SUM60N04-05LT Datasheet

SUM60N04-05LT
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET with Sensing Diode
FEATURES
PRODUCT SUMMARY
V(BR)DSS (V)
40
rDS(on) (Ω)
ID (A)
0.0045 at VGS = 10 V
60a
0.0065 at VGS = 4.5 V
20a
• TrenchFET® Power MOSFETS Plus
Temperature Sensing Diode
• 175 °C Junction Temperature
• Low Thermal Resistance Package
Available
RoHS*
COMPLIANT
APPLICATIONS
D2PAK-5L
• Industrial
D
T1
1 2 3 4 5
D1
G
D2
T2
G
D
S
T2
T1
S
Ordering Information: SUM60N04-05LT
SUM60N04-05LT-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)d
TC = 25 °C
TC = 100 °C
ID
60a
250
Continuous Diode Current (Diode Conduction)d
IS
60a
Avalanche Current
IAR
60a
EAR
180
Repetitive Avalanche Energy
b
Maximum Power Dissipationa
L = 0.1 mH
TC = 25 °C
TA = 25 °C
Operating Junction and Storage Temperature Range
V
60a
IDM
Pulsed Drain Current
Unit
A
mJ
c
PD
200
3.75d
W
TJ, Tstg
- 55 to 175
°C
Symbol
Limit
Unit
RthJA
40
RthJC
0.75
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambientd
PCB Mountd
Junction-to-Case
°C/W
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71747
S-80273-Rev. D, 11-Feb-08
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1
SUM60N04-05LT
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
V(BR)DSS
VGS = 0 V, ID = 250 µA
40
VGS(th)
VDS = VGS, IDS = 250 µA
1
IGSS
VDS = 0 V, VGS = ± 20 V
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
IDSS
3
± 100
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 125 °C
50
VDS = 40 V, VGS = 0 V, TJ = 175 °C
500
ID(on)
rDS(on)
VDS = 5 V, VGS = 10 V
120
nA
µA
A
VGS = 10 V, ID = 60 A
0.0035
0.0045
VGS = 4.5 V, ID = 20 A
0.0051
0.0065
VGS = 10 V, ID = 60 A, TJ = 125 °C
0.0069
VGS = 10 V, ID = 60 A, TJ = 175 °C
Ω
0.0086
VFD1 and
VFD2
IF = 50 µA
655
715
IF = 25 µA
600
660
Sense Diode Forward Voltage Increase
ΔVF
From IF = 25 µA to IF = 50 µA
30
80
Forward Transconductancea
gfs
VDS = 15 V, ID = 20 A
Sense Diode Forward Voltage
V
35
mV
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Gate-Source
Chargec
6000
VGS = 0 V, VDS = 25 V, f = 1 MHz
700
Qg
Qgs
130
VDS = 20 V, VGS = 10 V, ID = 25 A
Qgd
40
Turn-On Delay Timec
td(on)
15
tr
Turn-Off Delay Timec
td(off)
Rise Time
Fall Timec
VDD = 20 V, RL = 0.8 Ω
ID ≅ 25 A, VGEN = 10 V, Rg = 2.5 Ω
tf
nC
25
Gate-Drain Chargec
c
pF
1100
20
80
120
100
150
100
150
ns
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
IS
60
Pulsed Current
ISM
200
Forward Voltagea
VSD
Continuous Current
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 60 A, VGS = 0 V
trr
IRM(REC)
Qrr
IF = 60 A, di/dt = 100 A/µs
A
1.0
1.5
V
60
90
ns
2.1
4
A
0.065
0.18
µC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71747
S-80273-Rev. D, 11-Feb-08
SUM60N04-05LT
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
250
250
VGS = 10 thru 6 V
5V
200
I D - Drain Current (A)
I D - Drain Current (A)
200
150
100
4V
50
150
100
TC = 125 °C
50
25 °C
- 55 °C
3V
0
0
0
2
4
6
8
10
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
200
6
0.015
TC = - 55 °C
25 °C
0.012
rDS(on) - On-Resistance
(Normalized)
g fs - Transconductance (S)
160
125 °C
120
80
40
0.009
VGS = 4.5 V
0.006
VGS = 10 V
0.003
0
0.000
0
20
40
60
80
100
120
0
20
40
VGS - Gate-to-Source Voltage (V)
80
100
120
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
10000
V GS - Gate-to-Source Voltage (V)
20
8000
C - Capacitance (pF)
60
Ciss
6000
4000
Coss
2000
Crss
0
VGS = 20 V
ID = 25 A
16
12
8
4
0
0
8
16
24
32
40
0
40
80
120
160
200
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
Document Number: 71747
S-80273-Rev. D, 11-Feb-08
240
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SUM60N04-05LT
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
100
1.6
I S - Source Current (A)
r DS(on) - On-Resistance
(Normalized)
VGS = 10 V
ID = 25 A
1.2
0.8
TJ = 150 °C
10
TJ = 25 °C
0.4
0.0
- 50
1
- 25
0
25
50
75
100
125
150
175
0
0.2
0.4
TJ - Junction Temperature (°C)
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
55
ID = 1 mA
52
V (BR)DSS (V)
I Dav (A)
100
IAV (A) at TA = 150 °C
10
49
46
1
IAV (A) at TA = 25 °C
43
0.1
0.00001
0.0001
0.001
0.01
0.1
40
- 50
1
tin (s)
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown
vs. Junction Temperature
Avalanche Current vs. Time
1.0
0.01
0.8
0.001
ID = 50 µA
TJ = 150 °C
I F (V)
I F (V)
0.6
ID = 25 µA
0.0001
0.4
TJ = 25 °C
0.00001
0.2
0.0
0.000001
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Sense Diode Forward Voltage vs. Temperature
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0
0.25
0.5
0.75
1.0
1.25
1.5
VF (V)
Sense Diode Forward Voltage
Document Number: 71747
S-80273-Rev. D, 11-Feb-08
SUM60N04-05LT
Vishay Siliconix
THERMAL RATINGS
1000
70
Limited
by rDS(on)*
50
I D - Drain Current (A)
I D - Drain Current (A)
60
40
30
20
1 ms
10 ms
100 ms
DC
10
TC = 25 °C
Single Pulse
1
0
25
50
75
100
125
150
175
100 µs
100
10
0
10 µs
0.1
0.1
TC - Case Temperature (°C)
1
* VGS
Maximum Avalanche and Drain Current
vs. Case Temperature
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
Safe Operating Area
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71747.
Document Number: 71747
S-80273-Rev. D, 11-Feb-08
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Revision: 02-Oct-12
1
Document Number: 91000