NGTB03N60R2DT4G - ON Semiconductor

NGTB03N60R2DT4G
IGBT
600V, 4.5A, N-Channel
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Features
Electrical Connection
 Reverse Conducting II IGBT
 IGBT VCE(sat)=1.7V (typ) [IC=3A, VGE=15V]
 IGBT tf=75ns (typ)
Diode VF=1.5V (typ) [IF=3A]
Diode trr=65ns (typ)
5s Short Circuit Capability
N-Channel
2,4
1
Applications
 General Purpose Inverter
3
Specifications
4
Absolute Maximum Ratings at Ta=25C, Unless otherwise specified
Parameter
Symbol
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current (DC)
@Tc=25C *2
Limited by Tjmax
@Tc=100C *2
Value
Unit
VCES
600
VGES
20
V
9
A
4.5
A
IC *1
Diode Average Output Current
DPAK
CASE 369C
1 2
3
Marking Diagram
A
Collector Current (Peak)
Pulse width Llimited by Tjmax
V
1:Gate
2:Collector
3:Emitter
4:Collector
ICP
12
IO
4.5
A
PD
49
W
175
C
55 to +175
C
Power Dissipation
Tc=25C (Our ideal heat dissipation condition) *2
Junction Temperature
Tj
Storage Temperature
Tstg
Note :

*1 Collector Current is calculated from the following formula.
Tjmax - Tc
IC(Tc)=
Rth(j-c)×VCE(sat) (IC(Tc))
*2 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching
the device to water-cooled radiator made of aluminum.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
January 2015 - Rev. 2
1
Publication Order Number :
NGTB03N60R2DT4G/D
NGTB03N60R2DT4G
Electrical Characteristics at Ta=25C, Unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
min
Collector to Emitter Breakdown Voltage
Collector to Emitter Cut off Current
V(BR)CES
ICES
IC=1mA, VGE=0V
VCE=600V, VGE=0V
Gate to Emitter Leakage Current
IGES
VGE=20V, VCE=0V
Gate to Emitter Threshold Voltage
VGE(th)
VCE=20V, IC=80A
typ
max
600
V
Tc=25C
10
A
Tc=150C
1
mA
100
nA
4.5
7.0
V
V
Tc=25C
1.7
2.1
Tc=100C
1.9
2.3
V
1.5
2.1
V
Collector to Emitter Saturation Voltage
VCE(sat)
VGE=15V, IC=3A
Forward Diode Voltage
VF
IF=3A
Input Capacitance
Cies
Output Capacitance
Coes
17
pF
Reverse Transfer Capacitance
Cres
10
pF
Turn-ON Delay Time
td(on)
27
ns
Rise Time
tr
17
ns
Turn-ON Time
ton
Turn-OFF Delay Time
td(off)
Fall Time
tf
VGE=0V/15V
Vclamp=400V
Turn-OFF Time
toff
Tc=25C
Turn-ON Energy
Eon
Turn-OFF Energy
Eoff
Total Gate Charge
Qg
Gate to Emitter Charge
Qge
Gate to Collector “Miller” Charge
Qgc
Diode Reverse Recovery Time
trr
415
VCE=20V, f=1MHz
VCC=300V, IC=3A
RG=30, L=500H
See Fig.1, See Fig.2
VCE=300V, VGE=15V, IC=3A
IF=3A,di/dt=200A/s, VCC=300V, See Fig.3
pF
85
ns
59
ns
75
ns
172
ns
50
J
27
J
17
nC
4.4
nC
7.6
nC
65
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Thermal Characteristics at Ta=25C, Unless otherwise specified
Parameter
Symbol
Thermal Resistance IGBT (Junction to Case)
Rth(j-c) (IGBT)
Thermal Resistance (Junction to Ambient)
Rth(j-a)
Conditions
Tc=25C
(Our ideal heat dissipation condition) *2
Note : *2 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching
the device to water-cooled radiator made of aluminum.
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2
Value
Unit
3.06
C/W
100
C/W
NGTB03N60R2DT4G
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3
NGTB03N60R2DT4G
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4
NGTB03N60R2DT4G
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5
NGTB03N60R2DT4G
trr -- IF
200
Reverse Recovery Time, trr -- ns
180
160
140
120
100
80
60
Tc=25°C
VCC=300V
di/dt=200A/μs
40
20
0
0
2
4
6
8
10
12
Thermal Resistance, Rth(j-c) -- ºC/W
Forward Current, IF -- A
14
Rth(j-c) -- Pulse Time
10
7
5
3
2
1.0
7
5
3
Duty Cycle=0.5
0.2
0.1
2
0.05
0.1
7
5
0.02
0.01
3
2
ulse
le P
Sing
0.01
0.000001 2
3
5 70.00001 2
3
5 70.0001
2
3
5 7 0.001
2
3
5 7 0.01
2
3
5
7 0.1
2
3
5
7 1
2
3
5
7 10
Pulse Time, PT -- s
Fig.1 Switching Time Test Circuit
Fig.2 Timing Chart
Diode
VGE
90%
10%
0
500H
NGTB03N60R2DT4G
IC
DUT
90%
90%
VCC
RG
0
VCE
10%
10%
tf
Fig.3 Reverse Recovery Time Test Circuit
DUT
NGTB03N60R2DT4G
500H
VCC
Driver IGBT
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6
10%
10%
tr
td(off)
toff
td(on)
ton
Eoff
Eon
NGTB03N60R2DT4G
Package Dimensions
unit : mm
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE E
A
E
C
A
b3
B
c2
4
L3
D
1
2
Z
Z
H
DETAIL A
3
L4
NOTE 7
b2
e
b
TOP VIEW
c
SIDE VIEW
0.005 (0.13)
ALTERNATE
CONSTRUCTION
C
M
1:Gate
H
L2
2:Collector
BOTTOM VIEW
BOTTOM VIEW
GAUGE
PLANE
3:Emitter
C
L
4:Collector
L1
DETAIL A
SEATING
PLANE
A1
ROTATED 90 CW
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 8:
PIN 1. N/C
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
STYLE 9:
STYLE 10:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
3. RESISTOR ADJUST
3. CATHODE
4. CATHODE
4. ANODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN
DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
0.040
0.155
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
1.01
3.93
GENERIC
MARKING DIAGRAM*
XXXXXXG
ALYWW
AYWW
XXX
XXXXXG
IC
Discrete
SOLDERING FOOTPRINT*
6.20
0.244
5.80
0.228
2.58
0.102
3.00
0.118
1.60
0.063
XXXXXX
A
L
Y
WW
G
6.17
0.243
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb-Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
mm
inches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
Device
NGTB03N60R2DT4G
Package
DPAK
Shipping
note
2500
pcs. / reel
Pb-Free
And
Halogen Free
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
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nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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