Ordering number : ENA0841B TF252 N-Channel JFET http://onsemi.com 20V, 140 to 350μA, 1.4mS, USFP Features • • • • • • • • High gain : GV=1.0dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz) Ultrasmall package facilitates miniaturization in end products [1.0mm×0.6mm×0.27mm (max 0.3mm)] Best suited for use in Electret Condenser Microphone for audio equipments and telephones Excellent voltage characteristics Excellent transient characteristics Adoption of FBET process Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Gate-to-Drain Voltage Conditions Ratings Unit VGDO IG Gate Current Drain Current ID PD Allowable Power Dissipation Junction Temperature Tj Storage Temperature Tstg --20 V 10 mA 1 mA 30 mW 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7055-001 • Package : USFP • JEITA, JEDEC : • Minimum Packing Quantity : 10,000 pcs./reel 0.1 0.6 0.2 3 TF252-4-TL-H TF252-5-TL-H Packing Type: TL Marking 3 1.0 0.8 0 to 0.02 2 TL 0.15 2 3 0.05 1 0.05 0.27 Electrical Connection 1 D LOT No. 1 0.175 LOT No. 0.1 0.11 2 1 1 : Drain 2 : Source 3 : Gate 3 USFP 2 Semiconductor Components Industries, LLC, 2013 August, 2013 O1012 TKIM/92612 TKIM/70407GB TIIM TC-00000793 No. A0841-1/7 TF252 Electrical Characteristics at Ta=25°C Parameter Symbol Gate-to-Drain Breakdown Voltage Cutoff Voltage Drain Current Ratings Conditions min V(BR)GDO VGS(off) IG=--100μA VDS=2V, ID=1μA --0.1 VDS=2V, VGS=0V 140* Forward Transfer Admittance IDSS | yfs | Input Capacitance Ciss Reverse Transfer Capacitance Crss typ Unit max --20 VDS=2V, VGS=0V, f=1kHz 0.8 VDS=2V, VGS=0V, f=1MHz V --0.4 --1.0 V 350* μA 1.4 mS 3.1 pF 0.95 pF [Ta=25°C, VCC=2V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.] GV ΔGVV VIN=10mV, f=1kHz Reduced Voltage Characteristic Voltage Gain Frequency Characteristic ΔGvf f=1kHz to 110Hz Total Harmonic Distortion THD Output Noise Voltage VNO VIN=30mV, f=1kHz VIN=0V, A curve 1.0 VIN=10mV, f=1kHz, VCC=2.0V → 1.5V dB --0.6 --2.0 dB --1.0 dB --102 dB 0.65 % --106 * : The TF252 is classified by IDSS as follows : (unit : μA) Rank IDSS 4 140 to 240 5 210 to 350 Test Circuit Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic 2.2kΩ VCC=2V VCC=1.5V 33μF + 5pF VTVM V THD OSC Ordering Information Package Shipping TF252-4-TL-H Device USFP 10,000pcs./reel TF252-5-TL-H USFP 10,000pcs./reel ID -- VDS 300 Pb Free and Halogen Free ID -- VDS 350 V GS=0V 200 --0.05V 150 --0.10V 100 --0.15V 50 --0.25V V V GS=0 300 Drain Current, ID -- μA 250 Drain Current, ID -- μA memo --0.20V --0.30V 0 250 200 --0.1V 150 100 --0.2V 50 --0.4V --0.3V 0 0 0.5 1.0 1.5 Drain-to-Source Voltage, VDS -- V 2.0 IT12440 0 4 5 Drain-to-Source Voltage, VDS -- V 1 2 3 IT12441 No. A0841-2/7 TF252 ID -- VGS 400 ID -- VGS 400 VDS=2V 350 300 300 50 --0.5 --0.4 --0.3 --0.2 --0.1 Gate-to-Source Voltage, VGS -- V 1.3 1.2 1.1 150 200 250 300 350 25 °C 0 IT12443 VDS=2V ID=1μA --0.50 --0.45 --0.40 --0.35 --0.30 --0.20 100 400 150 Reverse Transfer Capacitance, Crss -- pF 7 5 3 2 250 300 350 400 IT12445 Crss -- VDS 3 VGS=0V f=1MHz 200 Zero-Gate Voltage Drain Current, IDSS -- μA IT12444 Ciss -- VDS 10 VGS=0V f=1MHz 2 1.0 7 5 3 1.0 5 7 2 1.0 3 5 7 2 10 Drain-to-Source Voltage, VDS -- V 5 3 GV -- IDSS GV : VCC=2V VIN=10mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V 0.8 0.6 0.4 0.2 0 --0.2 --0.4 100 150 200 250 300 350 Zero-Gate Voltage Drain Current, IDSS -- μA 400 IT12448 7 1.0 2 3 5 7 2 10 Drain-to-Source Voltage, VDS -- V IT12446 Reduced Voltage Characteristic, ΔGVV -- dB Voltage Gain, GV -- dB --0.1 --0.25 Zero-Gate Voltage Drain Current, IDSS -- μA 1.0 --0.2 --0.55 1.4 1.2 --0.3 VGS(off) -- IDSS --0.60 1.5 1.4 --0.4 Gate-to-Source Voltage, VGS -- V Cutoff Voltage, VGS(off) -- V Forward Transfer Admittance, ⏐yfs⏐ -- mS 1.6 --0.5 IT12442 VDS=2V VGS=0V f=1kHz 1.0 100 Input Capacitance, Ciss -- pF 0 --0.6 0 ⏐yfs⏐ -- IDSS 1.7 1.6 100 50 0 --0.6 1.8 150 5° C 100 200 --2 A 15 0μ 150 25 0μ A 50 200 250 75 °C μA 250 Ta = Drain Current, ID -- μA 350 ID SS = 3 Drain Current, ID -- μA VDS=2V 3 IT12447 ΔGVV -- IDSS --0.2 ΔGVV : VCC=2V 1.5V VIN=10mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 100 150 200 250 300 350 Zero-Gate Voltage Drain Current, IDSS -- μA 400 IT12449 No. A0841-3/7 TF252 THD -- VIN 10 7 5 3 2 350μA 1.0 7 5 3 2 0.1 0 50 100 150 Input Voltage, VIN -- mV Allowable Power Dissipation, PD -- mW 200 IT12450 PD -- Ta 35 THD -- IDSS 1.4 THD : VCC=2V f=1kHz RL=2.2kΩ Cin=5pF μA =150 IDSS : VDS=2V I DSS A 250μ Total Harmonic Distortion, THD -- % Total Harmonic Distortion, THD -- % 2 THD : VCC=2V VIN=30mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V 1.2 1.0 0.8 0.6 0.4 0.2 0 100 150 200 250 300 350 Zero-Gate Voltage Drain Current, IDSS -- μA 400 IT12451 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12452 No. A0841-4/7 TF252 Taping Specification TF252-4-TL-H, TF252-5-TL-H No. A0841-5/7 TF252 Outline Drawing TF252-4-TL-H, TF252-5-TL-H Land Pattern Example Mass (g) Unit Unit: mm 0.95 0.3 0.25 (0.0005) mm 0.2 0.2 No. A0841-6/7 TF252 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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