SSM3J120TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J120TU ○ Power Management Switch Applications ○ High-Current Switching Applications Unit: mm 1.5 V drive Low on-resistance 2.1±0.1 Ron = 140 mΩ (max) (@VGS = -1.5 V) Ron = 78 mΩ (max) (@VGS = -1.8 V) Ron = 49 mΩ (max) (@VGS = -2.5 V) Ron = 38 mΩ (max) (@VGS = -4.0 V) Characteristics Drain-Source voltage Symbol Rating Unit VDS -20 V V VGSS ±8 DC ID -4.0 Pulse IDP -8.0 PD (Note 1) 800 PD (Note 2) 500 Channel temperature Tch 150 °C Storage temperature Tstg −55~150 °C Gate-Source voltage Drain current Drain power dissipation +0.1 0.3 -0.05 1 3 2 0.7±0.05 Absolute Maximum Ratings (Ta = 25°C) 0.166±0.05 2.0±0.1 1.7±0.1 0.65±0.05 • • A mW UFM 1. Gate 2. Source 3. Drain Note: Using continuously under heavy loads (e.g. the application of JEDEC ― high temperature/current/voltage and the significant change in JEITA ― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-2U1A operating temperature/current/voltage, etc.) are within the Weight: 6.6mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1 : Mounted on ceramic board (25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2) Note 2 : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2) Electrical Characteristics (Ta = 25°C) Characteristics Drain-Source breakdown voltage Symbol Test Condition Min Typ. Max V (BR) DSS ID = −1 mA, VGS = 0 −20 ⎯ ⎯ V (BR) DSX ID = −1 mA, VGS = +8 V −12 ⎯ ⎯ Unit V Drain cut-off current IDSS VDS = −20 V, VGS = 0 ⎯ ⎯ −10 μA Gate leakage current IGSS VGS = ±8 V, VDS = 0 ⎯ ⎯ ±1 μA −0.3 ⎯ −1.0 V 6.1 12.1 ⎯ S Gate threshold voltage Forward transfer admittance Drain-Source ON-resistance Vth VDS = −3 V, ID = −1 mA ⏐Yfs⏐ VDS = -3 V, ID = -2.0 A RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Switching time (Note 3) ID = -3.0 A, VGS = -4.0 V (Note 3) ⎯ 28 38 ID = -2.0 A, VGS = -2.5 V (Note 3) ⎯ 34 49 ID = -1.0 A, VGS = -1.8 V (Note 3) ⎯ 47 78 ID = -0.3 A, VGS = -1.5 V (Note 3) VDS = −10 V, VGS = 0 f = 1 MHz Turn-on time ton VDD = −10 V, ID = −2.0 A Turn-off time toff VGS = 0 ~ −2.5 V, RG = 4.7 Ω 1 mΩ ⎯ 60 140 ⎯ 1484 ⎯ pF ⎯ 185 ⎯ pF ⎯ 169 ⎯ pF ⎯ 67 ⎯ ⎯ 92 ⎯ ns 2007-11-01 SSM3J120TU Characteristics Symbol Total gate charge Qg Gate-Source charge Qgs Gate-Drain charge Qgd Drain-Source forward voltage VDSF Test Condition VDS = −16 V, IDS = −4.0 A, VGS = −4.0 V, ID = 4.0 A, VGS = 0 (Note 3) Min Typ. Max ⎯ 22.3 ⎯ ⎯ 14.9 ⎯ ⎯ 7.3 ⎯ ⎯ 0.8 1.2 Unit nC V Note 3: Pulse test Switching Time Test Circuit (a) Test Circuit (b) VIN 0V 10% OUT 0 IN 90% −2.5 V RG −2.5V 10 μs RL (c) VOUT VDD VDD = -10 V RG = 4.7 Ω D.U. < = 1% VIN: tr, tf < 5 ns Common Source Ta = 25 °C Marking VDS (ON) 90% 10% VDD tr ton tf toff Equivalent Circuit (top view) 3 3 JJB 1 2 1 2 Precaution Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = -1mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Be sure to take this into consideration when using the device. Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 2 2007-11-01 SSM3J120TU ID – VDS -8 -2.5 V -1.8 V ID – VGS -10000 Common Source VDS = -3 V -1.5 V (mA) -100 ID -4 Drain current Drain current ID (A) -1000 -6 VGS = -1.2 V -2 -10 Ta = 85 °C −25 °C -1 25 °C -0.1 0 Common Source Ta = 25 °C 0 -0.5 -1 -1.5 Drain - Source voltage VDS -0.01 0 -2 -0.2 (V) -0.4 Drain – Source on-resistance RDS (ON) (mΩ) Drain – Source on-resistance RDS (ON) (mΩ) 60 50 25 °C Ta = 85 °C 30 20 −25 °C 10 0 -2 -4 -6 Gate - Source voltage (V) Common Source 60 50 25 °C 40 Ta = 85 °C 30 20 −25 °C 10 0 VGS (V) -2 -4 -6 Gate - Source voltage RDS (ON) – ID -8 VGS (V) RDS (ON) – Ta 100 Common Source 80 Common Source Ta = 25 °C Drain – Source on-resistance RDS (ON) (mΩ) Drain – Source on-resistance RDS (ON) (mΩ) -1.6 70 0 -8 90 70 60 VGS = -1.5 V 50 -1.8 V 40 -2.5 V 30 -4.0 V 20 10 0 VGS -1.4 ID = -2.0 A 80 70 0 -1.2 RDS (ON) – VGS Common Source 40 -1.0 90 ID = -0.3 A 80 -0.8 Gate - Source voltage RDS (ON) – VGS 90 -0.6 80 ID = -0.3 A / VGS = -1.5 V -1.0 A / -1.8 V 60 40 -3.0 A / -4.0 V 20 -2.0 A / -2.5 V 0 -2 -4 Drain current -6 ID 0 −50 -8 (A) 0 50 Ambient temperature 3 100 Ta 150 (°C) 2007-11-01 SSM3J120TU Vth (V) Gate threshold voltage Common Source -0.7 -0.5 VDS = -3 V ID = -1 mA 10 Forward transfer admittance -0.6 (S) |Yfs| – ID 30 ⎪Yfs⎪ Vth – Ta -0.8 -0.4 -0.3 -0.2 -0.1 0 −25 0 25 50 75 100 Ambient temperature Ta 125 150 Common Source VDS = -3 V Ta = 25 °C 3 1 0.3 0.1 0.03 0.01 1 -1000 Drain current (°C) C – VDS 5000 -100 -10 ID -10000 (mA) Dynamic Input Characteristic -10 300 100 50 30 -8 VGS 500 Gate-Source voltage (pF) C Ciss 1000 Capacitance (V) 3000 Coss Crss Common Source Ta = 25 °C f = 1 MHz VGS = 0 V 10 -0.1 -1 -10 Drain – Source voltage VDD = -16 V -4 -2 0 -100 VDS -6 Common Source ID = -4.0 A Ta = 25 °C 0 10 20 30 40 50 Total gate charge (V) Qg 60 70 (nC) t – ID IDR – VDS 1000 100 Common Source (A) VGS = 0 V Ta = 25 °C Drain reverse current Switching time ton 10 1 0.01 tr Drain current 1 ID 10 IDR G S -2 -1 0 0.1 D -3 t (ns) tf -4 IDR Common Source VDD = -10 V VGS = 0 ∼ -2.5 V Ta = 25 °C RG = 4.7 Ω toff 0 0.2 0.4 0.6 Drain-Source voltage (A) 4 0.8 VDS 1.0 (V) 2007-11-01 SSM3J120TU PD - Ta 1000 a: mounted on FR4 board (25.4mm×25.4mm×1.6mm) Cu Pad :25.4mm×25.4mm b:mounted on ceramic board (25.4mm×25.4mm×0.8mm) Cu Pad :25.4mm×25.4mm b 600 a 400 200 0 0 20 40 60 80 100 120 140 160 A mbient temperature Ta(°C) Rth - tw 1000 c Transient thermal impedance Rth(°C/W) Drain power dissipation PD(mW) 800 b 100 a Single pulse a:Mounted on ceramic board (25.4mm×25.4mm×0.8mm) Cu Pad :25.4mm×25.4mm b:Mounted on FR4 board (25.4mm×25.4mm×1.6mm) Cu Pad :25.4mm×25.4mm c:Mounted on FR4 Board (25.4mm×25.4mm×1.6mm) Cu Pad :0.45mm×0.8mm×3 10 1 0.001 0.01 0.1 1 10 Pulse width tw (S) 5 100 1000 2007-11-01 SSM3J120TU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01