SUM60N04-12LT Vishay Siliconix Temperature Sensing MOSFET, N-Channel 40-V (D-S) FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.009 at VGS = 10 V 60a 0.012 at VGS = 4.5 V 60 Notes: a. Package Limited. DESCRIPTION The SUM60N04-12LT is a 40 V N-Channel, 15 mΩ logic level MOSFET in a 5-lead D2PAK package built on the Vishay Siliconix proprietary high-cell density TrenchFET technology. Two anti-parallel electrically isolated poly-silicon diodes are used to sense the temperature changes in the MOSFET. • • • • • • • • • • Temperature-Sense Diodes for Thermal Shutdown Available TrenchFET® Power MOSFET RoHS* 175 °C Maximum Junction Temperature COMPLIANT ESD Protected: 2000 V Logic-Level Low On-Resistance Avalanche Rated Low Gate Charge Fast Turn-On Time 100 % Rg Tested 5 Lead D2PAK APPLICATIONS • Industrial The gate of the MOSFET is protected from high voltage transients by two back-to-back poly-silicon zener diodes. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION D2Pak TO-263, 5 Leads D T1 1 2 3 4 5 D1 G D2 T2 G T1 D T2 S S Ordering Information: SUM60N04-12LT SUM60N04-12LT-E3 (Lead (Pb)-free) N-Channel MOSFET * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71620 S-80272-Rev. C, 11-Feb-08 www.vishay.com 1 SUM60N04-12LT Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 IG 50 VGS Clamp Current Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C Avalanche Current ID 60 50 125 VSA 100 Source-to-Cathode Voltage VSC 100 Maximum Power Dissipationa Operating Junction and Storage Temperature Range TC = 25 °C d TA = 25 °C PD mA A 50 IAR EAR L = 0.1 mH V a Source-to-Anode Voltage Repetitive Avalanche Energy Unit mJ V 110 3.75 W TJ, Tstg - 55 to 175 °C Unit THERMAL RESISTANCE RATINGS Parameter Symbol Limit Junction-to-Ambientd RthJA 40 Junction-to-Case RthJC 1.35 °C/W Notes: a. Package limited. b. Duty Cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When Mounted on 1" square PCB FR4. www.vishay.com 2 Document Number: 71620 S-80272-Rev. C, 11-Feb-08 SUM60N04-12LT Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VGS = 0 V, ID = 1 mA 40 Typ. Max. Unit V Static Drain-Source Breakdown Voltage VGS Clamp Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS VDS = 0 V, IG = 20 µA 10 20 VGS(th) VDS = VGS, IDS = 1 mA 1 2 IGSS VDS = 0 V, VGS = ± 5 V ± 250 VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 125 °C 50 IDSS VDS = 40 V, VGS = 0 V, TJ = 175 °C rDS(on) 0.0075 0.0135 VGS = 10 V, ID = 20 A, TJ = 175 °C 0.018 VGS = 4.5 V, ID = 20 A Sense Diode Forward Voltage 0.009 VGS = 10 V, ID = 20 A, TJ = 125 °C VFD1 µA 250 VGS = 10 V, ID = 20 A Drain-Source On-State Resistancea nA 0.0095 Ω 0.012 IF = 250 µA 675 735 VFD2 IF = 250 µA 675 735 Sense Diode Forward Voltage Increase ΔVF From IF = 125 µA to IF = 250 µA 25 50 Forward Transconductancea gfs VDS = 15 V, ID = 20 A 35 mV S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Charge c Gate-Drain Chargec 51 VDS = 20 V, VGS = 10 V, ID = 25 A Fall Timec td(off) 70 nC 5.5 12 1.2 td(on) tr c pF 560 210 Rg c Rise Timec Turn-Off Delay Time VGS = 0 V, VDS = 25 V, f = 1 MHz Qgd Gate Resistance Turn-On Delay Time Qgs 1920 VDD = 20 V, RL = 0.8 Ω ID ≅ 25 A, VGEN = 10 V, Rg = 2.5 Ω tf Source-Drain Diode Ratings and Characteristics TC = 25 4.1 20 40 70 120 35 70 20 40 IS 60 ISM 240 Forward Voltagea VSD IF = 60 A, VGS = 0 V trr IF = 60 A, di/dt = 100 A/µs Reverse Recovery Time ns °Cb Pulsed Current Continuous Current Ω 40 A 1.4 V 60 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 71620 S-80272-Rev. C, 11-Feb-08 www.vishay.com 3 SUM60N04-12LT Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 200 VGS = 10 thru 7 V TC = - 55 °C 6V 160 I D - Drain Current (A) I D - Drain Current (A) 200 5V 150 100 4V 50 125 °C 120 80 40 1, 2 V 3V 0 0 0 2 4 6 8 10 0 1 2 3 5 6 7 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 8 0.018 TC = - 55 °C r DS(on) - On-Resistance (Ω) 0.015 60 25 °C 125 °C 40 20 0.012 VGS = 4.5 V VGS = 10 V 0.009 0.006 0.003 0.000 0 0 20 40 60 80 0 100 20 40 ID - Drain Current (A) 60 80 100 120 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 3000 15 V GS - Gate-to-Source Voltage (V) 2500 Ciss C - Capacitance (pF) 4 VDS - Drain-to-Source Voltage (V) 80 g fs - Transconductance (S) 25 °C 2000 1500 1000 Coss Crss 500 VGS = 20 V ID = 25 A 12 9 6 3 0 0 0 8 16 24 32 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 4 40 0 15 30 45 60 75 Qg - Total Gate Charge (nC) Gate Charge Document Number: 71620 S-80272-Rev. C, 11-Feb-08 SUM60N04-12LT Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 100 VGS = 10 V ID = 20 A TJ = 150 °C I S - Source Current (A) r DS(on) - On-Resistance (Normalized) 1.6 1.2 0.8 TJ = 25 °C 10 0.4 0.0 - 50 1 - 25 0 25 50 75 100 125 150 175 0 0.3 TJ - Junction Temperature (°C) 0.9 1.2 1.4 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Junction Temperature 300 60 ID = 1 mA 100 V(BR)DSS (V) IAV (A) at TJ = 25 °C I Dav (A) 0.6 10 IAV (A) at TJ = 150 °C 50 40 1 30 - 50 0.1 0.00001 0.0001 0.01 0.001 tin (s) 0.1 1 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain-Source Breakdown vs. Junction Temperature Avalanche Current vs. Time 1.0 2000 0.8 1600 IF (µA) at 25 °C 1200 0.6 I F (µ A) V F (V) VF (V) at IF = 250 µA VF (V) at IF = 125 µA 0.4 800 0.2 400 0.0 - 50 - 25 0 25 50 75 100 125 150 175 0 0.0 0.2 0.4 0.6 0.8 TJ - Junction Temperature (°C) VF (V) Sense Diode Forward Voltage vs. Temperature Sense Diode Forward Voltage Document Number: 71620 S-80272-Rev. C, 11-Feb-08 1.0 www.vishay.com 5 SUM60N04-12LT Vishay Siliconix TYPICAL CHARACTERISTICS OF G-S CLAMPING DIODES 25 °C, unless otherwise noted 10 1 10-1 IG (mA) at 150 °C I G (mA) 10-2 10-3 IG (mA) at 25 °C 10-4 10-5 10-6 10-7 0 4 8 12 20 16 VGS (V) Gate-Source Voltage vs. Gate Current THERMAL RATINGS 500 75 10 µs I D - Drain Current (A) I D - Drain Current (A) 60 45 30 100 Limited by rDS(on)* 100 µs 10 1 ms TC = 25 °C Single Pulse 15 1 0.1 0 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) 1 * VGS Maximum Avalanche and Drain Current vs. Case Temperature 10 ms 100 ms DC 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -5 10 -4 10 -3 10-2 10 -1 1 3 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case www.vishay.com 6 Document Number: 71620 S-80272-Rev. C, 11-Feb-08 SUM60N04-12LT Vishay Siliconix APPLICATIONS +5V R1 180 kΩ 1% C3 0.1 µF R5, 18 kΩ IC1, LMV321 C1 560 pF R7 10 kΩ 1% R6, 560 Ω - Gate Output Signal + R4, 560 kΩ, 1 % R3, 18 kΩ INPUT R2 22 kΩ 1% SUM60N04-12LT C2 0.1 µF Signal Ground Power Ground Figure 1. The SUM60N04-12LT provides a non-committed diode to allow temperature sensing of the actual MOSFET chip. The addition of one simple comparator and a few other components is all that is required to implement a temperature protected MOSFET. Since it has a very tight tolerance on forward voltage, the forward voltage of the diode can be used to provide to shutdown signal. The diode forward voltage falls to around 0.4 V with a bias current of 250 µA when the MOSFET chip is close to the maximum permitted temperature value. The external comparator used to detect over temperature can also be used as a driver stage for the MOSFET, meaning that the on/off input is logic compatible, and can be driven from a logic gate. A typical circuit is shown in Figure 1. Here a LMV321 operational amplifier is used to drive the MOSFET, and as a comparator to when the maximum junction temperature is reached. The circuit will turn on once more when the chip has cooled to approximately 110 °C, and can cycle on and off until the fault is cleared or the power is removed. This circuit has assumed a 5 V rail is available, but the circuit could easily be adapted for a 12 V rail, for example. The LMV321 op amp was selected to give reasonable output current to drive the MOSFET at a reasonable price. The SC-70 package means that the protection circuit uses very little board space. However the limited output current means that it can only be used in slow switching applications, where one microsecond switching time and limited dv/dt immunity can be accepted. For PWM and other faster applications, a buffer should be added to drive the MOSFET, or the schematic in Figure 2 used to give fast switching speed. Document Number: 71620 S-80272-Rev. C, 11-Feb-08 The reference voltage for the trip point is derived from the 5 V rail, which should have reasonable voltage accuracy and stability (± 0.5 V). A voltage reference could be added if required, but the circuit is only intended to make the MOSFET invulnerable to drastic faults that might otherwise cause it to fail, not to give a precise shutdown point. 1 % resistors are used to provide a reference voltage of 0.545 V, giving a nominal rising trip point of around 155 °C, allowing for the hysteresis drop over R7. A 560 pF capacitor across the inputs of the comparator provides some noise immunity and gives a response time of around a micro second, just faster than the switching speed of the MOSFET in this circuit (faster response has diminishing returns as the turn-off time is fixed). This does have a side effect of introducing such a delay at turn-on. If this is an issue (although if this delay is an issue, the switching time should be reviewed also), a separate driver could be added using a comparator for over temperature detection only as shown in Figure 2. The diode is then left biased whenever the power is applied to the load and there is no turn-on delay. In a very noisy environment C1 should be increased and additional capacitors may also be required from each input of the comparator to ground and on the logic input. www.vishay.com 7 SUM60N04-12LT Vishay Siliconix would also allow a lower sourcing capability in the logic circuit providing the on/off signal and therefore should be used if input current requirements become a problem. The bias current of 250 µA nominal is derived from the input signal. In this manner, a simple comparator can be used as a driver for normal on/off operation and a fault detector circuit. The circuit used to provide the input signal must therefore be able to source 0.25 mA with no significant voltage drop. With the input high, bias current flows and as long as the forward voltage of the diode is higher than 0.465 V, the comparator output is high and the MOSFET is on. If the forward voltage of the diode drops below 0.465 V, the comparator output goes low and the MOSFET is turned off. The gate drive voltage can also be used as an output signal (if required) for logic to interpret and to signify that there is a fault. Note the cathode of the sensing diode should NOT be connected directly to the source of the MOSFET as the noise introduced by high currents in the source loop could affect operation of the sensing circuit. A separate signal ground should be used and connect to power ground at one point only. The LMV321 can provide a output current of 60 mA typical, which provides reasonable switching time for non-PWM applications. A 560 Ω resistor is added in series to protect the op amp and to prevent instability, but will result in switching times of several micro seconds. A lower value may be possible depending on layout, but may violate conditions recommended by the op amp manufacturer. Hysteresis is added by means of a resistor network around the comparator. Approximately 40 °C hysteresis is added using the components shown. This hysteresis could be reduced if necessary by increasing the value of R4. Another means of implementing hysteresis is to use the output of the comparator to provide some of the bias current for the sensing diode. When the comparator output is low (tripped/ off), the bias current is reduced by, say, 150 µA, causing the forward voltage to drop by around 50 mV. This concept A variation on this schematic is shown in Figure 2. Here a low cost comparator (again in a SOT-23 or SC-70) is used to provide a fault output signal only. The diode bias current is taken from the 5 V. In this manner the diode bias is applied at all times, so the noise filtering capacitor, C1 will not introduce a turn-on delay. The fault output signal could be used to enable the gate driver as shown, or fed to larger monitoring circuit to shutdown the MOSFET. +5V C2 0.1 µF R1 180 kΩ 1% C3 0.1 µF R5 10 kΩ DRIVER IN IC1, LMV331 R6 10 kΩ 1% ENABLE - + R4, 560 kΩ, 1 % R3, 18 kΩ R2 22 kΩ 1% SUB60N04-15LT C1 560 pF Signal Ground Power Ground Figure 2. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71620. www.vishay.com 8 Document Number: 71620 S-80272-Rev. 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