Order this document by 2N5460/D SEMICONDUCTOR TECHNICAL DATA P–Channel — Depletion 2 DRAIN 3 GATE 1 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IG(f) 10 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 350 2.8 mW mW/°C Junction Temperature Range TJ – 65 to +135 °C Tstg – 65 to +150 °C Reverse Gate – Source Voltage Forward Gate Current Storage Channel Temperature Range 1 2 3 CASE 29–04, STYLE 7 TO–92 (TO–226AA) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)GSS 40 — — Vdc 2N5460, 2N5461, 2N5462 — — 5.0 nAdc 2N5460, 2N5461, 2N5462 — — 1.0 µAdc 0.75 1.0 1.8 — — — 6.0 7.5 9.0 Vdc 0.5 0.8 1.5 — — — 4.0 4.5 6.0 OFF CHARACTERISTICS Gate – Source Breakdown Voltage (IG = 10 µAdc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 30 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 100°C) (VGS = 30 Vdc, VDS = 0, TA = 100°C) 2N5460, 2N5461, 2N5462 IGSS Gate – Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 µAdc) 2N5460 2N5461 2N5462 Gate – Source Voltage (VDS = 15 Vdc, ID = 0.1 mAdc) (VDS = 15 Vdc, ID = 0.2 mAdc) (VDS = 15 Vdc, ID = 0.4 mAdc) 2N5460 2N5461 2N5462 VGS(off) VGS Vdc ON CHARACTERISTICS Zero – Gate –Voltage Drain Current (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 2N5460 2N5461 2N5462 IDSS – 1.0 – 2.0 – 4.0 — — — – 5.0 – 9.0 – 16 mAdc 2N5460 2N5461 2N5462 yfs 1000 1500 2000 — — — 4000 5000 6000 mmhos Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) yos — — 75 mmhos Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss — 5.0 7.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss — 1.0 2.0 pF Noise Figure (VDS = 15 Vdc, VGS = 0, RG = 1.0 Megohm, f = 100 Hz, BW = 1.0 Hz) NF — 1.0 2.5 dB Equivalent Short–Circuit Input Noise Voltage (VDS = 15 Vdc, VGS = 0, f = 100 Hz, BW = 1.0 Hz) en — 60 115 nVń ǸHz SMALL– SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) FUNCTIONAL CHARACTERISTICS Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 1 FORWARD TRANSFER ADMITTANCE versus DRAIN CURRENT 4.0 VDS = 15 V I D, DRAIN CURRENT (mA) 3.5 3.0 2.5 TA = – 55°C 2.0 25°C 1.5 125°C 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VGS, GATE–SOURCE VOLTAGE (VOLTS) 1.8 2.0 Yfs FORWARD TRANSFER ADMITTANCE (m mhos) DRAIN CURRENT versus GATE SOURCE VOLTAGE 4000 3000 2000 1000 700 500 VDS = 15 V f = 1.0 kHz 300 200 0.2 10 I D, DRAIN CURRENT (mA) 8.0 TA = – 55°C 7.0 6.0 25°C 125°C 5.0 4.0 3.0 2.0 1.0 4.0 0 0.5 1.5 2.0 2.5 3.0 1.0 VGS, GATE–SOURCE VOLTAGE (VOLTS) 3.5 4.0 7000 5000 3000 2000 1000 VDS = 15 V f = 1.0 kHz 700 500 0.5 0.7 1.0 2.0 3.0 ID, DRAIN CURRENT (mA) 5.0 7.0 Figure 5. VGS(off) = 4.0 Volts 16 Yfs FORWARD TRANSFER ADMITTANCE (m mhos) Figure 2. VGS(off) = 4.0 Volts 10000 VDS = 15 V 14 I D, DRAIN CURRENT (mA) 3.0 10000 VDS = 15 V 9.0 12 TA = – 55°C 10 8.0 25°C 125°C 6.0 4.0 2.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS, GATE–SOURCE VOLTAGE (VOLTS) Figure 3. VGS(off) = 5.0 Volts 2 2.0 Figure 4. VGS(off) = 2.0 Volts Yfs FORWARD TRANSFER ADMITTANCE (m mhos) Figure 1. VGS(off) = 2.0 Volts 0 1.0 0.5 0.7 ID, DRAIN CURRENT (mA) 0.3 7.0 8.0 7000 5000 3000 2000 1000 VDS = 15 V f = 1.0 kHz 700 500 0.5 0.7 1.0 2.0 3.0 ID, DRAIN CURRENT (mA) 5.0 7.0 10 Figure 6. VGS(off) = 5.0 Volts Motorola Small–Signal Transistors, FETs and Diodes Device Data 10 VDS = 15 V f = 1.0 kHz 8.0 300 200 IDSS = 3.0 mA 100 70 50 6.0 mA 10 mA 30 7.0 6.0 Ciss 5.0 4.0 3.0 2.0 20 10 0.1 f = 1.0 MHz VGS = 0 9.0 C, CAPACITANCE (pF) r oss , OUTPUT RESISTANCE (k ohms) 1000 700 500 Coss 1.0 Crss 0 0.2 0.5 1.0 2.0 ID, DRAIN CURRENT (mA) 5.0 0 10 Figure 7. Output Resistance versus Drain Current 40 Figure 8. Capacitance versus Drain–Source Voltage 5.0 10 VDS = 15 V VGS = 0 RG = 1.0 Megohm 4.0 3.0 2.0 9.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 20 30 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) 1.0 VDS = 15 V VGS = 0 f = 100 Hz 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 10 20 30 50 100 200 300 500 1000 2000 3000 f, FREQUENCY (Hz) 0 1.0 10,000 Figure 9. Noise Figure versus Frequency 10 100 1000 RS, SOURCE RESISTANCE (k Ohms) Figure 10. Noise Figure versus Source Resistance COMMON SOURCE y PARAMETERS FOR FREQUENCIES BELOW 30 MHz vi Crss Ciss 10,000 ross Coss | yfs | vi yis = jω Ciss yos = jω Cosp * + 1/ross yfs = yfs | yrs = –jω Crss * Cosp is Coss in parallel with Series Combination of Ciss and Crss. NOTE: 1. Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Figure 11. Equivalent Low Frequency Circuit Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D X X G J H V C SECTION X–X 1 N N CASE 029–04 (TO–226AA) ISSUE AD INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 7: PIN 1. SOURCE 2. DRAIN 3. GATE Motorola reserves the right to make changes without further notice to any products herein. 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