TOSHIBA SSM3J120TU

SSM3J120TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J120TU
○ Power Management Switch Applications
○ High-Current Switching Applications
Unit: mm
1.5 V drive
Low on-resistance
2.1±0.1
Ron = 140 mΩ (max) (@VGS = -1.5 V)
Ron = 78 mΩ (max) (@VGS = -1.8 V)
Ron = 49 mΩ (max) (@VGS = -2.5 V)
Ron = 38 mΩ (max) (@VGS = -4.0 V)
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
VDS
-20
V
V
VGSS
±8
DC
ID
-4.0
Pulse
IDP
-8.0
PD (Note 1)
800
PD (Note 2)
500
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55~150
°C
Gate-Source voltage
Drain current
Drain power dissipation
+0.1
0.3 -0.05
1
3
2
0.7±0.05
Absolute Maximum Ratings (Ta = 25°C)
0.166±0.05
2.0±0.1
1.7±0.1
0.65±0.05
•
•
A
mW
UFM
1. Gate
2. Source
3. Drain
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
―
high temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2U1A
operating temperature/current/voltage, etc.) are within the
Weight: 6.6mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1 : Mounted on ceramic board
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2)
Note 2 : Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C)
Characteristics
Drain-Source breakdown voltage
Symbol
Test Condition
Min
Typ.
Max
V (BR) DSS ID = −1 mA, VGS = 0
−20
⎯
⎯
V (BR) DSX ID = −1 mA, VGS = +8 V
−12
⎯
⎯
Unit
V
Drain cut-off current
IDSS
VDS = −20 V, VGS = 0
⎯
⎯
−10
μA
Gate leakage current
IGSS
VGS = ±8 V, VDS = 0
⎯
⎯
±1
μA
−0.3
⎯
−1.0
V
6.1
12.1
⎯
S
Gate threshold voltage
Forward transfer admittance
Drain-Source ON-resistance
Vth
VDS = −3 V, ID = −1 mA
⏐Yfs⏐
VDS = -3 V, ID = -2.0 A
RDS (ON)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Switching time
(Note 3)
ID = -3.0 A, VGS = -4.0 V
(Note 3)
⎯
28
38
ID = -2.0 A, VGS = -2.5 V
(Note 3)
⎯
34
49
ID = -1.0 A, VGS = -1.8 V
(Note 3)
⎯
47
78
ID = -0.3 A, VGS = -1.5 V
(Note 3)
VDS = −10 V, VGS = 0
f = 1 MHz
Turn-on time
ton
VDD = −10 V, ID = −2.0 A
Turn-off time
toff
VGS = 0 ~ −2.5 V, RG = 4.7 Ω
1
mΩ
⎯
60
140
⎯
1484
⎯
pF
⎯
185
⎯
pF
⎯
169
⎯
pF
⎯
67
⎯
⎯
92
⎯
ns
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SSM3J120TU
Characteristics
Symbol
Total gate charge
Qg
Gate-Source charge
Qgs
Gate-Drain charge
Qgd
Drain-Source forward voltage
VDSF
Test Condition
VDS = −16 V, IDS = −4.0 A,
VGS = −4.0 V,
ID = 4.0 A, VGS = 0
(Note 3)
Min
Typ.
Max
⎯
22.3
⎯
⎯
14.9
⎯
⎯
7.3
⎯
⎯
0.8
1.2
Unit
nC
V
Note 3: Pulse test
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
0V
10%
OUT
0
IN
90%
−2.5 V
RG
−2.5V
10 μs
RL
(c) VOUT
VDD
VDD = -10 V
RG = 4.7 Ω
D.U. <
= 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25 °C
Marking
VDS (ON)
90%
10%
VDD
tr
ton
tf
toff
Equivalent Circuit (top view)
3
3
JJB
1
2
1
2
Precaution
Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = -1mA
for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a
lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Be sure to take this into consideration when using the device.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the
environment is protected against static electricity. Operators should wear anti-static clothing, and containers
and other objects that come into direct contact with devices should be made of anti-static materials.
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SSM3J120TU
ID – VDS
-8
-2.5 V
-1.8 V
ID – VGS
-10000
Common Source
VDS = -3 V
-1.5 V
(mA)
-100
ID
-4
Drain current
Drain current
ID
(A)
-1000
-6
VGS = -1.2 V
-2
-10
Ta = 85 °C
−25 °C
-1
25 °C
-0.1
0
Common Source
Ta = 25 °C
0
-0.5
-1
-1.5
Drain - Source voltage
VDS
-0.01
0
-2
-0.2
(V)
-0.4
Drain – Source on-resistance
RDS (ON) (mΩ)
Drain – Source on-resistance
RDS (ON) (mΩ)
60
50
25 °C
Ta = 85 °C
30
20
−25 °C
10
0
-2
-4
-6
Gate - Source voltage
(V)
Common Source
60
50
25 °C
40
Ta = 85 °C
30
20
−25 °C
10
0
VGS (V)
-2
-4
-6
Gate - Source voltage
RDS (ON) – ID
-8
VGS (V)
RDS (ON) – Ta
100
Common Source
80
Common Source
Ta = 25 °C
Drain – Source on-resistance
RDS (ON) (mΩ)
Drain – Source on-resistance
RDS (ON) (mΩ)
-1.6
70
0
-8
90
70
60
VGS = -1.5 V
50
-1.8 V
40
-2.5 V
30
-4.0 V
20
10
0
VGS
-1.4
ID = -2.0 A
80
70
0
-1.2
RDS (ON) – VGS
Common Source
40
-1.0
90
ID = -0.3 A
80
-0.8
Gate - Source voltage
RDS (ON) – VGS
90
-0.6
80
ID = -0.3 A / VGS = -1.5 V
-1.0 A / -1.8 V
60
40
-3.0 A / -4.0 V
20
-2.0 A / -2.5 V
0
-2
-4
Drain current
-6
ID
0
−50
-8
(A)
0
50
Ambient temperature
3
100
Ta
150
(°C)
2007-11-01
SSM3J120TU
Vth (V)
Gate threshold voltage
Common Source
-0.7
-0.5
VDS = -3 V
ID = -1 mA
10
Forward transfer admittance
-0.6
(S)
|Yfs| – ID
30
⎪Yfs⎪
Vth – Ta
-0.8
-0.4
-0.3
-0.2
-0.1
0
−25
0
25
50
75
100
Ambient temperature
Ta
125
150
Common Source
VDS = -3 V
Ta = 25 °C
3
1
0.3
0.1
0.03
0.01
1
-1000
Drain current
(°C)
C – VDS
5000
-100
-10
ID
-10000
(mA)
Dynamic Input Characteristic
-10
300
100
50
30
-8
VGS
500
Gate-Source voltage
(pF)
C
Ciss
1000
Capacitance
(V)
3000
Coss
Crss
Common
Source
Ta = 25 °C
f = 1 MHz
VGS = 0 V
10
-0.1
-1
-10
Drain – Source voltage
VDD = -16 V
-4
-2
0
-100
VDS
-6
Common Source
ID = -4.0 A
Ta = 25 °C
0
10
20
30
40
50
Total gate charge
(V)
Qg
60
70
(nC)
t – ID
IDR – VDS
1000
100
Common Source
(A)
VGS = 0 V
Ta = 25 °C
Drain reverse current
Switching time
ton
10
1
0.01
tr
Drain current
1
ID
10
IDR
G
S
-2
-1
0
0.1
D
-3
t
(ns)
tf
-4
IDR
Common Source
VDD = -10 V
VGS = 0 ∼ -2.5 V
Ta = 25 °C
RG = 4.7 Ω
toff
0
0.2
0.4
0.6
Drain-Source voltage
(A)
4
0.8
VDS
1.0
(V)
2007-11-01
SSM3J120TU
PD - Ta
1000
a: mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
b:mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
b
600
a
400
200
0
0
20
40
60
80
100
120
140
160
A mbient temperature Ta(°C)
Rth - tw
1000
c
Transient thermal impedance Rth(°C/W)
Drain power dissipation PD(mW)
800
b
100
a
Single pulse
a:Mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
b:Mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
c:Mounted on FR4 Board
(25.4mm×25.4mm×1.6mm)
Cu Pad :0.45mm×0.8mm×3
10
1
0.001
0.01
0.1
1
10
Pulse width tw　(S)
5
100
1000
2007-11-01
SSM3J120TU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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