Ordering number : ENA1616B TF256 N-Channel JFET http://onsemi.com 20V, 140 to 450μA, 1.7mS, USFP Features • • • • • • High gain : GV=2.7dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz) Ultrasmall package facilitates miniaturization in end products [1.0mm×0.6mm×0.27mm (max 0.3mm)] Best suited for use in electret condenser microphone for audio equipments and telephones Excellent transient characteristics Adoption of FBET process Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Gate-to-Drain Voltage Conditions Ratings Unit VGDO IG Gate Current Drain Current ID PD Allowable Power Dissipation Junction Temperature Tj Storage Temperature Tstg --20 V 10 mA 1 mA 30 mW 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7055-001 • Package : USFP • JEITA, JEDEC : • Minimum Packing Quantity : 10,000 pcs./reel 0.1 0.6 0.2 3 TF256-3-TL-H TF256-4-TL-H TF256-5-TL-H Packing Type: TL Marking 3 1.0 0.8 0 to 0.02 2 0.175 TL 0.15 2 3 0.05 1 0.05 0.27 Electrical Connection 1 N LOT No. 1 LOT No. 0.1 0.11 2 1 1 : Drain 2 : Source 3 : Gate 3 USFP 2 Semiconductor Components Industries, LLC, 2013 August, 2013 91212 TKIM/10511 TKIM TC-00002534/N2509GB TKIM TC-00002096 No. A1616-1/7 TF256 Electrical Characteristics at Ta=25°C Parameter Symbol Gate-to-Drain Breakdown Voltage V(BR)GDO VGS(off) Cutoff Voltage Drain Current IDSS Forward Transfer Admittance | yfs | Input Capacitance Ciss Reverse Transfer Capacitance Crss Ratings Conditions Rank IG=--100μA VDS=2V, ID=1μA min typ Unit max --20 --0.1 VDS=2V, VGS=0V V --0.35 --1.0 3 100 180 4 140 280 5 240 450 VDS=2V, VGS=0V, f=1kHz 0.75 VDS=2V, VGS=0V, f=1MHz V μA 1.7 mS 3.1 pF 1.0 pF [Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.] Voltage Gain GV Reduced Voltage Characteristic VIN=10mV, f=1kHz VIN=10mV, f=1kHz, VCC=2.0V → 1.5V ΔGVV Frequency Characteristic THD Output Noise Voltage 1.0 4 2.0 5 3.0 3 --0.5 --1.0 4 --0.6 --1.3 5 --0.9 --2.0 3 1.4 dB f=1kHz to 110Hz ΔGvf Total Harmonic Distortion 3 --1.0 VIN=30mV, f=1kHz VNO dB VIN=0V, A curve 4 0.9 5 0.35 dB % --105 --100 dB Test Circuit Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic 2.2kΩ VCC=2.0V VCC=1.5V 33μF + 5pF VTVM V THD OSC Ordering Information Package Shipping TF256-3-TL-H USFP 10,000pcs./reel TF256-4-TL-H USFP 10,000pcs./reel TF256-5-TL-H USFP 10,000pcs./reel ID -- VDS 150 --0.15V --0.20V --0.25V 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain-to-Source Voltage, VDS -- V 0μ A --0.10V 300 250 200 150 0μ A 200 350 30 Drain Current, ID -- μA --0.05V 100 VDS=2V 400 300 250 ID -- VGS 450 V GS=0V 350 Drain Current, ID -- μA 500 Pb Free and Halogen Free S= 45 400 memo ID S Device 0μ 100 --0.30V 4.5 5.0 IT15213 A 15 50 A 0μ 10 0 --0.50 --0.45 --0.40 --0.35 --0.30 --0.25 --0.20 --0.15 --0.10 --0.05 Gate-to-Source Voltage, VGS -- V 0 IT16271 No. A1616-2/7 TF256 ID -- VGS 450 Forward Transfer Admittance, | yfs | -- mS 350 300 250 25 °C 75 °C 200 Ta = Drain Current, ID -- μA 400 150 100 5 --2 50 °C 0 --0.50 --0.45 --0.40 --0.35 --0.30 --0.25 --0.20 --0.15 --0.10 --0.05 Gate-to-Source Voltage, VGS -- V 1.5 1.0 0.5 100 150 200 250 300 350 400 450 Drain Current, IDSS -- μA 500 IT16272 Ciss -- VDS 10 VGS=0V f=1MHz 7 0.40 Input Capacitance, Ciss -- pF Cutoff Voltage, VGS(off) -- V 2.0 0 50 0 VDS=2V ID=1μA 0.45 VDS=2V VGS=0V f=1kHz IT15215 VGS(off) -- IDSS 0.50 | yfs | -- IDSS 2.5 VDS=2V 0.35 0.30 0.25 0.20 0.15 0.10 5 3 2 0.05 0 50 100 150 200 250 300 350 400 450 Drain Current, IDSS -- μA 3.0 7 5 2 1.0 3 5 7 2 10 IT15218 GV : VCC=2V VIN=10mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V 2 1.0 7 GV -- IDSS 3.5 Voltage Gain, GV -- dB Reverse Transfer Capacitance, Crss -- pF 5 Drain-to-Source Voltage, VDS -- V VGS=0V f=1MHz 2.5 2.0 1.5 1.0 0.5 0 3 3 5 7 2 1.0 3 5 7 10 Drain-to-Source Voltage, VDS -- V GV : VIN=10mV f=1kHz RL=2.2kΩ Cin=5pF 5 450μA I DSS= 300μA 3 100μA 1 0 3 4 Supply Voltage, VCC -- V 5 6 IT16275 400 450 500 IT16274 450μA I DSS= 300μA 150μA 100μA --2 --4 --8 2 350 0 --6 1 300 2 --2 0 250 GV : VCC=2V VIN=10mV f=1kHz RL=2.2kΩ 4 --1 --3 200 GV -- Cin 6 150μA 2 150 10 8 4 100 Drain Current, IDSS -- μA Voltage Gain, GV -- dB 6 --0.5 50 2 IT15219 GV -- VCC 7 Voltage Gain, GV -- dB 3 IT16273 Crss -- VDS 3 1.0 500 --10 0 2 4 6 8 10 12 Electret Capacitance, Cin -- pF 14 16 IT16276 No. A1616-3/7 ΔGVV : VCC=2V→1.5V VIN=10mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 50 100 150 200 250 300 350 400 Drain Current, IDSS -- μA Total Harmonic Distortion, THD -- % THD : VCC=2V VIN=30mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 50 100 150 200 250 300 350 Drain Current, IDSS -- μA THD : VCC=2V f=1kHz RL=2.2kΩ Cin=5pF 3 2 100μ I DSS= 10 7 5 A 150μ 3 2 1.0 7 5 400 450 500 IT16279 A A 300μ A 450μ 3 2 0.1 500 THD -- VIN 100 7 5 0 50 100 150 Input Voltage, VIN -- mV IT16277 THD -- IDSS 2.4 450 Total Harmonic Distortion, THD -- % ΔGVV -- IDSS 0 PD -- Ta 35 Allowable Power Dissipation, PD -- mW Reduced Voltage Characteristic, ΔGVV -- dB TF256 200 IT16278 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15226 No. A1616-4/7 TF256 Taping Specification TF256-3-TL-H, TF256-4-TL-H, TF256-5-TL-H No. A1616-5/7 TF256 Outline Drawing TF256-3-TL-H, TF256-4-TL-H, TF256-5-TL-H Land Pattern Example Mass (g) Unit Unit: mm 0.95 0.3 0.25 (0.0005) mm 0.2 0.2 No. A1616-6/7 TF256 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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