transfer Capacitance
(VDS = 0, VGS = −12 Vdc, f = 1.0 MHz)
Crss
−
4.0
pF
SWITCHING CHARACTERISTICS (VDD = 10 Vdc, VGS(on) = 0, VGS(off) = −10 Vdc, RG’ = 50 W. See Figure 1 on page 1)
Turn−On Delay Time
ID(on) = 12 mAdc, 2N5638
ID(on) = 6.0 mAdc, 2N5639
td(on)
−
−
4.0
6.0
ns
Rise Time
ID(on) = 12 mAdc, 2N5638
ID(on) = 6.0 mAdc, 2N5639
tr
−
−
5.0
8.0
ns
Turn−Off Delay Time
ID(on) = 12 mAdc, 2N5638
ID(on) = 6.0 mAdc, 2N5639
td(off)
−
−
5.0
10
ns
Fall Time
ID(on) = 12 mAdc, 2N5638
ID(on) = 6.0 mAdc, 2N5639
tf
−
−
10
20
ns
1. Pulse Width ≤ 300 ms, Duty Cycle ≤ 3.0%.
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2
2N5638, 2N5639
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X−X
1
N
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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http://onsemi.com
3
For additional information, please contact your
local Sales Representative.
2N5638/D