Ordering number : ENA2008A TF408 N-Channel JFET http://onsemi.com 30V, 0.6 to 3.0mA, 5.0mS, USFP Applications • Low-Frequency general-purpose amplifier, impedance conversion, infrared sensor applications Features • • • • Ultrasmall package facilitates miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm) Small IGSS : max --1.0nA (VGS= --20V, VDS=0V) Small Ciss : typ 4pF (VDS= 10V, VGS=0V, f=1MHz) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSX VGDS Gate-to-Drain Voltage Gate Current 30 IG ID Drain Current Allowable Power Dissipation Junction Temperature PD Tj Storage Temperature Tstg V --30 V 10 mA 10 mA 30 mW 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7055-003 • Package : USFP • JEITA, JEDEC : • Minimum Packing Quantity : 10,000 pcs./reel 0.6 0.1 0.2 0.11 TF408-2-TL-H TF408-3-TL-H Packing Type: TL Marking 3 3 TL 2 0.15 A LOT No. 1 LOT No. 0.1 1.0 0.8 0 to 0.02 0.175 2 3 0.05 1 0.05 0.27 Electrical Connection 1 2 3 1 : Source 2 : Drain 3 : Gate USFP Semiconductor Components Industries, LLC, 2013 August, 2013 1 : Source 2 : Drain 3 : Gate 1 2 Top view 53012 TKIM/22912GB TKIM TC-00002704 No. A2008-1/6 TF408 Electrical Characteristics at Ta=25°C Parameter Symbol Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Drain Current V(BR)GDS IGSS VGS(off) IG=--10μA, VDS=0V VGS=--20V, VDS=0V VDS=10V, ID=1μA VDS=10V, VGS=0V Forward Transfer Admittance IDSS | yfs | Input Capacitance Ciss Reverse Transfer Capacitance Crss Ratings Conditions min typ Unit max --30 V --1.0 --0.18 --0.60 0.6* VDS=10V, VGS=0V, f=1kHz 3.0 nA --1.5 V 3.0* mA 5.0 VDS=10V, VGS=0V, f=1MHz mS 4 pF 1.1 pF * : The TF408 is classified by IDSS as follows : (unit : mA) Rank IDSS 2 0.6 to 1.5 3 1.2 to 3.0 Ordering Information Package Shipping TF408-2-TL-H Device USFP 10,000pcs./reel TF408-3-TL-H USFP 10,000pcs./reel ID -- VDS 3.0 ID -- VDS 2.5 2.0 Drain Current, ID -- mA Drain Current, ID -- mA Pb Free and Halogen Free 3.0 2.5 VGS=0V 1.5 --0.1V --0.2V 1.0 --0.3V 0.5 1 2 3 4 1.5 --0.2V 1.0 --0.3V --0.4V 5 10 15 20 25 30 Drain-to-Source Voltage, VDS -- V 3.5 VDS=10V 3.0 IT16771 ID -- VGS VDS=10V Drain Current, ID -- mA 3.0 3.0 m A 2.5 ID SS = 2.0 0m A 1.5 2. 1.0 A .0m 1 0.5 0 --1.0 --0.1V IT16770 ID -- VGS 3.5 2.0 0 0 5 Drain-to-Source Voltage, VDS -- V VGS=0V 0.5 --0.4V 0 0 Drain Current, ID -- mA memo --0.8 --0.6 --0.4 --0.2 Gate-to-Source Voltage, VGS -- V 2.5 2.0 1.5 1.0 °C 75 0 IT16772 0 --1.0 °C = Ta 0.5 °C 25 25 ---0.8 --0.6 --0.4 --0.2 Gate-to-Source Voltage, VGS -- V 0 IT16773 No. A2008-2/6 TF408 VGS(off) -- IDSS VDS=10V ID=1.0μA --1.0 --0.8 --0.6 --0.4 --0.2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Drain Current, IDSS -- mA Input Capacitance, Ciss -- pF 5 3 2 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V PD -- Ta Allowable Power Dissipation, PD -- mW 35 4 3 2 1 0 0.5 5 7 100 IT16776 1.0 1.5 2.0 2.5 3.0 Drain Current, IDSS -- mA 3.5 IT16775 Crss -- VDS 10 VGS=0V f=1MHz 7 1.0 0.1 5 IT16774 Ciss -- VDS 10 VDS=10V VGS=0V f=1kHz 6 0 3.5 Reverse Transfer Capacitance, Crss -- pF Cutoff Voltage, VGS(off) -- V --1.2 | yfs | -- IDSS 7 Forward Transfer Admittance, | yfs | -- mS --1.4 VGS=0V f=1MHz 7 5 3 2 1.0 7 5 3 2 0.1 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT16777 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16778 No. A2008-3/6 TF408 Taping Specification TF408-2-TL-H, TF408-3-TL-H No. A2008-4/6 TF408 Outline Drawing TF408-2-TL-H, TF408-3-TL-H Land Pattern Example Mass (g) Unit Unit: mm 0.95 0.3 0.25 (0.0005) mm 0.2 0.2 No. A2008-5/6 TF408 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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