Si7884DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 20 0.0095 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching D 100% Rg Tested APPLICATIONS D Sychronous Rectifier PowerPAK SO-8 D S 6.15 mm 1 2 5.15 mm S 3 S 4 G G D 8 7 D 6 S D 5 D N-Channel MOSFET Bottom View Ordering Information: Si7884DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 40 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current Avalanche Current L = 0.1 mH Continuous Source Current (Diode Conduction)a TA = 70_C Operating Junction and Storage Temperature Range 12 16 10 50 IAS 30 PD V 20 IDM IS TA = 25_C Maximum Power Dissipationa ID A 4.7 1.7 5.2 1.9 3.3 1.2 TJ, Tstg Unit -55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 19 24 52 65 1.2 1.8 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71855 S-32077—Rev. D, 13-Oct-03 www.vishay.com 1 Si7884DP Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS Typ Max Unit 3.0 V VDS = 0 V, VGS = "20 V "100 nA VDS = 32 V, VGS = 0 V 1 VDS = 32 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea 50 VDS w 5 V, VGS = 10 V rDS(on) mA A VGS = 10 V, ID = 14 A 0.0055 0.007 VGS = 4.5 V, ID = 12 A 0.0075 0.0095 gfs VDS = 15 V, ID = 14 A 50 VSD IS = 2.8 A, VGS = 0 V 0.75 1.1 18.5 28 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time nC 6 7.5 0.8 1 td(on) 15 30 tr 10 20 50 100 20 40 30 60 Rise Time Turn-Off Delay Time VDS = 20 V, VGS = 5 V, ID = 14 A 0.2 VDD = 20 V, RL = 20 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 2.8 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 3V 20 10 30 20 TC = 125_C 10 25_C -55_C 2V 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 5 6 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) Document Number: 71855 S-32077—Rev. D, 13-Oct-03 Si7884DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 3000 2500 VGS = 4.5 V 0.008 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.010 VGS = 10 V 0.006 0.004 0.002 Ciss 2000 1500 1000 Coss 500 0.000 Crss 0 0 10 20 30 40 50 0 8 ID - Drain Current (A) Gate Charge 32 40 On-Resistance vs. Junction Temperature 2.0 VDS = 20 V ID = 14 A r DS(on) - On-Resistance ( W) (Normalized) V GS - Gate-to-Source Voltage (V) 24 VDS - Drain-to-Source Voltage (V) 10 8 6 4 2 VGS = 10 V ID = 14 A 1.6 1.2 0.8 0.4 0 0 7 14 21 28 0.0 -50 35 -25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.020 r DS(on) - On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ - Junction Temperature (_C) 50 I S - Source Current (A) 16 ID = 14 A 0.016 0.012 0.008 0.004 0.000 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 71855 S-32077—Rev. D, 13-Oct-03 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si7884DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Juncion-To-Ambient 0.6 100 0.4 80 ID = 250 mA Power (W) V GS(th) Variance (V) 0.2 -0.0 -0.2 60 40 -0.4 -0.6 20 -0.8 -1.0 -50 0 -25 0 25 50 75 100 125 150 0.001 0.1 0.01 10 1 Time (sec) TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 55_C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10 - 4 www.vishay.com 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71855 S-32077—Rev. D, 13-Oct-03