Power Matters.TM Improving the Performance of your DC-DC Forward Converter using I2MOSTM MOSFET Technology Microsemi Space Forum 2015 Al Ortega, Marketing Manager © 2015 Microsemi Corporation. Company Proprietary 1 Contents I2MOS Advantages Single Event Effect Tests DC- DC Design performance advantages • Efficiency • Avalanche Energy Summary © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 2 I2MOS advantages Highest available SEE performance, 85- 90 MeV at full rated BVDss Highest Avalanche capability: 5X greater than competition TID (Total Ionizing Dose) Rating: 100Krad- 500Krad (depending on specific device) Commerce Rating: 9A515.e • Most Euro countries will not need a license! Competitive pricing on new designs © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 3 I2MOS FOM versus Competition © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 4 SEE results- Microsemi vs. Competitor SEE Response - R6,150V,N,MR 175 150 Bias VDS (Volts ) 125 Kr Ion; LET=39±5%; 50±5%µm; 410±5%MeV Xe Ion; LET=61±5%; 66±7.5%µm; 825±5%MeV 100 75 50 25 0 0 -5 -10 -15 -20 Au Ion; LET=90±5%; 80±5%µm; 1470±5%MeV Bias VGS (Volts) -25 SEE Response - R6,200V,N,MR 225 200 175 150 125 100 75 50 25 0 Bias VDS (Volts ) Xe Ion; LET=42±5%; 205±5%µm; 2450±5%MeV Xe Ion; LET=61±5%; 66±7.5%µm; 825±5%MeV 0 -5 -10 -15 -20 IR (R6) -25 Bias VGS (Volts) Microsemi (I2MOS) © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 5 I2MOSTM MOS P/N Structure MRH BVDSS/1 Channel ID @ 25C 0 (V) MRH 20 Package Screening RAD LEVEL U3 S R R= 100K F= 300K G= 500K (A) N 22 Microsemi 20= 200V N U3= SMD0.5 S= JANS Rad- Hard 10= 100V P T2= TO- 39 V= JANTXV 13= 130V T3= TO- 257 C= EDU 06= 60V U5= LCC-18 03= 30V C= die MOSFET © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 6 I2MOSTM Planned Products Phase 1: I2MOSTM portfolio, N- Ch, Sz 3 Bvdss (V) Similar JEDEC Number Industry Equivalent MSC p/n 150 200 250 2N7589U3 2N7591U3 2N7593U3 IRHNJ67134 IRHNJ67230 IRHNJ67234 MRH15N19U3 MRH20N16U3 MRH25N15U3 SMD0.5 Phase 2: I2MOSTM portfolio, N- Ch, Sz 5.5 Bvdss (V) Similar JEDEC Number 150 150 200 200 250 250 2N7582T1 2N7581U2 2N7584T1 2N7583U2 2N7586T1 2N7585U2 Industry Equivalent RH2 Base MSC p/n Package IRHMS67164 IRHNA67164 IRHMS67260 IRHNA67260 IRHMS67264 IRHNA67264 MRH15N45T1 MRH15N56U1 MRH20N45T1 MRH20N56U1 MRH25N45T1 MRH25N56U1 TO-254 SMD-2 TO-254 SMD-2 TO-254 SMD-2 © 2015 Microsemi Corporation. Company Proprietary TO-254 Power Matters.TM 7 Efficiency Performance of I2MOS DC-DC Forward Converter (Resonant Reset Topology) MRH25N15U3 vs. IRHNJ67234 © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 8 DC-DC Criteria Create a Circuit to Reveal Differences in MOSFET Power Losses Parallel-Inductor Isolated Forward DC-DC Converter Improved Efficiency • Resonant Transformer Reset • Lower DC Losses in Inductors and Schottky Rectifiers Use Vdd = 50Vdc • Peak of Resonant Reset Voltage Will Be: Vdd + (Id(pk) * Lm / Cr) – Lm is Power Transformer Magnetizing Inductance (~120uH) – Cr is the Resonance Capacitance = Coss || Cj (Ns/Np) * (~810pF) – Worst Case Resonance Peak at fsw = 350kHz and Vout = 5.0Vdc (~120Vpk) © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 9 Efficiency Test Criteria Voltage De- Rating= 50% • Use Microsemi MRH25N15U3 and IR IRHNJ67234, 250V devices. (200V Device May Be Used For Higher Efficiency With Lower Voltage Margin.) 100W Maximum Output Power • 20A Maximum Output Current – 66W For Vout = 3.3Vdc – 100W For Vout = 5.0Vdc © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 10 Efficiency Test Circuit Schematic © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 11 Efficiency Test Circuit Features Circuit Used For Power Switch Efficiency Comparison: • Circuit Uses U3 Packages For All Power Functions – Small Size – Ease of Thermal Management • Output Uses Paralleled Output Stage For Increased Efficiency – Schottkies and Inductors Share Current ~50:50 – DC Power Losses Reduced by ~1/4 - 1/3! • • • • Optimized for 3.3Vdc < Vout < 5Vdc Optimized For 1A < Iout < 20A Optimized For 350kHz < fsw < 500kHz Uses COTS Micrel MIC4424 Gate Driver IC – Rad-Hard Equivalents Available from Intersil © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 12 Efficiency Test Parameters DC Output (Vout) Set By Varying Input Duty Cycle • Duty Cycle = Desired Vout * (Ns/Np) / Vdd Efficiency: h = Pout / (Pin + Pbias) = (Vout * Iout) /((Vdd * Idd) + (Vbias * Ibias)) Iout = Set, Varied from 1A to 20A Vdd = Set, Constant = 50Vdc Vbias = Set, Constant = 12Vdc Vout is Set By Varying the Input Duty Cycle Idd and Ibias Are Measured at Each Operating Point © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 13 MOSFET Losses Key Contributors to Power MOSFET Switch Losses: • DC Losses: Id(rms)2 * Rds(on) * D • AC Losses: Gate + Switching – Gate Input Losses: Qgt * Vbias * fsw – Drain Switching Losses: ~ Vdd * Id(rms) * (tr + tf) * fsw / 2) + (Coss * Vdd2 * fsw) © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 14 Forward Converter Design Parameters Duty Cycle = D = (Vout / Vin) * (Ns / Np) = ton / toff Id(pk) = (Id(avg) / D) + (0.5 * (Vdd * ton) / Lm) Vres(pk) = Vdd + Id(pk) * (Lm / Cr)0.5 tres = p * (Lm * Cr)0.5 Cr = Coss + (Cj / (Np/Ns)) • Cj is the Output Schottky Junction Capacitance Vds (V) Vres(pk) Vdd 0 Id (A) ton tres time toff Id(pk) Id(avg)/D 0 time © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 15 Measured Drain-Source Voltages Vout = 5.0Vdc, Iout = 1Adc, fsw = 350kHz Vout = 5.0Vdc, Iout = 20Adc, fsw = 350kHz VDS(pk) = 122V VDS(pk) = 148V © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 16 Efficiency Parameters From Data Sheet Parameters: • Rds(ON) – MRH25N15U3 – 175mW max. – IRHNJ67234 – 210mW max. – IR Device 20% Higher Than Microsemi • Qgt – MRH25N15U3 – 32nC typ. (est. 40nC max.) – IRHNJ67234 – 50nC max. (est. 40nC typ.) • Coss – MRH25N15U3 – 275pF typ. – IRHNJ67234 – 187pF typ. © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 17 Efficiency Data- +3.3Vout, 350 Khz. 100W Forward Converter Efficency: Vdd = 50Vdc, Vout = 3.3Vdc, fsw = 350kHz 84% Conversion Efficiency 82% 80% 78% 76% MRH25N15U3 IRHNJ67234 74% 72% 0 5 10 15 20 Output Current (Adc) At higher currents the improvement in conduction losses provide an advantage. © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 18 Efficiency Data, Vout = 5.0V, 350 Khz. 100W Forward Converter Efficency: V dd = 50Vdc, Vout = 5.0Vdc, fsw = 350kHz 88% Conversion Efficiency 86% 84% 82% 80% MRH25N15U3 IRHNJ67234 78% 76% 0 5 10 15 20 Output Current (Adc) At higher currents the improvement in conduction losses is slightly better at 5.0Vout vs. 3.3Vout. © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 19 Efficiency Data, +3.3Vout, 500 Khz. 100W Forward Converter Efficency: Vdd = 50Vdc, Vout = 3.3Vdc, fsw = 500kHz 84% Conversion Efficiency 82% 80% 78% 76% MRH25N15U3 IRHNJ67234 74% 72% 0 5 10 15 20 Output Current (Adc) At 500 Khz. There are more switiching losses in both parts but I2MOS part maintains the advantage. © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 20 Efficiency Data, 5.0Vout, 500 Khz. 100W Forward Converter Efficency: V dd = 50Vdc, Vout = 5.0Vdc, fsw = 500kHz 88% 87% Conversion Efficiency 86% 85% 84% 83% 82% 81% MRH25N15U3 IRHNJ67234 80% 79% 78% 0 5 10 15 20 Output Current (Adc) Efficiency improvements @ higher currents when Vout = 5.0V © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 21 Vds (V) VBR(DSS) Vdd 0 Id (A) ton tav time Id(pk) 0 time Avalanche Energy Performance MRH25N15U3 vs. IRHNJ67234 © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 22 Avalanche Basics Avalanche Performance Indicates VBR(DSS) Vds (V) Ruggedness of MOSFET • Energy Handling Capability – Repetitive – Single Pulse – Specified in Joules (V * I * t) “Unconstrained” Inductors Cause Vdd 0 ton Id (A) Excursions to VBR(DSS) • Energy ~ (L * Id(pk)2 / 2) * (1 – (Vdd / VBR(DSS)) • Junction Dissipates Enormous Instantaneous Power – If VBR(DSS) = 250V and Id(pk) = 10A, Pinst = 2500W! Vds “Ringout” Due to Residual Energy in L and L-Coss Resonant Circuit tav time Id(pk) 0 time The Greater the Avalanche Energy Rating, The Better © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 23 Data sheet Specs & Avalanche Test Circuit Part # Eas Ear MRH25N15U3 15 mJ 300 mJ IRHNJ67234 56 mJ 7.5 mJ © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 24 Avalanche Test PCB Board Size = 5.8 x 4.1 x 0.063”, 4 Layer FR-4, Double Sided © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 25 Avalanche Test Procedure VBR(DSS) 1. Turn ON Device Under Test (DUT) Ramp Inductor Current to Desired Id(pk) during ON Time (ton) Id(pk) = Vdd * ton / L Vds (V) Avalanche Test Has Two Regions: Vds “Ringout” Due to Residual Energy in L and L-Coss Resonant Circuit Vdd 0 2. Turn OFF DUT ON Time Adjusted to Obtain Desired Id(pk) and Thus Eav ton Id (A) Drain Voltage “Flys” to VBR(DSS) Avalanche Time (tav) = L * Id(pk) / (VBR(DSS) – Vdd) Avalanche Energy (Eav) = VBR(DSS) * Id(pk) * tav time tav Id(pk) 0 time Ideal Waveforms © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 26 Measured Avalanche Performance MRH25N15U3, 7.5mJ VBR(DSS) = 283V, Id(pk) = 12A, ton = 29.5us MRH25N15U3, 15mJ VBR(DSS) = 304V, Id(pk) = 11A, ton = 71.5us © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 27 Measured Avalanche Performance MRH25N15U3, 300mJ VBR(DSS) = 314V, Id(pk) = 15A, ton = 750us MRH25N15U3, 300mJ (Expanded) VBR(DSS) = 314V, Id(pk) = 15A, ton = 750us © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 28 Measured Avalanche Performance IRHNJ67234, 7.5mJ VBR(DSS) = 300V, Id(pk) = 10A, ton = 24.5us IRHNJ67234, 56mJ VBR(DSS) = 302V, Id(pk) = 16.7A, ton = 120us © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 29 Summary Efficiency Avalanche Capability MRH25N15U3 Demonstrated More Efficient Than IR IRHNJ67234 • By up to 2.75% MGN25N15U3 Efficiency holds up over the full current range of 5A – 20A. Especially at higher load currents Microsemi MRH25N15U3 Demonstrated 2X Repetitive Avalanche Capability Over IR IRHNJ67234 Microsemi MRH25N15U3 Demonstrated 5.4X Single Event Avalanche Capability Over IR IRHNJ67234 IRHNJ67234 Efficiency decreases due to higher conduction Losses • Useful Output Current Range Must Be De-Rated to 18A Increased Losses Mean More Aggressive Thermal Management Required (Bigger Heat Sink for Lower qJA) © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 30 Thank You Microsemi Corporation (MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiationhardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Ethernet solutions; Power-overEthernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,600 employees globally. Learn more at www.microsemi.com. Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 email: [email protected] Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer’s responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided “as is, where is” and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice. ©2015 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are registered trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. © 2015 Microsemi Corporation. Company Proprietary Power Matters.TM 31