FW217A Ordering number : EN8994A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FW217A General-Purpose Switching Device Applications Features • • • • On-state resistance RDS(on)1=30mΩ (typ.) 4.5V drive Halogen free compliance Protection Diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit 35 V ±20 V 6 A A Drain Current (PW≤10s) ID IDP Duty cycle≤1% 6.5 Drain Current (PW≤10μs) IDP Duty cycle≤1% 24 A Allowable Power Dissipation When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s 1.8 W Total Dissipation PD PT 2.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Package Dimensions Product & Package Information unit : mm (typ) 7072-001 • Package : SOIC8 • JEITA, JEDEC : SC-87, SOT-96 • Minimum Packing Quantity : 2,500 pcs./reel 4.9 0.22 0.375 1 4 0.445 0.254 (GAGE PLANE) 0.175 1.55 1.375 1.27 Packing Type : TL 0.715 5 3.9 6.0 8 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Marking FW217 A LOT No. TL Electrical Connection 8 7 6 5 1 2 3 4 SANYO : SOIC8 http://semicon.sanyo.com/en/network 31412 TKIM/22212PA TKIM TC-00002682 No.8994-1/4 FW217A Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Ratings Conditions min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=35V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A 3 RDS(on)1 ID=6A, VGS=10V 30 39 mΩ RDS(on)2 ID=3A, VGS=4.5V 50 70 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 35 V 1.7 1 μA ±10 μA 2.6 V S 470 pF 70 pF Crss 35 pF Turn-ON Delay Time td(on) 8 ns Rise Time tr 34 ns Turn-OFF Delay Time td(off) 31 ns Fall Time tf 30 ns Total Gate Charge Qg 10 nC Gate-to-Source Charge Qgs 2 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=20V, f=1MHz See specified Test Circuit. VDS=20V, VGS=10V, ID=6A 2 IS=6A, VGS=0V 0.84 nC 1.2 V Switching Time Test Circuit 10V 0V VDD=20V VIN ID=6A RL=3Ω VIN D PW=10μs D.C.≤1% VOUT G FW217A P.G 50Ω ID -- VDS 4.5 V 4.0 V 3.5V 9 8 2 6 5 4 3 VGS=2.5V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 25° 2 1 --25°C 3.0V 7 Ta=75° C 3 0 VDS=10V C 4 ID -- VGS 10 Drain Current, ID -- A 5 6.0V 16.0V 10.0V 6 Drain Current, ID -- A S 1 1.0 IT16778 0 0 1 4 5 Gate-to-Source Voltage, VGS -- V 2 3 IT16779 No.8994-2/4 FW217A RDS(on) -- VGS ID=3A 80 6A 60 40 20 0 0 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 20 --40 --20 0 20 40 60 80 100 120 140 160 IT16781 IS -- VSD 10 7 5 VGS=0V C °C -25 = Ta °C 75 1.0 7 5 3 2 25°C --25°C 1.0 7 5 °C 25° 2 Ta=7 5 Forward Transfer Admittance, | yfs | -- S 3 0.1 7 5 3 3 2 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 SW Time -- ID 100 0.01 5 7 10 IT16784 Drain Current, ID -- A 5 0.6 td(on) 7 tr 3 0.8 1.0 1.2 IT16783 Ciss, Coss, Crss -- VDS f=1MHz 7 Ciss, Coss, Crss -- pF tf 5 0.4 Ciss 5 3 10 0.2 1000 td(off) 2 0 Diode Forward Voltage, VSD -- V VDD=20V 7 Switching Time, SW Time -- ns =10.0 VGS 3 2 0.1 0.01 3 2 100 Coss 7 5 Crss 3 2 2 1.0 0.1 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A VGS -- Qg 10 10 7 10 IT16784 100 7 5 3 2 Drain Current, ID -- A 8 7 6 5 4 3 2 1 0 2 4 6 Total Gate Charge, Qg -- nC 8 10 IT16786 5 0 10 15 20 25 30 Drain-to-Source Voltage, VDS -- V VDS=10V ID=4.5A 9 Gate-to-Source Voltage, VGS -- V =6.0A V, I D 40 Ambient Temperature, Ta -- °C 5 0 A =3.0 V, I D 5 . 4 = VGS 60 0 --60 16 VDS=10V 7 80 IT16780 | yfs | -- ID 10 RDS(on) -- Ta 100 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 100 10 7 5 3 2 ASO IDP=24A(PW≤10μs) 10 0μ 1m s 10 s 10 ms 0m s DC 10 s op er ati on Operation in this area is limited by RDS(on). ID=6A 1.0 7 5 3 2 0.1 7 5 3 2 35 IT16785 Ta=25°C Single pulse 1unit When mounted on ceramic substrate (2000mm2×0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT16787 No.8994-3/4 FW217A 2.2 2.0 1.8 1.6 tal To 1.4 a ip ss di 1.2 1u 1.0 ni t n tio Allowable Power Dissipation, PD -- W When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT16789 Allowable Power Dissipation(FET1), PD -- W PD -- Ta 2.4 PD (FET1) -- PD (FET2) 2.4 When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Allowable Power Dissipation(FET2), PD -- W 2.2 2.4 IT16790 Note on usage : Since the FW217A is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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