2N5638, 2N5639 2N5638 is a Preferred Device JFET Chopper Transistors N–Channel – Depletion N–Channel Junction Field Effect Transistors, depletion mode (Type A) designed for chopper and high–speed switching applications. http://onsemi.com • Low Drain–Source “ON” Resistance: • • RDS(on) = 30Ω for 2N5638 RDS(on) = 60Ω for 2N5639 Low Reverse Transfer Capacitance Crss = 4.0 pF (Max) @ f = 1.0 MHz Fast Switching Characteristics tr = 5.0 ns (Max) (2N5638) 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc VGSR 30 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation PD Reverse Gate–Source Voltage @ TA = 25°C Derate above 25°C Storage Temperature Range 310 2.82 mW mW/°C Tstg –65 to +150 °C TJ –65 to +135 °C Operating Junction Temp Range TO–92 CASE 29 STYLE 5 1 2 3 MARKING DIAGRAMS 2N 5638 YWW Y WW VDD = 10 Vdc V RL DD (RDS(on) 50) ID 50 PULSE GENERATOR INPUT (SCOPE A) tf 90% VGS(off) Device TO + – 50 OHM 0.001 F SCOPE B 50 Ohms 1.0 k 50 TO 50 OHM SCOPE A tr = Year = Work Week ORDERING INFORMATION 0.1 F VGS(on) 10% 90% td(on) td(off) RL 2N 5639 YWW Package Shipping 2N5638RLRA TO–92 2000/Tape & Reel 2N5639 TO–92 5000/Box 2N5369RLRA TO–92 2000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. 10% OUTPUT (SCOPE B) 50 SCOPE TEKTRONIX 567A OR EQUIVALENT Figure 1. Switching Times Test Circuit Semiconductor Components Industries, LLC, 2001 September, 2001 – Rev. 3 1 Publication Order Number: 2N5638/D 2N5638, 2N5639 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)GSS 35 – Vdc IGSS – 1.0 1.0 nAdc µAdc ID(off) – OFF CHARACTERISTICS (IG = –1.0 µAdc, VDS = 0) Gate–Source Breakdown Voltage Gate Reverse Current (VGS = –15 Vdc, VDS = 0) (VGS = –15 Vdc, VDS = 0, TA = 100°C) Drain–Cutoff Current (VDS = 15 Vdc, VGS = –12 Vdc) (VDS = 15 Vdc, VGS = –12 Vdc, TA = 100°C) (VDS = 15 Vdc, VGS = –8.0 Vdc) (VDS = 15 Vdc, VGS = –8.0 Vdc, TA = 100°C) 2N5638 2N5638 2N5639 2N5639 µAdc 1.0 1.0 1.0 1.0 ON CHARACTERISTICS Zero–Gate–Voltage Drain Current (Note 1.) (VDS = 20 Vdc, VGS = 0) 2N5638 2N5639 Drain–Source “ON” Voltage (ID = 12 mAdc, VGS = 0) (ID = 6.0 mAdc, VGS = 0) 2N5638 2N5639 IDSS 50 25 – – – – 0.5 0.5 – – 30 60 – – 30 60 VDS(on) Static Drain–Source “ON” Resistance (ID = 1.0 mAdc, VGS = 0) mAdc Vdc Ω RDS(on) 2N5638 2N5639 SMALL–SIGNAL CHARACTERISTICS Static Drain–Source “ON” Resistance (VGS = 0, ID = 0, f = 1.0 kHz) Ω RDS(on) 2N5638 2N5639 Input Capacitance (VDS = 0, VGS = –12 Vdc, f = 1.0 MHz) Ciss – 10 pF Reverse Transfer Capacitance (VDS = 0, VGS = –12 Vdc, f = 1.0 MHz) Crss – 4.0 pF SWITCHING CHARACTERISTICS (VDD = 10 Vdc, VGS(on) = 0, VGS(off) = –10 Vdc, RG’ = 50 Ω. See Figure 1 on page 1) Turn–On Delay Time ID(on) = 12 mAdc, 2N5638 ID(on) = 6.0 mAdc, 2N5639 td(on) – – 4.0 6.0 ns Rise Time ID(on) = 12 mAdc, 2N5638 ID(on) = 6.0 mAdc, 2N5639 tr – – 5.0 8.0 ns Turn–Off Delay Time ID(on) = 12 mAdc, 2N5638 ID(on) = 6.0 mAdc, 2N5639 td(off) – – 5.0 10 ns Fall Time ID(on) = 12 mAdc, 2N5638 ID(on) = 6.0 mAdc, 2N5639 tf – – 10 20 ns 1. Pulse Width ≤ 300 µs, Duty Cycle ≤ 3.0%. http://onsemi.com 2 2N5638, 2N5639 PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N http://onsemi.com 3 INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- 2N5638, 2N5639 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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