NGTB15N60R2FG IGBT 600V, 14A, N-Channel www.onsemi.com Electrical Connection Features N-Channel Reverse Conducting II IGBT IGBT VCE(sat)=1.85V typ. (IC=15A, VGE=15V) IGBT tf=75ns typ. Diode VF=1.7V typ. (IF=15A) Diode trr=95ns typ. 10s Short Circuit Capability 2 1 Applications 3 1:Gate 2:Collector 3:Emitter General Purpose Inverter Specifications Absolute Maximum Ratings at Ta = 25C, Unless otherwise specified Parameter Symbol Value Unit Collector to Emitter Voltage VCES 600 V Gate to Emitter Voltage VGES 20 V 24 A 14 A ICP 60 A IO 15 A PD 54 W 175 C 55 to +175 C Collector Current (DC) @Tc=25C *2 Limited by Tjmax @Tc=100C *2 IC *1 Collector Current (Peak) Pulse width Limited by Tjmax Diode Average Output Current Power Dissipation Tc=25C (Our ideal heat dissipation condition) *2 Junction Temperature Tj Storage Temperature Tstg Note : TO-220F-3FS Marking GTB15N 60R2 LOTNo. *1 Collector Current is calculated from the following formula. Tjmax - Tc IC(Tc)= Rth(j-c)×VCE(sat) (IC(Tc)) *2 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2014 December 2014 - Rev. 1 1 Publication Order Number : NGTB15N60R2FG/D NGTB15N60R2FG Electrical Characteristics at Ta = 25C, Unless otherwise specified Value Parameter Symbol Conditions Unit min Collector to Emitter Breakdown Voltage V(BR)CES IC=500A, VGE=0V Collector to Emitter Cut off Current ICES VCE=600V, VGE=0V Gate to Emitter Leakage Current IGES VGE=20V, VCE=0V Gate to Emitter Threshold Voltage VGE(th) VCE=20V, IC=250A Collector to Emitter Saturation Voltage VCE(sat) Forward Diode Voltage VF Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance typ max 600 V Tc=25C 10 A Tc=125C 1 mA 100 nA 7.0 V V 4.5 VGE=15V, IC=15A Tc=25C 1.85 2.1 VGE=15V, IC=14A Tc=100C 2.0 2.3 V 1.7 2.1 V IF=15A 2000 pF 65 pF Cres 50 pF Turn-ON Delay Time td(on) 70 ns Rise Time tr 40 ns Turn-ON Time ton 200 ns Turn-OFF Delay Time td(off) ns tf VGE=0V/15V Vclamp=400V 190 Fall Time 75 ns Turn-OFF Time toff Tc=25C 290 ns Turn-ON Energy Eon 550 J Turn-OFF Energy Eoff 220 J Total Gate Charge Qg 80 nC Gate to Emitter Charge Qge VCE=300V, VGE=15V, IC=15A 16 nC 38 nC IF=15A,di/dt=300A/s, VCC=300V, See Fig.3 95 ns Gate to Collector “Miller” Charge Qgc Diode Reverse Recovery Time trr VCE=20V, f=1MHz VCC=300V, IC=15A RG=30, L=500H See Fig.1, See Fig.2 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Thermal Characteristics at Ta = 25C, Unless otherwise specified Parameter Symbol Thermal Resistance IGBT (Junction to Case) Rth(j-c) (IGBT) Thermal Resistance (Junction to Ambient) Rth(j-a) Conditions Tc=25C (Our ideal heat dissipation condition) *2 Note : *2 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum. www.onsemi.com 2 Value Unit 2.78 C/W 69 C/W NGTB15N60R2FG www.onsemi.com 3 NGTB15N60R2FG www.onsemi.com 4 NGTB15N60R2FG www.onsemi.com 5 NGTB15N60R2FG Fig.1 Switching Time Test Circuit Fig.2 Timing Chart VGE Diode 90% 10% 0 500H IC DUT 90% 90% VCC RG 0 VCE 10% 10% tf 10% 10% tr NGTB15N60R2FG Fig.3 Reverse Recovery Time Test Circuit DUT NGTB15N60R2FG 500H VCC Driver IGBT www.onsemi.com 6 td(off) toff td(on) ton Eoff Eon NGTB15N60R2FG Package Dimensions NGTB15N60R2FG TO-220F-3FS CASE 221AM ISSUE O unit : mm 1:Gate 2:Collector 3:Emitter ORDERING INFORMATION Device Package Shipping note NGTB15N60R2FG TO-220F-3FS 50 pcs. / tube Pb-Free and Halogen Free ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. 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