SUD40N04-10A New Product Vishay Siliconix N-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.010 @ VGS = 10 V 40 0.014 @ VGS = 4.5 V 40 V(BR)DSS (V) 40 D TO-252 G Drain Connected to Tab G D S Top View S N-Channel MOSFET Order Number: SUD40N04-10A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Symbol Limit Drain-Source Voltage Parameter VDS 40 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 175_C) _ TC = 25_C TC = 100_C Pulsed Drain Current Avalanche Current Unit V 40a ID 40a IDM 100 IAR 30 A Repetitive Avalanche Energyb L = 0.1 mH EAR 45 Power Dissipation TC = 25_C PD 71c W TJ, Tstg –55 to 175 _C Operating Junction and Storage Temperature Range mJ THERMAL RESISTANCE RATINGS Parameter Symbol t 10 sec. Junction-to-Ambientd Junction-to-Case Steady State RthJA RthJC Typical Maximum 15 18 40 50 1.75 2.1 Unit _C/W C/W Notes: a. Package limited. b. Duty cycle 1%. c. See SOA curve for voltage derating. d. Surface mounted on 1” FR4 board. Document Number: 71420 S-03269—Rev. A, 26-Mar-01 www.vishay.com 1 SUD40N04-10A New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 40 VGS(th) VDS = VGS, IDS = 250 mA 1 IGSS VDS = 0 V, VGS = 20 V 100 VDS = 32 V, VGS = 0 V 1 VDS = 32 V, VGS = 0 V, TJ = 125_C 50 VDS = 32 V, VGS = 0 V, TJ = 175_C 150 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS ID(on) rDS(on) gfs VDS = 5 V, VGS = 10 V 3 40 VGS = 10 V, ID = 40 A 0.0075 0.010 0.012 0.016 VGS = 10 V, ID = 40 A, TJ = 175_C 0.015 0.020 VGS = 4.5 V, ID = 10 A 0.011 0.014 VGS = 4.5 V, ID = 10 A, TJ = 125_C 0.018 0.022 VGS = 4.5 V, ID = 10 A, TJ = 175_C 0.022 0.028 20 nA mA m A VGS = 10 V, ID = 40 A, TJ = 125_C VDS = 15 V, ID = 40 A V 40 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 145 Total Gate Chargec Qg 35 Gate-Source Chargec Qgs Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 1700 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 40 A Qgd 370 pF 6 nC 8 td(on) 14 30 tr VDD = 20 V, RL = 0.5 W 7.5 15 td(off) ID 40 A, VGEN = 10 V, RG = 2.5 W 30 60 14 30 tf ns Source-Drain Ciode Ratings and Characteristics (TC = 25_C)b Continuous Current Is 40 Pulsed Current ISM 100 Forward Voltagea VSD IF = 40 A, VGS = 0 V 1.0 1.50 V trr IF = 40 A, di/dt = 100 A/ms 30 60 ns Reverse Recovery Time A Notes: a. Pulse test; pulse width 300 ms, duty cycle 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71420 S-03269—Rev. A, 26-Mar-01 SUD40N04-10A New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 100 120 80 5V 90 I D – Drain Current (A) I D – Drain Current (A) VGS = 10 thru 6 V 60 4V 60 40 TC = 125_C 30 20 25_C 3V 0 –55_C 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 0.030 80 r DS(on) – On-Resistance ( Ω ) g fs – Transconductance (S) TC = –55_C 25_C 60 125_C 40 20 0.025 0.020 0.015 VGS = 4.5 V VGS = 10 V 0.010 0.005 0 0.000 0 20 40 60 80 100 0 20 40 80 100 ID – Drain Current (A) VGS – Gate-to-Source Voltage (V) Capacitance Gate Charge 3000 20 V GS – Gate-to-Source Voltage (V) 2500 C – Capacitance (pF) 60 Ciss 2000 1500 1000 Coss 500 Crss 0 0 VGS = 20 V ID = 40 A 16 12 8 4 0 8 16 24 32 VDS – Drain-to-Source Voltage (V) Document Number: 71420 S-03269—Rev. A, 26-Mar-01 40 0 10 20 30 40 50 60 Qg – Total Gate Charge (nC) www.vishay.com 3 SUD40N04-10A New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Junction Temperature 2.5 100 2.0 TJ = 150_C I S – Source Current (A) r DS(on) – On-Resistance ( Ω ) (Normalized) VGS = 10 V ID = 30 A 1.5 1.0 TJ = 25_C 10 0.5 0.0 –50 1 –25 0 25 50 75 100 125 150 175 0 TJ – Junction Temperature (_C) 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 1000 50 Limited by rDS(on) 100 I D – Drain Current (A) I D – Drain Current (A) 40 30 20 10 0 10 ms 100 ms 10 1 1 ms 10 ms 100 ms dc TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71420 S-03269—Rev. A, 26-Mar-01