Si4320DY New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES D TrenchFETr Gen II D Ultra Low On-Resistance Using High Density TrenchFET Power MOSFET Technology PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.003 @ VGS = 10 V 25 APPLICATIONS 0.004 @ VGS = 4.5 V 22 D Synchronous Buck Low-Side - Notebook - Server - Workstation D Synchronous Rectifier - POL D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4320DY Si4320DY-T1 (with Tape and Reel) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) ID IS Avalanch Current iAS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V 25 17 20 13 IDM Continuous Source Current (Diode Conduction)a Unit 70 A 2.9 1.3 50 3.5 1.6 2.2 1 TJ, Tstg W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 29 35 67 80 13 16 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72212 S-03921—Rev. A, 19-May-03 www.vishay.com 1 Si4320DY New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS Typ Max Unit 3.0 V VDS = 0 V, VGS = "20 V "100 nA VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS w 5 V, VGS = 10 V rDS(on) Forward Transconductancea Diode Forward Voltagea mA 30 A VGS = 10 V, ID = 25 A 0.0024 0.003 VGS = 4.5 V, ID = 22 A 0.0032 0.004 gfs VDS = 15 V, ID = 25 A 110 VSD IS = 2.9 A, VGS = 0 V 0.72 W S 1.1 V Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance RG Turn-On Delay Time 6500 VDS = 15 V, VGS = 4.5 V, ID = 20 A 610 VDS = 15 V, VGS = 4.5 V, ID = 20 A 45 tf Source-Drain Reverse Recovery Time trr nC W 1.1 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time nC 16 f = 1.0 MHz tr Turn-Off Delay Time 70 20 VDS = 15 V, V VGS = 4.5 45V V, ID = 20 A td(on) Rise Time pF 930 IF = 2.9 A, di/dt = 100 A/ms 27 40 21 35 107 160 43 65 45 70 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 60 60 VGS = 10 thru 4 V 50 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 10 40 30 20 TC = 125_C 10 25_C 3V 0 0.0 0.4 0.8 1.2 -55_C 1.6 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 2.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) Document Number: 72212 S-03921—Rev. A, 19-May-03 Si4320DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 8500 0.004 6800 VGS = 4.5 V C - Capacitance (pF) r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 0.005 0.003 VGS = 10 V 0.002 Ciss 5100 3400 0.001 1700 0.000 0 Coss Crss 0 10 20 30 40 50 0 6 Gate Charge 24 30 On-Resistance vs. Junction Temperature 6 1.6 VDS = 15 V ID = 20 A 5 r DS(on) - On-Resistance ( W) (Normalized) V GS - Gate-to-Source Voltage (V) 18 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 4 3 2 1 0 0 10 20 30 40 50 VGS = 10 V ID = 25 A 1.4 1.2 1.0 0.8 0.6 -50 60 -25 0 Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.015 r DS(on) - On-Resistance ( W ) 50 10 TJ = 150_C 1 TJ = 25_C 0.012 ID = 25 A 0.009 0.006 0.003 0.000 0.1 0.00 25 TJ - Junction Temperature (_C) Qg - Total Gate Charge (nC) I S - Source Current (A) 12 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) Document Number: 72212 S-03921—Rev. A, 19-May-03 1.0 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si4320DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 60 ID = 250 mA 50 -0.0 40 Power (W) V GS(th) Variance (V) 0.2 -0.2 -0.4 30 20 -0.6 10 -0.8 -1.0 -50 -25 0 25 50 75 100 125 0 10 - 2 150 10 - 1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 10 10 ms 100 ms 1 1s 0.1 10 s TC = 25_C Single Pulse dc 0.01 10 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 67_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 - 4 www.vishay.com 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72212 S-03921—Rev. A, 19-May-03 Si4320DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 Document Number: 72212 S-03921—Rev. A, 19-May-03 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5