NGTB05N60R2DT4G RC-IGBT Application Note For Refrigerator compressor, fan motor 1. At the beginning RC-IGBT is the abbreviation of Reverse Conducting Insulated Gate Bipolar Transistor, which is an IGBT that incorporates FWD into one chip. Like inverter circuit, the needed IGBT and FWD are housed in one chip; this enables package downsizing and thermal balance. This paper introduces the operation application of RC-IGBT in DPak. www.onsemi.com RC-IGBT: diode is formed due to the formation of a part of backside with N+(high-concentration N-layer). Collector (C) is cathode, Emitter (E) is anode, so it can be functioned as FWD of IGBT. Surely, as a diode, it is designed high-speed that ensures trr<75ns and high-speed switching performance. Furthermore, RC-IGBT adopts our original FS2 structure; this process is called RC2-IGBT 2. Cross-section structure of RC-IGBT and IGBT (general explanation) Table.1 shows the similarities and differences between RC-IGBT and IGBT in structure and operation. Table.1 Structural comparison between RC-IGBT and IGBT Chip structure RC-IGBT IGBT For FRD area, a part of backside P+ layer is replaced with N+ layer The entire backside is formed by P+ layer. FRD is a separate chip Circuit symbol Chip cross-section (explain with ordinary structure) Emitter metal Emitter metal P+ P+ P- P- N N IGBT Area P+ IGBT Area N+ IGBT contact © Semiconductor Components Industries, LLC, 2014 December 2014- Rev. 0 FRD Area P+ Diode contact 1 IGBT contact Publication Order Number: ANDNGTB05N60R2DT4G/D NGTB05N60R2DT4G Application Note 3. High-speed SW performance of RC2-IGBT Sample waveforms are shown in WP.1 and WP.2. WP.1 is tf waveform @5A operation for RC2IGBT. Compared with WP.2 (10A NPT), RC2IGBT realized high speed and tf tailing-less operation. FS2 process is by nature developed by ON Semi to be used for high-speed switching IGBT, for example, IGBT for full-switching PFC. By adopting this structure in RC2-IGBT, tf is greatly improved (faster speed) compared with earliertype (NPT structure) IGBT. Ic-1A/div Ic tailing VCE-100V/div WP.1 FS2-IGBT Ic=5A tf=31.2ns WP.2 NPT-IGBT Ic=5A tf=102ns 4. RC2-IGBT products lineup With compact package, Ic rating ranges from Ic=4.5A (NGTB03N60R2DT4G) to Ic=10A (NGTB10N60R2DT4G). RC2-IGBT features small size by housing IGBT and FRD into 1chip, therefore ON Semi provides its lineup with a focus on DPak products. Table.2 RC2-IGBT Lineup Type No. NGTB03N60R2DT4G NGTB05N60R2DT4G NGTB10N60R2DT4G NGTB15N60R2FG Package DPAK DPAK DPAK TO-220F-3FS Absolute maximum ratings IC IC ICP @Tc= @Tc= @Tc= VCES 25°C 100°C 25°C [V] [A] [A] [A] 600 9 16 20 24 4.5 8 10 14 *1 IF=Ic(Tc=100C). VR=300V, di/dt=300A/s www.onsemi.com 2 12 20 40 60 Electrical characteristics /Ta=25°C VCE(sat) FRD Electrical Characteristics / typ [V] VF typ [V] trr typ [ns] 1.7(3A) 1.65(5A) 1.7(10A) 1.85(15A) 1.5 1.5 1.5 1.7 65*1 75*1 90*1 95*1 NGTB05N60R2DT4G Application Note 5. Application Map of RC-IGBT The application map centers with NGBT03N60R2DT4G in DPAK package. (Fig.1) Best suited for refrigerators and fan motors of a high operation frequency (15kHz). Fig.1 Application area of RC-IGBT (D PAK) 6. Operation in BLDC motor 6-1) DC rating comparison with competitors Table.2 DC Spec. Comparison Table.2 shows DC rating comparison with competitor’s IGBT used in refrigerator compressor. Both NGTB03N60R2DT4G and 05N60R2DT4G have lower VCE(sat) than A IGBT does, which enable conduction loss reduction. Ic[A] @Tc=100°C VCE(sat) typ [V] VF typ [V] NGTB03N60R2DT4G 4.5 1.7(3A) 1.5(3A) NGTB05N60R2DT4G 8.0 1.65(5A) 1.5(5A) A IGBT 4.2 1.9(3A) 1.9(3A) www.onsemi.com 3 NGTB05N60R2DT4G Application Note 6-2) Operation comparison in BLDC motor Tc VS Pout 90 BLDC Motor Vcc=140V Rg=47 fc=6.8kHz Ta=25 85 80 ] 75 70 Tc[ Fig.2 shows the characteristic when operating 3-phase BLDC motor with circuit composition like Fig.3 (120° PWM operation, fc=6.8kHz). Operation temp. of each IGBT mounted on PCB is measured. Like the above-stated DC rating, compared with IGBT A, NGTB03N60R2DT4G and 05N60R2 with low VCE(sat) showed decreased temp. Photo.1 shows the condition of the device mounted on board and the board for operation review (a part). 65 Tc(NGTB03N60R2)[ ] 60 Tc(NGTB05N60R2)[ ] 55 Tc(A IGBT)[ ] 50 45 40 30 40 50 60 70 80 Pout [ W ] 90 100 Fig.2 Operation characteristic Tc VS Ic Photo.1 Board for operation review (a part) Fig.3 Operation Circuit block www.onsemi.com 4 NGTB05N60R2DT4G Application Note ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. 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