Transistors SMD Type NPN Transistors BFG425W (KFG425W) SOT-343R Unit:mm 2.0±0.2 1.25±0.1 ■ Features A X ● Collector Current Capability IC=30mA ● Collector Emitter Voltage VCEO=4.5V 0~0.1 ● Very high power gain 2.1±0.1 1.30(Typ) ● Low noise figure 3 4 0.23 (max) 0.13 (min) 2 0.25 (max) 0.10 (min) 1.10 (max) 0.80 (min) ● High transition frequency 1 0.35±0.05 0.60±0.1 0.45(max) 0.15(max) 0.1(max) 1.15(Typ) detail X 1 Emitter 3 Emitter 2 Base 4 Collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO 10 Collector - Emitter Voltage VCEO 4.5 Emitter - Base Voltage Unit V VEBO 1 Collector Current - Continuous IC 30 mA Collector Power Dissipation PC 135 mW RθJS 350 W/℃ TJ 150 Tstg -65 to 150 Thermal Resistance From Junction To Soldering Point Junction Temperature Storage Temperature Range ℃ www.kexin.com.cn 1 Transistors SMD Type NPN Transistors BFG425W (KFG425W) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions VCBO Ic= 100 μA， IE= 0 10 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 4.5 Typ Max 1 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 ICBO VCB= 10 V , IE= 0 50 Emitter cut-off current IEBO VEB= 1V , IC=0 100 Collector-emitter saturation voltage VCE(sat) IC= 30 mA, IB=3mA 0.5 Base - emitter saturation voltage VBE(sat) IC= 30 mA, IB=3mA 1.2 hFE VCE= 2V, IC= 2.5mA Maximum power gain Gmax VCE= 2V, IC= 25mA,f=2GHz,Tamb=25℃ 20 Insertion power gain |S21|2 VCE= 2V, IC= 25mA,f=2GHz,Tamb=25℃ 17 IC=2mA; VCE=2V;f=0.9GHz; Γ S=Γ opt 0.8 IC=2mA; VCE=2V;f=2GHz; Γ S=Γ opt 1.2 50 NF Output power at 1 dB gain compression PL1 IC=25mA; VCE=2V; f=2GHz; ZS=ZS opt; ZL=ZL opt; (Note.1) 12 Third order intercept point ITO IC=25mA; VCE=2V; f=2GHz; ZS=ZS opt; ZL=ZL opt; (Note.1) 22 Collector capacitance Cc VCB= 2V, IE=ie=0,f=1MHz 300 Emitter capacitance Ce VEB= 0.5V, IC=ic=0,f=1MHz 575 Feedback capacitance Cre VCB= 2V, IC=0,f=1MHz 95 VCE= 2V, IC= 25mA,f=2GHz,Tamb=25℃ 25 fT Note.1: ZS is optimized for noise; ZL is optimized for gain. ■ Marking Marking www.kexin.com.cn P5 nA V 120 Noise figure Transition frequency Unit V Collector-base cut-off current DC current gain 2 Min Collector- base breakdown voltage dB dBm fF GHz Transistors SMD Type NPN Transistors BFG425W (KFG425W) ■ Typical Characterisitics 200 handbook, halfpage Ptot (mW) 150 100 50 0 0 40 80 120 Ts (°C) 160 Fig.1 Power derating curve. 120 200 Cre handbook, halfpage handbook, halfpage (fF) hFE 160 (1) (2) (3) 80 120 80 40 40 0 0 10 20 (1) VCE = 3 V. (2) VCE = 2 V. (3) VCE = 1 V. Fig.2 fT 30 IC (mA) 0 40 0 1 2 3 4 5 VCB (V) IC = 0; f = 1 MHz. DC current gain as a function of collector current; typical values. Fig.3 Feedback capacitance as a function of collector-base voltage; typical values. 30 25 (GHz) MSG (dB) 20 20 15 10 10 5 0 1 10 IC (mA) 102 0 0 10 VCE = 2 V; f = 2 GHz; Tamb = 25 °C. VCE = 2 V; f = 900 MHz. Fig.4 Fig.5 Transition frequency as a function of collector current; typical values. 20 30 IC (mA) 40 Maximum stable gain as a function of collector current; typical values. www.kexin.com.cn 3 Transistors SMD Type NPN Transistors BFG425W (KFG425W) ■ Typical Characterisitics 50 30 handbook, halfpage gain (dB) gain (dB) MSG 40 MSG Gmax 20 30 S21 Gmax 20 10 10 0 0 10 20 30 IC (mA) 0 40 VCE = 2 V; f = 2 GHz. Fig.6 102 10 103 Gain as a function of collector current; typical values. Fig.7 Gain as a function of frequency; typical values. 90° 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 180° 0.2 0 0.4 5 . 3 GHz 0.5 MGG689 1 0.2 2 5 0° 0 40 MHz 5 0.2 −135° 0.5 2 1 −45° 1.0 −90° IC = 25 mA; VCE = 2 V; Zo = 50 Ω. Fig.8 Common emitter input reflection coefficient (S11); typical values. 6 www.kexin.com.cn 104 IC = 25 mA; VCE = 2 V. handbook, full pagewidth 4 f (MHz) Transistors SMD Type NPN Transistors BFG425W (KFG425W) ■ Typical Characterisitics 90° 90° 135° 135° 45° 45° 3 GHz 180° 3 GHz 40 MHz 50 40 30 20 10 −135° IC = 25 mA; VCE = 2 V. 180° 0° 0.5 0.4 0.3 0.2 0.1 0° 40 MHz −135° −45° −45° −90° −90° IC = 25 mA; VCE = 2 V. Fig.9 Common emitter forward transmission coefficient (S21); typical values. Fig.10 Common emitter reverse transmission coefficient (S12); typical values. 90° 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 5 0.5 2 1 40 MHz 0° 0 5 3 GHz 0.2 −135° 2 −45° 1.0 −90° IC = 25 mA; VCE = 2 V; Zo = 50 Ω. Fig.11 Common emitter output reflection coefficient (S22); typical values. www.kexin.com.cn 5 Transistors SMD Type NPN Transistors BFG425W (KFG425W) ■ Typical Characterisitics Noise data VCE = 2 V; typical values. f (MHz) 900 2000 6 Fmin (dB) IC (mA) Γmag Γangle rn (Ω) 1 0.7 0.67 19.1 0.40 2 0.8 0.48 17.8 0.27 4 1 0.28 11.7 0.24 10 1.4 0.02 −63.9 0.19 15 1.6 0.11 −162.4 0.18 20 1.9 0.19 −165.5 0.18 25 2.1 0.25 −166.3 0.19 30 2.3 0.29 −166.5 0.19 1 1.3 0.56 57.5 0.36 2 1.2 0.43 57.2 0.25 4 1.2 0.22 60.8 0.18 10 1.6 0.06 137.4 0.19 15 1.9 0.13 −162.1 0.20 20 2.2 0.17 −155.5 0.20 25 2.5 0.22 −152.2 0.21 30 2.8 0.27 −150.8 0.25 www.kexin.com.cn MGG688 3 handbook, halfpage Fmin (dB) 2 (1) (2) 1 0 0 10 20 IC (mA) 30 (1) VCE = 2 V; f = 2 GHz. (2) VCE = 2 V; f = 900 MHz. Fig.12 Minimum noise figure as a function of the collector current; typical values. Transistors SMD Type NPN Transistors BFG425W (KFG425W) ■ Typical Characterisitics SEQUENCE No. PARAMETER VALUE UNIT SEQUENCE No. (2)(3) PARAMETER VALUE UNIT 1 IS 47.17 aA 39 Cbp 145 fF 2 BF 145.0 − 40 (2) Rsb1 25 Ω − 41 (3) Rsb2 19 Ω Notes 3 NF 0.993 4 VAF 31.12 V 5 IKF 304.0 mA 6 ISE 300.2 fA 7 NE 3.000 − 8 BR 11.37 − 9 NR 0.985 − 10 VAR 1.874 V 11 IKR 0.121 A 12 ISC 484.8 aA 13 NC 1.546 − 14 RB 14.41 Ω 15 IRB 0.000 A 16 RBM 6.175 Ω 17 RE 177.9 mΩ 18 RC 1.780 Ω 19 (1) XTB 1.500 − 20 (1) EG 1.110 eV 21 (1) XTI 3.000 − 22 CJE 310.9 fF 23 VJE 900.0 mV 24 MJE 0.346 − 25 TF 4.122 ps 26 XTF 68.20 − 27 VTF 2.004 V 28 ITF 1.525 A 29 PTF 0.000 deg 30 CJC 137.7 fF 31 VJC 556.9 mV 32 MJC 0.207 − 33 XCJC 0.500 − TR 0.000 ns CJS 667.5 fF 34 (1) 35 (1) 36 (1) VJS 418.3 mV 37 (1) MJS 0.239 − 38 FC 0.550 − 1. These parameters have not been extracted, the default values are shown. 2. Bonding pad capacity Cbp in series with substrate resistance Rsb1 between B′ and E′. 3. Bonding pad capacity Cbp in series with substrate resistance Rsb2 between C′ and E′. C cb handbook, halfpage B L1 B' L2 C' E' C be C Cce MGD956 L3 E QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc) fc = scaling frequency = 1 GHz. Fig.13 Package equivalent circuit SOT343R2. List of components (see Fig.14) DESIGNATION VALUE UNIT Cbe 80 fF Ccb 2 fF Cce 80 fF L1 1.1 nH L2 1.1 nH L3 (note 1) 0.25 nH Note 1. External emitter inductance to be added separately due to the influence of the printed-circuit board. www.kexin.com.cn 7