NGTB15N60R2FG Application Note

NGTB15N60R2FG
RC-IGBT Application : Inverter, Fan motor
1. At the beginning
RC-IGBT is the abbreviation of Reverse
Conducting Insulated Gate Bipolar Transistor,
which is an IGBT that incorporates FWD into
one chip.
Like inverter circuit, the needed IGBT and
FWD are built into one chip; this enables
package downsizing and thermal balance.
www.onsemi.com
RC-IGBT: diode is formed due to the formation
of a part of backside with N+(high-concentration
N-layer). Collector (C) is cathode, Emitter (E) is
anode, so it can be functioned as FWD of IGBT.
Surely, as a diode, it is designed high-speed
that ensures trr<95ns and high-speed switching
performance. Furthermore, RC-IGBT adopts
our original FS2 structure; this process is called
RC2-IGBT.
2. Cross-section structure of RC-IGBT and
IGBT(general explanation)
Table.1 shows the similarities and differences
between RC-IGBT and IGBT in structure and
operation.
Table.1 Structural comparison between RC-IGBT and IGBT
Chip structure
RC-IGBT
IGBT
For FRD area, a part of backside P+
layer is replaced with N+ layer.
The entire backside is formed by P+
layer.
FRD is a separate chip.
Circuit symbol
Chip cross-section
(explain with
ordinary structure)
Emitter metal
Emitter metal
P+
P+
P-
P-
N
N
IGBT Area
P+
IGBT Area
N+
IGBT contact
© Semiconductor Components Industries, LLC, 2014
November 2014- Rev. 0
FRD Area
P+
Diode contact
1
IGBT contact
Publication Order Number:
ANDNGTB15N60R2DT4G/D
NGTB15N60R2DT4G Application Note
We compared the operation waveforms of
15A spec. devices (see WP.1 & 2). WP.1 is tf
waveform of RC2-IGBT of 15A, while WP.2 is
NPT-IGBT of 15A. It is clear that the operation
of WP.1 realized high-speed and no tf tailing.
3. RC2-IGBT high-speed SW performance
FS2 process is by nature developed by ON
Semi to be used for high-speed switching
IGBT, for example, IGBT for full-switching
PFC. By adopting this structure in RC2-IGBT,
tf is greatly improved (faster speed)
compared with earlier-type (NPT structure)
IGBT.
Ic-2A/div
Ic tailing
VCE-100V/div
WP.1 FS2-IGBT Ic=10A, tf=40nS
WP.2 NPT-IGBT Ic=10A, tf=120nS
With compact package, Ic rating ranges from
Ic=4.5A (NGTB03N60R2DT4G) to
Ic=10A (NGTB10N60R2DT4G).
In addition, NGTB15N60R2FG in TO-220F
package is the device with the largest current of
the series.
4. Products lineup of RC2-IGBT
RC2-IGBT features small size by housing
IGBT and FRD into 1chip, therefore ON Semi
provides its lineup with a focus on DPak
products.
Table.2 RC2-IGBT lineup
Type No.
NGTB03N60R2DT4G
NGTB05N60R2DT4G
NGTB10N60R2DT4G
NGTB15N60R2FG
Package
DPAK
DPAK
DPAK
TO-220F-3FS
Absolute maximum ratings
IC
IC
ICP
@Tc= @Tc= @Tc=
VCES
25°C 100°C 25°C
[V]
[A]
[A]
[A]
600
9
16
20
24
*1 IF=Ic(Tc=100C). VR=300V,di/dt=300A/s
www.onsemi.com
2
4.5
8
10
14
12
20
40
60
Electrical
characteristics
/Ta=25°C
VCE(sat)
FRD Electrical
Characteristics /
typ
[V]
VF
typ
[V]
trr
typ
[ns]
1.7(3A)
1.65(5A)
1.7(10A)
1.85(15A)
1.5
1.5
1.5
1.7
65*1
75*1
90*1
95*1
NGTB15N60R2DT4G Application Note
5. Application map of RC-IGBT
Fig.1
shows
the
application
map.
NGTB15N60R2FG in TO-220F package can
correspond to a wide range of output power,
so can be used in various sets.
when speeds up, RDS(on) becomes higher,
the limit of the speeding-up is low.
In addition, NGTB03N60R2DT4G, 05N60R2,
10N60R2 in DPak are compact, which are
optimal for refrigerator or fan motors of a high
operation frequency (15kHz).
Application Area of RC2 IGBTs and IGBT’s PKG
10
NGTB15N60R2FG
Ic p[A]
General Inverter
Washing
Machine
5.0
Refrigerator
Fan Motor
2.0
NGTB10N60R2DT4G
NGTB05N60R2DT4G
NGTB03N60R2DT4G
1
5k
10k
20k
Frequency [Hz]
Fig.1 Application Area of RC-IGBT
6. Operation with BLDC motor
6-1) MOSFET with FRD vs. Diode
In small-output inverter fan, MOSFET with builtin FRD (Fast Recovery Diode) is always a
competitor as output device. Because the diode
of the MOSFET with FRD is parasitic diode
generated to MOSFET structurally, trr
speeding-up of the parasitic diode becomes
necessary. What happens is that, for MOSFET,
By contrast, for RC-IGBT, because IGBT part
conductivity modulates, such impact is low, so
that trr can be further improved. For example
(see Table.3), when comparing with BFL4007
(MOSFET with FRD built in), although the
values of trr are the same in the spec.,
differences in trr as well as in operation
characteristic occur in actual operation.
See 6-2 for reference.
www.onsemi.com
3
NGTB15N60R2DT4G Application Note
Table.3 IGBT vs. MOSFET in key parameters
VCES(VDSS)
[V]
Ic(ID)[A]
VCE(sat)[V]
RDS(on)[Ω]
trr[nS]
NGTB15N60R2FG
BFL4007
600
500
15
1.4(Ic=15A)
―
14
―
0.52(ID=7.0A)
95(IF=15A)
95(IF=14A)
When comparing the operation waveforms
(high-side), we observed Icp at the current rise
of the MOSFET was large (WP.1 vs. WP.2). For
example (see Table.3), when comparing with
BFL4007 (MOSFET with FRD built in), although
the values of trr are the same in the spec.,
differences in trr as well as in operation
characteristic occur in actual operation. It is
considered, in case of MOSFET, attention due
to the current noise is necessary.
6-2). Behavior comparison
With the circuit composition of Fig.2, under the
heatsink-less condition for both RC-IGBT and
MOSFET, we drove the 3-phase BLDC motor
with comparatively low output, and compared
the operations. (120°PWM operation, fc=15kHz).
Icp is bigger
than Icp of
NGTB15N60R2
Icp
VCE-50V/div
VCE-50V/div
Ic-1A/div
Ic-1A/div
WP.1 NGTB15N60R2FG Pout=80W
Icp=5.0A
WP.2 BFL4007 Pout=80W
Icp=7.0A
Fig.2 Operation circuit block
www.onsemi.com
4
NGTB15N60R2DT4G Application Note
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
www.onsemi.com
5