NGTB15N60R2FG RC-IGBT Application : Inverter, Fan motor 1. At the beginning RC-IGBT is the abbreviation of Reverse Conducting Insulated Gate Bipolar Transistor, which is an IGBT that incorporates FWD into one chip. Like inverter circuit, the needed IGBT and FWD are built into one chip; this enables package downsizing and thermal balance. www.onsemi.com RC-IGBT: diode is formed due to the formation of a part of backside with N+(high-concentration N-layer). Collector (C) is cathode, Emitter (E) is anode, so it can be functioned as FWD of IGBT. Surely, as a diode, it is designed high-speed that ensures trr<95ns and high-speed switching performance. Furthermore, RC-IGBT adopts our original FS2 structure; this process is called RC2-IGBT. 2. Cross-section structure of RC-IGBT and IGBT(general explanation) Table.1 shows the similarities and differences between RC-IGBT and IGBT in structure and operation. Table.1 Structural comparison between RC-IGBT and IGBT Chip structure RC-IGBT IGBT For FRD area, a part of backside P+ layer is replaced with N+ layer. The entire backside is formed by P+ layer. FRD is a separate chip. Circuit symbol Chip cross-section (explain with ordinary structure) Emitter metal Emitter metal P+ P+ P- P- N N IGBT Area P+ IGBT Area N+ IGBT contact © Semiconductor Components Industries, LLC, 2014 November 2014- Rev. 0 FRD Area P+ Diode contact 1 IGBT contact Publication Order Number: ANDNGTB15N60R2DT4G/D NGTB15N60R2DT4G Application Note We compared the operation waveforms of 15A spec. devices (see WP.1 & 2). WP.1 is tf waveform of RC2-IGBT of 15A, while WP.2 is NPT-IGBT of 15A. It is clear that the operation of WP.1 realized high-speed and no tf tailing. 3. RC2-IGBT high-speed SW performance FS2 process is by nature developed by ON Semi to be used for high-speed switching IGBT, for example, IGBT for full-switching PFC. By adopting this structure in RC2-IGBT, tf is greatly improved (faster speed) compared with earlier-type (NPT structure) IGBT. Ic-2A/div Ic tailing VCE-100V/div WP.1 FS2-IGBT Ic=10A, tf=40nS WP.2 NPT-IGBT Ic=10A, tf=120nS With compact package, Ic rating ranges from Ic=4.5A (NGTB03N60R2DT4G) to Ic=10A (NGTB10N60R2DT4G). In addition, NGTB15N60R2FG in TO-220F package is the device with the largest current of the series. 4. Products lineup of RC2-IGBT RC2-IGBT features small size by housing IGBT and FRD into 1chip, therefore ON Semi provides its lineup with a focus on DPak products. Table.2 RC2-IGBT lineup Type No. NGTB03N60R2DT4G NGTB05N60R2DT4G NGTB10N60R2DT4G NGTB15N60R2FG Package DPAK DPAK DPAK TO-220F-3FS Absolute maximum ratings IC IC ICP @Tc= @Tc= @Tc= VCES 25°C 100°C 25°C [V] [A] [A] [A] 600 9 16 20 24 *1 IF=Ic(Tc=100C). VR=300V,di/dt=300A/s www.onsemi.com 2 4.5 8 10 14 12 20 40 60 Electrical characteristics /Ta=25°C VCE(sat) FRD Electrical Characteristics / typ [V] VF typ [V] trr typ [ns] 1.7(3A) 1.65(5A) 1.7(10A) 1.85(15A) 1.5 1.5 1.5 1.7 65*1 75*1 90*1 95*1 NGTB15N60R2DT4G Application Note 5. Application map of RC-IGBT Fig.1 shows the application map. NGTB15N60R2FG in TO-220F package can correspond to a wide range of output power, so can be used in various sets. when speeds up, RDS(on) becomes higher, the limit of the speeding-up is low. In addition, NGTB03N60R2DT4G, 05N60R2, 10N60R2 in DPak are compact, which are optimal for refrigerator or fan motors of a high operation frequency (15kHz). Application Area of RC2 IGBTs and IGBT’s PKG 10 NGTB15N60R2FG Ic p[A] General Inverter Washing Machine 5.0 Refrigerator Fan Motor 2.0 NGTB10N60R2DT4G NGTB05N60R2DT4G NGTB03N60R2DT4G 1 5k 10k 20k Frequency [Hz] Fig.1 Application Area of RC-IGBT 6. Operation with BLDC motor 6-1) MOSFET with FRD vs. Diode In small-output inverter fan, MOSFET with builtin FRD (Fast Recovery Diode) is always a competitor as output device. Because the diode of the MOSFET with FRD is parasitic diode generated to MOSFET structurally, trr speeding-up of the parasitic diode becomes necessary. What happens is that, for MOSFET, By contrast, for RC-IGBT, because IGBT part conductivity modulates, such impact is low, so that trr can be further improved. For example (see Table.3), when comparing with BFL4007 (MOSFET with FRD built in), although the values of trr are the same in the spec., differences in trr as well as in operation characteristic occur in actual operation. See 6-2 for reference. www.onsemi.com 3 NGTB15N60R2DT4G Application Note Table.3 IGBT vs. MOSFET in key parameters VCES(VDSS) [V] Ic(ID)[A] VCE(sat)[V] RDS(on)[Ω] trr[nS] NGTB15N60R2FG BFL4007 600 500 15 1.4(Ic=15A) ― 14 ― 0.52(ID=7.0A) 95(IF=15A) 95(IF=14A) When comparing the operation waveforms (high-side), we observed Icp at the current rise of the MOSFET was large (WP.1 vs. WP.2). For example (see Table.3), when comparing with BFL4007 (MOSFET with FRD built in), although the values of trr are the same in the spec., differences in trr as well as in operation characteristic occur in actual operation. It is considered, in case of MOSFET, attention due to the current noise is necessary. 6-2). Behavior comparison With the circuit composition of Fig.2, under the heatsink-less condition for both RC-IGBT and MOSFET, we drove the 3-phase BLDC motor with comparatively low output, and compared the operations. (120°PWM operation, fc=15kHz). Icp is bigger than Icp of NGTB15N60R2 Icp VCE-50V/div VCE-50V/div Ic-1A/div Ic-1A/div WP.1 NGTB15N60R2FG Pout=80W Icp=5.0A WP.2 BFL4007 Pout=80W Icp=7.0A Fig.2 Operation circuit block www.onsemi.com 4 NGTB15N60R2DT4G Application Note ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. 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