Sensitron_Rad_Power_MOSFETs

AS9100, Revision C Registered
ISO 9001:2000 Registered
Powered by Sensitron
Sensitron Now Offers Radiation Hardened
N-Channel Power MOSFETs
Sensitron has over 45 years heritage as a leading manufacturer in the high reliability
market and over ten years supporting the space market. Positioned as a world leader,
Sensitron products are designed, manufactured, tested, and qualified for applications
where size, weight, and reliability are critical to mission success. Sensitron is AS9100
Revision C Registered & ISO 9001:2000 Registered.
RADIATION HARDENED________________________________________________________
RAD HARD N-CHANNEL POWER MOSFETs
 Total Ionization Dose (TID) hardened up to 100krad (300krad on request)
 SEE up to LET 55@90μm (Xe) and LET38@279μm (Xe)
 NASA tested up to LET85@118μm (Au)
TARGET APPLICATIONS (drop-in for existing products)_______________________________
 Buck-Boost converters
 DC/DC or switch mode converters
SRADM: RDSON = 130mW
 Motor control (H-Bridge)
PRODUCT SELECTION GUIDE____________________________________________________
Sensitron Part
Number
SRADM1001SS
SRADM1002SS
SRADM1003SS
SRADM1004SS
SRADM1005SS
SRADM1006SS
SRADM1007SS
SRADM1008SS
SRADM1009SS
Industry
Equivalent
Max RDsOn
IDC
Min BVDSS
Package
Description
N/A
IRHQ57214SE
IRHMS67260
RHNA67260
IRHNJ67234
IRHY7130CM
IRHNJ7130
IRHYS67234CM
IRHNM57214SE
0.16
0.45
0.03
0.03
0.13
0.13
0.13
0.13
0.40
12.4
4.4
45
45
12.4
12.4
12.4
12.4
4.4
250
250
250
250
250
100
100
250
250
22-Lead Flatpack
LCC-28T
TO-254
SMD-2
SMD-0.5
TO-257
SMD-0.5
TO-257
LCC-5
3-Phase Bridge
Quad Array
Single MOSFET
Single MOSFET
Single MOSFET
Single MOSFET
Single MOSFET
Single MOSFET
Single MOSFET
PART ORDERING INFORMATION_________________________________________________
PART NUMBER
SRADMxxxxSS
SRADMxxxxS
SCREENING EQUIVALENT
JANS
JANTXV
SCREENING PROCEDURE
SS-100
S-100
**The information in this announcement is preliminary. Please contact your factory representative for the latest update.
About Sensitron:
Sensitron is a leading manufacturer of high reliability power electronic solutions including MIL-PRF-19500 diodes, transient
voltage protection components, motor controllers, smart power management and conversion, voltage protection components
and RF. Sensitron has over 45 years heritage in serving the complete spectrum of high reliability markets including defense,
aerospace, space, and medical. http://www.sensitron.com
© 2014 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681
Phone (631) 586-7600  Fax (631) 242-9798  www.sensitron.com  [email protected]
162-0314
AS9100, Revision C Registered
ISO 9001:2000 Registered
Powered by Sensitron
Radiation Hardened Power MOSFETsScreening Procedures
SS-100 SCREENING PROCEDURE
JANS Equivalent (“SS” Part number suffix) is 100% screened in accordance to:
SCREEN #
TEST / PROCESS
MIL-STD-750 METHOD
TEST CONDITIONS
RAD HARD N-CHANNEL POWER MOSFETs
1a
1b
2
3a
Die Visual
Internal Visual
Not Applicable
Temperature Cycling
(Thermal Shock)
2073
2069 Power FETs
-
1051
3b
3c
4
4066
3161 Power FETs
-
11
12
Surge Current
Thermal Impedance
Constant
Acceleration
PIND
Not Applicable
Serialization
Electrical Tests
High Temperature
Reverse Bias (HTRB)
Electrical Tests
Burn-In
No dwell time is required at +25°C. Test condition C, or max
TJ , whichever is less, 20 cycles. Condition A or B, as
specified.
Condition A or B, as specified.
As specified.
Y1 @ 10,000g or as specified
13
13a
14
Electrical Tests
PDA
Hermetic Seal
-
15
16
Radiography
External Visual
2076
2071
5
6-7
8
9
10
1042 Power FETs
1042 Power FETs
1071
Test condition A
As specified; Read and record.
Test condition A
TA = 125C; t = 48 hrs min; VR = 80% of rated VR
As specified; Read and record.
Test condition A, TA = 25C; t = 240 hrs min; Adjust TA and Io
to maintain the junction temperature at +125C minimum
As specified; Read and record.
5% Max
Fine Leak
Gross Leak
After complete marking, prior to lot acceptance.
S-100 SCREENING PROCEDURE
JANTXV Equivalent (“S” Part number suffix) is 100% screened in accordance to:
SCREEN #
1
2
3
4
5
6
7
8
9
10
TEST / PROCESS
Pre-cap Visual
Inspection
Temperature Cycling
MIL-STD-750 METHOD
TEST CONDITIONS
2069 Power FETs
JANTXV level
1051
Test condition C or max TJ whichever is less. 20 cycles, t
(extremes) ≥10 minutes
As specified.
Omit for double plug diodes. Test condition G or H. Max leak
rate = 5x10 -8 atm-cc/s except 5x10 -7 atm-cc for devices
with internal cavity > 0.3cc. Max leak rate 5x10 -6 atm-cc/s
for cavities 3-40cc. (May be performed after step 9)
Thermal Impedance
3161 Power FETs
Hermetic Seal Fine
1071
Leak (Not applicable
for double plug
diodes & non-cavity
products)
Gross Leak
Hermetic Seal Gross
1071
Leak
Interim Elect
Per device detail specification.
Parameters (Not
applicable to case
mounted rectifiers).
High Temperature
1042 Power FETs
Condition B 80% (minimum) of rated VGS.
Reverse Bias (HTRB).
Not applicable to case
mounted rectifiers.
Interim Elect
Per device detail specification.
Parameters
Power Burn-in
1042 Power FETs
Condition A 160 hours min.
Final Electrical
Per device detail specification.
© 2014 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681
Phone (631) 586-7600  Fax (631) 242-9798  www.sensitron.com  [email protected]
162-0314