NEC 3P6MH

DATA SHEET
THYRISTORS
3P4MH, 3P6MH
3 A MOLD SCR
The 3P4MH and 3P6MH are P-gate fully diffused mold
PACKAGE DRAWING (UNIT: mm)
SCRs with an average on-current of 3 A. The repeat peak offvoltages (and reverse voltages) are 400 V and 600 V.
FEATURES
• This transistor features a small and lightweight package and
is easy to handle even on the mounting surface due to its
TO-202AA dimensions. Processing of lead wires and
heatsink (tablet) using jigs is also possible.
• Employs flame-retardant epoxy resin (UL94V-0).
APPLICATIONS
Noncontact switches of consumer electronic euipments,
electric equipments, audio quipments, and light indutry
equipements
Electrode connection
<1>Cathode
<2>Anode
<3>Gate
Standard weight: 1.4
*TC test bench-mark
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Parameter
Symbol
Non-repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak off-voltage
Average on-state current
Effective on-state current
Surge on-state current
VRSM
VDSM
VRRM
VDRM
IT(AV)
IT(RMS)
ITSM
Fusing current
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward current
Peak gate reverse voltage
Junction temperature
Storage temperature
∫ it dt
dIT/dt
PGM
PG(AV)
IFGM
VRGM
Tj
Tstg
2
3P4MH
3P6MH
500
700
500
700
400
600
400
600
3 (Tc = 87°C, Single half-wave, θ = 180°)
4.7
65 (f = 50 Hz, Sine half-wave, 1 cycle)
70 (f = 60 Hz, Sine half-wave, 1 cycle)
20 (1 ms≤t≤10 ms)
50
2 (f≥50 Hz, Duty≤10%)
0.2
1 (f≥50 Hz, Duty≤10%)
6
−40 to +125
−55 tp +150
Ratings
Unit
V
V
V
V
A
A
A
RGK = 1 kΩ
RGK = 1 kΩ
RGK = 1 kΩ
RGK = 1 kΩ
Refer to Figure 11.
−
Refer to Figure 2.
A2s
A/µs
W
W
A
V
°C
°C
−
−
Refer to Figure 3.
−
−
−
−
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13533EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
3P4MH, 3P6MH
ELECTRICAL CHARACTERISTICS (Tj = 25°°C, RGK = 1 kΩ
Ω)
Parameter
Symbol
Repeat peak reverse
current
IRRM
Repeat peak off-current
IDRM
Critical rate-of-rise of offstate voltage
dV/dt
Conditions
VRM = VRRM
VDM = VDRM
Tj = 125°C, VDM =
Specifications
Unit
Remarks
MIN.
TYP.
MAX.
Tj = 25°C
−
−
100
µA
−
Tj = 125°C
−
−
2
mA
−
Tj = 25°C
−
−
100
µA
−
Tj = 125°C
−
−
2
mA
−
2
VDRM
3
−
3
−
V/µs
−
On-state voltage
VTM
IT = 10 A
−
−
1.6
V
Refer to Figure 1.
Gate trigger current
IGT
VDM = 6 V, RL = 100 Ω
−
−
0.2
mA
Refer to Figure 14.
Gate trigger voltage
VGT
VDM = 6 V, RL = 100 Ω
−
−
0.8
V
Gate non-trigger voltage
VGD
Tj = 125°C,
VDRM
VDM =
2
0.2
−
−
V
−
Holding current
IH
VDM = 24 V, ITM = 10 A
−
1
5
mA
−
Commutating turn-off time
Tq
Tj = 125°C,
IT = 3 A, diR/dt = 15 A/µs
VR≥25 V, VDM = 23 VDRM
−
80
−
µs
−
°C/W
Refer to Figure 13.
dVD/dt = 1 V/µs
Thermal resistance
Rth(j-c)
Junction-to-case DC
−
−
8
Rth(j-a)
Junction-to-ambient DC
−
−
75
TYPICAL CHARACTERISTICS (Ta = 25°°C)
2
Data Sheet D13533EJ3V0DS
3P4MH, 3P6MH
Data Sheet D13533EJ3V0DS
3
3P4MH, 3P6MH
4
Data Sheet D13533EJ3V0DS
3P4MH, 3P6MH
[MEMO]
Data Sheet D13533EJ3V0DS
5
3P4MH, 3P6MH 6MG
• The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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M8E 00. 4