JFET General Purpose Transistor

MMBF5460LT1
JFET − General Purpose
Transistor
P−Channel
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Features
• Pb−Free Package is Available
2 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain−Gate Voltage
VDG
40
Vdc
Reverse Gate−Source Voltage
VGSR
40
Vdc
IGF
10
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/°C
RqJA
556
°C/W
TJ, Tstg
−55 to +150
°C
Forward Gate Current
3
GATE
1 DRAIN
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
3
PD
1
2
SOT−23 (TO−236)
CASE 318
STYLE 10
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
MARKING DIAGRAM
M6E M G
G
1
M6E = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping †
MMBF5460LT1
SOT−23
3,000 / Tape & Reel
MMBF5460LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
1
Publication Order Number:
MMBF5460LT1/D
MMBF5460LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)GSS
40
−
−
Vdc
−
−
−
−
5.0
1.0
nAdc
mAdc
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(IG = 10 mAdc, VDS = 0)
Gate Reverse Current
(VGS = 20 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 100°C)
IGSS
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 1.0 mAdc)
VGS(off)
0.75
−
6.0
Vdc
Gate Source Voltage
(VDS = 15 Vdc, ID = 0.1 mAdc)
VGS
0.5
−
4.0
Vdc
IDSS
−1.0
−
−5.0
mAdc
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|Yfs|
1000
−
4000
mmhos
Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|yos|
−
−
75
mmhos
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
−
5.0
7.0
pF
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Crss
−
1.0
2.0
pF
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
SMALL−SIGNAL CHARACTERISTICS
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2
MMBF5460LT1
4.0
VDS = 15 V
3.5
I D, DRAIN CURRENT (mA)
FORWARD TRANSFER ADMITTANCE
versus DRAIN CURRENT
3.0
2.5
TA = −55°C
2.0
25°C
1.5
125°C
1.0
0.5
0
0
0.2
0.4 0.6 0.8
1.0
1.2 1.4
1.6
VGS, GATE−SOURCE VOLTAGE (VOLTS)
1.8
2.0
Yfs FORWARD TRANSFER ADMITTANCE m
( mhos)
DRAIN CURRENT versus GATE
SOURCE VOLTAGE
4000
3000
2000
1000
700
500
VDS = 15 V
f = 1.0 kHz
300
200
0.2
10
I D, DRAIN CURRENT (mA)
8.0
TA = −55°C
7.0
6.0
25°C
125°C
5.0
4.0
3.0
2.0
1.0
4.0
0
0.5
1.0
1.5
2.0
2.5
3.0
VGS, GATE−SOURCE VOLTAGE (VOLTS)
3.5
4.0
7000
5000
3000
2000
1000
VDS = 15 V
f = 1.0 kHz
700
500
0.5
0.7
16
12
TA = −55°C
10
8.0
25°C
125°C
6.0
4.0
2.0
0
1.0
2.0
3.0
4.0
5.0
6.0
VGS, GATE−SOURCE VOLTAGE (VOLTS)
2.0
3.0
ID, DRAIN CURRENT (mA)
5.0
7.0
10000
VDS = 15 V
14
1.0
Figure 5. VGS(off) = 4.0 Volts
7.0
Yfs FORWARD TRANSFER ADMITTANCE m
( mhos)
Figure 2. VGS(off) = 4.0 Volts
I D, DRAIN CURRENT (mA)
3.0
10000
VDS = 15 V
9.0
0
2.0
Figure 4. VGS(off) = 2.0 Volts
Yfs FORWARD TRANSFER ADMITTANCE m
( mhos)
Figure 1. VGS(off) = 2.0 Volts
0
1.0
0.5
0.7
ID, DRAIN CURRENT (mA)
0.3
8.0
7000
5000
3000
2000
1000
VDS = 15 V
f = 1.0 kHz
700
500
0.5
Figure 3. VGS(off) = 5.0 Volts
0.7
1.0
2.0
3.0
ID, DRAIN CURRENT (mA)
5.0
Figure 6. VGS(off) = 5.0 Volts
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3
7.0
10
MMBF5460LT1
10
VDS = 15 V
f = 1.0 kHz
8.0
IDSS = 3.0 mA
100
70
50
6.0 mA
10 mA
30
C, CAPACITANCE (pF)
200
7.0
6.0
Ciss
5.0
4.0
3.0
2.0
20
10
0.1
f = 1.0 MHz
VGS = 0
9.0
300
Coss
1.0
0.2
0.5
1.0
2.0
ID, DRAIN CURRENT (mA)
5.0
0
10
Crss
0
10
20
30
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 7. Output Resistance
versus Drain Current
Figure 8. Capacitance versus
Drain−Source Voltage
10
9.0
NF, NOISE FIGURE (dB)
r oss , OUTPUT RESISTANCE (k ohms)
1000
700
500
VDS = 15 V
VGS = 0
f = 100 Hz
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
1.0
10
100
1000
RS, SOURCE RESISTANCE (k Ohms)
10,000
Figure 9. Noise Figure versus
Source Resistance
COMMON SOURCE
y PARAMETERS FOR FREQUENCIES
BELOW 30 MHz
vi
Crss
Ciss
ross
Coss
| yfs | vi
yis = jW Ciss
yos = jW Cosp * + 1/ross
yfs = yfs |
yrs = −jW Crss
*Cosp is Coss in parallel with Series Combination of Ciss and Crss.
NOTE:
1. Graphical data is presented for dc conditions. Tabular data is given
for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%).
Figure 10. Equivalent Low Frequency Circuit
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4
40
MMBF5460LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
e
q
A
L
A1
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBF5460LT1/D