Advance Technical Information IXYH30N170C High Voltage XPTTM IGBT VCES = IC110 = VCE(sat) tfi(typ) = 1700V 30A 4.8V 102ns TO-247 Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Maximum Ratings VGES VGEM 1700 1700 V V Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 110 30 185 A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 2.7 Clamped Inductive Load ICM = 60 VCE 1360 A V PC TC = 25°C 520 W -55 ... +175 175 -55 ... +175 °C °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque 300 260 °C °C 1.13/10 Nm/lb.in 6 g Weight G C E G = Gate E = Emitter Tab C = Collector Tab = Collector Features High Voltage Package High Blocking Voltage High Peak Current Capability Low Saturation Voltage Advantages Low Gate Drive Requirement High Power Density Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 1700 VGE(th) IC = 250A, VCE = VGE ICES VCE = 0.8 • VCES, VGE = 0V V 3.0 5.0 VCE = 0V, VGE = 20V VCE(sat) IC V 25 A 5 mA TJ = 150C IGES = 30A, VGE = 15V, Note 1 TJ = 150C © 2015 IXYS CORPORATION, All Rights Reserved 100 3.8 5.4 4.8 Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches nA V V DS100666(5/15) IXYH30N170C Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 10 Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff IC = 30A, VCE = 10V, Note 1 Inductive load, TJ = 25°C IC = 30A, VGE = 15V VCE = 850V, RG = 2.7 Note 2 Inductive load, TJ = 150°C IC = 30A, VGE = 15V VCE = 850V, RG = 2.7 Note 2 S nC 11 nC 39 nC 16 13 6.10 100 102 2.77 ns ns mJ ns ns mJ 16 13 8.90 130 106 4.50 ns ns mJ ns ns mJ 0.21 0.29 °C/W °C/W B E Q pF pF pF 92 IC = 30A, VGE = 15V, VCE = 0.5 • VCES RthJC RthCS Notes: 17 1860 124 58 VCE = 25V, VGE = 0V, f = 1MHz TO-247 (IXYH) Outline D A A2 R S 0P A 0K M D B M D2 D1 D 0P1 R1 1 2 3 4 IXYS OPTION L1 C L A1 c b b2 b4 e J MCAM E1 1 - Gate 2,4 - Collector 3 - Emitter 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH30N170C Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 60 140 VGE = 15V VGE = 15V 13V 12V 11V 10V 50 120 13V 100 40 12V 9V 30 I C - Amperes I C - Amperes 14V 8V 20 7V 11V 80 10V 60 9V 40 8V 10 20 6V 0 7V 6V 0 0 1 2 3 4 5 6 7 0 5 10 60 2.4 VGE = 15V 13V 12V 11V 10V 2.2 25 30 VGE = 15V VCE(sat) - Normalized 2.0 9V 40 I C - Amperes 20 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 50 15 VCE - Volts VCE - Volts 30 8V 20 I C = 60A 1.8 1.6 1.4 I C = 30A 1.2 1.0 7V 0.8 10 I C = 15A 0.6 6V 5V 0 0 2 4 6 8 10 0.4 -50 12 -25 0 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 75 100 125 150 Fig. 6. Input Admittance 80 TJ = 25ºC 9 TJ = 150ºC 25ºC - 40ºC 60 7 I C - Amperes 8 VCE - Volts 50 TJ - Degrees Centigrade VCE - Volts 10 25 I C = 60A 6 5 30A 4 40 20 3 15A 2 0 6 7 8 9 10 11 12 VGE - Volts © 2015 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 5.0 6.0 7.0 VGE - Volts 8.0 9.0 10.0 175 IXYH30N170C Fig. 7. Transconductance Fig. 8. Gate Charge 25 16 TJ = - 40ºC 14 VCE = 850V 25ºC 12 I G = 10mA 150ºC 10 I C = 30A 15 VGE - Volts g f s - Siemens 20 10 8 6 4 5 2 0 0 0 10 20 30 40 50 60 70 0 80 10 20 30 I C - Amperes 40 50 60 70 80 90 100 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 70 10,000 f = 1 MHz 50 Cies 1,000 I C - Amperes Capacitance - PicoFarads 60 Coes 100 40 30 20 TJ = 150ºC Cres RG = 2.7Ω dv / dt < 10V / ns 10 0 10 0 5 10 15 20 25 30 35 250 40 500 750 1000 1250 1500 1750 VCE - Volts VCE - Volts Fig. 11. Maximum Trasient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXYH30N170C Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Eoff 7.5 Eon - --- TJ = 150ºC , VGE = 15V I C = 60A VCE = 850V 9 28 8 20 6.0 16 5.5 12 I C = 30A 5.0 4.0 0 7 5 10 15 20 25 30 14 TJ = 150ºC 5 12 4 10 3 8 2 6 4 1 4 0 0 2 15 35 20 25 30 35 40 45 50 55 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance Eon 240 25 ---- tfi 220 RG = 2.7Ω , VGE = 15V 20 200 4 10 t f i - Nanoseconds 15 I C = 60A I C = 30A 3 450 td(off) - - - - 400 350 VCE = 850V 180 300 I C = 30A 160 250 140 200 I C = 60A 120 150 100 100 t d(off) - Nanoseconds 5 60 TJ = 150ºC, VGE = 15V Eon - MilliJoules E off - MilliJoules 6 TJ = 25ºC VCE = 850V 5 2 25 50 75 100 80 0 150 125 50 0 5 10 15 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 160 tfi 140 td(off) - - - - 100 120 TJ = 25ºC 80 100 60 80 40 60 30 35 40 45 I C - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 50 55 60 td(off) - - - - 35 VCE = 850V 120 140 130 RG = 2.7Ω , VGE = 15V 140 t f i - Nanoseconds TJ = 150ºC 25 30 120 110 I C = 30A 100 100 80 90 60 80 I C = 60A 40 25 50 75 100 TJ - Degrees Centigrade 125 70 150 t d(off) - Nanoseconds 140 t d(off) - Nanoseconds 120 tfi 160 160 VCE = 850V 20 25 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 180 180 RG = 2.7Ω , VGE = 15V 15 20 RG - Ohms TJ - Degrees Centigrade t f i - Nanoseconds 16 RG - Ohms Eoff 6 18 ---- RG = 2.7Ω , VGE = 15V VCE = 850V 8 4.5 Eon 20 E on - MilliJoules 6.5 Eoff 7 24 E on - MilliJoules Eoff - MilliJoules 7.0 32 E off - MilliJoules 8.0 Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXYH30N170C Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 90 tri 80 TJ = 150ºC, VGE = 15V td(on) - - - - 80 37 70 50 25 40 22 I C = 30A 30 19 20 16 10 13 0 10 15 20 25 30 tri 18 30 16 TJ = 25ºC 20 14 12 10 15 20 25 30 35 40 45 50 55 60 23 21 60 20 I C = 60A 50 19 40 18 30 17 20 16 10 I C = 30A 0 50 40 22 VCE = 850V 25 20 TJ = 150ºC 75 100 125 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - RG = 2.7Ω , VGE = 15V 70 50 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 80 22 VCE = 850V 0 35 RG - Ohms 90 24 10 10 5 td(on) - - - - t d(on) - Nanoseconds 28 I C = 60A t r i - Nanoseconds 60 31 60 0 tri 26 RG = 2.7Ω , VGE = 15V 34 VCE = 850V 70 40 t d(on) - Nanoseconds t r i - Nanoseconds 100 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 15 14 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_30N170C (H7-653) 5-19-15