MMBF5460LT1 JFET − General Purpose Transistor P−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Gate Voltage VDG 40 Vdc Reverse Gate−Source Voltage VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit 225 1.8 mW mW/°C RqJA 556 °C/W TJ, Tstg −55 to +150 °C Forward Gate Current 3 GATE 1 DRAIN THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 3 PD 1 2 SOT−23 (TO−236) CASE 318 STYLE 10 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. MARKING DIAGRAM M6E M G G 1 M6E = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † MMBF5460LT1 SOT−23 3,000 / Tape & Reel MMBF5460LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 2 1 Publication Order Number: MMBF5460LT1/D MMBF5460LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)GSS 40 − − Vdc − − − − 5.0 1.0 nAdc mAdc OFF CHARACTERISTICS Gate−Source Breakdown Voltage (IG = 10 mAdc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 100°C) IGSS Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 mAdc) VGS(off) 0.75 − 6.0 Vdc Gate Source Voltage (VDS = 15 Vdc, ID = 0.1 mAdc) VGS 0.5 − 4.0 Vdc IDSS −1.0 − −5.0 mAdc Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |Yfs| 1000 − 4000 mmhos Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |yos| − − 75 mmhos Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss − 5.0 7.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss − 1.0 2.0 pF ON CHARACTERISTICS Zero−Gate−Voltage Drain Current (VDS = 15 Vdc, VGS = 0) SMALL−SIGNAL CHARACTERISTICS http://onsemi.com 2 MMBF5460LT1 4.0 VDS = 15 V 3.5 I D, DRAIN CURRENT (mA) FORWARD TRANSFER ADMITTANCE versus DRAIN CURRENT 3.0 2.5 TA = −55°C 2.0 25°C 1.5 125°C 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VGS, GATE−SOURCE VOLTAGE (VOLTS) 1.8 2.0 Yfs FORWARD TRANSFER ADMITTANCE m ( mhos) DRAIN CURRENT versus GATE SOURCE VOLTAGE 4000 3000 2000 1000 700 500 VDS = 15 V f = 1.0 kHz 300 200 0.2 10 I D, DRAIN CURRENT (mA) 8.0 TA = −55°C 7.0 6.0 25°C 125°C 5.0 4.0 3.0 2.0 1.0 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 VGS, GATE−SOURCE VOLTAGE (VOLTS) 3.5 4.0 7000 5000 3000 2000 1000 VDS = 15 V f = 1.0 kHz 700 500 0.5 0.7 16 12 TA = −55°C 10 8.0 25°C 125°C 6.0 4.0 2.0 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS, GATE−SOURCE VOLTAGE (VOLTS) 2.0 3.0 ID, DRAIN CURRENT (mA) 5.0 7.0 10000 VDS = 15 V 14 1.0 Figure 5. VGS(off) = 4.0 Volts 7.0 Yfs FORWARD TRANSFER ADMITTANCE m ( mhos) Figure 2. VGS(off) = 4.0 Volts I D, DRAIN CURRENT (mA) 3.0 10000 VDS = 15 V 9.0 0 2.0 Figure 4. VGS(off) = 2.0 Volts Yfs FORWARD TRANSFER ADMITTANCE m ( mhos) Figure 1. VGS(off) = 2.0 Volts 0 1.0 0.5 0.7 ID, DRAIN CURRENT (mA) 0.3 8.0 7000 5000 3000 2000 1000 VDS = 15 V f = 1.0 kHz 700 500 0.5 Figure 3. VGS(off) = 5.0 Volts 0.7 1.0 2.0 3.0 ID, DRAIN CURRENT (mA) 5.0 Figure 6. VGS(off) = 5.0 Volts http://onsemi.com 3 7.0 10 MMBF5460LT1 10 VDS = 15 V f = 1.0 kHz 8.0 IDSS = 3.0 mA 100 70 50 6.0 mA 10 mA 30 C, CAPACITANCE (pF) 200 7.0 6.0 Ciss 5.0 4.0 3.0 2.0 20 10 0.1 f = 1.0 MHz VGS = 0 9.0 300 Coss 1.0 0.2 0.5 1.0 2.0 ID, DRAIN CURRENT (mA) 5.0 0 10 Crss 0 10 20 30 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Figure 7. Output Resistance versus Drain Current Figure 8. Capacitance versus Drain−Source Voltage 10 9.0 NF, NOISE FIGURE (dB) r oss , OUTPUT RESISTANCE (k ohms) 1000 700 500 VDS = 15 V VGS = 0 f = 100 Hz 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 1.0 10 100 1000 RS, SOURCE RESISTANCE (k Ohms) 10,000 Figure 9. Noise Figure versus Source Resistance COMMON SOURCE y PARAMETERS FOR FREQUENCIES BELOW 30 MHz vi Crss Ciss ross Coss | yfs | vi yis = jW Ciss yos = jW Cosp * + 1/ross yfs = yfs | yrs = −jW Crss *Cosp is Coss in parallel with Series Combination of Ciss and Crss. NOTE: 1. Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Figure 10. Equivalent Low Frequency Circuit http://onsemi.com 4 40 MMBF5460LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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