Si7368DP New Product Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D Low rDS x Qg Figure of Merit D Optimized For High Frequency Conversion PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0055 @ VGS = 10 V 20 0.0085 @ VGS = 4.5 V 16 APPLICATIONS D Low-Side MOSFET in Synchronous Buck DC/DC Converters in Desktops D Low Output Voltage Synchronous Rectifier PowerPAKt SO-8 D S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 G D 8 D 7 Oredering Information: Si7368DP-T1 D 6 D S 5 N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "16 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD 13 17 IDM Continuous Source Current (Diode Conduction)a V 20 ID 10 A 50 4.1 1.4 5 1.7 3.2 1.1 TJ, Tstg Unit W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Steady State Steady State RthJA RthJC Typical Maximum 20 25 53 70 3.4 4.5 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72154 S-31248—Rev. B, 16-Jun-03 www.vishay.com 1 Si7368DP New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.7 IGSS Typ Max Unit 1.8 V VDS = 0 V, VGS = "16 V "100 nA VDS = 16 V, VGS = 0 V 1 VDS = 16 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS w 5 V, VGS = 10 V rDS(on) Forward Transconductancea Diode Forward Voltagea mA 30 A VGS = 10 V, ID = 20 A 0.0043 0.0055 VGS = 4.5 V, ID = 16 A 0.0065 0.0085 gfs VDS = 6 V, ID = 20 A 48 VSD IS = 4.5 A, VGS = 0 V 0.7 1.1 17 25 W S V Dynamicb Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 20 A nC Gate-Source Charge Qgs Gate-Drain Charge Qgd 4.5 Gate Resistance Rg 1.5 td(on) 22 tr 20 30 65 100 17 30 40 80 Turn-On Delay Time Rise Time Turn-Off Delay Time VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 4.5 IF = 4.1 A, di/dt = 100 A/ms W 35 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 60 60 VGS = 10 thru 3 V 50 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 10 40 30 20 TC = 125_C 25_C 10 2V -55_C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Document Number: 72154 S-31248—Rev. B, 16-Jun-03 Si7368DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 3000 0.008 2400 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 0.010 VGS = 4.5 V 0.006 VGS = 10 V 0.004 0.002 Ciss 1800 1200 Coss Crss 600 0.000 0 0 10 20 30 40 50 0 4 ID - Drain Current (A) Gate Charge 16 20 On-Resistance vs. Junction Temperature 1.6 VDS = 10 V ID = 20 A 5 r DS(on) - On-Resistance ( W) (Normalized) V GS - Gate-to-Source Voltage (V) 12 VDS - Drain-to-Source Voltage (V) 6 4 3 2 VGS = 10 V ID = 20 A 1.4 1.2 1.0 1 0 0 5 10 15 20 0.8 -50 25 -25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.030 r DS(on) - On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 0.024 0.018 ID = 20 A 0.012 0.006 0.000 1 0.00 25 TJ - Junction Temperature (_C) 60 I S - Source Current (A) 8 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) Document Number: 72154 S-31248—Rev. B, 16-Jun-03 1.0 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si7368DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 200 0.2 160 -0.0 120 Power (W) V GS(th) Variance (V) ID = 250 mA -0.2 80 -0.4 40 -0.6 -0.8 -50 -25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (_C) 0.1 1 10 Time (sec) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 1 ms I D - Drain Current (A) 10 10 ms 1 100 ms 1s 10 s 0.1 dc TC = 25_C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 53_C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 - 4 www.vishay.com 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72154 S-31248—Rev. B, 16-Jun-03 Si7368DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 Document Number: 72154 S-31248—Rev. B, 16-Jun-03 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5