MMBF5457LT1 Preferred Device JFET − General Purpose Transistor N−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Drain−Gate Voltage VDG 25 Vdc VGS(r) −25 Vdc IG 10 mAdc Reverse Gate−Source Voltage Gate Current 1 DRAIN THERMAL CHARACTERISTICS 3 Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) (TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C RqJA 556 °C/W TJ, Tstg −55 to +150 °C SOT−23 (TO−236) CASE 318 STYLE 10 1 Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 2 MARKING DIAGRAM 6MG G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 0.75 0.062 in. 1 6 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † MMBF5457LT1 SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel MMBF5457LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 July, 2005 − Rev. 4 1 Publication Order Number: MMBF5457LT1/D MMBF5457LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)GSS −25 − − Vdc − − − − −1.0 −200 OFF CHARACTERISTICS Gate−Source Breakdown Voltage (IG = 10 mAdc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = 100°C) IGSS nAdc Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) VGS(off) −0.5 − −6.0 Vdc Gate Source Voltage (VDS = 15 Vdc, ID = 100 mAdc) VGS − −2.5 − Vdc IDSS 1.0 − 5.0 mAdc Forward Transfer Admittance (Note 2) (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |Yfs| 1000 − 5000 mmhos Output Common Source Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |yos| − 10 50 mmhos Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss − 4.5 7.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss − 1.5 3.0 pF ON CHARACTERISTICS Zero−Gate−Voltage Drain Current (Note 2) (VDS = 15 Vdc, VGS = 0) SMALL−SIGNAL CHARACTERISTICS 2. Pulse Test: Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%. http://onsemi.com 2 MMBF5457LT1 TYPICAL CHARACTERISTICS 14 VDS = 15 V VGS = 0 f = 1 kHz NF, NOISE FIGURE (dB) 12 10 8 6 4 2 0 0.001 10 0.01 0.1 1.0 RS, SOURCE RESISTANCE (Megohms) Figure 1. Noise Figure versus Source Resistance VGS(off) ^ −1.2 V 1.2 VGS = 0 V 1.0 −0.2 V 0.8 0.6 −0.4 V 0.4 −0.6 V 0 0.8 VDS = 15 V 0.6 0.4 0 −1.2 25 5 10 15 20 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) VGS(off) ^ −1.2 V 1.0 0.2 −0.8 V −1.0 V 0.2 0 I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) 1.2 Figure 2. Typical Drain Characteristics −0.8 −0.4 VGS, GATE−SOURCE VOLTAGE (VOLTS) Figure 3. Common Source Transfer Characteristics http://onsemi.com 3 0 MMBF5457LT1 TYPICAL CHARACTERISTICS 5 5 VGS(off) ^ −3.5 V 4 I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) VGS = 0 V VGS(off) ^ −3.5 V 3 −1 V 2 −2 V 1 4 3 VDS = 15 V 2 1 −3 V 0 0 5 10 15 20 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) 0 −5 25 Figure 4. Typical Drain Characteristics 10 VGS(off) ^ −5.8 V I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) VGS = 0 V −1 V 6 −2 V 4 −3 V 2 0 Figure 5. Common Source Transfer Characteristics 10 8 −3 −2 −1 −4 VGS, GATE−SOURCE VOLTAGE (VOLTS) −4 V VGS(off) ^ −5.8 V 8 6 VDS = 15 V 4 2 −5 V 0 0 5 10 15 20 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) 0 −7 25 Figure 6. Typical Drain Characteristics −6 −5 −4 −3 −2 −1 VGS, GATE − SOURCE VOLTAGE (VOLTS) Figure 7. Common Source Transfer Characteristics Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS. http://onsemi.com 4 0 MMBF5457LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D 3 1 E HE 2 DIM A A1 b c D E e L HE e A b A1 C L MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.54 0.69 2.40 2.64 STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.029 0.104 MMBF5457LT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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