SUM60N04-12LT
New Product
Vishay Siliconix
Temperature Sensing MOSFET, N-Channel 40-V (D-S)
FEATURES
D
D
D
D
D
D
D
D
D
APPLICATIONS
Temperature-Sense Diodes for Thermal Shutdown
TrenchFETr Power MOSFET
175_C Maximum Junction Temperature
ESD Protected: 2000 V
Logic-Level Low On-Resistance
Avalanche Rated
Low Gate Charge
Fast Turn-On Time
5-Lead D2PAK
D Automotive
D Industrial
PRODUCT SUMMARY
V(BR)DSS (V)
40
rDS(on) (W)
ID (A)
0.009 @ VGS = 10 V
60a
0.012 @ VGS = 4.5 V
60
Notes
a. Package Limited
DESCRIPTION
The SUM60N04-12LT is a 40-V n-channel, 15-mW logic level
MOSFET in a 5-lead D2PAK package built on the
Vishay Siliconix proprietary high-cell density TrenchFET
technology.
Two anti-parallel electrically isolated poly-silicon diodes are
used to sense the temperature changes in the MOSFET.
The gate of the MOSFET is protected from high voltage
transients by two back-to-back poly-silicon zener diodes.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
D2Pak
TO-263, 5 Leads
D
T1
D1
G
D2
T2
1 2 3 4 5
S
G T1 D T2 S
Document Number: 71620
S-03830—Rev. A, 28-May-01
N-Channel MOSFET
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SUM60N04-12LT
New Product
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
"20
VGS Clamp Current
IG
Continuous Drain Current (TJ = 175_C)
_
Tc = 100_C
L = 0.1 mH
mA
ID
50
IAR
50
A
EAR
125
Source-to-Anode Voltage
VSA
100
Source-to-Cathode Voltage
VSC
100
TC = 25_C
Maximum Power Dissipationa
TA =
Operating Junction and Storage Temperature Range
25_Cd
V
60a
Tc = 25_C
Avalanche Current
Repetitive Avalanche Energy
50
Unit
mJ
V
110
PD
TJ, Tstg
3.75
–55 to 175
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Junction-to-Ambientd
RthJA
40
Junction-to-Case
RthJC
1.35
Unit
_
_C/W
Notes:
a. Package limited.
b. Duty Cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1-inch square PCB FR4.
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Document Number: 71620
S-03830—Rev. A, 28-May-01
SUM60N04-12LT
New Product
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 1 mA
40
VGS
VDS = 0 V, IG = 20 mA
10
1
Typ
Max
Unit
20
V
Static
Drain-Source Breakdown Voltage
VGS Clamp Voltage
VGS(th)
VDS = VGS, IDS = 1 mA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "5 V
Zero Gate Voltage Drain Current
IDSS
Gate Threshold Voltage
Zero Gate Voltage Drain Current
IDSS
VDS = 35 V, VGS = 0 V
1
VDS = 35 V, VGS = 0 V, TJ = 125_C
50
VDS = 35 V, VGS = 0 V, TJ = 175_C
250
VGS = 10 V, ID = 20 A
Drain-Source On-State Resistancea
rDS(on)
0.0075
0.0135
VGS = 10 V, ID = 20 A, TJ = 175_C
0.018
Sense Diode Forward Voltage Increase
Forward Transconductancea
0.0095
nA
mA
m
0.009
VGS = 10 V, ID = 20 A, TJ = 125_C
VGS = 4.5 V, ID = 20 A
Sense Diode Forward Voltage
2
"250
W
0.012
VFD1
IF = 250 mA
675
735
VFD2
IF = 250 mA
675
735
DVF
From IF = 125 mA to IF = 250 mA
25
50
gfs
VDS = 15 V, ID = 20 A
35
mV
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain
Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
1920
VGS = 0 V, VDS = 25 V, f = 1 MHz
560
pF
210
51
VDS = 20 V, VGS = 10 V, ID = 25 A
70
5.5
nC
Qgd
12
td(on)
20
40
tr
VDD = 20 V, RL = 0.8 W
70
120
td(off)
ID ] 25 A, VGEN = 10 V, RG = 2.5 W
35
70
20
40
tf
ns
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
IS
60
Pulsed Current
ISM
240
Forward Voltagea
VSD
IF = 60 A, VGS = 0 V
trr
IF = 60 A, di/dt = 100 A/ms
Reverse Recovery Time
A
40
1.4
V
60
ns
Notes:
a
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c
Independent of operating temperature.
Document Number: 71620
S-03830—Rev. A, 28-May-01
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SUM60N04-12LT
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
250
200
VGS = 10 thru 7 V
TC = –55_C
6V
160
I D – Drain Current (A)
I D – Drain Current (A)
200
5V
150
100
4V
50
25_C
125_C
120
80
40
1, 2 V
3V
0
0
0
2
4
6
8
10
0
VDS – Drain-to-Source Voltage (V)
2
4
6
8
VGS – Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
0.018
80
r DS(on) – On-Resistance ( W )
g fs – Transconductance (S)
TC = –55_C
60
25_C
125_C
40
20
0
0.015
0.012
VGS = 4.5 V
VGS = 10 V
0.009
0.006
0.003
0.000
0
20
40
60
80
100
0
20
40
ID – Drain Current (A)
Capacitance
100
120
Gate Charge
15
V GS – Gate-to-Source Voltage (V)
2500
C – Capacitance (pF)
80
ID – Drain Current (A)
3000
Ciss
2000
1500
1000
Coss
Crss
500
0
VGS = 20 V
ID = 25 A
12
9
6
3
0
0
8
16
24
32
VDS – Drain-to-Source Voltage (V)
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4
60
40
0
15
30
45
60
75
Qg – Total Gate Charge (nC)
Document Number: 71620
S-03830—Rev. A, 28-May-01
SUM60N04-12LT
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
100
TJ = 150_C
1.6
I S – Source Current (A)
r DS(on) – On-Resistance (W)
(Normalized)
VGS = 10 V
ID = 20 A
1.2
0.8
TJ = 25_C
10
0.4
0.0
–50
1
–25
0
25
50
75
100
125
150
175
0
0.3
TJ – Junction Temperature (_C)
0.9
1.2
1.4
Drain-Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
300
60
ID = 1 mA
100
V(BR)DSS (V)
IAV (A) @ TJ = 25_C
I Dav (A)
0.6
VSD – Source-to-Drain Voltage (V)
10
IAV (A) @ TJ = 150_C
50
40
1
30
–50
0.1
0.00001
0.001
0.01
tin (Sec)
0.0001
0.1
1
–25
0
25
50
75
100
125
150
175
TJ – Junction Temperature (_C)
Sense Diode Forward Voltage
vs. Temperature
Sense Diode Forward Voltage
1.0
2000
0.8
1600
IF (mA) @ 25_C
0.6
1200
I F ( mA)
V F (V)
VF (V) @ IF = 250 mA
VF (V) @ IF = 125 mA
0.4
0.2
0.0
–50
800
400
–25
0
25
50
75
100
125
TJ – Junction Temperature (_C)
Document Number: 71620
S-03830—Rev. A, 28-May-01
150
175
0
0.0
0.2
0.4
0.6
0.8
1.0
VF (V)
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SUM60N04-12LT
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS OF GĆS CLAMPING DIODES (25_C UNLESS NOTED)
Gate-Source Voltage vs. Gate Current
10
1
10–1
IG (mA) @ 150_C
I G (mA)
10–2
10–3
IG (mA) @ 25_C
10–4
10–5
10–6
10–7
0
4
8
12
20
16
VGS (V)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
500
75
I D – Drain Current (A)
I D – Drain Current (A)
10 ms
60
45
30
100
Limited
by rDS(on)
100 ms
10
1 ms
10 ms
100 ms
dc
TC = 25_C
Single Pulse
15
0
1
0
25
50
75
100
125
150
175
0.1
1
10
100
VDS – Drain-to-Source Voltage (V)
TC – Case Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–5
10–4
10–3
10–2
10–1
1
3
Square Wave Pulse Duration (sec)
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Document Number: 71620
S-03830—Rev. A, 28-May-01
SUM60N04-12LT
New Product
Vishay Siliconix
APPLICATIONS
+5 V
R1
180 kW
1%
C3
0.1 mF
R5, 18 kW
IC1, LMV321
C1
560 pF
R7
10 kW
1%
R6, 560 W
–
Gate
Output
Signal
+
R4, 560 kW, 1%
R3, 18 kW
INPUT
R2
22 kW
1%
SUM60N04-12LT
C2
0.1 mF
Signal Ground
Power Ground
FIGURE 1.
The SUM60N04-12LT provides a non-committed diode to
allow temperature sensing of the actual MOSFET chip. The
addition of one simple comparator and a few other
components is all that is required to implement a temperature
protected MOSFET. Since it has a very tight tolerance on
forward voltage, the forward voltage of the diode can be used
to provide to shutdown signal. The diode forward voltage falls
to around 0.4 V with a bias current of 250 mA when the
MOSFET chip is close to the maximum permitted temperature
value. The external comparator used to detect over
temperature can also be used as a driver stage for the
MOSFET, meaning that the on/off input is logic compatible,
and can be driven from a logic gate.
A typical circuit is shown in Figure 1. Here a LMV321
operational amplifier is used to drive the MOSFET, and as a
comparator to when the maximum junction temperature is
reached. The circuit will turn on once more when the chip has
cooled to approximately 110_C, and can cycle on and off until
the fault is cleared or the power is removed. This circuit has
assumed a 5-V rail is available, but the circuit could easily be
adapted for a 12-V rail, for example.
The LMV321 op amp was selected to give reasonable output
current to drive the MOSFET at a reasonable price. The SC-70
package means that the protection circuit uses very little board
space. However the limited output current means that it can
only be used in slow switching applications, where one
microsecond switching time and limited dv/dt immunity can be
Document Number: 71620
S-03830—Rev. A, 28-May-01
accepted. For PWM and other faster applications, a buffer
should be added to drive the MOSFET, or the schematic in
Figure 2 used to give fast switching speed.
The reference voltage for the trip point is derived from the 5-V
rail, which should have reasonable voltage accuracy and
stability (" 0.5 V). A voltage reference could be added if
required, but the circuit is only intended to make the MOSFET
invulnerable to drastic faults that might otherwise cause it to
fail, not to give a precise shutdown point. 1% resistors are
used to provide a reference voltage of 0.545 V, giving a
nominal rising trip point of around 155_C, allowing for the
hysteresis drop over R7.
A 560-pF capacitor across the inputs of the comparator
provides some noise immunity and gives a response time of
around a micro second, just faster than the switching speed of
the MOSFET in this circuit (faster response has diminishing
returns as the turn-off time is fixed). This does have a side
effect of introducing such a delay at turn-on. If this is an issue
(although if this delay is an issue, the switching time should be
reviewed also), a separate driver could be added using a
comparator for over temperature detection only as shown in
Figure 2. The diode is then left biased whenever the power is
applied to the load and there is no turn-on delay. In a very noisy
environment C1 should be increased and additional
capacitors may also be required from each input of the
comparator to ground and on the logic input.
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SUM60N04-12LT
New Product
Vishay Siliconix
The bias current of 250-mA nominal is derived from the input
signal. In this manner, a simple comparator can be used as a
driver for normal on/off operation and a fault detector circuit.
The circuit used to provide the input signal must therefore be
able to source 0.25 mA with no significant voltage drop.
The LMV321 can provide a output current of 60-mA typical,
which provides reasonable switching time for non-PWM
applications. A 560-W resistor is added in series to protect the
op amp and to prevent instability, but will result in switching
times of several micro seconds. A lower value may be possible
depending on layout, but may violate conditions
recommended by the op amp manufacturer.
Hysteresis is added by means of a resistor network around the
comparator. Approximately 40_C hysteresis is added using
the components shown. This hysteresis could be reduced if
necessary by increasing the value of R4. Another means of
implementing hysteresis is to use the output of the comparator
to provide some of the bias current for the sensing diode. When
the comparator output is low (tripped/off), the bias current is
reduced by, say, 150 mA, causing the forward voltage to drop
by around 50 mV. This concept would also allow a lower
sourcing capability in the logic circuit providing the on/off signal
and therefore should be used if input current requirements
become a problem.
With the input high, bias current flows and as long as the
forward voltage of the diode is higher than 0.465 V, the
comparator output is high and the MOSFET is on. If the forward
voltage of the diode drops below 0.465 V, the comparator
output goes low and the MOSFET is turned off. The gate drive
voltage can also be used as an output signal (if required) for
logic to interpret and to signify that there is a fault. Note the
cathode of the sensing diode should NOT be connected
directly to the source of the MOSFET as the noise introduced
by high currents in the source loop could affect operation of the
sensing circuit. A separate signal ground should be used and
connect to power ground at one point only.
A variation on this schematic is shown in Figure 2. Here a low
cost comparator (again in a SOT-23 or SC-70) is used to
provide a fault output signal only. The diode bias current is
taken from the 5 V. In this manner the diode bias is applied at all
times, so the noise filtering capacitor, C1 will not introduce a
turn-on delay. The fault output signal could be used to enable
the gate driver as shown, or fed to larger monitoring circuit to
shutdown the MOSFET.
+5 V
C2
0.1 mF
R1
180 kW
1%
C3
0.1 mF
R5
10 kW
DRIVER
IN
IC1, LMV331
R6
10 kW
1%
–
ENABLE
+
R4, 560 kW, 1%
R3, 18 kW
R2
22 kW
1%
SUB60N04-15LT
C1
560 pF
Signal Ground
Power Ground
FIGURE 2.
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Document Number: 71620
S-03830—Rev. A, 28-May-01