SUM60N04-05LT Vishay Siliconix N-Channel 40-V (D-S) MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 60a 0.0065 at VGS = 4.5 V 20a • TrenchFET® Power MOSFETS Plus Temperature Sensing Diode • 175 °C Junction Temperature • Low Thermal Resistance Package Available RoHS* COMPLIANT APPLICATIONS D2PAK-5L • Industrial D T1 1 2 3 4 5 D1 G D2 T2 G D S T2 T1 S Ordering Information: SUM60N04-05LT SUM60N04-05LT-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)d TC = 25 °C TC = 100 °C ID 60a 250 Continuous Diode Current (Diode Conduction)d IS 60a Avalanche Current IAR 60a EAR 180 Repetitive Avalanche Energy b Maximum Power Dissipationa L = 0.1 mH TC = 25 °C TA = 25 °C Operating Junction and Storage Temperature Range V 60a IDM Pulsed Drain Current Unit A mJ c PD 200 3.75d W TJ, Tstg - 55 to 175 °C Symbol Limit Unit RthJA 40 RthJC 0.75 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientd PCB Mountd Junction-to-Case °C/W Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71747 S-80273-Rev. D, 11-Feb-08 www.vishay.com 1 SUM60N04-05LT Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VGS = 0 V, ID = 250 µA 40 VGS(th) VDS = VGS, IDS = 250 µA 1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea IDSS 3 ± 100 VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 125 °C 50 VDS = 40 V, VGS = 0 V, TJ = 175 °C 500 ID(on) rDS(on) VDS = 5 V, VGS = 10 V 120 nA µA A VGS = 10 V, ID = 60 A 0.0035 0.0045 VGS = 4.5 V, ID = 20 A 0.0051 0.0065 VGS = 10 V, ID = 60 A, TJ = 125 °C 0.0069 VGS = 10 V, ID = 60 A, TJ = 175 °C Ω 0.0086 VFD1 and VFD2 IF = 50 µA 655 715 IF = 25 µA 600 660 Sense Diode Forward Voltage Increase ΔVF From IF = 25 µA to IF = 50 µA 30 80 Forward Transconductancea gfs VDS = 15 V, ID = 20 A Sense Diode Forward Voltage V 35 mV S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Gate-Source Chargec 6000 VGS = 0 V, VDS = 25 V, f = 1 MHz 700 Qg Qgs 130 VDS = 20 V, VGS = 10 V, ID = 25 A Qgd 40 Turn-On Delay Timec td(on) 15 tr Turn-Off Delay Timec td(off) Rise Time Fall Timec VDD = 20 V, RL = 0.8 Ω ID ≅ 25 A, VGEN = 10 V, Rg = 2.5 Ω tf nC 25 Gate-Drain Chargec c pF 1100 20 80 120 100 150 100 150 ns Source-Drain Diode Ratings and Characteristics TC = 25 °Cb IS 60 Pulsed Current ISM 200 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 60 A, VGS = 0 V trr IRM(REC) Qrr IF = 60 A, di/dt = 100 A/µs A 1.0 1.5 V 60 90 ns 2.1 4 A 0.065 0.18 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71747 S-80273-Rev. D, 11-Feb-08 SUM60N04-05LT Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 250 VGS = 10 thru 6 V 5V 200 I D - Drain Current (A) I D - Drain Current (A) 200 150 100 4V 50 150 100 TC = 125 °C 50 25 °C - 55 °C 3V 0 0 0 2 4 6 8 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 200 6 0.015 TC = - 55 °C 25 °C 0.012 rDS(on) - On-Resistance (Normalized) g fs - Transconductance (S) 160 125 °C 120 80 40 0.009 VGS = 4.5 V 0.006 VGS = 10 V 0.003 0 0.000 0 20 40 60 80 100 120 0 20 40 VGS - Gate-to-Source Voltage (V) 80 100 120 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 10000 V GS - Gate-to-Source Voltage (V) 20 8000 C - Capacitance (pF) 60 Ciss 6000 4000 Coss 2000 Crss 0 VGS = 20 V ID = 25 A 16 12 8 4 0 0 8 16 24 32 40 0 40 80 120 160 200 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 71747 S-80273-Rev. D, 11-Feb-08 240 www.vishay.com 3 SUM60N04-05LT Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 100 1.6 I S - Source Current (A) r DS(on) - On-Resistance (Normalized) VGS = 10 V ID = 25 A 1.2 0.8 TJ = 150 °C 10 TJ = 25 °C 0.4 0.0 - 50 1 - 25 0 25 50 75 100 125 150 175 0 0.2 0.4 TJ - Junction Temperature (°C) 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 55 ID = 1 mA 52 V (BR)DSS (V) I Dav (A) 100 IAV (A) at TA = 150 °C 10 49 46 1 IAV (A) at TA = 25 °C 43 0.1 0.00001 0.0001 0.001 0.01 0.1 40 - 50 1 tin (s) - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Avalanche Current vs. Time 1.0 0.01 0.8 0.001 ID = 50 µA TJ = 150 °C I F (V) I F (V) 0.6 ID = 25 µA 0.0001 0.4 TJ = 25 °C 0.00001 0.2 0.0 0.000001 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Sense Diode Forward Voltage vs. Temperature www.vishay.com 4 0 0.25 0.5 0.75 1.0 1.25 1.5 VF (V) Sense Diode Forward Voltage Document Number: 71747 S-80273-Rev. D, 11-Feb-08 SUM60N04-05LT Vishay Siliconix THERMAL RATINGS 1000 70 Limited by rDS(on)* 50 I D - Drain Current (A) I D - Drain Current (A) 60 40 30 20 1 ms 10 ms 100 ms DC 10 TC = 25 °C Single Pulse 1 0 25 50 75 100 125 150 175 100 µs 100 10 0 10 µs 0.1 0.1 TC - Case Temperature (°C) 1 * VGS Maximum Avalanche and Drain Current vs. Case Temperature 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71747. Document Number: 71747 S-80273-Rev. D, 11-Feb-08 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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