PHILIPS BFG425W

DISCRETE SEMICONDUCTORS
BFG425W
NPN 25 GHz wideband transistor
Product specification
Supersedes data of 1997 Oct 28
File under Discrete Semiconductors, SC14
1998 Mar 11
Philips Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
FEATURES
PINNING
• Very high power gain
PIN
DESCRIPTION
• Low noise figure
1
emitter
• High transition frequency
2
base
• Emitter is thermal lead
3
emitter
• Low feedback capacitance.
4
collector
APPLICATIONS
• RF front end
• Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
handbook, halfpage
3
4
• Radar detectors
• Pagers
• Satellite television tuners (SATV)
2
• High frequency oscillators.
Top view
DESCRIPTION
1
MSB842
Marking code: P5.
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
−
−
10
V
VCEO
collector-emitter voltage open base
−
−
4.5
V
IC
collector current (DC)
−
25
30
mA
mW
open emitter
Ptot
total power dissipation
Ts ≤ 103 °C
−
−
135
hFE
DC current gain
IC = 25 mA; VCE = 2 V; Tj = 25 °C
50
80
120
Cre
feedback capacitance
IC = 0; VCB = 2 V; f = 1 MHz
−
95
−
fF
fT
transition frequency
IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C −
25
−
GHz
Gmax
maximum power gain
IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C −
20
−
dB
F
noise figure
IC = 2 mA; VCE = 2 V; f = 2 GHz; ΓS = Γopt
1.2
−
dB
−
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1998 Mar 11
2
Philips Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
10
V
VCEO
collector-emitter voltage
open base
−
4.5
V
VEBO
emitter-base voltage
open collector
−
1
V
IC
collector current (DC)
−
30
mA
Ptot
total power dissipation
Ts ≤ 103 °C; note 1; see Fig.2
−
135
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
150
°C
Note
1. Ts is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering point
MGG681
200
handbook, halfpage
Ptot
(mW)
150
100
50
0
0
40
80
120
160
Ts (°C)
Fig.2 Power derating curve.
1998 Mar 11
3
VALUE
UNIT
350
K/W
Philips Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)CBO
collector-base breakdown voltage
CONDITIONS
IC = 2.5 µA; IE = 0
MIN.
TYP.
MAX.
UNIT
10
−
−
V
V(BR)CEO
collector-emitter breakdown voltage IC = 1 mA; IB = 0
4.5
−
−
V
V(BR)EBO
emitter-base breakdown voltage
IE = 2.5 µA; IC = 0
1
−
−
V
ICBO
collector-base leakage current
IE = 0; VCB = 4.5 V
−
−
15
nA
hFE
DC current gain
IC = 25 mA; VCE = 2 V; see Fig.3
50
80
120
Cc
collector capacitance
IE = ie = 0; VCB = 2 V; f = 1 MHz
−
300
−
fF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
575
−
fF
Cre
feedback capacitance
IC = 0; VCB = 2 V; f = 1 MHz;
see Fig.4
−
95
−
fF
fT
transition frequency
IC = 25 mA; VCE = 2 V; f = 2 GHz;
Tamb = 25 °C; see Fig.5
−
25
−
GHz
Gmax
maximum power gain; note 1
IC = 25 mA; VCE = 2 V; f = 2 GHz;
Tamb = 25 °C; see Figs 7 and 8
−
20
−
dB
insertion power gain
IC = 25 mA; VCE = 2 V; f = 2 GHz;
Tamb = 25 °C; see Fig.8
−
17
−
dB
noise figure
IC = 2 mA; VCE = 2 V; f = 900 MHz;
ΓS = Γopt; see Fig.13
−
0.8
−
dB
IC = 2 mA; VCE = 2 V; f = 2 GHz;
ΓS = Γopt; see Fig.13
−
1.2
−
dB
S 21
2
F
PL1
output power at 1 dB gain
compression
IC = 25 mA; VCE = 2 V; f = 2 GHz;
ZS = ZS opt; ZL = ZL opt; note 2
−
12
−
dBm
ITO
third order intercept point
IC = 25 mA; VCE = 2 V; f = 2 GHz;
ZS = ZS opt; ZL = ZL opt; note 2
−
22
−
dBm
Notes
1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG; see Figs 6, 7 and 8.
2. ZS is optimized for noise; ZL is optimized for gain.
1998 Mar 11
4
Philips Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
MGG682
120
MGG683
200
handbook, halfpage
handbook, halfpage
Cre
(fF)
hFE
160
(1)
(2)
(3)
80
120
80
40
40
0
0
0
10
20
30
IC (mA)
40
0
1
(1) VCE = 3 V.
(2) VCE = 2 V.
(3) VCE = 1 V.
IC = 0; f = 1 MHz.
Fig.3
Fig.4
DC current gain as a function of collector
current; typical values.
MGG684
25
2
3
4
5
VCB (V)
Feedback capacitance as a function of
collector-base voltage; typical values.
MGG685
30
handbook, halfpage
handbook, halfpage
fT
(GHz)
MSG
(dB)
20
20
15
10
10
5
0
1
10
IC (mA)
0
102
0
10
VCE = 2 V; f = 2 GHz; Tamb = 25 °C.
VCE = 2 V; f = 900 MHz.
Fig.5
Fig.6
Transition frequency as a function of
collector current; typical values.
1998 Mar 11
5
20
30
IC (mA)
40
Maximum stable gain as a function of
collector current; typical values.
Philips Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
MGG687
MGG686
30
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
MSG
40
MSG
Gmax
20
30
S21
Gmax
20
10
10
0
0
0
10
20
30
IC (mA)
40
VCE = 2 V; f = 2 GHz.
Fig.7
102
10
103
104
IC = 25 mA; VCE = 2 V.
Gain as a function of collector current;
typical values.
Fig.8
Gain as a function of frequency;
typical values.
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
3 GHz
180°
0.2
0
0.5
MGG689
1
2
5
0°
0
40 MHz
5
0.2
−135°
0.5
2
−45°
1
1.0
−90°
MGG689
IC = 25 mA; VCE = 2 V; Zo = 50 Ω.
Fig.9 Common emitter input reflection coefficient (S11); typical values.
1998 Mar 11
f (MHz)
6
Philips Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
90°
handbook, full pagewidth
135°
45°
3 GHz
40 MHz
180°
50
40
30
20
0°
10
−135°
−45°
−90°
MGG690
IC = 25 mA; VCE = 2 V.
Fig.10 Common emitter forward transmission coefficient (S21); typical values.
90°
handbook, full pagewidth
135°
45°
3 GHz
0.5
0.4
0.3
0.2
0.1
180°
0°
40 MHz
−135°
−45°
−90°
MGG691
IC = 25 mA; VCE = 2 V.
Fig.11 Common emitter reverse transmission coefficient (S12); typical values.
1998 Mar 11
7
Philips Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
−135°
0°
0
5
3 GHz
0.2
40 MHz
0.5
2
−45°
1
1.0
−90°
MGG692
IC = 25 mA; VCE = 2 V; Zo = 50 Ω.
Fig.12 Common emitter output reflection coefficient (S22); typical values.
Noise data
VCE = 2 V; typical values.
f
(MHz)
900
2000
IC
(mA)
Fmin
(dB)
Γmag
Γangle
rn
(Ω)
1
0.7
0.67
19.1
0.40
2
0.8
0.48
17.8
0.27
4
1
0.28
11.7
0.24
10
1.4
0.02
−63.9
0.19
15
1.6
0.11
−162.4
0.18
20
1.9
0.19
−165.5
0.18
25
2.1
0.25
−166.3
0.19
30
2.3
0.29
−166.5
0.19
1
1.3
0.56
57.5
0.36
2
1.2
0.43
57.2
0.25
4
1.2
0.22
60.8
0.18
10
1.6
0.06
137.4
0.19
15
1.9
0.13
−162.1
0.20
20
2.2
0.17
−155.5
0.20
25
2.5
0.22
−152.2
0.21
30
2.8
0.27
−150.8
0.25
1998 Mar 11
MGG688
3
handbook, halfpage
Fmin
(dB)
2
(1)
(2)
1
0
0
10
20
IC (mA)
30
(1) VCE = 2 V; f = 2 GHz.
(2) VCE = 2 V; f = 900 MHz.
Fig.13 Minimum noise figure as a function of the
collector current; typical values.
8
Philips Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
SPICE parameters for the BFG425W die
SEQUENCE No.
PARAMETER
VALUE
SEQUENCE No.
UNIT
(2)(3)
PARAMETER
VALUE
UNIT
1
IS
47.17
aA
39
Cbp
145
fF
2
BF
145.0
−
40 (2)
Rsb1
25
Ω
3
NF
0.993
−
41 (3)
Rsb2
19
Ω
4
VAF
31.12
V
Notes
5
IKF
304.0
mA
6
ISE
300.2
fA
1. These parameters have not been extracted, the
default values are shown.
7
NE
3.000
−
8
BR
11.37
−
9
NR
0.985
−
10
VAR
1.874
V
11
IKR
0.121
A
12
ISC
484.8
aA
13
NC
1.546
−
14
RB
14.41
Ω
15
IRB
0.000
A
16
RBM
6.175
Ω
17
RE
177.9
mΩ
18
RC
1.780
Ω
2. Bonding pad capacity Cbp in series with substrate
resistance Rsb1 between B′ and E′.
3. Bonding pad capacity Cbp in series with substrate
resistance Rsb2 between C′ and E′.
C cb
handbook, halfpage
L1
B
L2
B'
C'
E'
C be
C
Cce
XTB
1.500
−
(1)
EG
1.110
eV
21 (1)
XTI
3.000
−
22
CJE
310.9
fF
23
VJE
900.0
mV
24
MJE
0.346
−
25
TF
4.122
ps
26
XTF
68.20
−
27
VTF
2.004
V
28
ITF
1.525
A
29
PTF
0.000
deg
30
CJC
137.7
fF
31
VJC
556.9
mV
Cbe
80
fF
2
fF
19 (1)
20
MGD956
L3
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc)
fc = scaling frequency = 1 GHz.
Fig.14 Package equivalent circuit SOT343R2.
List of components (see Fig.14)
DESIGNATION
VALUE
UNIT
32
MJC
0.207
−
Ccb
33
XCJC
0.500
−
Cce
80
fF
TR
0.000
ns
L1
1.1
nH
1.1
nH
0.25
nH
34 (1)
(1)
CJS
667.5
fF
L2
36 (1)
VJS
418.3
mV
L3 (note 1)
37 (1)
MJS
0.239
−
38
FC
0.550
−
35
1998 Mar 11
Note
1. External emitter inductance to be added separately
due to the influence of the printed-circuit board.
9
Philips Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
PACKAGE OUTLINE
Plastic surface mounted package; reverse pinning; 4 leads
D
SOT343R
E
B
A
X
HE
y
v M A
e
3
4
Q
A
A1
c
2
w M B
1
bp
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-21
SOT343R
1998 Mar 11
EUROPEAN
PROJECTION
10
Philips Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Mar 11
11
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© Philips Electronics N.V. 1998
SCA57
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Printed in The Netherlands
125104/00/04/pp12
Date of release: 1998 Mar 11
Document order number:
9397 750 03389