AS9100, Revision C Registered ISO 9001:2000 Registered Powered by Sensitron Sensitron Now Offers Radiation Hardened N-Channel Power MOSFETs Sensitron has over 45 years heritage as a leading manufacturer in the high reliability market and over ten years supporting the space market. Positioned as a world leader, Sensitron products are designed, manufactured, tested, and qualified for applications where size, weight, and reliability are critical to mission success. Sensitron is AS9100 Revision C Registered & ISO 9001:2000 Registered. RADIATION HARDENED________________________________________________________ RAD HARD N-CHANNEL POWER MOSFETs Total Ionization Dose (TID) hardened up to 100krad (300krad on request) SEE up to LET 55@90μm (Xe) and LET38@279μm (Xe) NASA tested up to LET85@118μm (Au) TARGET APPLICATIONS (drop-in for existing products)_______________________________ Buck-Boost converters DC/DC or switch mode converters SRADM: RDSON = 130mW Motor control (H-Bridge) PRODUCT SELECTION GUIDE____________________________________________________ Sensitron Part Number SRADM1001SS SRADM1002SS SRADM1003SS SRADM1004SS SRADM1005SS SRADM1006SS SRADM1007SS SRADM1008SS SRADM1009SS Industry Equivalent Max RDsOn IDC Min BVDSS Package Description N/A IRHQ57214SE IRHMS67260 RHNA67260 IRHNJ67234 IRHY7130CM IRHNJ7130 IRHYS67234CM IRHNM57214SE 0.16 0.45 0.03 0.03 0.13 0.13 0.13 0.13 0.40 12.4 4.4 45 45 12.4 12.4 12.4 12.4 4.4 250 250 250 250 250 100 100 250 250 22-Lead Flatpack LCC-28T TO-254 SMD-2 SMD-0.5 TO-257 SMD-0.5 TO-257 LCC-5 3-Phase Bridge Quad Array Single MOSFET Single MOSFET Single MOSFET Single MOSFET Single MOSFET Single MOSFET Single MOSFET PART ORDERING INFORMATION_________________________________________________ PART NUMBER SRADMxxxxSS SRADMxxxxS SCREENING EQUIVALENT JANS JANTXV SCREENING PROCEDURE SS-100 S-100 **The information in this announcement is preliminary. Please contact your factory representative for the latest update. About Sensitron: Sensitron is a leading manufacturer of high reliability power electronic solutions including MIL-PRF-19500 diodes, transient voltage protection components, motor controllers, smart power management and conversion, voltage protection components and RF. Sensitron has over 45 years heritage in serving the complete spectrum of high reliability markets including defense, aerospace, space, and medical. http://www.sensitron.com © 2014 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586-7600 Fax (631) 242-9798 www.sensitron.com [email protected] 162-0314 AS9100, Revision C Registered ISO 9001:2000 Registered Powered by Sensitron Radiation Hardened Power MOSFETsScreening Procedures SS-100 SCREENING PROCEDURE JANS Equivalent (“SS” Part number suffix) is 100% screened in accordance to: SCREEN # TEST / PROCESS MIL-STD-750 METHOD TEST CONDITIONS RAD HARD N-CHANNEL POWER MOSFETs 1a 1b 2 3a Die Visual Internal Visual Not Applicable Temperature Cycling (Thermal Shock) 2073 2069 Power FETs - 1051 3b 3c 4 4066 3161 Power FETs - 11 12 Surge Current Thermal Impedance Constant Acceleration PIND Not Applicable Serialization Electrical Tests High Temperature Reverse Bias (HTRB) Electrical Tests Burn-In No dwell time is required at +25°C. Test condition C, or max TJ , whichever is less, 20 cycles. Condition A or B, as specified. Condition A or B, as specified. As specified. Y1 @ 10,000g or as specified 13 13a 14 Electrical Tests PDA Hermetic Seal - 15 16 Radiography External Visual 2076 2071 5 6-7 8 9 10 1042 Power FETs 1042 Power FETs 1071 Test condition A As specified; Read and record. Test condition A TA = 125C; t = 48 hrs min; VR = 80% of rated VR As specified; Read and record. Test condition A, TA = 25C; t = 240 hrs min; Adjust TA and Io to maintain the junction temperature at +125C minimum As specified; Read and record. 5% Max Fine Leak Gross Leak After complete marking, prior to lot acceptance. S-100 SCREENING PROCEDURE JANTXV Equivalent (“S” Part number suffix) is 100% screened in accordance to: SCREEN # 1 2 3 4 5 6 7 8 9 10 TEST / PROCESS Pre-cap Visual Inspection Temperature Cycling MIL-STD-750 METHOD TEST CONDITIONS 2069 Power FETs JANTXV level 1051 Test condition C or max TJ whichever is less. 20 cycles, t (extremes) ≥10 minutes As specified. Omit for double plug diodes. Test condition G or H. Max leak rate = 5x10 -8 atm-cc/s except 5x10 -7 atm-cc for devices with internal cavity > 0.3cc. Max leak rate 5x10 -6 atm-cc/s for cavities 3-40cc. (May be performed after step 9) Thermal Impedance 3161 Power FETs Hermetic Seal Fine 1071 Leak (Not applicable for double plug diodes & non-cavity products) Gross Leak Hermetic Seal Gross 1071 Leak Interim Elect Per device detail specification. Parameters (Not applicable to case mounted rectifiers). High Temperature 1042 Power FETs Condition B 80% (minimum) of rated VGS. Reverse Bias (HTRB). Not applicable to case mounted rectifiers. Interim Elect Per device detail specification. Parameters Power Burn-in 1042 Power FETs Condition A 160 hours min. Final Electrical Per device detail specification. © 2014 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586-7600 Fax (631) 242-9798 www.sensitron.com [email protected] 162-0314